1SMA8.5AT3G [ONSEMI]
400 Watt Peak Power Zener Transient Voltage Suppressors; 400瓦峰值功率齐纳瞬态电压抑制器
| 型号： | 1SMA8.5AT3G |
| 厂家： | 
ONSEMI |
| 描述： | 400 Watt Peak Power Zener Transient Voltage Suppressors |
| 文件： | 总5页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1SMA5.0AT3 Series
400 Watt Peak Power Zener
Transient Voltage
Suppressors
Unidirectional*
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The SMA series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMA series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.0 − 78 V, 400 W PEAK POWER
CATHODE
ANODE
Features
• Working Peak Reverse Voltage Range − 5.0 V to 78 V
• Standard Zener Breakdown Voltage Range − 6.7 V to 91.25 V
• Peak Power − 400 W @ 1 ms
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• Response Time is Typically < 1 ns
SMA
CASE 403D
PLASTIC
• Flat Handling Surface for Accurate Placement
• Package Design for Top Slide or Bottom Circuit Board Mounting
• Low Profile Package
MARKING DIAGRAM
• Pb−Free Packages are Available
xx
AYWWG
Mechanical Characteristics:
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
xx
A
Y
= Device Code (Refer to page 3)
= Assembly Location
= Year
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
WW = Work Week
260°C for 10 Seconds
POLARITY: Cathode indicated by molded polarity notch or polarity
band
G
= Pb−Free Package
ORDERING INFORMATION
MOUNTING POSITION: Any
†
Device
1SMAxxAT3
1SMAxxAT3G
Package
Shipping
SMA
5000/Tape & Reel
5000/Tape & Reel
SMA
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
July, 2006 − Rev. 9
1SMA5.0AT3/D
1SMA5.0AT3 Series
MAXIMUM RATINGS
Rating
Symbol
Value
400
Unit
W
Peak Power Dissipation (Note 1) @ T = 25°C, Pulse Width = 1 ms
P
PK
L
DC Power Dissipation @ T = 75°C
P
D
1.5
W
L
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction to Lead
20
50
mW/°C
°C/W
R
q
JL
DC Power Dissipation (Note 3) @ T = 25°C
P
0.5
4.0
250
W
mW/°C
°C/W
A
D
Derate Above 25°C
Thermal Resistance from Junction to Ambient
R
I
q
JA
Forward Surge Current (Note 4) @ T = 25°C
40
A
A
FSM
Operating and Storage Temperature Range
T , T
−65 to +150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive.
2. 1″ square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T = 25°C unless
I
A
otherwise noted, V = 3.5 V Max. @ I = 30 A for all types) (Note 5)
F
F
I
F
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
V
C
PP
V
C
V
V
V
Working Peak Reverse Voltage
BR RWM
RWM
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V
I
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
I
F
Forward Current
I
PP
V
F
Forward Voltage @ I
F
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive duty
cycle.
Uni−Directional TVS
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2
1SMA5.0AT3 Series
ELECTRICAL CHARACTERISTICS
V
C
@ I
PP
(Note 8)
Breakdown Voltage
(Volts) (Note 7)
V
I
V
@
C Typ.
(Note 9)
RWM
R
V
BR
@ I
V
I
(Note 6)
T
C
PP
RWM
Device
Min
Nom
Max
mA
Volts
mA
Volts
Amps
pF
Marking
Device
1SMA5.0AT3, G
1SMA6.0AT3, G
1SMA6.5AT3, G
1SMA7.0AT3, G
QE
QG
QK
QM
5.0
6.0
6.5
7.0
400
400
250
250
6.4
6.7
7.02
7.6
7.0
7.37
7.98
8.6
10
10
10
10
9.2
43.5
38.8
35.7
33.3
2035
1730
1605
1505
6.67
7.22
7.78
10.3
11.2
12.0
8.19
1SMA7.5AT3, G
1SMA8.0AT3, G
1SMA8.5AT3, G
1SMA9.0AT3, G
QP
QR
QT
QV
7.5
8.0
8.5
9.0
50
25
5.0
2.5
8.33
8.89
9.44
10
8.77
9.36
9.92
9.21
9.83
10.4
11.1
1
1
1
1
12.9
13.6
14.4
15.4
31.0
29.4
27.8
26.0
1415
1035
1265
1200
10.55
1SMA10AT3, G
1SMA11AT3, G
1SMA12AT3, G
1SMA13AT3, G
QX
QZ
RE
RG
10
11
12
13
2.5
2.5
2.5
2.5
11.1
12.2
13.3
14.4
11.7
12.85
14.0
12.3
13.5
14.7
15.9
1
1
1
1
17.0
18.2
19.9
21.5
23.5
22.0
20.1
18.6
1090
1000
925
15.15
860
1SMA15AT3, G
1SMA16AT3, G
1SMA17AT3, G
RM
RP
RR
15
16
17
2.5
2.5
2.5
16.7
17.8
18.9
17.6
18.75
19.9
18.5
19.7
20.9
1
1
1
24.4
26.0
27.6
16.4
15.4
14.5
758
715
680
1SMA18AT3, G
1SMA20AT3, G
1SMA22AT3, G
1SMA24AT3, G
RT
RV
RX
RZ
18
20
22
24
2.5
2.5
2.5
2.5
20
21.05
23.35
25.65
28.1
22.1
24.5
26.9
29.5
1
1
1
1
29.2
32.4
35.5
38.9
13.7
12.3
11.3
10.3
645
585
540
500
22.2
24.4
26.7
1SMA26AT3, G
1SMA28AT3, G
1SMA30AT3, G
1SMA33AT3, G
SE
SG
SK
SM
26
28
30
33
2.5
2.5
2.5
2.5
28.9
31.1
33.3
36.7
30.4
32.75
35.05
38.65
31.9
34.4
36.8
40.6
1
1
1
1
42.1
45.4
48.4
53.3
9.5
8.8
8.3
7.5
460
430
405
375
1SMA36AT3, G
1SMA40AT3, G
1SMA43AT3, G
1SMA45AT3, G
SP
SR
ST
SV
36
40
43
45
2.5
2.5
2.5
2.5
40
44.4
47.8
50
42.1
46.75
50.3
44.2
49.1
52.8
55.3
1
1
1
1
58.1
64.5
69.4
72.2
6.9
6.2
5.8
5.5
345
315
295
280
52.65
1SMA48AT3, G
1SMA51AT3, G
1SMA54AT3, G
1SMA58AT3, G
SX
SZ
TE
TG
48
51
54
58
2.5
2.5
2.5
2.5
53.3
56.7
60
56.1
59.7
63.15
67.8
58.9
62.7
66.3
71.5
1
1
1
1
77.4
82.4
87.1
93.6
5.2
4.9
4.6
4.3
265
250
240
225
64.4
1SMA64AT3, G
1SMA70AT3, G
1SMA75AT3, G
TM
TP
TR
64
70
75
2.5
2.5
2.5
71.1
77.8
83.3
74.85
81.9
87.7
78.6
86.0
92.1
1
1
1
103
113
121
3.9
3.5
3.3
205
190
180
6. A transient suppressor is normally selected according to the working peak reverse voltage (V
the DC or continuous peak operating voltage level.
), which should be equal to or greater than
RWM
7. V measured at pulse test current I at an ambient temperature of 25°C.
BR
T
8. Surge current waveform per Figure 2 and derate per Figure 3.
9. Bias voltage = 0 V, F = 1.0 MHz, T = 25°C.
J
†Please see 1SMA10CAT3 to 1SMA75CAT3 for Bidirectional devices.
* The “G” suffix indicates Pb−Free package available.
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3
1SMA5.0AT3 Series
RATING AND TYPICAL CHARACTERISTIC CURVES
100
10
1
120
T = 25°C
D
POINT WHERE THE PEAK CURRENT
A
PW (I ) IS DEFINED AS THE
≤ 10 ms
NONREPETITIVE
100
80
PULSE WAVEFORM
SHOWN IN FIGURE 2.
PEAK VALUE
DECAYS TO 50% OF I .
pp
T = 25°C
A
I
ppm
60
HALF VALUE − I /2
pp
40
10/1000 ms WAVEFORM
AS DEFINED BY R.E.A.
20
0
t
d
0.1
−4
5
0
1
2
3
4
10
0.001
0.01
0.1
1
10
t , PULSE WIDTH (ms)
P
t, TIME (ms)
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
120
100
80
60
40
20
0
10,000
1,000
100
T = 25°C
J
F = 1 MHz
10 x 1000 WAVEFORM
AS DEFINED BY R.E.A.
1SMA5.0AT3G
1SMA10AT3G
1SMA36AT3G
1SMA64AT3G
10
1
0
40
80
120
160
200
1
10
BIAS VOLTAGE (VOLTS)
100
T , AMBIENT TEMPERATURE (°C)
A
Figure 3. Pulse Derating Curve
Figure 4. Typical Junction Capacitance vs.
Bias Voltage
6
5
4
@ T = 75°C
L
3
2
P
D
= 1.5 W
@ T = 25°C
A
1
0
P
D
= 0.5 W
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 5. Steady State Power Derating
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4
1SMA5.0AT3 Series
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE C
NOTES:
H
E
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02.
E
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
MIN
1.91
0.05
1.27
0.15
2.29
4.06
4.83
0.76
NOM
2.16
0.10
1.45
0.28
2.60
4.32
5.21
1.14
MAX
MIN
NOM
0.085
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.095
0.006
0.064
0.016
0.115
0.180
0.220
0.060
2.41
0.15
1.63
0.41
2.92
4.57
5.59
1.52
0.075
0.002
0.050
0.006
0.090
0.160
0.190
0.030
b
D
E
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
H
E
L
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
A1
c
L
SOLDERING FOOTPRINT*
4.0
0.157
2.0
0.0787
2.0
0.0787
mm
inches
ǒ
Ǔ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SURMETIC is a trademark of Semiconductor Components Industries, LLC.
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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1SMA5.0AT3/D
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