2N5457G [ONSEMI]
小信号 JFET N 沟道;
| 型号： | 2N5457G |
| 厂家： | 
ONSEMI |
| 描述： | 小信号 JFET N 沟道 开关 小信号场效应晶体管 |
| 文件： | 总4页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5457, 2N5458
2N5457 and 2N5458 are Preferred Devices
JFETs - General Purpose
N–Channel – Depletion
N–Channel Junction Field Effect Transistors, depletion mode (Type
A) designed for audio and switching applications.
http://onsemi.com
• N–Channel for Higher Gain
• Drain and Source Interchangeable
• High AC Input Impedance
1 DRAIN
• High DC Input Resistance
3
GATE
• Low Transfer and Input Capacitance
• Low Cross–Modulation and Intermodulation Distortion
• Unibloc Plastic Encapsulated Package
2 SOURCE
MAXIMUM RATINGS
TO–92
CASE 29
STYLE 5
Rating
Drain–Source Voltage
Drain–Gate Voltage
Symbol
Value
25
Unit
Vdc
1
2
V
DS
3
V
DG
25
Vdc
MARKING DIAGRAMS
Reverse Gate–Source Voltage
Gate Current
V
–25
10
Vdc
GSR
I
G
mAdc
2N
2N
5457
YWW
5458
YWW
Total Device Dissipation
P
D
@ T = 25°C
310
2.82
mW
mW/°C
A
Derate above 25°C
Operating Junction Temperature
T
135
°C
°C
J
Storage Temperature Range
T
stg
–65 to +150
Y
WW
= Year
= Work Week
ORDERING INFORMATION
Device
2N5457
2N5458
Package
TO–92
Shipping
5000 Units/Box
5000 Units/Box
TO–92
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
September, 2001 – Rev. 3
2N5457/D
2N5457, 2N5458
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Min
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
Gate Reverse Current
(I = –10 µAdc, V
= 0)
= 0)
V
(BR)GSS
–25
–25
–
Vdc
G
DS
(V
GS
= –15 Vdc, V
I
–
–
–
–
ā1.0
–200
nAdc
DS
GSS
(V
GS
= –15 Vdc, V
= 0, T = 100°C)
DS
A
Gate–Source Cutoff Voltage
2N5457
2N5458
V
–1.0
–2.0
–
–
–6.0
–7.0
Vdc
Vdc
GS(off)
(V
DS
= 15 Vdc, i = 1 nAdc)
D
Gate–Source Voltage
V
GS
–
–
–2.5
–3.5
–6.0
–7.0
(V
DS
(V
DS
= 15 Vdc, i = 100 µAdc)
2N5457
2N5458
D
= 15 Vdc, i = 200 µAdc)
D
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (Note 1.)
(V = 20 Vdc, V = 0)
2N5638
2N5639
I
1.0
2.0
3.0
6.0
5.0
9.0
mAdc
DSS
DS
GS
DYNAMIC CHARACTERISTICS
Forward Transfer Admittance (Note 1.)
2N5638
2N5639
|Y
|
1000
1500
3000
4000
5000
5500
µmhos
fs
(V
DS
= 15 Vdc, V
= 0, f = 1 kHz)
GS
Forward Transfer Admittance (Note 1.)
Input Capacitance
(V
DS
(V
DS
(V
DS
= 15 Vdc, V
= 15 Vdc, V
= 15 Vdc, V
= 0, f = 1 kHz)
= 0, f = 1 kHz)
= 0, f = 1 kHz)
|Y
os
|
–
–
–
10
4.5
1.5
50
7.0
3.0
µmhos
pF
GS
GS
GS
C
iss
rss
Reverse Transfer Capacitance
C
pF
1. Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%.
14
12
10
8
V
V
= 15 V
= 0
f = 1 kHz
DS
GS
6
4
2
0
10
0.001
0.01
0.1
1.0
R , SOURCE RESISTANCE (Megohms)
S
Figure 1. Noise Figure versus Source Resistance
1.2
1.0
1.2
V
^ -1.2 V
V
^ -1.2 V
GS(off)
V
= 0 V
GS(off)
GS
1.0
0.8
0.6
0.4
0.2
0
-ā0.2 V
0.8
0.6
0.4
V
DS
= 15 V
-ā0.4 V
-ā0.6 V
0.2
0
-ā0.8 V
-ā1.0 V
25
0
5
10
15
20
-ā1.2
-ā0.8
-ā0.4
0
V , DRAINā-āSOURCE VOLTAGE (VOLTS)
DS
V , GATEā-āSOURCE VOLTAGE (VOLTS)
GS
Figure 2. Typical Drain Characteristics
Figure 3. Common Source Transfer Characteristics
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2
2N5457, 2N5458
5
5
4
3
2
1
0
V
= 0 V
GS
V
^ -ā3.5 V
GS(off)
4
3
2
1
0
V
^ -ā3.5 V
GS(off)
-ā1 V
V
DS
= 15 V
-ā2 V
-ā3 V
-ā3
-ā2
-ā1
0
0
5
10
15
20
25
-ā5
-ā4
V , DRAINā-āSOURCE VOLTAGE (VOLTS)
DS
V , GATEā-āSOURCE VOLTAGE (VOLTS)
GS
Figure 4. Typical Drain Characteristics
Figure 5. Common Source Transfer
Characteristics
10
8
10
8
V
^ -ā5.8 V
GS(off)
V
= 0 V
GS
V
^ -ā5.8 V
GS(off)
-ā1 V
6
6
4
V
DS
= 15 V
-ā2 V
-ā3 V
4
2
0
2
0
-ā4 V
-ā5 V
0
5
10
15
20
25
-ā7
-ā6
-ā5
-ā4
-ā3
-ā2
-ā1
0
V , DRAINā-āSOURCE VOLTAGE (VOLTS)
DS
V , GATEā-āSOURCE VOLTAGE (VOLTS)
GS
Figure 6. Typical Drain Characteristics
Figure 7. Common Source Transfer
Characteristics
NOTE: Note: Graphical data is presented for dc conditions. Tabular data is given
for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under
dc conditions, self heating in higher I
units reduces I .
DSS
DSS
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3
2N5457, 2N5458
PACKAGE DIMENSIONS
TO–92 (TO–226)
CASE 29–11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
---
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.021
0.055
0.105
0.020
---
D
X X
G
J
H
V
K
L
---
---
C
N
P
R
V
0.105
0.100
---
2.66
2.54
---
SECTION X–X
0.115
0.135
2.93
3.43
1
N
---
---
N
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
2N5457/D
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