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BAS16TT1G

更新时间：2024-09-18 05:35:05
品牌：ONSEMI
描述：Silicon Switching Diode

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BAS16TT1G 概述

Silicon Switching Diode 硅开关二极管 小信号二极管 整流二极管

BAS16TT1G 规格参数

是否无铅：不含铅生命周期：Active
零件包装代码：SC-75包装说明：HALOGEN FREE AND ROHS COMPLIANT, CASE 463-01, SC-75, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.70
Factory Lead Time：1 week风险等级：0.5
Is Samacsys：N配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.25 VJESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值正向电流：0.5 A元件数量：1
端子数量：3最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：0.2 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
最大功率耗散：0.225 W认证状态：Not Qualified
最大重复峰值反向电压：75 V最大反向恢复时间：0.006 µs
子类别：Rectifier Diodes表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

BAS16TT1G 数据手册

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BAS16TT1  
Preferred Device  
Silicon Switching Diode  
Features  
• Pb−Free Package is Available*  
http://onsemi.com  
MAXIMUM RATINGS (T = 25°C)  
A
3
1
Rating  
Symbol  
Max  
75  
Unit  
V
CATHODE  
ANODE  
Continuous Reverse Voltage  
Recurrent Peak Forward Current  
V
R
I
F
200  
500  
mA  
mA  
Peak Forward Surge Current  
I
FM(surge)  
Pulse Width = 10 ms  
THERMAL CHARACTERISTICS  
Characteristic  
3
CASE 463  
SOT−416  
STYLE 2  
Symbol  
Max  
Unit  
2
Total Device Dissipation,  
FR−4 Board (Note 1)  
P
D
1
225  
mW  
T = 25°C  
A
Derated above 25°C  
1.8  
mW/°C  
°C/W  
Thermal Resistance,  
R
555  
q
JA  
MARKING DIAGRAM  
Junction−to−Ambient (Note 1)  
Total Device Dissipation,  
FR−4 Board (Note 2)  
T = 25°C  
A
P
D
360  
mW  
A6  
Derated above 25°C  
2.9  
mW/°C  
°C/W  
Thermal Resistance,  
R
345  
q
JA  
Junction−to−Ambient (Note 2)  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
ORDERING INFORMATION  
1. FR−4 @ Minimum Pad  
†
2. FR−4 @ 1.0 × 1.0 Inch Pad  
Device  
Package  
Shipping  
BAS16TT1  
SOT−416  
3000 / Tape & Reel  
3000 / Tape & Reel  
BAS16TT1G  
SOT−416  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
May, 2004 − Rev. 2  
BAS16TT1/D  
 
BAS16TT1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
Forward Voltage  
V
F
mV  
(I = 1.0 mA)  
−
−
−
−
715  
866  
1000  
1250  
F
(I = 10 mA)  
F
(I = 50 mA)  
F
(I = 150 mA)  
F
Reverse Current  
I
R
mA  
(V = 75 V)  
−
−
−
1.0  
50  
30  
R
(V = 75 V, T = 150°C)  
R
J
(V = 25 V, T = 150°C)  
R
J
Capacitance  
(V = 0, f = 1.0 MHz)  
R
C
−
−
−
−
2.0  
6.0  
45  
pF  
ns  
PC  
V
D
Reverse Recovery Time  
t
rr  
(I = I = 10 mA, R = 50 W) (Figure 1)  
F
R
L
Stored Charge  
(I = 10 mA to V = 6.0 V, R = 500 W) (Figure 2)  
QS  
F
R
L
Forward Recovery Voltage  
(I = 10 mA, t = 20 ns) (Figure 3)  
V
FR  
1.75  
F
r
http://onsemi.com  
2
BAS16TT1  
1 ns MAX  
DUT  
500 W  
t
t
rr  
10%  
t
if  
50 W  
DUTY CYCLE = 2%  
90%  
V
F
I
rr  
100 ns  
Figure 1. Reverse Recovery Time Equivalent Test Circuit  
OSCILLOSCOPE  
R . 10 MW  
C 3 7 pF  
DUT  
BAW62  
243 pF  
V
C
500 W  
V
CM  
20 ns MAX  
D1  
100 KW  
t
10%  
Qa  
C
V
CM  
+
DUTY CYCLE = 2%  
t
90%  
V
f
400 ns  
Figure 2. Stored Charge Equivalent Test Circuit  
V
120 ns  
1 KW  
450 W  
V
90%  
DUT  
50 W  
V
fr  
t
10%  
DUTY CYCLE = 2%  
2 ns MAX  
Figure 3. Forward Recovery Voltage Equivalent Test Circuit  
http://onsemi.com  
3
BAS16TT1  
10  
100  
10  
T = 150°C  
A
T = 125°C  
A
1.0  
T = 85°C  
A
T = 85°C  
A
0.1  
0.01  
T = 25°C  
A
T = 55°C  
1.0  
0.1  
A
T = −ꢀ40°C  
A
T = 25°C  
A
0.001  
50  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
10  
20  
30  
40  
V , FORWARD VOLTAGE (VOLTS)  
F
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 4. Forward Voltage  
Figure 5. Leakage Current  
0.68  
0.64  
0.60  
0.56  
0.52  
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 6. Capacitance  
1.0  
0.1  
D = 0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.01  
SINGLE PULSE  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
t, TIME (s)  
1.0  
10  
100  
1000  
Figure 7. Normalized Thermal Response  
http://onsemi.com  
4
BAS16TT1  
PACKAGE DIMENSIONS  
SC−416/SC−90/SOT−75  
CASE 463−01  
ISSUE C  
NOTES:  
−A−  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
S
2. CONTROLLING DIMENSION: MILLIMETER.  
2
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
3
G
−B−  
A
B
C
D
G
H
J
0.70  
1.40  
0.60  
0.15  
0.90 0.028 0.035  
1.80 0.055 0.071  
0.90 0.024 0.035  
0.30 0.006 0.012  
1
D 3 PL  
0.20 (0.008)  
M
B
1.00 BSC  
0.039 BSC  
−−− 0.004  
0.20 (0.008) A  
K
−−−  
0.10  
1.45  
0.10  
0.10  
0.25 0.004 0.010  
1.75 0.057 0.069  
0.20 0.004 0.008  
K
L
S
0.50 BSC  
0.020 BSC  
J
STYLE 2:  
PIN 1. ANODE  
2. N/C  
C
3. CATHODE  
L
H
http://onsemi.com  
5
BAS16TT1  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
BAS16TT1/D  

BAS16TT1G CAD模型

  • 引脚图

  • 封装焊盘图

    • BAS16TT1G 替代型号

    型号 制造商 描述 替代类型 文档
    BAS16TT1 ONSEMI Silicon Switching Diode 类似代替
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    BAS16LT1G ONSEMI Switching Diode 功能相似

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