2N5655G [ONSEMI]
Plastic NPN Silicon High−Voltage Power Transistor; 塑料NPN硅高电压功率晶体管
| 型号： | 2N5655G |
| 厂家： | 
ONSEMI |
| 描述： | Plastic NPN Silicon High−Voltage Power Transistor |
| 文件： | 总5页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5655, 2N5657
Plastic NPN Silicon
High−Voltage Power
Transistor
These devices are designed for use in line−operated equipment such
as audio output amplifiers; low−current, high−voltage converters; and
AC line relays.
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0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
Features
• Excellent DC Current Gain −
h
= 30−250 @ I = 100 mAdc
C
FE
250−350 VOLTS, 20 WATTS
• Current−Gain − Bandwidth Product −
f = 10 MHz (Min) @ I = 50 mAdc
T
C
• Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Symbol 2N5655 2N5657 Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
250
275
350
375
Vdc
Vdc
Vdc
Adc
TO−225AA
CASE 77−09
STYLE 1
CEO
V
CB
EB
V
6.0
Collector Current −
Continuous
Peak
I
0.5
1.0
C
MARKING DIAGRAM
Base Current
I
1.0
Adc
B
Total Device Dissipation @ T = 25°C
P
20
0.16
W
W/°C
C
D
Derate above 25°C
YWW
2
N565xG
Operating and Storage Junction
Temperature Range
T , T
–65 to +150
°C/W
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Y
WW
= Year
= Work Week
Thermal Resistance,
Junction−to−Case
q
6.25
°C/W
JC
2N565x = Device Code
x = 5 or 7
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data.
= Pb−Free Package
ORDERING INFORMATION
Shipping
Device
2N5655
Package
TO−225
500 Units / Bulk
500 Units / Bulk
2N5655G
TO−225
(Pb−Free)
2N5657
TO−225
500 Units / Bulk
500 Units / Bulk
2N5657G
TO−225
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
October, 2006 − Rev. 9
2N5655/D
2N5655, 2N5657
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted) (Note 2)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
2N5655
2N5657
V
250
350
−
−
Vdc
Vdc
CEO(sus)
(I = 100 mAdc (inductive), L = 50 mH)
C
Collector−Emitter Breakdown Voltage
2N5655
2N5657
V
250
350
−
−
(BR)CEO
(I = 1.0 mAdc, I = 0)
C
B
Collector Cutoff Current
(V = 150 Vdc, I = 0)
I
mAdc
CEO
2N5655
2N5657
CE
B
−
−
0.1
0.1
(V = 250 Vdc, I = 0)
CE
B
Collector Cutoff Current
I
mAdc
CEX
(V = 250 Vdc, V
= 1.5 Vdc)
= 1.5 Vdc)
2N5655
2N5657
2N5655
2N5657
CE
EB(off)
EB(off)
EB(off)
EB(off)
−
−
−
−
0.1
0.1
1.0
1.0
(V = 350 Vdc, V
CE
(V = 150 Vdc, V
= 1.5 Vdc, T = 100_C)
CE
C
(V = 250 Vdc, V
= 1.5 Vdc, T = 100_C)
CE
C
Collector Cutoff Current
(V = 275 Vdc, I = 0)
I
I
mAdc
CBO
2N5655
2N5657
CB
E
−
−
10
10
(V = 375 Vdc, I = 0)
CB
E
Emitter Cutoff Current (V = 6.0 Vdc, I = 0)
−
10
mAdc
EB
C
EBO
ON CHARACTERISTICS
DC Current Gain (Note 3)
h
FE
−
(I = 50 mAdc, V = 10 Vdc)
C
CE
25
30
15
5.0
−
250
−
(I = 100 mAdc, V = 10 Vdc)
C
CE
(I = 250 mAdc, V = 10 Vdc)
C
CE
(I = 500 mAdc, V = 10 Vdc)
C
CE
−
Collector−Emitter Saturation Voltage (Note 3)
(I = 100 mAdc, I = 10 mAdc)
V
Vdc
Vdc
CE(sat)
C
B
−
−
−
1.0
2.5
10
(I = 250 mAdc, I = 25 mAdc)
C
B
(I = 500 mAdc, I = 100 mAdc)
C
B
Base−Emitter Voltage (I = 100 mAdc, V = 10 Vdc) (Note 3)
V
C
−
1.0
C
CE
BE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (I = 50 mAdc, V = 10 Vdc, f = 10 MHz) (Note 4)
f
10
−
−
25
−
MHz
pF
−
C
CE
T
Output Capacitance (V = 10 Vdc, I = 0, f = 100 kHz)
CB
E
ob
Small−Signal Current Gain (I = 100 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
fe
20
C
CE
2. Indicates JEDEC registered data for 2N5655 Series.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f is defined as the frequency at which |h | extrapolates to unity.
T
fe
40
30
20
50 mH
X
200
TO SCOPE
Y
H
RELAY
g
+
+
6.0 V
50 V
10
0
−
300
1.0
25
50
75
100
125
150
T , CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
Figure 2. Sustaining Voltage Test Circuit
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.
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2
2N5655, 2N5657
1.0
0.5
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I − V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
10 ms
500 ms
1.0 ms
C
CE
T = 150°C
J
0.2
0.1
d-
c
The data of Figure 3 is based on T
variable depending on conditions. Second breakdown pulse
= 150_C; T is
J(pk)
C
Second Breakdown Limit
Thermal Limit @ T = 25°C
Bonding Wire Limit
C
limits are valid for duty cycles to 10% provided T
0.05
0.02
J(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
Curves apply below rated V
CEO
2N5655
2N5657
0.01
20
30 40
60
100
200 300 400
600
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 3. Active−Region Safe Operating Area
300
200
V
V
= 10 V
= 2.0 V
CE
CE
T = +150°C
J
100
70
+100°C
+25°C
50
30
20
−ꢀ55°C
10
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
500
I , COLLECTOR CURRENT (mA)
C
Figure 4. Current Gain
1.0
0.8
0.6
0.4
0.2
0
V
@ I /I = 10
C B
BE(sat)
V
@ V = 10 V
CE
BE
V
@ I /I = 10
C B
CE(sat)
T = +25°C
J
I /I = 5.0
C B
10
20 30
50
100
200 300
500
I , COLLECTOR CURRENT (mA)
C
Figure 5. “On” Voltages
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3
2N5655, 2N5657
300
200
T = +25°C
J
C
ib
100
70
50
30
20
C
ob
10
0.1 0.2
0.5
1.0 2.0
5.0
10 20
50
100
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Capacitance
10
I /I = 10
C B
t
r
5.0
V
= 300 V, V
= 2.0 V
= 0 V
CC
BE(off)
(2N5657, only)
= 100 V, V
2.0
1.0
0.5
V
CC
BE(off)
t
d
0.2
0.1
0.05
0.02
0.01
1.0
2.0
5.0
10
20
50
100 200
500
I , COLLECTOR CURRENT (mA)
C
Figure 7. Turn−On Time
10
I /I = 10
C B
5.0
t
2.0
1.0
0.5
s
t
f
V
= 100 V
CC
V
= 300 V
0.2
0.1
CC
(Type 2N5657, only)
1.0
2.0
5.0
10 20 50
100 200
500
I , COLLECTOR CURRENT (mA)
C
Figure 8. Turn−Off Time
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4
2N5655, 2N5657
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
−B−
F
C
U
Q
M
−A−
INCHES
DIM MIN MAX
MILLIMETERS
1
2 3
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
A
B
C
D
F
0.425
0.295
0.095
0.020
0.115
0.435
0.305
0.105
0.026
0.130
H
K
G
H
J
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
16.63
J
V
K
M
Q
R
S
U
V
TYP
TYP
_
_
G
R
0.148
0.045
0.025
0.145
0.040
0.158
0.065
0.035
0.155
−−−
3.76
1.15
0.64
3.69
1.02
4.01
1.65
0.88
3.93
−−−
M
M
M
B
0.25 (0.010)
A
S
D 2 PL
M
M
M
B
0.25 (0.010)
A
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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2N5655/D
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