2N5457RL1 [ONSEMI]
25V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, CASE 29-11, 3 PIN;
| 型号： | 2N5457RL1 |
| 厂家： | 
ONSEMI |
| 描述： | 25V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, CASE 29-11, 3 PIN |
| 文件： | 总3页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5457, 2N5458
2N5457 and 2N5458 are Preferred Devices
JFETs - General Purpose
N–Channel – Depletion
N–Channel Junction Field Effect Transistors, depletion mode (Type
A) designed for audio and switching applications.
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• N–Channel for Higher Gain
• Drain and Source Interchangeable
• High AC Input Impedance
1 DRAIN
• High DC Input Resistance
3
• Low Transfer and Input Capacitance
• Low Cross–Modulation and Intermodulation Distortion
• Unibloc Plastic Encapsulated Package
GATE
2 SOURCE
MAXIMUM RATINGS
TO–92
CASE 29
STYLE 5
Rating
Drain–Source Voltage
Drain–Gate Voltage
Symbol
Value
25
Unit
Vdc
1
2
V
DS
DG
3
V
25
Vdc
MARKING DIAGRAMS
Reverse Gate–Source Voltage
Gate Current
V
–25
10
Vdc
GSR
I
G
mAdc
2N
2N
5457
YWW
5458
YWW
Total Device Dissipation
P
D
@ T = 25°C
310
mW
A
Derate above 25°C
2.82
mW/°C
Operating Junction Temperature
T
135
°C
°C
J
Storage Temperature Range
T
stg
–65 to +150
Y
WW
= Year
= Work Week
ORDERING INFORMATION
Device
2N5457
2N5458
Package
TO–92
Shipping
5000 Units/Box
5000 Units/Box
TO–92
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2001
69
Publication Order Number:
September, 2001 – Rev. 3
2N5638/D
2N5457, 2N5458
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Min
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
Gate Reverse Current
(I = –10 µAdc, V = 0)
V
(BR)GSS
–25
–25
–
Vdc
G
DS
(V = –15 Vdc, V = 0)
I
GSS
–
–
–
–
ā1.0
–200
nAdc
GS
DS
(V = –15 Vdc, V = 0, T = 100°C)
GS
DS
A
Gate–Source Cutoff Voltage
2N5457
2N5458
V
–1.0
–2.0
–
–
–6.0
–7.0
Vdc
Vdc
GS(off)
(V = 15 Vdc, i = 1 nAdc)
DS
D
Gate–Source Voltage
(V = 15 Vdc, i = 100 µAdc)
V
GS
–
–
–2.5
–3.5
–6.0
–7.0
2N5457
2N5458
DS
D
(V = 15 Vdc, i = 200 µAdc)
DS
D
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (Note 1.)
2N5638
2N5639
I
1.0
2.0
3.0
6.0
5.0
9.0
mAdc
DSS
(V = 20 Vdc, V = 0)
DS
GS
DYNAMIC CHARACTERISTICS
Forward Transfer Admittance (Note 1.)
2N5638
2N5639
|Y |
fs
1000
1500
3000
4000
5000
5500
µmhos
(V = 15 Vdc, V = 0, f = 1 kHz)
DS
GS
Forward Transfer Admittance (Note 1.)
Input Capacitance
(V = 15 Vdc, V = 0, f = 1 kHz)
|Y |
os
–
–
–
10
4.5
1.5
50
7.0
3.0
µmhos
pF
DS
GS
(V = 15 Vdc, V = 0, f = 1 kHz)
C
iss
DS
GS
Reverse Transfer Capacitance
(V = 15 Vdc, V = 0, f = 1 kHz)
C
rss
pF
DS
GS
1. Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%.
14
12
10
8
V
= 15 V
= 0
f = 1 kHz
DS
V
GS
6
4
2
0
10
0.001
0.01
0.1
1.0
R , SOURCE RESISTANCE (Megohms)
S
Figure 1. Noise Figure versus Source Resistance
1.2
1.0
1.2
V
GS(off)
^ -1.2 V
V
GS(off)
^ -1.2 V
V
= 0 V
GS
1.0
0.8
0.6
0.4
0.2
0
-ā0.2 V
0.8
0.6
0.4
V
DS
= 15 V
-ā0.4 V
-ā0.6 V
0.2
0
-ā0.8 V
-ā1.0 V
25
0
5
10
15
20
-ā1.2
-ā0.8
V , GATEā-āSOURCE VOLTAGE (VOLTS)
GS
-ā0.4
0
V
DS
, DRAINā-āSOURCE VOLTAGE (VOLTS)
Figure 2. Typical Drain Characteristics
Figure 3. Common Source Transfer Characteristics
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70
2N5457, 2N5458
5
5
4
3
2
1
0
V
= 0 V
GS
V
GS(off)
^ -ā3.5 V
4
3
2
1
0
V
^ -ā3.5 V
GS(off)
-ā1 V
V
DS
= 15 V
-ā2 V
-ā3 V
-ā3
V , GATEā-āSOURCE VOLTAGE (VOLTS)
GS
-ā2
-ā1
0
0
5
10
15
20
25
-ā5
-ā4
V
DS
, DRAINā-āSOURCE VOLTAGE (VOLTS)
Figure 4. Typical Drain Characteristics
Figure 5. Common Source Transfer
Characteristics
10
8
10
8
V
GS(off)
^ -ā5.8 V
V
GS
= 0 V
V
GS(off)
^ -ā5.8 V
-ā1 V
6
6
4
V
DS
= 15 V
-ā2 V
-ā3 V
4
2
0
2
0
-ā4 V
-ā5 V
0
5
10
15
20
25
-ā7
-ā6
-ā5
-ā4
-ā3
-ā2
-ā1
0
V
DS
, DRAINā-āSOURCE VOLTAGE (VOLTS)
V , GATEā-āSOURCE VOLTAGE (VOLTS)
GS
Figure 6. Typical Drain Characteristics
Figure 7. Common Source Transfer
Characteristics
NOTE: Note: Graphical data is presented for dc conditions. Tabular data is given
for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under
dc conditions, self heating in higher I
units reduces I
.
DSS
DSS
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71
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