2N5190 [ONSEMI]
4.0 A, 40 V NPN Bipolar Power Transistor;
| 型号： | 2N5190 |
| 厂家： | 
ONSEMI |
| 描述： | 4.0 A, 40 V NPN Bipolar Power Transistor 局域网 开关 晶体管 功率双极晶体管 |
| 文件： | 总6页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5190G, 2N5191G,
2N5192G
Silicon NPN Power
Transistors
Silicon NPN power transistors are for use in power amplifier and
switching circuits, − excellent safe area limits. Complement to PNP
2N5194, 2N5195.
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4.0 AMPERES
NPN SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS − 40 WATTS
Features
• Epoxy Meets UL 94 V−0 @ 0.125 in.
• These Devices are Pb−Free and are RoHS Compliant*
COLLECTOR
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N5190G
2N5191G
V
V
V
Vdc
CEO
CBO
EBO
3
40
60
80
BASE
2N5192G
1
Collector−Base Voltage
2N5190G
2N5191G
Vdc
EMITTER
40
60
80
2N5192G
Emitter−Base Voltage
Collector Current
5.0
4.0
1.0
Vdc
Adc
Adc
I
C
TO−225
CASE 77
STYLE 1
Base Current
I
B
Total Device Dissipation
P
D
@ T = 25°C
40
320
W
mW/°C
C
1
2
3
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
–65 to +150
°C
J
stg
MARKING DIAGRAM
ESD − Human Body Model
ESD − Machine Model
HBM
MM
3B
C
V
V
YWW
2
N519xG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Y
WW
=
=
Year
Work Week
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
2N519x = Device Code
x = 0, 1, or 2
G
Thermal Resistance, Junction−to−Case
R
3.12
°C/W
q
JC
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
2N5190G
TO−225
500 Units/Box
(Pb−Free)
2N5191G
2N5192G
TO−225
(Pb−Free)
500 Units/Box
500 Units/Box
TO−225
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
October, 2013 − Rev. 14
2N5191/D
2N5190G, 2N5191G, 2N5192G
ELECTRICAL CHARACTERISTICS* (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
V
Vdc
CEO(sus)
(I = 0.1 Adc, I = 0)
2N5190G
2N5191G
2N5192G
C
B
40
60
80
−
−
−
Collector Cutoff Current
I
mAdc
mAdc
CEO
(V = 40 Vdc, I = 0)
CE
B
2N5190G
−
−
−
1.0
1.0
1.0
(V = 60 Vdc, I = 0)
CE
B
2N5191G
(V = 80 Vdc, I = 0)
CE
B
2N5192G
Collector Cutoff Current
I
CEX
(V = 40 Vdc, V
2N5190G
= 1.5 Vdc)
= 1.5 Vdc)
= 1.5 Vdc)
CE
EB(off)
EB(off)
EB(off)
EB(off)
EB(off)
EB(off)
−
−
−
−
−
−
0.1
0.1
0.1
2.0
2.0
2.0
(V = 60 Vdc, V
CE
2N5191G
(V = 80 Vdc, V
CE
2N5192G
(V = 40 Vdc, V
= 1.5 Vdc, T = 125_C)
= 1.5 Vdc, T = 125_C)
= 1.5 Vdc, T = 125_C)
CE
C
2N5190G
(V = 60 Vdc, V
CE
C
2N5191G
(V = 80 Vdc, V
CE
C
2N5192G
Collector Cutoff Current
I
mAdc
CBO
(V = 40 Vdc, I = 0)
2N5190G
CB
E
−
−
−
0.1
0.1
0.1
(V = 60 Vdc, I = 0)
CB
E
2N5191G
(V = 80 Vdc, I = 0)
CB
E
2N5192G
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
mAdc
−
EBO
−
1.0
BE
C
ON CHARACTERISTICS (Note 1)
DC Current Gain
h
FE
(I = 1.5 Adc, V = 2.0 Vdc)
2N5190G/2N5191G
2N5192G
C
CE
25
20
100
80
(I = 4.0 Adc, V = 2.0 Vdc)
2N5190G/2N5191G
2N5192G
C
CE
10
7.0
−
−
Collector−Emitter Saturation Voltage
V
Vdc
Vdc
CE(sat)
(I = 1.5 Adc, I = 0.15 Adc)
C
B
−
−
0.6
1.4
(I = 4.0 Adc, I = 1.0 Adc)
C
B
Base−Emitter On Voltage
(I = 1.5 Adc, V = 2.0 Vdc)
V
BE(on)
−
1.2
−
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
f
T
MHz
(I = 1.0 Adc, V = 10 Vdc, f = 1.0 MHz)
2.0
C
CE
*JEDEC Registered Data.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
2N5190G, 2N5191G, 2N5192G
10
7.0
5.0
T = 150°C
J
V
V
= 2.0 V
= 10 V
CE
CE
3.0
2.0
1.0
0.7
0.5
-ꢀ55°C
25°C
0.3
0.2
0.1
0.004
0.007 0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0 4.0
I , COLLECTOR CURRENT (AMP)
C
Figure 1. DC Current Gain
2.0
1.6
1.2
0.8
T = 25°C
J
I = 10 mA
C
100 mA
1.0 A
3.0 A
0.4
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200 300
500
I , BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
2.0
1.6
1.2
0.8
0.4
0
+ꢀ2.5
+ꢀ2.0
h
FEꢁ
@ꢁV
+ꢁ 2.0ꢁV
CEꢁ
T = 25°C
J
*APPLIES FOR I /I ≤
C B
2
+ꢀ1.5
+ꢀ1.0
T = -ꢀ65°C to +150°C
J
+ꢀ0.5
0
*q for V
V
CE(sat)
-ꢀ0.5
-ꢀ1.0
-ꢀ1.5
-ꢀ2.0
-ꢀ2.5
V
@ I /I = 10
C B
BE(sat)
V
@ V = 2.0 V
CE
BE
q for V
V
BE
V
@ I /I = 10
C B
CE(sat)
0.005 0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1.0 2.0 3.0 4.0
0.005 0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1.0 2.0 3.0 4.0
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 3. “On” Voltages
Figure 4. Temperature Coefficients
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3
2N5190G, 2N5191G, 2N5192G
3
2
1
7
10
10
10
10
V
CE
= 30 V
V
= 30 V
CE
I = 10 x I
C
CES
6
10
T = 150°C
J
I
C
≈ I
CES
5
4
3
2
10
10
10
10
0
100°C
10
I = 2 x I
C
CES
FORWARD
REVERSE
-1
10
-ꢀ2
(TYPICAL I VALUES
CES
OBTAINED FROM FIGURE 5)
10
10
25°C
I
CES
-ꢀ3
-ꢀ0.4 -ꢀ0.3 -ꢀ0.2 -ꢀ0.1
0
+ꢀ0.1 +ꢀ0.2 +ꢀ0.3 +ꢀ0.4 +ꢀ0.5 +ꢀ0.6
20
40
60
80
100
120
140
160
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Effects of Base−Emitter Resistance
Figure 5. Collector Cut−Off Region
300
200
V
CC
TURN-ON PULSE
APPROX
+11 V
R
T = +ꢀ25°C
J
C
V
in
SCOPE
R
B
C ꢁ<<ꢁC
jd
eb
V
in
0
V
EB(off)
t
1
100
70
-ꢀ4.0 V
t
3
C
eb
APPROX
+11 V
R and R varied
B C
to obtain desired
current levels
t ≤ 7.0 ns
1
100 < t < 500 ms
2
t < 15 ns
50
3
C
cb
V
in
DUTY CYCLE ≈ 2.0%
APPROX -ꢀ9.0 V
30
t
2
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30 40
TURN-OFF PULSE
V , REVERSE VOLTAGE (VOLTS)
R
Figure 7. Switching Time Equivalent Test Circuit
Figure 8. Capacitance
2.0
2.0
t ′
s
I /I = 10
C B
1.0
0.7
0.5
1.0
0.7
0.5
T = 25°C
J
t @ V = 30 V
f CC
t @ V = 30 V
r CC
0.3
0.2
0.3
0.2
t @ V = 10 V
f CC
t @ V = 10 V
r CC
I
= I
B1 B2
I /I = 10
0.1
0.1
0.07
0.05
C B
0.07
0.05
t @ V
d
= 2.0 V
EB(off)
t ′ = t - 1/8 t
f
s
s
T = 25°C
J
0.03
0.02
0.05 0.07 0.1
0.03
0.02
0.2 0.3
0.5 0.7 1.0
2.0 3.0 4.0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 4.0
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 9. Turn−On Time
Figure 10. Turn−Off Time
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4
2N5190G, 2N5191G, 2N5192G
10
There are two limitations on the power handling ability of
a transistor; average junction temperature and second
breakdown. Safe operating area curves indicate I − V
100ꢁms
5.0ꢁms
5.0
1.0ꢁms
C
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
T = 150°C
J
2.0
1.0
0.5
dc
The data of Figure 11 is based on T
variable depending on conditions. Second breakdown pulse
= 150_C; T is
J(pk)
C
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT AT T = 25°C
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED V
C
limits are valid for duty cycles to 10% provided T
J(pk)
≤ 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
CEO
0.2
0.1
2N5191
2N5192
20
1.0
2.0
V
5.0
10
50
100
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 11. Rating and Thermal Data
Active−Region Safe Operating Area
1.0
0.7
0.5
D = 0.5
q
= 3.12°C/W — 2N5190-92
JC(max)
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.01
0.03
0.02
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2
0.3 0.5 1.0
2.0
3.0 5.0 10
20
50
100
200
500
1000
t, TIME OR PULSE WIDTH (ms)
Figure 12. Thermal Response
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
A train of periodical power pulses can be represented by
the model shown in Figure A. Using the model and the
device thermal response, the normalized effective transient
thermal resistance of Figure 12 was calculated for various
duty cycles.
t
P
P
P
P
P
To find q (t), multiply the value obtained from Figure 12
JC
by the steady state value q .
JC
Example:
t
1
The 2N5190 is dissipating 50 watts under the following
conditions: t = 0.1 ms, t = 0.5 ms. (D = 0.2).
Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,
1/f
1
p
t
t
1
DUTY CYCLE, D = t f -
1
P
the reading of r(t , D) is 0.27.
1
PEAK PULSE POWER = P
P
The peak rise in function temperature is therefore:
Figure A
DT = r(t) × PP × qJC = 0.27 × 50 × 3.12 = 42.2_C
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5
2N5190G, 2N5191G, 2N5192G
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AB
E
NOTES:
A1
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
Q
A
MILLIMETERS
DIM MIN
MAX
3.00
1.50
0.90
0.88
0.63
11.10
7.80
2.54
16.63
2.54
3.30
4.20
A
A1
b
2.40
1.00
0.60
0.51
0.39
10.60
7.40
2.04
14.50
1.27
2.90
3.80
D
P
b2
c
1
2
3
D
E
e
L
L1
P
L1
Q
L
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
2X b2
e
2X
c
b
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2N5191/D
相关型号：
2N5190LEADFREE
Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
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