2N5656 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N5656 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5655 2N5656 2N5657
DESCRIPTION
·
·With TO-126 package
·High breakdown voltage
APPLICATIONS
·For use in line-operated equipment
such as audio output amplifiers;
low-current ,high-voltage converters;
and AC line relays
PINNING
PIN
DESCRIPTION
Emitter
1
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
250
300
350
275
325
375
6
UNIT
2N5655
2N5656
2N5657
2N5655
2N5656
2N5657
VCBO
Collector-base voltage
Open emitter
V
VCEO
Collector-emitter voltage
Open base
V
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
V
A
0.5
Collector current-Peak
Base current
1.0
A
0.25
20
A
PD
Tj
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
W
℃
℃
150
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
VALUE
UNIT
Rth j-c
6.25
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5655 2N5656 2N5657
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
250
300
350
TYP.
MAX
UNIT
2N5655
2N5656
2N5657
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A; IB=0;L=50mH
V
VCEsat-1
VCEsat-2
VCEsat-3
VBE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Emitter-base on voltage
IC=100mA ;IB=10mA
IC=250mA ;IB=25mA
IC=500mA ;IB=100mA
IC=100mA ; VCE=10V
VCE=150V; IB=0
1.0
2.5
10
V
V
V
V
1.0
2N5655
ICEO
Collector cut-off current
Collector cut-off current
0.1
10
mA
2N5656
2N5657
2N5655
2N5656
2N5657
VCE=200V; IB=0
V
CE=250V; IB=0
VCB=275V; IE=0
VCB=325V; IE=0
VCB=375V; IE=0
ICBO
μA
VCE= Rated VCEO; VBE(off)=1.5V
TC=100℃
0.1
1.0
ICEX
IEBO
hFE-1
hFE-2
hFE-3
hFE-4
fT
Collector cut-off current
Emitter cut-off current
DC current gain
mA
VEB=6V; IC=0
10
μA
IC=50mA ; VCE=10V
IC=100mA ; VCE=10V
IC=250mA ; VCE=10V
IC=500mA ; VCE=10V
IC=50mA ; VCE=10V;f=10MHz
f=100kHz ; VCB=10V;IE=0
25
30
15
5
DC current gain
250
DC current gain
DC current gain
Transition frequency
Output capacitance
10
MHz
pF
COB
25
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5655 2N5656 2N5657
PACKAGE OUTLINE
Fig.2 Outline dimensions
JMnic
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