2N5064G [ONSEMI]
SILICON CONTROLLED RECTIFIERS 0.8 A RMS, 30 â 200 V; 可控硅整流器0.8 A RMS ， 30 A ???? 200 V
| 型号： | 2N5064G |
| 厂家： | 
ONSEMI |
| 描述： | SILICON CONTROLLED RECTIFIERS 0.8 A RMS, 30 â 200 V |
| 文件： | 总8页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5060 Series
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Annular PNPN devices designed for high volume consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO−92/TO-226AA package which
is readily adaptable for use in automatic insertion equipment.
Features
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SILICON CONTROLLED
RECTIFIERS
0.8 A RMS, 30 − 200 V
• Sensitive Gate Trigger Current − 200 mA Maximum
• Low Reverse and Forward Blocking Current − 50 mA Maximum,
T = 110°C
C
• Low Holding Current − 5 mA Maximum
• Passivated Surface for Reliability and Uniformity
• These are Pb−Free Devices
G
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
V
V
DRM,
RRM
(T = *40 to 110°C, Sine Wave,
V
J
50 to 60 Hz, R = 1 kW)
2N5060
2N5061
2N5062
2N5064
30
60
100
200
GK
MARKING
DIAGRAM
On-State Current RMS (180° Conduction
I
0.8
A
A
T(RMS)
2N
50xx
YWW
Angles; T = 80°C)
C
TO−92
CASE 29
STYLE 10
*Average On-State Current
I
T(AV)
(180° Conduction Angles)
(T = 67°C)
C
0.51
0.255
C
(T = 102°C)
1
2
3
*Peak Non-repetitive Surge Current,
I
10
A
TSM
T = 25°C (1/2 cycle, Sine Wave, 60 Hz)
A
2
2
50xx
Y
WW
Specific Device Code
= Year
= Work Week
Circuit Fusing Considerations (t = 8.3 ms)
*Average On-State Current
I t
0.4
A s
I
A
T(AV)
(180° Conduction Angles)
(T = 67°C)
0.51
0.255
C
(T = 102°C)
C
*Forward Peak Gate Power (Pulse Width v
P
0.1
0.01
1.0
W
W
A
GM
PIN ASSIGNMENT
Cathode
1.0 msec; T = 25°C)
A
1
*Forward Average Gate Power
P
G(AV)
2
3
Gate
(T = 25°C, t = 8.3 ms)
A
Anode
*Forward Peak Gate Current (Pulse Width
I
GM
v 1.0 msec; T = 25°C)
A
*Reverse Peak Gate Voltage (Pulse Width
V
RGM
5.0
V
v 1.0 msec; T = 25°C)
A
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
*Operating Junction Temperature Range
T
−40 to
°C
°C
J
+110
*Storage Temperature Range
T
stg
−40 to
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
and V
for all types can be applied on a continuous basis. Ratings
DRM
RRM
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*Indicates JEDEC Registered Data.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
September, 2011 − Rev. 10
2N5060/D
2N5060 Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
75
Unit
°C/W
°C/W
*Thermal Resistance, Junction−to−Case (Note 2)
Thermal Resistance, Junction−to−Ambient
R
q
JC
R
200
q
JA
2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the
curved surface.
*Indicates JEDEC Registered Data.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current (Note 3)
I
, I
DRM RRM
(V = Rated V
or V
)
T
C
T
C
= 25°C
= 110°C
−
−
−
−
10
50
mA
mA
AK
DRM
RRM
ON CHARACTERISTICS
*Peak Forward On−State Voltage (Note 4)
V
TM
−
−
1.7
V
(I = 1.2 A peak @ T = 25°C)
TM
A
Gate Trigger Current (Continuous DC) (Note 5)
I
mA
GT
*(V = 7.0 Vdc, R = 100 W)
T
C
T
C
= 25°C
= −40°C
−
−
−
−
200
350
AK
L
Gate Trigger Voltage (Continuous DC) (Note 5)
T
C
T
C
= 25°C
= −40°C
V
−
−
−
−
0.8
1.2
V
V
GT
*(V = 7.0 Vdc, R = 100 W)
AK
L
*Gate Non−Trigger Voltage
(V = Rated V , R = 100 W) T = 110°C
V
GD
0.1
−
−
AK
DRM
L
C
Holding Current (Note 3)
T
T
= 25°C
= −40°C
I
−
−
−
−
5.0
10
mA
ms
C
C
H
*(V = 7.0 Vdc, initiating current = 20 mA)
AK
Turn-On Time
Delay Time
Rise Time
t
t
−
−
3.0
0.2
−
−
d
r
(I = 1.0 mA, V = Rated V ,
GT
D
DRM
Forward Current = 1.0 A, di/dt = 6.0 A/ms
Turn-Off Time
t
ms
q
(Forward Current = 1.0 A pulse,
Pulse Width = 50 ms,
0.1% Duty Cycle, di/dt = 6.0 A/ms,
−
−
10
30
−
−
dv/dt = 20 V/ms, I = 1 mA)
2N5060, 2N5061
2N5062, 2N5064
GT
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
dv/dt
−
30
−
V/ms
(Rated V
, Exponential, R = 1 kW)
DRM
GK
*Indicates JEDEC Registered Data.
3. R = 1000 W is included in measurement.
GK
4. Forward current applied for 1 ms maximum duration, duty cycle p 1%.
5. R current is not included in measurement.
GK
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2
2N5060 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
Symbol
Parameter
V
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
DRM
DRM
on state
I
I
H
I
at V
RRM
RRM
V
RRM
RRM
I
V
TM
+ Voltage
I
H
Holding Current
I
at V
DRM
Reverse Blocking Region
(off state)
DRM
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode −
CURRENT DERATING
130
130
110
90
a
a = CONDUCTION ANGLE
a
120
110
100
90
a = CONDUCTION ANGLE
CASE MEASUREMENT
POINT - CENTER OF
FLAT PORTION
TYPICAL PRINTED
CIRCUIT BOARD
MOUNTING
dc
70
80
dc
a = 30°
180°
120°
60°
90°
70
50
30
60
50
90° 120°
0.3
, AVERAGE ON‐STATE CURRENT (AMP)
180°
a = 30°
60°
0
0.1
0.2
0.3
0.4
0.5
0
0.1
0.2
0.4
I
, AVERAGE ON‐STATE CURRENT (AMP)
I
T(AV)
T(AV)
Figure 1. Maximum Case Temperature
Figure 2. Maximum Ambient Temperature
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3
2N5060 Series
CURRENT DERATING
10
5.0
7.0
5.0
3.0
2.0
T = 110°C
J
25°C
3.0
2.0
1.0
0.7
0.5
1.0
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
0.3
0.2
NUMBER OF CYCLES
Figure 4. Maximum Non−Repetitive Surge Current
0.8
0.6
0.4
180°
120°
0.1
0.07
0.05
a
90°
60°
a = CONDUCTION ANGLE
a = 30°
0.03
0.02
dc
0.2
0
0.01
0
0.5
1.0
1.5
2.0
2.5
0
0.1
0.2
0.3
0.4
0.5
v , INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
T
I , AVERAGE ON‐STATE CURRENT (AMP)
T(AV)
Figure 3. Typical Forward Voltage
Figure 5. Power Dissipation
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4
2N5060 Series
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (SECONDS)
Figure 6. Thermal Response
TYPICAL CHARACTERISTICS
0.8
0.7
0.6
0.5
200
V
= 7.0 V
AK
R = 100
V
= 7.0 V
AK
R = 100
100
50
L
L
R
= 1.0 k
GK
2N5062‐64
20
10
5.0
2N5060‐61
2.0
1.0
0.5
0.4
0.3
0.2
−75
-50
-25
0
25
50
75
100 110
-75
-50
-25
0
25
50
75
100 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 8. Typical Gate Trigger Current
Figure 7. Typical Gate Trigger Voltage
4.0
3.0
V
= 7.0 V
AK
R = 100
L
R
= 1.0 k
GK
2.0
2N5060,61
1.0
0.8
2N5062‐64
0.6
0.4
-75
-50
-25
0
25
50
75
100 110
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Typical Holding Current
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5
2N5060 Series
ORDERING INFORMATION
†
Device
Package
Shipping
2N5060G
TO−92
(Pb−Free)
5000 Units / Box
2N5060RLRA
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
2N5060RLRAG
TO−92
(Pb−Free)
2N5060RLRMG
2N5061G
TO−92
2000 / Ammo Pack
5000 Units / Box
2000 / Tape & Reel
5000 Units / Box
2000 / Tape & Reel
2000 / Ammo Pack
2000 / Tape & Reel
5000 Units / Box
(Pb−Free)
TO−92
(Pb−Free)
2N5061RLRAG
2N5062G
TO−92
(Pb−Free)
TO−92
(Pb−Free)
2N5062RLRAG
2N5064RLRMG
2N5064RLRAG
2N5064G
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
2N5060 Series
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
STRAIGHT LEAD
BULK PACK
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
---
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.021
0.055
0.105
0.020
---
D
X X
G
J
H
V
K
L
---
---
N
P
R
V
0.105
0.100
---
2.66
2.54
---
C
SECTION X−X
0.115
0.135
2.93
3.43
1
N
---
---
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
A
BENT LEAD
TAPE & REEL
AMMO PACK
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
P
T
MILLIMETERS
SEATING
PLANE
DIM MIN
MAX
5.20
5.33
4.19
0.54
2.80
0.50
---
K
A
B
C
D
G
J
4.45
4.32
3.18
0.40
2.40
0.39
12.70
2.04
1.50
2.93
3.43
D
X X
G
K
N
P
R
V
J
2.66
4.00
---
V
C
---
SECTION X−X
STYLE 10:
1
N
PIN 1. CATHODE
2. GATE
3. ANODE
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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2N5060/D
Mouser Electronics
Authorized Distributor
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ON Semiconductor:
2N5060 2N5060RLRA 2N5060RLRAG 2N5060RLRM 2N5060RLRMG 2N5061 2N5061G 2N5061RLRA
2N5061RLRAG 2N5062 2N5062G 2N5062RLRA 2N5062RLRAG 2N5064 2N5064RLRA 2N5064RLRAG
2N5064RLRM 2N5064RLRMG 2N5060G 2N5064G
相关型号：
2N5064RLRM
Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-92, PLASTIC, TO-226AA, 3 PIN
MOTOROLA
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