AND8116 [ONSEMI]
Integrated Relay/Inductive Load Drivers for Industrial and Automotive Applications; 用于工业和汽车应用的集成继电器/电感负载驱动器
| 型号： | AND8116 |
| 厂家： | 
ONSEMI |
| 描述： | Integrated Relay/Inductive Load Drivers for Industrial and Automotive Applications |
| 文件： | 总8页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AND8116/D
Integrated Relay/Inductive
Load Drivers for Industrial
and Automotive
Applications
http://onsemi.com
APPLICATION NOTE
Prepared by: Alejandro Lara
ON Semiconductor
Industrial and Automotive Application Requirements
The device requirements for industrial and automotive
applications are different and must be addressed in different
manner. While the requirements for automotive applications
are the most difficult to comply with, industrial
requirements traditionally allow more latitudes. Relay coil
currents vary considerably depending on the applications.
The largest class of industrial and automotive relays have
coils with current consumption between 50 and 150 mA.
Selection of a suitable relay driver requires many
constraints to be evaluated. For automotive applications, it
is necessary to put special attention in the following
requirements:
Abstract
Most PC board mounted relays are driven by
microprocessors or other sensitive electronic devices. A
successful coil drive circuit requires isolation between the
relay and the microprocessor circuitry. Effective drive
circuits must account for drive current and voltage
requirements as well as effective suppression of L di/dt
transients which can destroy microprocessor circuits. While
it is easy to over−design an effective drive circuit, today’s
designs must be cost competitive. Integrating a monolithic
IC driver device into the relay will provide significant value
to the system designer.
This
paper
describes
the
operation
of
ON Semiconductor’s integrated relay driver products to
interface sensitive electronic devices with mechanical
relays to accomplish different control/power functions.
Important benefits such as PC board space savings and
components count reduction are also explained.
• Load dump (80 V, 300 msec)
• Dual voltage jump start (24 V or more)
• Reverse battery (−14 V, 1minute or more)
• ESD immunity (according AEC−Q100 specification)
• Operating ambient temperature (−40°C to 85°C)
Introduction
Meeting these automotive requirements usually results in
specifying an oversized and non−cost effective relay driver,
or one requiring many protection components.
Industrial applications on the other hand do not have many
requirements different than the standard ones such as ESD
immunity (usually 2.0 kV HBM), and a given range of
operating ambient temperature (usually between 0°C to
85°C). However, some applications also call for protection
devices against transient voltage conditions, which creates
the need for extra protection components too.
Although the advances in the electronics industry are
increasing day by day, mechanical relays are still
extensively used in industrial and automotive applications to
control high current loads. Their low cost and excellent fault
tolerance make relays to be an useful and reliable solution
in industrial and automotive applications environments. The
integrated relay driver devices NUD3105, NUD3112 and
NUD3124 offered by ON Semiconductor are considered to
be the ideal device solution to control mechanical relays
used in industrial and automotive applications. Their
integrated design allows significant simplification and cost
reductions when replacing traditional discrete solutions
such as bipolar transistors plus free−wheeling diodes.
Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
September, 2003 − Rev. 1
AND8116/D
AND8116/D
Standard Discrete RELAY DRIVERS
ON Semiconductor’s RELAY DRIVERS
The ON Semiconductor’s relay drivers portfolio is
divided in two main categories:
• Industrial version (devices NUD3105, NUD3112)
• Automotive version (device NUD3124)
For both type of applications industrial and automotive,
the most traditional and popular relay drivers are the ones
formed discretely with a bipolar transistor, two bias resistors
and a free−wheeling diode. In some cases, it is required to
add extra components such as MOVs (metal oxide varistors)
and extra diodes to ensure proper protection. Figure 1 shows
a typical discrete relay driver with the extra protection
devices. Diode D1 provides reverse supply protection and
diode D2 provides a clamp function to suppress the voltage
spike generated by the relay’s coil during the turn−off
interactions (V = Ldi/dt). A power MOV device is used to
limit positive transients to within the bipolar transistor’s
breakdown voltage. The saturation voltage of the bipolar
transistor (typically over 1.0 V) causes high power
dissipation which in some cases eliminates the option to use
inexpensive surface mount package devices such as
SOT−23 or smaller, therefore the need for bigger packages
such as TO220 is always present. The resulting discrete
circuit is expensive because it takes several components and
a big space in the PC board.
Industrial Version
Figure 2 describes the industrial relay driver version
(devices NUD3105, NUD3112). This device integrates
several discrete components in a single SOT−23 three
leaded surface mount package to achieve a simpler and more
efficient solution than the conventional discrete relay
drivers. The characteristics of the integrated devices are
listed below:
• N−channel FET 40 V, 500 mA
• ESD protection Zener diodes (7.0 V)
• Bias resistors (1.0 K Win the gate and 300 K
W
between gate and source)
• Clamping protection Zener diodes (7.0 V for 5.0 V
relay’s coils, and 14 V for 12 V coils)
Drain (3)
+12 V
D1
Clamp Zener
7 V or 14 V
Gate (1)
1.0 k
Clamp Zener
7 V or 14 V
ESD
Zener
7 V
RELAY
D2
+5 V/3.3 V
300 k
ESD
Zener
7 V
R1
VARISTOR
Q1
LOGIC
R2
Source (2)
Figure 2. Industrial Relay Driver Description
(NUD3105 and NUD3112 Devices)
0
Figure 1. Typical Discrete Relay Driver
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AND8116/D
The 40 V N−channel FET is designed to switch the relay’s
against ESD conditions possibly induced by persons during
the handling or assembly of the device. And the bias resistor
provides the drive control signals to the FET.
Figure 3 illustrates the typical connection diagram of the
NUD3105 / NUD3112 devices:
coil for currents up to 500 mA. The clamping protection
Zener diodes (14 V) provides a clamp function to suppress
the voltage spike generated by the relay’s coil during the
turn−off interactions (V = Ldi/dt). The ESD protection
Zener diodes protects the gate−source silicon junction
+12 V/5.0 V
RELAY
NUD3105, NUD3112
+5 V/3.3 V
Clamp Zener
7 V or 14 V
1.0 k
LOGIC
Clamp Zener
7 V or 14 V
ESD
Zener
14 V
300 k
ESD
Zener
14 V
0
Figure 3. Typical Connection Diagram
(NUD3105 5.0 V Relay’s Coils and NUD3112 for 12 V)
When positive logic voltage is applied to the gate of the
device (5.0 V/3.3 V), the FET is turned−on which activates
the relay. When the FET is turned−off, the relay’s coil is
deactivated which causes it to kickback and generates a high
voltage spike, this voltage spike is suppressed by the clamp
Zener diodes placed across the FET. This operation
sequence is repeated for all the on and off operations of the
relay driver. Figure 4 shows the voltage and current
waveforms generated across the NUD3112 relay driver
when it is controlling an OMRON relay (G8TB−1A−64).
This relay has the following coil characteristics: L = 46 mH,
Rdc = 100 W. The current that the relay takes for 12 V of
supply voltage is 120 mA. The integrated FET has a typical
on−resistance of 1.0 ,Wtherefore the power dissipation
V
– 10 V/div
SUPPLY
V
GS
– 10 V/div
Inductor
kick back
V
– 10 V/div
DS
I
D
– 50 mA/div
2
generated in the FET is around 15 mW (P = I R) at 25°C of
ambient temperature. It results in an on−voltage drop of only
125 mV at 120 mA of current.
Figure 4. Traces Generated Across NUD3112 Device
when Driving OMRON Relay G8TB−1A−64
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AND8116/D
Based on the relay coil specifications, the energy that is
The 40 V N−channel FET is designed to switch on and off
the relay’s coil for currents up to 200 mA. The clamping
protection Zener diodes (28 V) provides an active clamp
function to drain to ground the voltage spikes generated by
the relay’s coils during the turn−off interactions (V = Ldi/dt).
This function is achieved by partially activating the FET
through the clamp Zener diodes anytime the voltage across
them reaches their breakdown voltage level (28 V). The
ESD protection Zener diodes protects the gate−source
silicon junction against ESD conditions possibly induced by
persons during the handling or assembly of the device. And
the bias resistor provides the drive control signals to the FET.
Figure 6 illustrates the typical connection diagram of the
NUD3124 device.
transferred to the driver by the relay’s coils can be
theoretically calculated by using the formula E = ½ L I2,
which results in 0.331 mJ. The avalanche energy capability
of the NUD3105 and NUD3112 devices is 50 mJ, so the
0.331 mJ transferred by the OMRON relay only represents
a 0.65% of their energy capability. The same theoretical
principle (E = ½ L I2) can be used to find out the type of
relay’s coils that the NUD3105 and NUD3112 devices can
drive. For these purposes, one needs to know the inductance
and current characteristics of the relay’s coil to calculate the
energy that will be transferred. The resulting energy should
not exceed the 50 mJ at which the devices are rated.
Automotive Version
Figure 5 describes the automotive relay driver version
(device NUD3124).
+12 V (Car’s Battery)
This device also integrates several discrete components in
a single SOT−23 three leaded surface mount package to
achieve a simpler and even more robust solution than the
conventional discrete relay drivers. The characteristics of
the integrated devices are listed below:
RELAY
NUD3124
Clamp Zener
28 V
• N−channel FET 40 V, 150 mA
• ESD protection Zener diodes (14 V)
• Bias resistors (10 kW in the gate and 100 kW between
gate and source)
Gate (1)
Clamp Zener
28 V
10 k
• Clamping protection Zener diodes (28 V) to perform as
an active clamp function.
LOGIC
ESD
Zener
14 V
ESD
Zener
14 V
Drain (3)
100 k
ESD
Zener
14 V
ESD
Zener
14 V
Clamp Zener
28 V
Clamp Zener
28 V
Source (2)
Gate (1)
10 k
Figure 6. Typical Connection Diagram for
Automotive Relay Driver (NUD3124 Device)
ESD
Zener
14 V
ESD
Zener
14 V
When positive logic voltage is applied to the gate of the
device (5.0 V/3.3 V), the FET is turned−on which activates
the relay. When the FET is turned−off, the relay’s coil is
deactivated which causes it to kickback and generates a high
voltage spike. This voltage spike causes the clamp Zener
diodes (28 V) to breakdown which partially activates the
FET to drain this condition to ground. This operation
sequence is repeated for all the on and off operations of the
relay driver.
100 k
ESD
Zener
14 V
ESD
Zener
14 V
Source (2)
Figure 5. Automotive Relay Driver Description
(NUD3124 Device)
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AND8116/D
Figure 7 shows the voltage and current waveforms
activating the FET anytime transient voltage conditions
exceed the breakdown voltage of the clamp Zener diodes
(28 V). The energy capability of the NUD3124 device is
350 mJ typically. Figure 8 shows an oscilloscope picture of
a surge test applied to the device when it was characterized
to find its maximum reverse avalanche energy capability.
The high reverse avalanche energy capability of this
device (350 mJ) allows to control most of the relays used in
automotive applications since they usually have coils
between 50 mA and 150 mA with inductance values lower
than 1 Henry. These type of coils do not transfer high levels
generated across the NUD3124 relay driver when it is
controlling an OMRON relay (G8TB−1A−64). This relay
has the following coil characteristics: L = 46 mH, Rdc =
100ꢀ W. The current that the OMRON relay takes for 12 V of
supply voltage is 120 mA. The integrated FET has a typical
on−resistance of 1.0 ,Wtherefore the power dissipation
2
generated in the FET is around 15 mW (P=I R) at 25°C of
ambient temperature. It results in an on−voltage drop of only
125 mV at 120 mA of current.
2)
of energy to the NUD3124 device (E = ½ L I , and therefore
each of them can be controlled with the same device
(NUD3124). Big advantages are obtained when a common
relay driver product is used to control the majority of the
relays used in a particular application circuit. PC board
space is saved and the circuit design is optimized. In
addition, components count purchasing operations are also
simplified.
V
– 10 V/div
SUPPLY
V
GS
– 10 V/div
Inductor
kick back
V
– 10 V/div
DS
The active clamp characteristic of the NUD3124 device
also allows it to comply with automotive requirements of
load dump and other voltage transients required by the
automotive specifications. Load dump transients are
generated by the vehicle’s alternator when the battery
connection fails during heavy charging. These type of
transients could occur when the relay is on or off. Although
automotive requirements for load dump vary between
suppliers, it has been learned that most of the load dump
requirements can be covered by devices which can sustain
a load dump transient of 60 V with 350 msec of duration.
Figure 9 shows a load dump transient of 60 V and 350 msec
of duration.
I
– 50 mA/div
D
Figure 7. Waveforms Generated Across the
NUD3124 when Driving OMRON Relay
G8TB−1A−64
Unlike the NUD3105 and NUD3112 devices (industrial
version), the unique design of the NUD3124 device
(automotive version) provides the active clamp feature that
allows higher reverse avalanche energy capability by
Conversion Factors:
Ch2 – Max * 100
Ch3 – Max * 10
M1 – Area * 1000
V
– 10 V/div
GS
I
– 100 mA/div
= Ch2 x Ch3
D
P
= 351 mJ
pk
Figure 8. Waveforms Generated Across the
NUD3124 Device During Surge Test
Figure 9. Load Dump Transient Waveform
(60 V, 350 msec).
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AND8116/D
The 73 V waveform shown in the oscilloscope picture
RELAY MODULE
(Figure 9) resulted from the 60 V load dump transient plus
the vehicle’s battery voltage (13 V). In the application field,
the relay driver (NUD3124) is always connected to relays,
therefore if a load dump condition occurs, the current is
limited by the relay’s coil resistance which reduces the
amount of energy that the relay driver (NUD3124) needs to
drain to ground. Figure 10 shows an oscilloscope picture
with the waveforms generated across the NUD3124 device
when it is subjected to a load dump transient. For this case,
the device is controlling an OMRON relay (G8TB−1A−64)
The most stressful and aggressive requirement for
automotive transients is load dump. Therefore if a device is
able to comply with this requirement, it is assured that it will
sustain all the other less aggressive transients such as 240 V
(10 Wsource impedance), 350 smtime−duration type.
In addition to complying with the load dump transient
requirements and all the other smaller automotive transients,
the NUD3124 device also complies with other automotive
requirements such as reverse battery (−14 V, 1 minute or
more) and dual voltage jump start (24 V "10%).
The benefits of the ON Semiconductor’s relay driver
devices (NUD3105, NUD3112 and NUD3124) are even
more unique and useful if they are integrated inside the relay
body to create relay modules that can be driven directly from
the logic circuitry. The advantages are:
• No need for external driver device
• PC board space reduction
• Reduction for insertion operations.
• Optimized design for lower cost
All the previous advantages will result in costs reduction
for industrial and automotive applications which have the
need for mechanical relays. Figure 10 describes graphically
the design of the relay module. Some relay manufacturers
already integrate a diode connected in parallel with the
relay’s coil to simplify the driver circuitry. Others are
considering to develop the concept of the relay module. The
major goal of the relay’s manufacturers is to offer more
added value to their customers for design optimization and
cost reduction.
If a reverse battery condition occurs, it will cause the body
diode of the FET to be forward biased and hence conduct.
During this condition, the current will be limited by the
relay’s coil resistance to a safe level causing the relay be
energized. With the traditional discrete approach, damage
can occur to the control logic circuitry due to a possible
current path from a reverse connected battery through the
driver to the logic’s output. This possibility is eliminated
when the NUD3124 device is used.
If a dual voltage jump start is used (24 V or more), the
NUD3124 device will remain in its off−state and therefore
the relays will too. This is the ideal operation required during
a dual voltage jump start condition, otherwise the relays
would be activated and could create serious operation
problems in the equipment or functions that they are
controlling (windows, seats, etc.).
Conversion factors:
Ch1 – Direct (Volts)
Ch2 – Max * 20 (Amp)
Ch3 – Direct (Volts)
M1 – Area * 20 (Joules)
Load Dump Transient – 20 V/div
I
– 100 mA/div
D
V
– 20V/div
DS
P
= Ch2 x Ch3
pk
= 73 mJ
Figure 10. Waveforms Generated Across the
NUD3124 Device During a Load Dump Transient
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AND8116/D
RELAY MODULE
Common
NC
NO
COM
A
Coil (+)
NC
RELAY
B
Clamp Zener
28 V
Clamp Zener
28 V
NO
10 k
Logic Input
ESD
ESD
Zener
14 V
Zener
14 V
100 k
ESD
Zener
14 V
ESD
Zener
14 V
Ground
Figure 11. Relay Module Formed by the Integration of the NUD3124 Device within the Relay Body
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AND8116/D
Summary
applications. It is also packaged in a small three leaded
surface mount SOT−23 package that allows optimum
operation with reduced PC board space for cost reductions.
The relay module represents significant benefits for the
industrial and automotive relay markets. It reduces PC board
space and optimize the circuits design. These benefits result
in a significant added value and cost reduction for
customers. Advantages like these are always a premium.
The traditional discrete relay driver approach (bipolar
transistor, bias resistors and free−wheeling diode) is
expensive because it takes several components and a big
space in the PC board. In some cases it requires extra
protection components to achieve proper functionality in
automotive and some industrial applications.
The NUD3105 and NUD3112 relay driver devices offered
by ON Semiconductor replace the traditional discrete relay
driver approach by integrating all the necessary components
through a monolithic process. Their integrated design is
packaged in a small three leaded surface mount SOT−23
package that allows optimum operation with reduced PC
board space, which results in cost savings from the
manufacturing and components count stand point.
References
1. ON Semiconductor website: www.onsemi.com
2. A. E. Fitzgerald, David E. Higginbotham, Arvin
G. Basic Electrical Engineering, fifth edition,
1981.
3. VISTEON engineering specification, revision 3,
May 1988.
4. Automotive Electronics Council Specification
AEC – Q100 – Rev – E, January 2001.
5. JEDEC ESD specification, EIA JESD22−A114−A,
June 2000.
The NUD3124 device is intended for automotive
applications. It fully complies with major automotive
requirements such as load dump, reverse battery, dual
voltage jump start and ESD. Its unique active clamp design
makes this device to be a robust driver for automotive
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