AFGB30T65SQDN [ONSEMI]
IGBT 650V FS4 高速版，适用于 OBC 应用，D2PAK 封装;
| 型号： | AFGB30T65SQDN |
| 厂家： | 
ONSEMI |
| 描述： | IGBT 650V FS4 高速版，适用于 OBC 应用，D2PAK 封装 双极性晶体管 |
| 文件： | 总10页 (文件大小：283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
AFGB30T65SQDN
IGBT for Automotive
Applications
650 V, 30 A, D2PAK
Features
www.onsemi.com
• Maximum Junction Temperature: T = 175°C
J
• High Speed Switching Series
BV
V
TYP
I MAX
C
CES
CE(sat)
• V
= 1.6 V (typ.) @ I = 30 A
C
CE(sat)
650 V
1.6 V
120 A
• Low VF Soft Recovery Co−packaged Diode
• AEC−Q101 Qualified
• 100% of the Parts are Dynamically Tested (Note 1)
C
E
Typical Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for HEV
G
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
C
Parameter
Collector−to−Emitter Voltage
Gate−to−Emitter Voltage
Symbol
Value
650
20
Unit
V
V
CES
V
GES
V
GES
C
V
G
Transient Gate−to−Emitter Voltage
30
V
E
2
D PAK
Collector Current (T = 25°C)
I
C
60
A
C
3 LEAD
CASE 418AJ
Collector Current (T = 100°C)
30
A
C
Pulsed Collector Current (Note 2)
I
I
120
40
A
CM
MARKING DIAGRAM
Diode Forward Current (T = 25°C)
I
F
A
C
Diode Forward Current (T = 100°C)
20
A
C
&Y&Z&3&K
AFGB
Pulsed Diode Maximum Forward Current
(Note 2)
120
A
FM
30T65SQDN
Maximum Power Dissipation (T = 25°C)
P
220
110
W
W
°C
C
D
Maximum Power Dissipation (T = 100°C)
C
Operating Junction and Storage
Temperature Range
T , T
−55 to
+175
J
STG
&Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Date Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= 2−Digit Lot Traceability Code
1. V = 400 V, V = 15 V, I = 90 A, R = 100 W, Inductive Load
CC
GE
C
G
AFGB30T65SQDN = Specific Device Code
2. Repetitive rating: pulse width limited by max. Junction temperature
2
3. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.
4. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
ORDERING INFORMATION
†
Device
Package
Shipping
AFGB30T65SQDN
D2PAK
800 Units /
(TO−263)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2019 − Rev. 0
AFGB30T65SQDN/D
AFGB30T65SQDN
Table 1. THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
0.68
1.55
40
Unit
Thermal Resistance Junction−to−Case, for IGBT
Thermal Resistance Junction−to−Case, for Diode
Thermal Resistance Junction−to−Ambient
R
θJC
R
θJC
R
θJA
°C/W
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
C
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−to−Emitter Breakdown Voltage
BV
V
V
= 0 V, I = 1 mA
650
−
−
−
V
CES
GE
C
Temperature Coefficient of Breakdown
Voltage
DV
/ DT
= 0 V, I = 1 mA
−
0.6
V/°C
CES
J
GE
C
Collector Cut−Off Current
G−E Leakage Current
I
V
= V
, V = 0 V
−
−
−
−
250
400
mA
CES
CE
CES
GE
I
V
GE
= V
, V = 0 V
nA
GES
GES
CE
ON CHARACTERISTICS
Gate Threshold Voltage
V
V
= V , I = 30 mA
3.0
−
4.5
1.6
6.0
2.1
−
V
V
V
GE(th)
GE
CE
C
Collector−to−Emitter Saturation Voltage
V
I
= 30 A, V = 15 V, T = 25°C
C GE C
CE(sat)
I
C
= 30 A, V = 15 V, T = 175°C
−
1.92
GE
C
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
= 30 V, V = 0 V, f = 1 MHz
−
−
−
1871
44
−
−
−
pF
ies
CE
GE
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
C
oes
C
7
res
t
VCC = 400 V, I = 30 A, R = 6 W,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
14.5
16
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
d(on)
C
GE
G
V
= 15 V,
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
63.2
8.3
ns
d(off)
t
ns
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
E
0.783
0.160
0.943
12.8
20.8
67.2
11.5
1.01
0.369
1.379
56
mJ
mJ
mJ
ns
on
off
E
ts
t
t
VCC = 400 V, I = 30 A, R = 6 W,
d(on)
C
GE
G
V
= 15 V,
t
ns
r
Inductive Load, T = 175°C
C
Turn−Off Delay Time
Fall Time
ns
d(off)
t
ns
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
E
E
mJ
mJ
mJ
nC
nC
nC
on
off
E
ts
Q
V = 400 V, I = 30 A,
CE C
g
V
GE
= 15 V
Gate−to−Emitter Charge
Gate−to−Collector Charge
Q
11
ge
gc
Q
14
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2
AFGB30T65SQDN
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
C
Parameter
DIODE CHARACTERISTICS
Diode Forward Voltage
Symbol
Test Condition
Min
Typ
Max
Unit
V
E
I = 20 A
F
−
−
−
−
−
−
−
1.5
22
2.1
−
V
FM
Reverse Recovery Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Recovery Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I = 20 A
mJ
ns
nC
mJ
ns
nC
rec
F
dI /dt = 200 A/ms, T = 25°C
F
C
t
rr
131
348
100
245
961
−
Q
−
rr
E
rec
I = 20 A
−
F
dI /dt = 200 A/ms, T = 175°C
F
C
t
rr
−
Q
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
AFGB30T65SQDN
TYPICAL CHARACTERISTICS
180
150
120
90
180
20 V
12 V
20 V
T
C
= 25°C
T
C
= 175°C
10 V
150
120
90
15 V
15 V
12 V
10 V
V
GE
= 8 V
V
GE
= 8 V
60
60
30
0
30
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Typical Output Characteristics (255C)
Figure 2. Typical Output Characteristics
(1755C)
180
150
120
90
3.0
2.5
2.0
T
C
= 25°C
Common Emitter
= 15 V
Common Emitter
= 15 V
V
GE
V
GE
60 A
T
= 175°C
C
30 A
15 A
60
1.5
1.0
30
0
0
1
2
3
4
5
−100
−50
0
50
100
150
200
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
T , COLLECT−EMITTER CASE TEMPERATURE (°C)
C
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
16
12
8
20
16
Common Emitter
Common Emitter
= 25°C
T
C
= 175°C
T
C
I
C
= 15 A
I = 60 A
C
I
C
= 15 A
I = 60 A
C
12
8
I
C
= 30 A
I
C
= 30 A
4
0
4
0
0
4
8
12
16
20
0
4
8
12
16
20
V
GE
, GATE−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 5. Saturation Voltage vs. VGE (255C)
Figure 6. Saturation Voltage vs. VGE (1755C)
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4
AFGB30T65SQDN
TYPICAL CHARACTERISTICS
10K
1K
15
Common Emitter
= 25°C
T
C
300 V
C
ies
12
9
400 V
V
CC
= 200 V
100
C
C
oes
6
10
1
Common Emitter
= 0 V, f = 1 MHz
res
3
0
V
GE
T
C
= 25°C
1
0
0
10
, COLLECTOR−EMITTER VOLTAGE (V)
100
0
0
0
10
20
30
40
50
60
70
80
V
CE
Q , GATE CHARGE (nC)
g
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
100
1000
100
Common Emitter
= 400 V, V = 15 V
T
= 25°C
= 175°C
C
V
CC
T
C
GE
t
d(off)
I
C
= 30 A
t
r
t
f
t
d(on)
10
1
Common Emitter
= 400 V, V = 15 V
V
CC
GE
T
= 25°C
= 175°C
C
I
C
= 30 A
T
C
10
10
20
30
40
10
20
30
40
50
R , GATE RESISTANCE (W)
G
R , GATE RESISTANCE (W)
G
Figure 9. Turn−on Characteristics vs. Gate
Figure 10. Turn−off Characteristics vs. Gate
Resistance
Resistance
200
100
t
r
100
t
d(off)
t
d(on)
t
f
10
1
10
1
Common Emitter
= 15 V, R = 6 W
V
GE
G
T
C
= 25°C
Common Emitter
T
= 25°C
= 175°C
C
T
C
= 175°C
V
= 15 V, R = 6 W
T
C
GE
G
25
50
75
100
125
150
25
50
75
100
125
150
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Turn−on Characteristics vs.
Figure 12. Turn−off Characteristics vs.
Collector Current
Collector Current
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5
AFGB30T65SQDN
TYPICAL CHARACTERISTICS
10K
10K
1K
Common Emitter
= 400 V, V = 15 V
V
CC
GE
I
C
= 30 A
E
E
on
E
E
on
1K
off
off
Common Emitter
100
10
V
GE
= 15 V, R = 6 W
G
T
= 25°C
= 175°C
T
C
= 25°C
C
T
C
T
C
= 175°C
100
0
10
20
30
40
50
1000
40
0
0
0
25
50
75
100
125
150
R , GATE RESISTANCE (W)
I , COLLECTOR CURRENT (A)
G
C
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector
Current
100
100
10
1
10 ms
100 ms
1 ms
10
10 ms
T = 175°C
J
DC
0.1
T
= 25°C
T = 75°C
J
C
T = 175°C
J
T = 25°C
J
Single Pulse
0.01
1
1
10
100
1
2
3
4
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 15. SOA Characteristics
Figure 16. Forward Characteristics
10
9
400
350
300
250
200
150
100
T
= 25°C
di/dt = 100 A/ms
T
= 25°C
C
C
T
C
= 175°C
T
= 175°C
C
di/dt = 200 A/ms
di/dt = 200 A/ms
8
di/dt = 200 A/ms
7
6
di/dt = 100 A/ms
di/dt = 200 A/ms
5
di/dt = 100 A/ms
di/dt = 100 A/ms
4
3
2
50
0
1
0
0
5
10
15
20
25
30
35
5
10
15
20
25
30
35
40
I , FORWARD CURRENT (A)
F
I , FORWARD CURRENT (A)
F
Figure 17. Reverse Recovery Current
Figure 18. Reverse Recovery Time
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6
AFGB30T65SQDN
TYPICAL CHARACTERISTICS
1400
1200
1000
800
di/dt = 200 A/ms
di/dt = 100 A/ms
T
= 25°C
= 175°C
C
T
C
600
di/dt = 200 A/ms
di/dt = 100 A/ms
400
200
0
0
10
20
30
40
I , FORWARD CURRENT (A)
F
Figure 19. Stored Charge
1
0.5
0.2
PDM
0.1
0.1
0.05
0.02
t1
t2
0.01
Duty Factor, D = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
Single Pulse
0.00001
0.01
0.0001
0.001
0.01
0.1
1
10
RECTANGULAR PULSE DURATION (sec)
Figure 20. Transient Thermal Impedance of IGBT
0.5
0.2
1
0.1
PDM
0.05
0.02
0.1
t1
t2
0.01
Duty Factor, D = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
Single Pulse
0.00001
0.01
0.0001
0.001
0.01
0.1
1
10
RECTANGULAR PULSE DURATION (sec)
Figure 21. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE E
DATE 25 OCT 2019
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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