2N6498BVBV [ONSEMI]
TRANSISTOR 5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN, BIP General Purpose Power;
| 型号： | 2N6498BVBV |
| 厂家： | 
ONSEMI |
| 描述： | TRANSISTOR 5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN, BIP General Purpose Power 晶体 晶体管 功率双极晶体管 开关 局域网 |
| 文件： | 总8页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor)
High Voltage NPN Silicon
Power Transistors
2N6497
. . . designed for high voltage inverters, switching regulators and
line–operated amplifier applications. Especially well suited for
switching power supply applications.
5 AMPERE
POWER TRANSISTORS
NPN SILICON
250 VOLT
• High Collector–Emitter Sustaining Voltage –
V
= 250 Vdc (Min)
80 WATTS
CEO(sus)
• Excellent DC Current Gain
= 10–75 @ I = 2.5 Adc
h
FE
C
• Low Collector–Emitter Saturation Voltage @ I = 2.5 Adc –
C
V
= 1.0 Vdc (Max)
CE(sat)
4
MAXIMUM RATINGS (1)
Rating
Symbol
Value
250
350
6.0
Unit
Vdc
Vdc
Vdc
Adc
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
V
CEO
V
CB
1
4. COLLECTOR
2
3
V
EB
CASE 221A–09
TO–220AB
I
C
5.0
10
–
Peak
Base Current
I
B
2.0
Adc
Total Power Dissipation @ T = 25_C
P
80
0.64
Watts
W/_C
_C
C
D
Derate above 25_C
Operating and Storage Junction
Temperature Range
T ,T
J stg
–65 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
(1) Indicates JEDEC Registered Data.
R
1.56
_C/W
θJC
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
April, 2002 – Rev. 11
2N6497/D
2N6497
*ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Vdc
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(I = 25 mAdc, I = 0)
V
CEO(sus)
–
250
–
C
B
Collector Cutoff Current
I
mAdc
CEX
(V
CE
(V
CE
= 350 Vdc, V
= 175 Vdc, V
= 1.5 Vdc)
= 1.5 Vdc, T = 100_C)
–
–
–
–
1.0
10
BE(off)
BE(off)
C
Emitter Cutoff Current
(V = 6.0 Vdc, I = 0)
I
–
–
1.0
mAdc
EBO
BE
C
ON CHARACTERISTICS (1)
DC Current Gain
h
FE
–
(I = 2.5 Adc, V
= 10 Vdc)
= 10 Vdc)
10
3.0
–
–
75
–
C
CE
CE
(I = 5.0 Adc, V
C
Collector–Emitter Saturation Voltage
(I = 2.5 Adc, I = 500 mAdc)
V
Vdc
Vdc
CE(sat)
–
–
–
–
1.0
5.0
C
B
(I = 5.0 Adc, I = 2.0 Adc)
C
B
Base–Emitter Saturation Voltage
(I = 2.5 Adc, I = 500 mAdc)
V
BE(sat)
–
–
–
–
1.5
2.5
C
C
B
B
(I = 5.0 Adc, I = 2.0 Adc)
DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product
f
5.0
–
–
–
–
MHz
pF
T
(I = 250 mAdc, V
C
= 10 Vdc, f = 1.0 MHz)
CE
Output Capacitance
C
150
ob
(V
CB
= 10 Vdc, I = 0, f = 100 kHz)
E
SWITCHING CHARACTERISTICS
Rise Time
t
–
–
–
0.4
1.4
1.0
2.5
1.0
µs
µs
µs
r
(V
CC
= 125 Vdc, I = 2.5 Adc, I = 0.5 Adc)
B1
C
Storage Time
(V = 125 Vdc, I = 2.5 Adc, V = 5.0 Vdc, I = I = 0.5 Adc)
BE B1 B2
t
s
CC
Fall Time
(V = 125 Vdc, I = 2.5 Adc, I = I = 0.5 Adc)
C
t
0.45
f
CC B1 B2
C
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
V
CC
+ 125 V
1.0
0.7
0.5
V
CC
I /I = 5.0
= 125 V
25 µs
C B
R
C
[ 50
T = 25°C
J
+ 11 V
0
0.3
0.2
SCOPE
R
B
[ 20
t
r
0.1
- 9.0 V
D
1
0.07
0.05
t , t v 10 ns
r f
DUTY CYCLE = 1.0%
- 5.0 V
0.03
0.02
t @ V
d BE(off)
= 5.0 V
R
AND R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
B
D MUST BE FAST RECOVERY TYPE, e.g.:
1
ą1N5825 USED ABOVE I [ 100 mA
B
0.01
0.05 0.07 0.1
ąMSD6100 USED BELOW I [ 100 mA
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0
B
I , COLLECTOR CURRENT (AMP)
C
Figure 1. Switching Time Test Circuit
Figure 2. Turn–On Time
http://onsemi.com
2
2N6497
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
(pk)
0.05
0.02
0.1
0.07
0.05
R
= 1.56°C/W
θJC(max)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
SINGLE
PULSE
READ TIME AT t
1
0.03
0.02
t
2
SINGLE PULSE
T
- T = P
R
J(pk)
C
(pk) θJC(t)
0.01
DUTY CYCLE, D = t /t
1 2
0.01
0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200 300 500
1000
t, TIME OR PULSE WIDTH (ms)
Figure 3. Thermal Response
20
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
10
breakdown. Safe operating area curves indicate I – V
C
CE
5.0
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
dc
5.0 ms
1.0 ms
100 µs
2.0
1.0
0.5
The data of Figure 4 is based on T = 25_C; T
is
T
= 25°C
C
J(pk)
C
variable depending on power level. Second breakdown
BONDING WIRE LIMITED
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
0.2
0.1
pulse limits are valid for duty cycles to 10% provided T
J(pk)
may be calculated from the data in
v 150_C. T
J(pk)
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltage shown on
Figure 4 may be found at any case temperature by using the
appropriate curve on Figure 6.
0.05 CURVES APPLY BELOW RATED V
CEO
0.02
5.0 7.0 10
V
20 30
50 70 100
200 300 500
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 4. Active–Region Safe Operating Area
100
10
7.0
V
= 125 V
CC
I /I = 5.0
t
s
5.0
C B
SECOND BREAKDOWN DERATING
80
T = 25°C
J
3.0
2.0
60
1.0
THERMAL DERATING
40
0.7
0.5
0.3
0.2
t
f
20
0
0.1
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0
0
20
40
60
80
100
120
140
160
T , CASE TEMPERATURE (°C)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 5. Turn–Off Time
Figure 6. Power Derating
http://onsemi.com
3
2N6497
100
70
4.0
T = 150°C
J
T = 25°C
J
V
CE
= 10 V
3.2
2.4
1.6
0.8
50
30
20
25°C
-ā55°C
I
C
= 1.0 A
2.0 A
3.0 A
0.5
5.0 A
10
7.0
5.0
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0
0.01 0.02
0.05 0.1 0.2
1.0 2.0
5.0 10
I , COLLECTOR CURRENT (AMP)
C
I , BASE CURRENT (mA)
B
Figure 7. DC Current Gain
Figure 8. Collector Saturation Region
1.4
+ā4.0
T = 25°C
J
h
FEĂ
@ĂV
+Ă 10ĂV
CEĂ
3
1.2
1.0
0.8
*APPLIES FOR I /I
C B
v
+ā3.0
+ā2.0
+ā1.0
V
@ I /I = 5.0
C B
BE(sat)
*θ for V
VC CE(sat)
25°C to 150°C
V
BE
@ V = 10 V
CE
0
0.6
0.4
-ā55°C to 25°C
25°C to 150°C
-ā1.0
θ
for V
BE
VB
-ā2.0
-ā3.0
0.2
0
V
@ I /I = 5.0
C B
CE(sat)
-ā55 to 25°C
I /I = 2.5
C B
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
4
10
1000
700
500
V
CE
= 200 V
C
ib
3
2
1
0
10
300
200
T = 150°C
J
10
10
10
T = 25°C
J
100°C
100
70
50
C
ob
30
20
-1
10
10
25°C
REVERSE
FORWARD
+ā0.4
, BASE-EMITTER VOLTAGE (VOLTS)
-2
-ā0.1
10
-ā0.2
0
+ā0.2
+ā0.6
0.4 0.6 1.0 2.0 4.0 6.0 10
20
40 60 100 200 400
V , REVERSE VOLTAGE (VOLTS)
R
V
BE
Figure 11. Collector Cutoff Region
Figure 12. Capacitance
http://onsemi.com
4
2N6497
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
1
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
2
3
U
H
G
H
J
K
L
L
R
J
N
Q
R
S
T
V
G
D
STYLE 1:
U
V
Z
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
N
0.080
2.04
http://onsemi.com
5
2N6497
Notes
http://onsemi.com
6
2N6497
Notes
http://onsemi.com
7
2N6497
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
2N6497/D
相关型号：
2N6498DWDW
TRANSISTOR 5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN, BIP General Purpose Power
ONSEMI
2N6498LEADFREE
Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
CENTRAL
2N6498U
Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
2N6498W
Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
©2020 ICPDF网 联系我们和版权申明