2N5064RLRA [MOTOROLA]
0.8A, 200V, SCR, TO-92, PLASTIC, TO-226AA, 3 PIN;型号: | 2N5064RLRA |
厂家: | MOTOROLA |
描述: | 0.8A, 200V, SCR, TO-92, PLASTIC, TO-226AA, 3 PIN 栅 栅极 |
文件: | 总7页 (文件大小:81K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preferred Device
Reverse Blocking Thyristors
Annular PNPN devices designed for high volume consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA (TO-92) package
which is readily adaptable for use in automatic insertion equipment.
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SCRs
• Sensitive Gate Trigger Current — 200 µA Maximum
0.8 AMPERES RMS
30 thru 200 VOLTS
• Low Reverse and Forward Blocking Current — 50 µA Maximum,
T
= 110°C
C
• Low Holding Current — 5 mA Maximum
• Passivated Surface for Reliability and Uniformity
• Device Marking: Device Type, e.g., 2N5060, Date Code
G
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Off–State Voltage
V
Volts
DRM,
(T
J
=
40 to 110°C, Sine Wave,
V
RRM
50 to 60 Hz, Gate Open)
2N5060
2N5061
2N5062
2N5064
30
60
100
200
On-State Current RMS
(180° Conduction Angles; T = 80°C)
I
0.8
Amp
Amp
T(RMS)
1
2
C
3
*Average On-State Current
(180° Conduction Angles)
I
T(AV)
TO–92 (TO–226AA)
CASE 029
(T = 67°C)
(T = 102°C)
C
0.51
0.255
C
STYLE 10
*Peak Non-repetitive Surge Current,
I
10
Amps
TSM
T
= 25°C
A
PIN ASSIGNMENT
Cathode
(1/2 cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
*Forward Peak Gate Power
1
2
3
2
2
I t
0.4
0.1
A s
Gate
P
Watt
Watt
Amp
Volts
°C
GM
Anode
(Pulse Width
1.0 µsec; T = 25°C)
A
*Forward Average Gate Power
(T = 25°C, t = 8.3 ms)
A
P
0.01
1.0
G(AV)
ORDERING INFORMATION
*Forward Peak Gate Current
I
GM
Seedetailedorderingandshippinginformationinthepackage
dimensions section on page 264 of this data sheet.
(Pulse Width
1.0 µsec; T = 25°C)
A
*Reverse Peak Gate Voltage
V
5.0
RGM
Preferred devices are recommended choices for future use
and best overall value.
(Pulse Width
1.0 µsec; T = 25°C)
A
*Operating Junction Temperature Range
T
J
–40 to
+110
*Storage Temperature Range
T
stg
–40 to
+150
°C
*Indicates JEDEC Registered Data.
(1) V
DRM
and V for all types can be applied on a continuous basis. Ratings
RRM
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Semiconductor Components Industries, LLC, 2000
258
Publication Order Number:
May, 2000 – Rev. 4
2N5060/D
2N5060 Series
THERMAL CHARACTERISTICS
Characteristic
(1)
Symbol
Max
75
Unit
°C/W
°C/W
°C
*Thermal Resistance, Junction to Case
R
R
θJC
Thermal Resistance, Junction to Ambient
*Lead Solder Temperature
200
θJA
—
+230*
(Lead Length
1/16″ from case, 10 s Max)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(2)
*Peak Repetitive Forward or Reverse Blocking Current
(V = Rated V or V
I
, I
DRM RRM
)
T
C
T
C
= 25°C
= 110°C
—
—
—
—
10
50
µA
µA
AK DRM
RRM
ON CHARACTERISTICS
(3)
*Peak Forward On–State Voltage
V
TM
—
—
1.7
Volts
(I = 1.2 A peak @ T = 25°C)
TM
A
(4)
(4)
Gate Trigger Current (Continuous dc)
I
µA
GT
*(V
AK
= 7 Vdc, R = 100 Ohms)
T
T
= 25°C
= –40°C
—
—
—
—
200
350
L
C
C
Gate Trigger Voltage (Continuous dc)
*(V = 7 Vdc, R = 100 Ohms)
T
C
T
C
= 25°C
= –40°C
V
—
—
—
—
0.8
1.2
Volts
Volts
mA
GT
AK
*Gate Non–Trigger Voltage
(V = Rated V , R = 100 Ohms)
L
V
GD
T
= 110°C
0.1
—
—
AK
DRM
L
C
(4)
Holding Current
T
C
T
C
= 25°C
= –40°C
I
H
—
—
—
—
5.0
10
*(V = 7 Vdc, initiating current = 20 mA)
AK
Turn-On Time
Delay Time
Rise Time
µs
t
t
—
—
3.0
0.2
—
—
d
r
(I
GT
= 1 mA, V = Rated V
,
D
DRM
Forward Current = 1 A, di/dt = 6 A/µs
Turn-Off Time
(Forward Current = 1 A pulse,
Pulse Width = 50 µs,
t
µs
q
0.1% Duty Cycle, di/dt = 6 A/µs,
dv/dt = 20 V/µs, I
= 1 mA)
2N5060, 2N5061
2N5062, 2N5064
—
—
10
30
—
—
GT
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
dv/dt
—
30
—
V/µs
(Rated V
, Exponential)
DRM
*Indicates JEDEC Registered Data.
(1) This measurement is made with the case mounted “flat side down” on a heat sink and held in position by means of a metal clamp over the
curved surface.
(2) R
= 1000 Ω is included in measurement.
GK
(3) Forward current applied for 1 ms maximum duration, duty cycle
(4) R current is not included in measurement.
1%.
GK
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259
2N5060 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
Symbol
Parameter
V
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
DRM
DRM
on state
I
I
H
I
at V
RRM
RRM
V
RRM
I
RRM
V
TM
+ Voltage
at V
DRM DRM
I
H
Holding Current
I
Reverse Blocking Region
(off state)
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –
CURRENT DERATING
130
130
110
90
a
α = CONDUCTION ANGLE
α
α = CONDUCTION ANGLE
120
110
100
90
CASE MEASUREMENT
POINT – CENTER OF
FLAT PORTION
TYPICAL PRINTED
CIRCUIT BOARD
MOUNTING
dc
70
80
dc
α = 30°
180°
120°
60°
90°
70
50
30
60
50
α = 30°
60° 90° 120°
180°
0
0.1
0.2
0.3
0.4
0.5
0
0.1
0.2
0.3
0.4
I
, AVERAGE ON-STATE CURRENT (AMP)
I
, AVERAGE ON-STATE CURRENT (AMP)
T(AV)
T(AV)
Figure 1. Maximum Case Temperature
Figure 2. Maximum Ambient Temperature
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260
2N5060 Series
CURRENT DERATING
10
7.0
5.0
5.0
3.0
2.0
T = 110°C
J
25°C
3.0
2.0
1.0
0.7
0.5
1.0
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
0.3
0.2
NUMBER OF CYCLES
Figure 4. Maximum Non–Repetitive Surge Current
0.8
0.6
0.4
180°
120°
0.1
0.07
0.05
a
90°
60°
α = CONDUCTION ANGLE
α = 30°
0.03
0.02
dc
0.2
0
0.01
0
0.5
1.0
1.5
2.0
2.5
0
0.1
0.2
0.3
0.4
0.5
v , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
I , AVERAGE ON-STATE CURRENT (AMP)
T(AV)
Figure 3. Typical Forward Voltage
Figure 5. Power Dissipation
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (SECONDS)
Figure 6. Thermal Response
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261
2N5060 Series
TYPICAL CHARACTERISTICS
0.8
0.7
0.6
0.5
200
V
= 7.0 V
AK
R = 100
V
= 7.0 V
AK
100
50
L
R = 100
L
R
GK
= 1.0 k
2N5062-64
20
10
5.0
2N5060-61
2.0
1.0
0.5
0.4
0.3
0.2
–75
–50
–25
0
25
50
75
100 110
–75
–50
–25
0
25
50
75
100 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Typical Gate Trigger Voltage
Figure 8. Typical Gate Trigger Current
4.0
3.0
V
= 7.0 V
AK
R = 100
L
R
GK
= 1.0 k
2.0
2N5060,61
1.0
0.8
2N5062-64
0.6
0.4
–75
–50
–25
0
25
50
75
100 110
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Typical Holding Current
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262
2N5060 Series
TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL
H2A
H2A
H2B
H2B
H
W2
H4
H5
T1
L1
H1
W1
W
L
T
T2
F1
F2
D
P2
P1
P2
P
Figure 10. Device Positioning on Tape
Specification
Millimeter
Inches
Symbol
D
Item
Min
Max
Min
Max
0.1496
0.015
0.0945
.059
0.1653
3.8
4.2
Tape Feedhole Diameter
D2
F1, F2
H
0.020
0.110
.156
0.38
2.4
1.5
8.5
0
0.51
2.8
Component Lead Thickness Dimension
Component Lead Pitch
4.0
Bottom of Component to Seating Plane
Feedhole Location
H1
H2A
H2B
H4
H5
L
0.3346
0
0.3741
0.039
0.051
0.768
0.649
0.433
—
9.5
1.0
Deflection Left or Right
0
0
1.0
Deflection Front or Rear
0.7086
0.610
0.3346
0.09842
0.4921
0.2342
0.1397
0.06
18
19.5
16.5
11
Feedhole to Bottom of Component
Feedhole to Seating Plane
Defective Unit Clipped Dimension
Lead Wire Enclosure
15.5
8.5
2.5
12.5
5.95
3.55
0.15
—
L1
—
P
0.5079
0.2658
0.1556
0.08
12.9
6.75
3.95
0.20
1.44
0.65
19
Feedhole Pitch
P1
Feedhole Center to Center Lead
First Lead Spacing Dimension
Adhesive Tape Thickness
Overall Taped Package Thickness
Carrier Strip Thickness
P2
T
T1
—
0.0567
0.027
0.7481
0.2841
0.01968
T2
0.014
0.6889
0.2165
.0059
0.35
17.5
5.5
.15
W
Carrier Strip Width
W1
W2
6.3
Adhesive Tape Width
0.5
Adhesive Tape Position
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.
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263
2N5060 Series
ORDERING & SHIPPING INFORMATION: 2N5060 Series packaging options, Device Suffix
Europe
Equivalent
U.S.
Shipping
Description of TO92 Tape Orientation
2N5060,61,62,64
Bulk in Box (5K/Box)
N/A, Bulk
2N5060,61,62,64RLRA
2N5060,64RLRM
Radial Tape and Reel (2K/Reel)
Radial Tape and Fan Fold Box (2K/Box)
Round side of TO92 and adhesive tape visible
Flat side of TO92 and adhesive tape visible
2N5060RL1
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264
相关型号:
2N5064RLRM
Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-92, PLASTIC, TO-226AA, 3 PIN
MOTOROLA
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