AFGHL40T65SPD [ONSEMI]
IGBT, 650V 40A in TO247 providing enhanced Final Test coverage for better and robuster performance.;
| 型号： | AFGHL40T65SPD |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, 650V 40A in TO247 providing enhanced Final Test coverage for better and robuster performance. 双极性晶体管 |
| 文件： | 总10页 (文件大小：405K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Field Stop Trench IGBT
40 A, 650 V
AFGHL40T65SPD
Description
rd
Using the novel field stop 3 generation IGBT technology,
AFGHL40T65SPD offers the optimum performance with both low
conduction loss and switching loss for a high efficiency operation in
various applications, which provides 50 V higher blocking voltage
and rugged high current switching reliability.
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V
CES
E
on
V
CE(Sat)
Meanwhile, this part also offers and advantage of outstanding
performance in parallel operation.
650 V
1.16 mJ
1.85 V
Features
C
• AEC−Q101 Qualified
• Low Saturation Voltage: V
= 1.85 V (Typ.) @ I = 40 A
C
CE(Sat)
• 100% Of The Part Are Dynamically Tested (Note 1)
• Short Circuit Ruggedness > 5 mS @ 25°C
G
• Maximum Junction Temperature: T = 175°C
J
E
• Fast Switching
• Tight Parameter Distribution
• Positive Temperature Co−efficient for Easy Parallel Operating
• Co−Packed With Soft And Fast Recovery Diode
Typical Applications
• On−board Charger
G
C
E
TO−247−3L
• Air Conditioner Compressor
• PTC Heater
CASE 340CX
• Motor Drivers
MARKING DIAGRAM
• Other Automotive Power−Train Applications
&Y&Z&3&K
AFGHL
40T65SPD
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Data code
= 2−Digit Lot Traceability code
AFGHL40T65SPD = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
AFGHL40T65SPD TO−247−3L
30 Units / Rail
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
September, 2020 − Rev. 5
AFGHL40T65SPD/D
AFGHL40T65SPD
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Description
Ratings
Units
V
V
Collector to Emitter Voltage
Gate to Emitter Voltage
650
V
V
V
A
CES
GES
20
Transient Gate to Emitter Voltage
30
I
C
Collector Current @ T = 25°C
80
C
Collector Current @ T = 100°C
40
C
I
I
Pulsed Collector Current (Note 2)
120
A
A
CM
I
F
Diode Forward Current @ T = 25°C
40
C
Diode Forward Current @ T = 100°C
20
120
C
Pulsed Diode Maximum Forward Current (Note 2)
A
FM
P
D
Maximum Power Dissipation @ T = 25°C
267
W
C
Maximum Power Dissipation @ T = 100°C
134
C
SCWT
Short Circuit Withstand Time @ T = 25°C
5
ms
°C
°C
°C
C
T
J
Operating Junction Temperature
Storage Temperature Range
−55 to +175
−55 to +175
300
T
stg
T
L
Maximum Lead Temp. For soldering
Purposes, ⅛” from case for 5 seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V = 400 V, V = 15 V, I = 120 A, R = 20 W, Inductive Load.
CC
GE
C
G
2. Repetitive rating: pulse width limited by max. Junction temperature.
THERMAL CHARACTERISTICS
Symbol
Rating
Thermal Resistance Junction to Case, for IGBT
Thermal Resistance Junction to Case, for Diode
Thermal Resistance Junction to Ambient
Max.
0.43
1.69
40
Units
_C/W
_C/W
_C/W
R
q
JC
R
q
JC
R
q
JA
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2
AFGHL40T65SPD
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector−emitter Breakdown Voltage,
Gate−emitter Short−circuited
V
V
= 0 V, I = 1mA
BVCES
650
−
−
−
V
V/_C
mA
GE
C
Temperature Coefficient of Breakdown
Voltage
= 0 V, I = 1mA
−
0.6
GE
C
Collector−emitter Cut−off Current,
Gate−emitter Short−circuited
V
GE
V
GE
= 0 V, V = 650 V
ICES
IGES
−
−
−
750
250
−
CE
= 0 V, V = 650 V, T 175_C
CE
J =
Gate Leakage Current, Collector−emitter
Short−circuited
V
GE
= 20 V, V = 0 V
−
−
400
nA
CE
ON CHARACTERISTICS
Gate−emitter Threshold Voltage
Collector−emitter Saturation Voltage
V
= V , I = 40 mA
VGE(th)
4.0
5.0
7.5
V
V
GE
CE
C
V
GE
V
GE
= 15 V, I = 40 A
VCE(sat)
1.4
−
1.85
2.51
2.4
−
C
= 15 V, I = 40 A, T = 175_C
C
J
DYNAMIC CHARACTERISTICS
Input Capacitance
V
= 30 V, V = 0 V, f = 1 MHz
Cies
Coes
Cres
−
−
−
−
−
−
1518
91
−
−
−
−
−
−
pF
nC
CE
CE
GE
Output Capacitance
Reverse Transfer Capacitance
Gate Charge Total
15
V
= 400 V, I = 40 V, V = 15 V
Q
g
36
C
GE
Gate to Emitter Charge
Gate to Collector Charge
SWITCHING CHARACTERISTICS
Turn−on Delay Time
Rise Time
Qge
Qgc
11
12
T
= 25_C
td(on)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
18
42
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
C
CC
V
= 400 V, I = 40 A
C
t
r
Rg = 6 W
= 15 V
V
GE
Turn−off Delay Time
Fall Time
td(off)
35
Inductive Load, T = 25_C
C
t
f
10
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
Eon
Eoff
1.16
0.27
1.43
16
mJ
ns
Ets
T
= 175_C
td(on)
C
CC
V
= 400 V, I = 40 A
C
t
r
40
Rg = 6 W
= 15 V
V
GE
Turn−off Delay Time
Fall Time
td(off)
37
Inductive Load
t
f
11
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
DIODE CHARACTERISTICS
Forward Voltage
Eon
Eoff
Ets
1.59
0.42
2.01
mJ
I = 20 A
V
F
1.4
−
2.2
1.9
2.7
−
V
F
I = 20 A, T = 175_C
F
J
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
T = 25_C
trr
Qrr
trr
−
−
−
−
−
35
58
−
−
−
−
−
ns
mC
ns
mC
mJ
J
F
I = 20 A, di /dt = 200 A/ms
F
T = 175_C
214
776
51
J
I = 20 A, di /dt = 200 A/ms
F
F
Qrr
Erec
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
AFGHL40T65SPD
TYPICAL PERFORMANCE CHARACTERISTICS
120
90
60
30
0
120
o
o
T
= 25 C
T
= 175 C
C
C
20V
15V
12V
20V
15V
12V
10V
90
60
30
0
10V
V
= 8V
V
= 8V
GE
GE
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector−Emitter Voltage, VCE[V]
Collector−Emitter Voltage, VCE[V]
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
120
90
60
30
0
Common Emitter
CE
Common Emitter
V
= 20V
V
T
T
= 15V
o
GE
o
T
= 25 C
C
= 25 C
C
C
90
60
30
0
o
o
T
C
= 175 C
= 175 C
0
1
2
3
4
5
6
2
4
6
8
10
12
14
16
Collector−Emitter Voltage, VCE[V]
Gate−Emitter Voltage,VGE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
5
4
3
2
1
Common Emitter
Common Emitter
o
C
V
= 15V
GE
T
= −40 C
80A
40A
80A
40A
I
= 20A
C
I
= 20A
C
−100
−50
0
50
100
150
200
Collector−Emitter Case Temperature, TC[oC]
Gate−Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
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4
AFGHL40T65SPD
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
20
20
16
12
8
Common Emitter
o
C
Common Emitter
o
T
= 25 C
T
= 175 C
C
16
12
8
80A
I
= 20A
80A
40A
C
40A
I
= 20A
C
4
4
0
0
4
8
12
16
20
4
8
12
16
20
Gate−Emitter Voltage, VGE [V]
Gate−Emitter Voltage, VGE [V]
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
10000
1000
100
15
12
9
Common Emitter
Common Emitter
o
V
= 0V, f = 1MHz
o
GE
T
C
= 25 C
V
= 200V
CC
300V
T
= 25 C
C
C
ies
400V
C
oes
6
C
res
3
10
0
11
0
0
10
20
30
40
30
Collector−Emitter Voltage, VCE[V]
Gate Charge, Qg [nC]
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
300
100
200
100
10
1
10ms
100ms
10
1
1ms
10 ms
DC
*Notes:
o
1. T = 25 C
C
o
Safe Operating Area
o
2. T = 175 C
J
V
= 15V, T = 175 C
C
3. Single Pulse
GE
0.1
1
10
100
1000
1
10
100
1000
Collector−Emitter Voltage, VCE[V]
Collector−Emitter Voltage, VCE[V]
Figure 11. SOA Characteristics
Figure 12. Turn off Switching SOA
Characteristics
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5
AFGHL40T65SPD
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
200
100
1000
Common Emitter
V
= 400V, V = 15V
CC
GE
I
= 40A
C
o
T
T
= 25 C
C
C
t
o
r
= 175 C
t
100
t
d(off)
d(on)
10
Common Emitter
= 400V, V = 15V
V
CC
GE
t
f
I
= 40A
C
o
T
T
= 25 C
C
C
o
= 175 C
1
10
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG [W]
Gate Resistance, RG [W]
Figure 13. Turn−on Characteristics vs. Gate
Figure 14. Turn−off Characteristics vs. Gate
Resistance
Resistance
1000
200
Common Emitter
Common Emitter
V
= 15V, R = 6W
V
= 15V, R = 6W
GE
G
GE
G
o
o
T
= 25 C
T
= 25 C
C
C
t
o
o
r
T
= 175 C
T
= 175 C
C
C
100
10
5
100
10
1
t
f
t
t
d(on)
d(off)
20
40
60
80
20
40
60
80
Collector Current, IC [A]
Collector Current, I C [A]
Figure 15. Turn−on Characteristics vs. Collector
Figure 16. Turn−off Characteristics vs. Collector
Current
Current
20000
20000
Common Emitter
Common Emitter
V
= 400V, V = 15V
V
= 15V, R = 6W
10000
1000
100
10000
1000
100
CC
GE
GE
G
I
= 40A
o
C
T
= 25 C
C
E
o
on
T
= 25 C
o
C
T
= 175 C
C
o
T
= 175 C
E
C
on
E
off
E
off
0
10
20
30
40
50
30
60
Gate Resistance, RG[W]
Collector Current, IC [A]
Figure 17. Switching Loss vs Gate Resistance
Figure 18. Switching Loss vs Collector Current
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6
AFGHL40T65SPD
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
200
100
10000
o
T
= 175 C
C
1000
100
10
o
T
C
= 125 C
o
T
= 125 C
J
o
T
= 175 C
J
10
o
T
T
T
T
= 25 C
C
C
C
C
1
o
= 75 C
o
T
= 25 C
o
C
o
T
= 75 C
0.1
0.01
J
= 125 C
o
o
T
J
= 25 C
= 175 C
1
0
1
2
3
4
5
50
200
400
600 650
Forward Voltage, VF [V]
Reverse Voltage, VR [V]
Figure 19. Forward Characteristics
Figure 20. Reverse Current
800
600
400
200
0
300
250
200
150
100
50
o
o
T = 25 C
C
T
T
= 25 C
C
C
o
o
T = 175 C
C
= 175 C ---
di/dt = 100A/ms
di/dt = 200A/ms
di/dt = 100Am/ s
di/dt =200A/ms
0
0
10
20
30
40
50
0
10
20
30
40
50
Forward Current, IF[A]
Forward Current, IF [A]
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
8
6
4
2
0
o
T
= 25 C
C
o
T
= 175 C
di/dt = 200A/ms
di/dt = 100A/ms
C
di/dt = 200A/ms
di/dt = 100A/ms
0
10
20
30
40
Forward Current, IF[A]
Figure 23. Reverse Recovery Current
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7
AFGHL40T65SPD
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1
0.5
0.2
0.1
0.1
0.0
0.0
0.0
Single
Pulse
0.01
−3
1E
−5
−4
−3
−2
−1
0
1
2
10
10
10
10
10
10
10
10
Rectangular Pulse Duration [s]
Figure 24. Transient Thermal Impedance of IGBT
10
0.5
1
0.1
0.2
0.1
0.0
0.0
Single
Pulse
0.01
−3
1E
−5
−4
−3
−2
−1
0
1
2
10
10
10
10
10
10
10
10
Rectangular Pulse Duration [s]
Figure 25. Transient Thermal Impedance of Diode
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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