1SMA8.5AT3 [ONSEMI]
400 Watt Peak Power Zener Transient Voltage Suppressors; 400瓦峰值功率齐纳瞬态电压抑制器
| 型号： | 1SMA8.5AT3 |
| 厂家： | 
ONSEMI |
| 描述： | 400 Watt Peak Power Zener Transient Voltage Suppressors |
| 文件： | 总6页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1SMA5.0AT3 Series
400 Watt Peak Power Zener
Transient Voltage Suppressors
Unidirectional*
The SMA series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMA series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
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PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.0 − 78 V, 400 W PEAK POWER
Specification Features
• Working Peak Reverse Voltage Range − 5.0 V to 78 V
• Standard Zener Breakdown Voltage Range − 6.7 V to 91.25 V
• Peak Power − 400 W @ 1 ms
CATHODE
ANODE
• ESD Rating of Class 3 (> 16 KV) per Human Body Model
• Response Time is Typically < 1 ns
SMA
CASE 403D
PLASTIC
• Flat Handling Surface for Accurate Placement
• Package Design for Top Slide or Bottom Circuit Board Mounting
• Low Profile Package
MARKING DIAGRAM
• Pb−Free Packages are Available
xx
LLYWW
Mechanical Characteristics
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
xx
= Specific Device Code
= (See Table on Page 3)
= Assembly Location
= Year
LL
Y
WW
POLARITY: Cathode indicated by molded polarity notch or polarity
band
= Work Week
MOUNTING POSITION: Any
ORDERING INFORMATION
†
Device
Package
Shipping
1SMAxxAT3
SMA
5000/Tape & Reel
5000/Tape & Reel
1SMAxxAT3G
SMA
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Individual devices are listed on page 3 of this data sheet.
*Please see 1SMA10CAT3 to 1SMA78CAT3 for
Bidirectional devices.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
April, 2004 − Rev. 6
1SMA5.0AT3/D
1SMA5.0AT3 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T = 25°C, Pulse Width = 1 ms
Symbol
Value
400
Unit
W
P
PK
L
DC Power Dissipation @ T = 75°C
P
D
1.5
W
L
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction to Lead
20
50
mW/°C
°C/W
R
q
JL
DC Power Dissipation (Note 3) @ T = 25°C
Derate Above 25°C
Thermal Resistance from Junction to Ambient
P
0.5
4.0
250
W
mW/°C
°C/W
A
D
R
q
JA
Forward Surge Current (Note 4) @ T = 25°C
I
40
A
A
FSM
Operating and Storage Temperature Range
T , T
−65 to +150
°C
J
stg
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. 10 X 1000 ms, non−repetitive
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
I
(T = 25°C unless otherwise noted, V = 3.5 V Max. @
I = 30 A for all types) (Note 5)
F
A
F
I
F
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
V
C
PP
V
C
V
V
BR RWM
V
I
V
F
V
RWM
Working Peak Reverse Voltage
R
T
I
I
R
Maximum Reverse Leakage Current @ V
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
F
I
PP
I
Forward Current
V
F
Forward Voltage @ I
F
Uni−Directional TVS
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive
duty cycle.
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2
1SMA5.0AT3 Series
ELECTRICAL CHARACTERISTICS
Breakdown Voltage
(Volts) (Note 7)
V
V
@ I (Note 8)
C
PP
V
RWM
V
BR
@ I
I
PP
(Note 6)
I
R
@ V
RWM
T
C
Device
Min
Nom
Max
mA
Volts
mA
Volts
Amps
Marking
Device
1SMA5.0AT3
1SMA6.0AT3
1SMA6.5AT3
1SMA7.0AT3
QE
QG
QK
QM
5.0
6.0
6.5
7.0
400
400
250
250
6.4
6.7
7.02
7.6
7.0
7.37
7.98
8.6
10
10
10
10
9.2
43.5
38.8
35.7
33.3
6.67
7.22
7.78
10.3
11.2
12.0
8.19
1SMA7.5AT3
1SMA8.0AT3
1SMA8.5AT3
1SMA9.0AT3
QP
QR
QT
QV
7.5
8.0
8.5
9.0
50
25
5.0
2.5
8.33
8.89
9.44
10
8.77
9.36
9.92
9.21
9.83
10.4
11.1
1
1
1
1
12.9
13.6
14.4
15.4
31.0
29.4
27.8
26.0
10.55
1SMA10AT3
1SMA11AT3
1SMA12AT3
1SMA13AT3
QX
QZ
RE
RG
10
11
12
13
2.5
2.5
2.5
2.5
11.1
12.2
13.3
14.4
11.7
12.85
14.0
12.3
13.5
14.7
15.9
1
1
1
1
17.0
18.2
19.9
21.5
23.5
22.0
20.1
18.6
15.15
1SMA14AT3
1SMA15AT3
1SMA16AT3, G*
1SMA17AT3
RK
RM
RP
RR
14
15
16
17
2.5
2.5
2.5
2.5
15.6
16.7
17.8
18.9
16.4
17.6
18.75
19.9
17.2
18.5
19.7
20.9
1
1
1
1
23.2
24.4
26.0
27.6
17.2
16.4
15.4
14.5
1SMA18AT3, G*
1SMA20AT3
1SMA22AT3
1SMA24AT3
RT
RV
RX
RZ
18
20
22
24
2.5
2.5
2.5
2.5
20
21.05
23.35
25.65
28.1
22.1
24.5
26.9
29.5
1
1
1
1
29.2
32.4
35.5
38.9
13.7
12.3
11.3
10.3
22.2
24.4
26.7
1SMA26AT3
1SMA28AT3
1SMA30AT3
1SMA33AT3
SE
SG
SK
SM
26
28
30
33
2.5
2.5
2.5
2.5
28.9
31.1
33.3
36.7
30.4
32.75
35.05
38.65
31.9
34.4
36.8
40.6
1
1
1
1
42.1
45.4
48.4
53.3
9.5
8.8
8.3
7.5
1SMA36AT3
1SMA40AT3
1SMA43AT3
1SMA45AT3
SP
SR
ST
SV
36
40
43
45
2.5
2.5
2.5
2.5
40
44.4
47.8
50
42.1
46.75
50.3
44.2
49.1
52.8
55.3
1
1
1
1
58.1
64.5
69.4
72.2
6.9
6.2
5.8
5.5
52.65
1SMA48AT3
1SMA51AT3
1SMA54AT3
1SMA58AT3
SX
SZ
TE
TG
48
51
54
58
2.5
2.5
2.5
2.5
53.3
56.7
60
56.1
59.7
63.15
67.8
58.9
62.7
66.3
71.5
1
1
1
1
77.4
82.4
87.1
93.6
5.2
4.9
4.6
4.3
64.4
1SMA60AT3
1SMA64AT3
1SMA70AT3
1SMA75AT3
1SMA78AT3
TK
TM
TP
TR
TS
60
64
70
75
78
2.5
2.5
2.5
2.5
2.5
66.7
71.1
77.8
83.3
86.7
70.2
74.85
81.9
87.7
91.25
73.7
78.6
86.0
92.1
95.8
1
1
1
1
1
96.8
103
113
121
126
4.1
3.9
3.5
3.3
3.2
6. A transient suppressor is normally selected according to the working peak reverse voltage (V
the DC or continuous peak operating voltage level
), which should be equal to or greater than
RWM
7. V measured at pulse test current I at an ambient temperature of 25°C
BR
T
8. Surge current waveform per Figure 2 and derate per Figure 3
* The “G” suffix indicates Pb−Free package available.
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3
1SMA5.0AT3 Series
RATING AND TYPICAL CHARACTERISTIC CURVES
100
10
1
120
T = 25°C
A
PW (I ) IS DEFINED AS THE
≤ 10 ms
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2.
D
POINT WHERE THE PEAK CURRENT
100
80
PEAK VALUE
I
DECAYS TO 50% OF I
.
pp
T = 25°C
A
ppm
60
HALF VALUE − I /2
pp
40
10/1000 ms WAVEFORM
AS DEFINED BY R.E.A.
20
0
t
d
0.1
−4
5
0
1
2
3
4
10
0.001
0.01
0.1
1
10
t , PULSE WIDTH (ms)
P
t, TIME (ms)
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
120
100
80
60
40
20
0
10,000
1,000
T = 25°C
J
f = 1 MHz
10 x 1000 WAVEFORM
AS DEFINED BY R.E.A.
MEASURED AT
ZERO BIAS
V
sig
= 50 mV
p−p
MEASURED AT
STAND−OFF
VOLTAGE, V
100
10
WM
0
40
80
120
160
200
1
2
5
10
20
50
100 200
T , AMBIENT TEMPERATURE (°C)
A
V
(BR)
, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Pulse Derating Curve
Figure 4. Typical Junction Capacitance
6
5
4
@ T = 75°C
L
3
2
P
D
= 1.5 W
@ T = 25°C
A
1
0
P
D
= 0.5 W
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 5. Steady State Power Derating
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4
1SMA5.0AT3 Series
SMA
CASE 403D−02
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS
403D−02.
S
A
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.06
2.29
1.91
1.27
0.05
0.15
0.76
4.83
MAX
4.57
2.92
2.41
1.63
0.15
0.41
1.52
5.59
A
B
C
D
H
J
0.160
0.090
0.075
0.050
0.002
0.006
0.030
0.190
0.180
0.115
0.095
0.064
0.006
0.016
0.060
0.220
D
B
POLARITY INDICATOR OPTIONAL
AS NEEDED
K
S
C
H
J
K
SOLDERING FOOTPRINT*
4.0
0.157
2.0
0.0787
2.0
0.0787
mm
inches
ǒ
Ǔ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
1SMA5.0AT3 Series
SURMETIC is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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1SMA5.0AT3/D
相关型号：
1SMA8.5AT3G
Trans Voltage Suppressor Diode, 400W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, SMA, 2 PIN
LITTELFUSE
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