2SC535-B [RENESAS]
VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92;
| 型号： | 2SC535-B |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 晶体 晶体管 放大器 |
| 文件： | 总8页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC535
Silicon NPN Epitaxial Planar
REJ03G0683-0200
(Previous ADE-208-1047)
Rev.2.00
Aug.10.2005
Application
VHF amplifier, mixer, local oscillator
Outline
RENESAS Package code: PRSS0003DA-C
(Package name: TO-92 (2))
1. Emitter
Collector
e
Absolute Maximum Rating
(Ta = 25°C)
Item
Collector to base voltage
ymbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
30
Collector to emitter vol
Emitter to base volta
Collector current
20
V
4
20
V
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
100
Tj
150
Tstg
–55 to +150
Rev.2.00 Aug 10, 2005 page 1 of 7
2SC535
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min
30
20
4
Typ
—
Max
—
Unit
V
Test conditions
IC = 10 µA, IE = 0
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
—
—
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 10 V, IE = 0
—
—
V
—
—
0.5
200
—
µA
DC current transfer ratio
hFE*1
60
—
—
VCE = 6 V, IC = 1 mA
VCE = 6 V, IC = 1 mA
IC = 20 mA, IB =4 mA
Base to emitter voltage
VBE
0.72
0.17
940
0.9
20
V
V
Collector to emitter saturation voltage
Gain bandwidth product
VCE(sat)
fT
—
—
450
—
—
MHz VCE = 6 V, IC = 5 mA
Collector output capacitance
Power gain
Cob
1.2
—
pF
dB
VCB = 10 V, IE = 0, f = 1 MHz
PG
17
VCE = 6 V, IC = 1 mA,
f = 100 MHz
Noise figure
NF
yie
—
3.5
5.5
dB
VCE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 50 Ω
Input admittance (typ)
1.3 + j5.3
VCE = 6 V, IC = 1 mA,
100 MHz
Reverse transfer admittance (typ)
Forward transfer admittance (typ)
Output admittance (typ)
yre
yfe
–0.078 – j0.4
32 – j1
yoe
0.08
Note: 1. The 2SC535 is grouped by hFE as follows.
B
C
60 to 120
100 to 200
Rev.2.00 Aug 10, 2005 page 2 of 7
2SC535
Main Characteristics
Typical Output Characteristics
Maximum Collector Dissipation Curve
150
100
50
20
16
12
8
300
275
250
225
200
175
150
125
100
75
50
4
25 µA
IB = 0
0
50
100
150
0
4
8
12
16
20
Collector ter Voltage VCE (V)
Ambient Tmperature Ta (°C)
sfer Ratio vs.
rent
Typical Output Characteristics
5
4
3
2
1
20
0
IB
0
4
8
0.1 0.2
0.5 1.0
2
5
10
20
Collector to
Collector Current IC (mA)
Typical Transfer Cahracteristics (2)
VCE = 6 V
Typical Tran(1)
VCE = 6 V
20
16
12
8
5
4
3
2
1
0
4
0
0.6
0.7
0.8
0.6
0.7
0.8
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
Rev.2.00 Aug 10, 2005 page 3 of 7
2SC535
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
1.5
1.3
1.1
0.9
0.7
0.5
f = 1 MHz
IE = 0
1,000
800
600
400
200
0
VCE = 6 V
0.1
0.2
0.5
1.0
2
5
10
20
0.3
1.0
3
10
30
Collctor Current IC (mA)
Collector to Base Voltage VCB (V)
Noise Figure vs. Collector Current
NSource Resistance
8
6
4
2
0
0
IC = 1 mA
f = 100 MHz
Rg = 50 Ω
CE = 6 V
IC = 1 mA
f = 100 MHz
0.2
0.5
1.0
20
50
100
200
500
1,000
Collect
Signal Source Resistance Rg (Ω)
Noise
Em
100 MHz Power Gain Test Circuit
8
6
4
2
0
VCE = 6 V
f = 100 MHz
Rg = 50 Ω
IN
f = 100 MHz
Rg = 100 Ω
D.U.T.
300 p
0.1 µ
OUT
Rl = 550 Ω
10 p
max
3 k
500
0.01 µ
0.01 µ 0.01 µ
VEE VCC
Unit R : Ω
C : F
1
2
5
10
20
Collecter to Emitter Voltage VCE (V)
Rev.2.00 Aug 10, 2005 page 4 of 7
2SC535
Reverse Transfer Admittance
Characteristics
Reverse Transfer Conductance gre (mS)
Input Admittance Characteristics
–0.20 –0.16 –0.12 –0.08 –0.04
0
18
16
14
12
10
8
yie = gie + jbie
VCE = 6 V
yre = gre + jbre
VCE = 6 V
f = 50 MHz
70
–0.2
–0.4
–0.6
–0.8
–1.0
150
200
100
150
200
f = 200 MHz
150
100
70
50 MHz
5 mA
6
100
70
3 mA
4
2 mA
IC = 5 mA 3 2 1
50
2
IC = 1 mA
0
2
4
6
8
10 12 14 16 18
Input Conductance gie (mS)
Forward Transfer Admittance
Characteristics
Forward Transfer Conductance g (mS)
acteristics
fe
0
20
40
60
80 100 120
0.4
yfe = gfe + jbfe
VCE = 6 V
–20
–40
IC = 1 mA
2 mA
2
3
5
f = 50 MHz
f = 200 MHz
3 mA
–60
150
70
–80
5 mA
200
100
100
150
–100
–120
70
50
0
0.1
0.2
0.3 0.4
0.5
0.6
Output Conductance goe (mS)
Input A
to E
Input Admittance vs. Collector Current
20
10
5
yie = gie + jbie
VCE = 6 V
f = 100 MHz
bie
10
5
yie = gie + jbie
IC = 1 mA
f = 100 MHz
bie
2
1.0
0.5
2
gie
1.0
gie
0.2
0.5
0.1 0.2
0.5 1.0
2
5
10
1
2
5
10
20
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 5 of 7
2SC535
Reverse Transfer Admittance vs.
Collector to Emitter Voltage
Reverse Transrer Admittance vs.
Collector Current
–1.0
–0.5
–0.1
–1.0
–0.1
bre
–0.05
–0.05
–5
bre
yre = gre + jbre
VCE = 6 V
f = 100 MHz
gre
–0.2
–0.1
–0.02
–0.01
yre = gre + jbre
IC = 1 mA
f = 100 MHz
–0.02
–0.01
–0.005
–0.2
–0.1
–0.05
–0.005
gre
–0.02
–0.01
–0.002
–0.001
–0.05
0.1 0.2
0.5 1.0
2
5
10
1
2
5
10
20
Collector to Emitter Voltage VCE (V)
CollectoCurrent IC (mA)
Forward Transfer Admittance vs.
Collector to Emitter Voltage
Formittance vs.
nt
100
50
1
yfe = gfe + jbfe
IC = 1 mA
f = 100 MHz
gfe
–bfe
20
10
–bfe
1
5
1
2
5
0.1 0.2
0.5 1.0
2
5
10
Collector to Emitt
Collector Current IC (mA)
Output
to
Output Admittance vs. Collector Current
2.0
2.0
1.0
0.5
0.2
boe
1.0
0.5
goe
boe
0.1
0.05
0.2
0.1
yeo = goe + jboe
IC = 1 mA
f = 100 MHz
goe
0.2
0.1
0.02
0.01
0.05
yoe = goe + jboe
VCE = 6 V
f = 100 MHz
0.02
1
2
5
10
20
0.1 0.2
0.5 1.0
2
5
10
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
Rev.2.00 Aug 10, 2005 page 6 of 7
2SC535
Package Dimensions
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003DA-C
Package Name
MASS[Typ.]
0.25g
Unit: mm
TO-92(2) / TO-92(2)V
4.8 0.3
3.8 0.3
0.60 Max
0.5 Max
0.5 Max
1.27
2.54
Ordering Information
Part Name
Shipping Container
ox, Radial Taping
2SC535BTZ
2SC535CTZ
2500
Note: For some grades, prease contact the Renesas sales office to check the state of
production before
Rev.2.00 Aug 10, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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