2N5088TF [ONSEMI]
Low Noise NPN Bipolar Transistor, TO-92;
| 型号： | 2N5088TF |
| 厂家： | 
ONSEMI |
| 描述： | Low Noise NPN Bipolar Transistor, TO-92 小信号双极晶体管 |
| 文件： | 总6页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
NPN GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The device is designed for low noise, high gain, general
purpose amplifier applications at collector currents from
1µA to 50mA.
1
TO-92
1:EMITTER 2:BASE 3:COLLECTOR
MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
RATING
Collector-Emitter voltage
Collector-Base voltage
Emitter-base voltage
SYMBOL
VCEO
VCBO
VEBO
Ic
2N5088
30
35
2N5089
25
30
UNIT
V
V
V
mA
°C
4.5
100
Collector current-continuous
Operating and Storage
Junction Temperature Range
Tj, Tstg
-55 ~ +150
Note 1: These ratings are based on a maximum junction temperature of 150 degrees C.
Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
Total Device Dissipation
Derate above 25°C
SYMBOL
PD
MAX
625
5
83.3
200
UNIT
mW
mW/°C
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to
Ambient
RθJC
RθJA
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-040,A
UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN
MAX UNIT
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=1.0mA, IB=0
(note)
2N5088
30
25
V
V
2N5089
Collector-Base Breakdown Voltage
2N5088
V(BR)CBO IC=100µA, IE=0
35
30
V
V
2N5089
Collector Cut-Off Current
ICBO
2N5088
VCB=20V, IE=0
VCB=15V, IE=0
IEBO
50
50
nA
nA
2N5089
Emitter Cutoff Current
VEB=3.0V, IC=0
VEB=4.5V, IC=0
50
100
nA
nA
ON CHARACTERISTICS
DC Current Gain
hFE
VCE=5.0V, IC=100µA
2N5088
2N5089
2N5088
2N5089
2N5088
2N5089
300
400
350
450
300
400
900
1200
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
(NOTE)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Small-Signal Current Gain
2N5088
VCE(sat) IC=10mA, IB=1.0mA
VBE(on) IC=10mA, VCE=5.0V
0.5
0.8
V
V
fT
VCE=5.0mA, Ic=500µA, f=20MHz
VCB=5.0V, IE=0, f=100kHz
50
MHz
pF
pF
Ccb
Ceb
hFE
4
10
VEB=0.5V, Ic=0, f=100kHz
VCE=5.0V, Ic=1.0mA, f=1.0kHz
350
450
1400
1800
2N5089
Noise Figure
NF
VCE=5.0V, Ic=100µA, Rs=10kΩ,
f=10KHz to 15.7kHz
2N5088
2N5089
3.0
2.0
dB
dB
Note: Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%.
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-040,A
UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
3
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-040,A
UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
4
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-040,A
UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
5
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-040,A
UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
6
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-040,A
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