2N6499 [ISC]
isc Silicon NPN Power Transistors; ISC的硅NPN功率晶体管
| 型号： | 2N6499 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistors |
| 文件： | 总2页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2N6497/6498/6499
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V(Min)- 2N6497
= 300V(Min)- 2N6498
= 350V(Min)- 2N6499
·DC Current Gain-
: hFE= 10-75@IC= 2.5A
APPLICATIONS
·Designed for high voltage inverters, switching regulators
and line operated amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
350
400
450
250
300
350
6
UNIT
2N6497
2N6498
2N6499
2N6497
2N6498
2N6499
VCBO
Collector-Base Voltage
V
VCEO
Collector-Emitter Voltge
Emitter-Base Voltage
V
VEBO
IC
ICM
IB
V
A
Collector Current-Continuous
Collector Current-Peak
Base Current
5
10
A
2
A
PD
Tj
Total Power Dissipation@TC=25℃
Junction Temperature
Storage Temperature
80
W
℃
℃
150
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Thermal Rresistance,Junction to Case
1.56 ℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2N6497/6498/6499
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
250
300
350
MAX
UNIT
2N6497
2N6498
2N6499
2N6497
2N6498
2N6499
Collector-Emitter
Sustaining Voltage
VCEO(SUS)
IC= 25mA; IB= 0
V
1.0
1.25
1.5
Collector-Emitter
Saturation Voltage
IC= 2.5A; IB= 0.5A
V
VCE
(sat)-1
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
2N6497
IC= 5A; IB= 2A
IC= 2.5A; IB= 0.5A
IC= 5A; IB= 2A
5.0
V
V
V
VCE
VBE
VBE
(sat)-2
(sat)-1
(sat)-2
1.5
2.5
VCE= 350V;VBE( )= 1.5V
1.0
10
off
CE= 175V;VBE( )= 1.5V ;TC=100℃
off
VCE= 400V;VBE( )= 1.5V
Collector
Cutoff Current
1.0
10
off
2N498
ICEX
mA
mA
VCE= 200V;VBE( )= 1.5V ;TC=100℃
off
VCE= 450V;VBE( )= 1.5V
1.0
10
off
2N6499
Emitter Cutoff Current
VCE= 225V;VBE( )= 1.5V ;TC=100℃
off
IEBO
hFE-1
hFE-2
fT
VEB= 6V; IC= 0
1.0
75
DC Current Gain
IC= 2.5A ; VCE= 10V
IC= 5A ; VCE= 10V
10
3
DC Current Gain
Current-Gain—Bandwidth Product
5
MHz
IC= 0.25A;VCE= 10V;ftest=1.0MHz
Switching Times;Duty Cycle≤2%
Rise Time
Storage Time
Fall Time
1.0
2.5
1.0
μs
μs
μs
tr
tS
tf
VCC= 125V,tp= 0.1ms
IC=2.5A;IB1= -IB2=0.5 A
isc Website：www.iscsemi.cn
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