BAL99W [COMCHIP]
Surface Mount Switching Diode; 表面贴装开关二极管
| 型号： | BAL99W |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Surface Mount Switching Diode |
| 文件： | 总2页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Surface Mount Switching Diode
COMCHIP
www.comchip.com.tw
Voltage: 70 Volts
Current: 215mA
BAV99W Thru BAW56W
Features
Fast Switching Speed
Surface Mount PackageIdeally Suited
for Automatic Insertio
For General PurposeSwitching Applications
High Conductance
SOT-323
.087 (2.2)
.070 (1.8)
Mechanical data
Case: SOT - 323, Plastic
Approx. Weight: 0.008 gram
.016 (.40)
Top View
3
This diodes isalso available inother
configurations including adual common
cathode with typedesignation BAV70W,a dual
common anodes withtype designation
BAW56 and single chip inside withtype
Designation BAL99W
1
2
BAV99W
BAL99W
.056(1.4)
.047(1.2)
ANODE
CATHODE
1
1
2
3
3
ANODE
ANODE
2
CATHODE
CATHODE
CATHODE
ANODE
.087 (2.2)
.078(2. 0)
CATHODE
ANODE
1
1
.016 (.40) .016 (.40) max.
3
3
CATHODE
ANODE
2
2
Dimensions in inches (millimeters)
ANODE
CATHODE
BAV70W
Maximum Ratings
BAW56W
Rating
Symbol
VR
Value
70
215
500
Units
VDC
mAdc
mAdc
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
IF
IFM(surge)
Thermal Characteristics
Characteristic
Symbol
Max
225
1.8
556
300
Units
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Total Device Dissipation FR– 5 Board(1)
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
TA = 25°C
PD
RșJA
PD
2.4
417
–55 to +150
RșJA
TJ, Tst
g
Electrical Characterics (TA = 25°C unless otherwise noted)
Characteristic (OFF CHARACTERISTICS)
Symbol
V(BR)
Max
-
Units
Vdc
Min
70
Reverse Breakdown Voltage ( I(BR) = 100 uAdc )
Reverse Voltage Leakage Current
V
R = 25 Vdc, TJ = 150°C
VR = 70 Vdc
R = 70 Vdc, TJ = 150°C
Diode Capacitance (VR = 0, f = 1.0 MHz))
Forward Voltage F = 1.0 mAdc
F = 10 mAdc
I F = 50 mAdc
F = 150 mAdc
30
2.5
50
1.5
715
855
1000
1250
-
-
-
IR
uAdc
pF
V
CD
I
I
-
-
-
-
VF
Trr
mV
nS
I
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0mAdc) RL = 100ȍ
6.0
1.FR–5 = 1.0 X 0.75X 0.062 in. 2.Aluminum = 0.4X 0.3X 0.024 in. 99.5% aluminum.
Page 1
MDS0302003A
Surface Mount Switching Diode
COMCHIP
www.comchip.com.tw
RATINGAND CHARACTERISTIC CURVES (BAV99W Thru BAW56W)
820
Ω
I
F
+10 V
t
t
t
2.0 k
r
p
0.1 µF
I
F
t
t
100
F
µ
H
rr
10%
90%
0.1
µ
DUT
I
= 1.0 mA
R(REC)
50
Ω
Pulse
Output
50
Sampling
Oscilloscopes
Ω Input
I
R
V
R
Output Pulse
(I = I = 10 mA; Measured
Generator
Input Signal
F
R
at I
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
10
100
T
A = 150°C
T
= 85°C
T
A
A = 125°C
1.0
10
1.0
0.1
T
= –40°C
A
T
= 85°C
A
0.1
0.01
T
= 55
°C
A
T
= 25°C
A
T
= 25
°C
A
0.001
50
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
, Reverse Voltage (V)
R
30
40
V , Forward Voltage (V)
V
F
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2
4
6
8
V
, Reverse Voltage (V)
R
Figure 4. Capacitance
Page 2
MDS0302003A
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