BAL99LT1/D [ETC]
Switching Diode ; 开关二极管\n
| 型号： | BAL99LT1/D |
| 厂家： | 
ETC |
| 描述： | Switching Diode
|
| 文件： | 总4页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
Switching Diode
BAL99LT1
MAXIMUM RATINGS
Rating
Symbol
Value
70
Unit
Vdc
Continuous Reverse Voltage
Peak Forward Current
THERMAL CHARACTERISTICS
Characteristic
V
R
3
I
F
100
mAdc
1
2
Symbol
Max
Unit
(1)
Total Device Dissipation FR–5 Board
P
D
225
mW
CASE 318–08, STYLE 18
SOT–23 (TO–236AB)
T = 25°C
Derate above 25°C
A
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
R
q
JA
Total Device Dissipation
Alumina Substrate, T = 25°C
P
D
(2)
A
Derate above 25°C
2.4
417
mW/°C
°C/W
°C
ANODE
3
CATHODE
2
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
q
JA
T , T
–55 to +150
J
stg
BAL99LT1 = JF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Reverse Voltage Leakage Current
I
R
µAdc
(V = 70 Vdc)
—
—
—
2.5
30
50
R
(V = 25 Vdc, T = 150°C)
R
J
(V = 70 Vdc, T = 150°C)
R
J
Reverse Breakdown Voltage
(I = 100 µAdc)
R
V
70
—
Vdc
mV
(BR)
Forward Voltage
V
F
(I = 1.0 mAdc)
—
—
—
—
715
855
1000
1250
F
(I = 10 mAdc)
F
(I = 50 mAdc)
F
(I = 150 mAdc)
F
Recovery Current
(I = 10 mAdc, V = 5.0 Vdc, R = 500 Ω)
F
Q
—
—
—
—
45
pC
pF
S
R
L
Diode Capacitance
(V = 0, f = 1.0 MHz)
R
C
1.5
D
Reverse Recovery Time
t
rr
6.0
ns
(I = I = 10 mAdc, R = 100 Ω, measured at I = 1.0 mAdc)
F
R
L
R
Forward Recovery Voltage
(I = 10 mAdc, t = 20 ns)
V
FR
1.75
Vdc
F
r
1. FR–5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2001 – Rev. 1
BAL99LT1/D
BAL99LT1
TYPICAL CHARACTERISTICS
100
10
10
T = 150°C
A
T = 125°C
A
1.0
0.1
T = 85°C
A
T = 85°C
A
T = 25°C
A
1.0
0.1
T = 55°C
A
0.01
T = -ā40°C
A
T = 25°C
A
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Forward Voltage
Figure 2. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Capacitance
http://onsemi.com
2
BAL99LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
determined by T , the maximum rated junction
J(max)
temperature of the die, R , the thermal resistance from the
θJA
device junction to ambient, and the operating temperature,
T . Using the values provided on the data sheet for the
A
SOT–23 package, P can be calculated as follows:
• Always preheat the device.
D
• The delta temperature between the preheat and
soldering should be 100°C or less.*
T
J(max) – TA
Rθ
PD
=
JA
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
calculate the power dissipation of the device which in this
case is 225 milliwatts.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
150°C – 25°C
556°C/W
PD
=
= 225 milliwatts
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
The 556°C/W for the SOT–23 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts.
There are other alternatives to achieving higher power
dissipation from the SOT–23 package. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad . Using a board material such
as Thermal Clad, an aluminum core board, the power
dissipation can be doubled using the same footprint.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
http://onsemi.com
3
BAL99LT1
PACKAGE DIMENSIONS
SOT–23 (TO–236AB)
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
INCHES
DIM MIN MAX
MILLIMETERS
S
C
B
MIN
2.80
1.20
0.89
0.37
1.78
MAX
3.04
1.40
1.11
1
2
A
B
C
D
G
H
J
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
V
G
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
0.0005 0.0040 0.013
0.0034 0.0070 0.085
K
L
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
0.35
0.89
2.10
0.45
S
V
H
J
D
K
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
.Thermal Clad is a trademark of the Bergquist Company
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
CENTRAL/SOUTH AMERICA:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–spanish@hibbertco.com
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
001–800–4422–3781
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: ONlit–german@hibbertco.com
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: ONlit–french@hibbertco.com
Email: ONlit–asia@hibbertco.com
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: ONlit@hibbertco.com
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
For additional information, please contact your local
Sales Representative.
*Available from Germany, France, Italy, UK, Ireland
BAL99LT1/D
相关型号：
©2020 ICPDF网 联系我们和版权申明