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2N5191 [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2N5191
型号： 2N5191
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 局域网
文件： 总3页 (文件大小：119K)
中文：  中文翻译
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Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5190 2N5191 2N5192  
DESCRIPTION  
·
·With TO-126 package  
·Complement to type 2N5193/5194/5195  
·Excellent safe operating area  
APPLICATIONS  
·For use in medium power linear and  
switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maxm ratings(Ta=25℃)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2N5190  
2N5191  
2N5192  
2N5190  
2N5191  
2N5192  
40  
VCBO  
Collector-base voltage  
Open emitter  
V
60  
80  
40  
VCEO  
Collector-emitter voltage  
Open base  
V
60  
80  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
5
V
A
4
Collector current-Peak  
Base current  
7
1
A
A
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25℃  
40  
W
℃
℃
150  
Tstg  
-65~150  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
3.12  
℃/W  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5190 2N5191 2N5192  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
40  
TYP.  
MAX  
UNIT  
2N5190  
2N5191  
2N5192  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
IC=0.1A; IB=0  
V
60  
80  
VCEsat-1  
VCEsat-2  
VBE  
Collector-emitter saturation voltage IC=1.5A ;IB=0.15A  
Collector-emitter saturation voltage IC=4A ;IB=1A  
0.6  
1.4  
1.2  
V
V
V
Base-emitter on voltage  
IC=1.5A ; VCE=2V  
VCE=40V; IB=0  
VCE=60V; IB=0  
2N5190  
2N5191  
2N5192  
2N5190  
2N5191  
2N5192  
2N5190  
2N5191  
2N5192  
ICEO  
Collector cut-off current  
1.0  
0.1  
mA  
mA  
V
CE=80V; IB=0  
VCB=40V; IE=0  
VCB=60V; IE=0  
VCB=80V; IE=0  
ICBO  
Collector cut-off current  
VCE=40V; VBE(off)=1.5V  
TC=125℃  
VCE=60V; VBE(off)=1.5V  
TC=125℃  
VCE=80V; VBE(off)=1.5V  
TC=125℃  
0.1  
2.0  
0.1  
2.0  
0.1  
2.0  
ICEX  
IEBO  
hFE-1  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
mA  
mA  
VEB=5V; IC=0  
1.0  
100  
80  
2N5190  
2N5191  
2N5192  
2N5190  
2N5191  
2N5192  
25  
20  
10  
IC=1.5A ; VCE=2V  
hFE-2  
DC current gain  
IC=4A ; VCE=2V  
7
2
fT  
Transition frequency  
IC=1A ; VCE=10V;f=1MHz  
MHz  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5190 2N5191 2N5192  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
3

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