2SC5347AE [ONSEMI]
TRANSISTOR,BJT,NPN,12V V(BR)CEO,150MA I(C),SOT-89;
| 型号： | 2SC5347AE |
| 厂家： | 
ONSEMI |
| 描述： | TRANSISTOR,BJT,NPN,12V V(BR)CEO,150MA I(C),SOT-89 |
| 文件： | 总6页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1087
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
High-Frequency Semi-Power Output Stage,
Low-Noise Medium Output Amplifier Applications
2SC5347A
Features
•
High-frequency medium output amplification
(V =5V, I =50mA)
CE
C
: f =4.7GHz typ (f=1GHz).
T
:⏐S21e⏐2=8dB typ (f=1GHz).
: NF=1.8dB typ (f=1GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
20
12
CBO
CEO
EBO
V
2
V
I
150
1.3
150
mA
W
C
Collector Dissipation
P
When mounted on ceramic substrate (900mm2✕0.8mm)
C
Junction Temperature
Storage Temperature
Tj
°C
°C
Tstg
--55 to +150
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
www.semiconductor-sanyo.com/network
D0308AB MS IM TC-00001778
No. A1087-1/6
2SC5347A
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1.0
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
I
V
CB
V
EB
V
CE
V
CE
V
CB
V
CB
V
CE
V
CE
=10V, I =0A
μA
μA
CBO
EBO
E
=1V, I =0A
10
C
h
=5V, I =50mA
60*
270*
FE
C
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
f
=5V, I =50mA
C
3
4.7
1.3
0.9
8
GHz
pF
T
Cob
Cre
=10V, f=1MHz
=10V, f=1MHz
2.0
3.0
pF
2
⏐
S21e
=5V, I =50mA, f=1GHz
6
dB
⏐
C
NF
=5V, I =50mA, f=1GHz
1.8
dB
C
* : The 2SC5347A is classified by 50mA h as follows :
FE
Marking
Rank
CZ
D
CZ
E
CZ
F
h
60 to 120
90 to 180
135 to 270
FE
Package Dimensions
unit : mm (typ)
7007A-004
Top View
4.5
1.6
1.5
1
2
3
0.4
0.5
0.4
1.5
3.0
0.75
1 : Base
2 : Collector
3 : Emitter
Bottom View
SANYO : PCP
No. A1087-2/6
2SC5347A
I
-- V
h
FE
-- I
C
CE
C
160
140
120
100
80
5
V
CE
=5V
3
2
60
100
40
7
5
20
0
I =0μA
8
B
2
3
5
7
2
3
5
7
100
2
3
0
2
4
6
10
1.0
10
Collector Current, I -- mA
IT14231
Collector-to-Emitter Voltage, V
-- V IT14230
C
CE
f
-- I
Cob -- V
T
C
CB
10
5
f=1MHz
V
=5V
CE
7
3
2
5
3
2
1.0
7
5
1.0
7
5
3
2
3
2
0.1
0.1
7
2
3
5
7
2
3
5
7
2
3
3
5
7
3
5
7
10
3
7
2
2
2
1.0
10
100
0.1
1.0
ITR08158
Collector-to-Base Voltage, V
-- V ITR08159
Collector Current, I -- mA
C
CB
NF -- I
C
Cre -- V
CB
5
12
10
8
V
=5V
f=1MHz
CE
f=1GHz
3
2
1.0
7
5
6
4
3
2
2
0
0.1
3
5
3
5
3
7
2
3
5
7
2
3
5
7
100
2
3
7
2
7
2
7
2
0.1
1.0
1.0
10
10
Collector Current, I -- mA
ITR08162
Collector-to-Base Voltage, V
-- V ITR08160
C
CB
2
P
-- Ta
S21e
-- I
⏐
⏐
C
C
12
1.4
1.3
V
=5V
When mounted on ceramic substrate
CE
(900mm2✕0.8mm)
f=1GHz
1.2
1.0
0.8
0.6
0.4
10
8
6
4
2
0
0.2
0
2
3
5
7
2
3
5
7
100
2
3
0
20
40
60
80
100
120
140
160
1.0
10
ITR08163
ITR08161
Ambient Temperature, Ta -- °C
Collector Current, I -- mA
C
No. A1087-3/6
2SC5347A
S Parameter
S11e
S21e
f=100MHz to 1200MHz(100MHz Step)
f=100MHz to 1200MHz(100MHz Step)
0.1GHz
90°
V
=5V
CE
I =50mA
C
j50
60°
120°
V
=8V
CE
I =70mA
j25
C
j100
V
=5V
CE
I =20mA
C
j150
j200
j250
150°
30°
V
=5V
CE
I =50mA
C
j10
1.2GHz
=5V
1.2GHz
4
8
12
16
20
180°
0
25 50
100
10
150 250 500
0
V
=8V
CE
I =70mA
V
C
CE
I =20mA
C
--j250
--j200
--j10
--30°
--150°
--j150
--j100
--j25
--60°
--120°
--j50
--90°
ITR08164
ITR08165
S12e
S22e
f=100MHz to 1200MHz(100MHz Step)
f=100MHz to 1200MHz(100MHz Step)
V
=5V
CE
I =50mA
C
90°
1.2GHz
j50
60°
120°
j25
V
=8V
j100
CE
I =70mA
C
V
=5V
j150
150°
CE
30°
I =20mA
C
j200
j250
j10
0.04 0.08 0.12 0.16
180°
0.2 0
25
50
=5V
100
500
10
150 250
0
V
V
=8V
CE
CE
I =50mA
I =70mA
C
C
1.2GHz
--j250
--j200
--j10
V
=5V
CE
I =20mA
--30°
--150°
C
--j150
--j100
--j25
--60°
--120°
--j50
--90°
ITR08166
ITR08167
No. A1087-4/6
2SC5347A
S Parameters (Common emitter)
V
V
V
=5V, I =50mA, Z =50Ω
CE
C
O
Freq(MHz)
100
⏐S11
⏐
∠S11
--141.0
--165.7
--176.8
174.9
169.3
163.9
158.5
153.5
149.8
145.3
141.5
137.6
⏐S21
⏐
∠S21
105.9
93.3
86.8
81.9
77.6
73.5
69.9
66.4
62.9
59.4
56.5
53.0
⏐S12
⏐
∠S12
68.4
72.7
74.1
73.7
72.8
71.7
70.2
68.6
66.7
65.1
63.0
61.4
⏐S22
⏐
∠S22
--63.0
--68.4
--69.7
--72.3
--75.3
--78.6
--82.1
--85.6
--90.1
--92.3
--95.1
--97.8
0.358
0.354
0.355
0.359
0.359
0.362
0.366
0.364
0.368
0.370
0.373
0.377
24.005
12.593
8.532
6.428
5.293
4.360
3.774
3.334
2.995
2.725
2.494
2.307
0.027
0.047
0.068
0.089
0.110
0.130
0.151
0.171
0.191
0.210
0.230
0.248
0.342
0.205
0.166
0.149
0.145
0.143
0.147
0.151
0.158
0.166
0.170
0.177
200
300
400
500
600
700
800
900
1000
1100
1200
=5V, I =20mA, Z =50Ω
CE
C
O
Freq(MHz)
100
⏐S11
⏐
∠S11
--115.4
--149.6
--165.7
--176.5
176.7
169.4
163.8
158.4
154.1
149.3
144.9
141.0
⏐S21
⏐
∠S21
113.8
97.4
89.3
82.5
78.4
73.9
70.0
66.4
62.5
58.9
55.5
51.8
⏐S12
⏐
∠S12
59.7
63.4
67.0
68.5
68.8
68.6
67.8
67.1
65.7
64.5
62.9
61.8
⏐S22
⏐
∠S22
--52.4
--58.0
--58.8
--60.0
--62.2
--64.7
--67.9
--71.2
--74.7
--78.1
--81.4
--84.1
0.445
0.400
0.394
0.391
0.391
0.392
0.393
0.394
0.396
0.399
0.403
0.408
21.095
11.567
7.917
5.974
4.845
4.065
3.522
3.114
2.798
2.548
2.333
2.158
0.032
0.049
0.066
0.085
0.103
0.122
0.141
0.159
0.178
0.196
0.215
0.233
0.479
0.300
0.242
0.214
0.203
0.199
0.198
0.201
0.204
0.212
0.218
0.224
200
300
400
500
600
700
800
900
1000
1100
1200
=8V, I =70mA, Z =50Ω
CE
C
O
Freq(MHz)
100
⏐S11
⏐
∠S11
--141.2
--165.7
--176.6
175.1
169.5
163.6
158.4
153.5
150.0
144.7
141.2
138.0
⏐S21
⏐
∠S21
105.1
93.0
86.7
81.8
77.8
73.7
70.2
66.7
63.3
60.0
57.0
53.4
⏐S12
⏐
∠S12
70.5
75.0
75.8
75.5
74.5
73.4
71.8
70.4
68.5
67.1
65.1
62.6
⏐S22
⏐
∠S22
--50.8
--48.9
--47.0
--48.0
--50.5
--53.6
--57.3
--60.9
--65.1
--69.0
--72.1
--75.3
0.328
0.323
0.323
0.326
0.325
0.328
0.330
0.333
0.335
0.341
0.345
0.348
25.505
13.334
9.025
6.819
5.481
4.612
3.980
3.524
3.148
2.866
2.629
2.424
0.024
0.043
0.062
0.081
0.100
0.119
0.139
0.157
0.177
0.194
0.213
0.230
0.348
0.233
0.204
0.191
0.187
0.185
0.188
0.191
0.198
0.204
0.208
0.215
200
300
400
500
600
700
800
900
1000
1100
1200
No. A1087-5/6
2SC5347A
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of December, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1087-6/6
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