BAL99LT1 [ONSEMI]
Switching Diode; 开关二极管型号: | BAL99LT1 |
厂家: | ONSEMI |
描述: | Switching Diode |
文件: | 总4页 (文件大小:45K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAL99LT1
Switching Diode
Features
• Pb−Free Package is Available
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ANODE
CATHODE
MAXIMUM RATINGS
3
2
Rating
Symbol
Value
70
Unit
Vdc
Continuous Reverse Voltage
Peak Forward Current
V
R
I
F
100
mAdc
3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
SOT−23
CASE 318
STYLE 18
1
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MARKING DIAGRAM
Total Device Dissipation FR−5 Board
P
D
225
mW
(Note 1), T = 25°C
A
Derate above 25°C
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
JF M
R
556
300
°C/W
q
JA
Total Device Dissipation Alumina
P
mW
D
Substrate, (Note 2) T = 25°C
A
Derate above 25°C
2.4
mW/°C
JF
M
Specific Device Code
= Date Code
Thermal Resistance,
Junction−to−Ambient
R
417
°C/W
°C
q
JA
Junction and Storage Temperature
T , T
J
−55 to +150
stg
ORDERING INFORMATION
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
†
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in 99.5% alumina.
Device
Package
Shipping
BAL99LT1
SOT−23
3000 / Tape & Reel
3000 / Tape & Reel
BAL99LT1G
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
July, 2004 − Rev. 3
BAL99LT1/D
BAL99LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Reverse Voltage Leakage Current
I
R
mAdc
(V = 70 Vdc)
−
−
−
2.5
30
50
R
(V = 25 Vdc, T = 150°C)
R
J
(V = 70 Vdc, T = 150°C)
R
J
Reverse Breakdown Voltage, (I = 100 mAdc)
V
70
−
Vdc
mV
R
(BR)
Forward Voltage,
V
F
(I = 1.0 mAdc)
−
−
−
−
715
855
1000
1250
F
(I = 10 mAdc)
F
(I = 50 mAdc)
F
(I = 150 mAdc)
F
Recovery Current, (I = 10 mAdc, V = 5.0 Vdc, R = 500 W)
Q
−
−
−
45
1.5
6.0
pC
pF
ns
F
R
L
S
Diode Capacitance, (V = 0, f = 1.0 MHz)
C
R
D
Reverse Recovery Time,
t
rr
(I = I = 10 mAdc, R = 100 W, measured at I = 1.0 mAdc)
F
R
L
R
Forward Recovery Voltage, (I = 10 mAdc, t = 20 ns)
V
FR
−
1.75
Vdc
F
r
TYPICAL CHARACTERISTICS
100
10
10
T = 150°C
A
T = 125°C
A
1.0
0.1
T = 85°C
A
T = 85°C
A
T = 25°C
A
1.0
0.1
T = 55°C
A
0.01
T = −ꢂ40°C
A
T = 25°C
A
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Forward Voltage
Figure 2. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Capacitance
http://onsemi.com
2
BAL99LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
NOTES:
A
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW
STANDARD 318−08.
3
S
C
B
1
2
V
G
INCHES
DIM MIN MAX
MILLIMETERS
MIN
2.80
1.20
0.89
0.37
1.78
MAX
3.04
1.40
1.11
0.50
2.04
A
B
C
D
G
H
J
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
H
J
D
K
0.0005 0.0040 0.013 0.100
0.0034 0.0070 0.085 0.177
K
L
S
V
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
0.35
0.89
2.10
0.45
0.69
1.02
2.64
0.60
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
3
BAL99LT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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USA/Canada
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Order Literature: http://www.onsemi.com/litorder
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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
BAL99LT1/D
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