MSM511664CL-XXTS-K
更新时间:2024-09-18 11:19:05
品牌:OKI
描述:65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE)
MSM511664CL-XXTS-K 概述
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE) 65536字×16位动态RAM :快速页面模式类型(字节写入)
MSM511664CL-XXTS-K 数据手册
通过下载MSM511664CL-XXTS-K数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载E2G0014-17-41
This version: Jan. 1998
Previous version: May 1997
¡ Semiconductor
MSM511664C/CL
65,536-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE)
DESCRIPTION
The MSM511664C/CL is a 65,536-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM511664C/CL achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer
metal CMOS process. The MSM511664C/CL is available in a 40-pin plastic SOJ or 44/40-pin plastic
TSOP.TheMSM511664CL(thelow-powerversion)isspeciallydesignedforlower-powerapplications.
FEATURES
• 65,536-word ¥ 16-bit configuration
• Single 5 V power supply, ±10% tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 256 cycles/4 ms, 256 cycles/32 ms (L-version)
• Byte write and fast page mode, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Package options:
40-pin 400 mil plastic SOJ
(SOJ40-P-400-1.27)
(Product : MSM511664C/CL-xxJS)
44/40-pin 400 mil plastic TSOP
(TSOPII44/40-P-400-0.80-K) (Product : MSM511664C/CL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Cycle Time
(Min.)
Power Dissipation
Family
tRAC tAA tCAC tOEA
60 ns 30 ns 20 ns 20 ns
70 ns 40 ns 25 ns 25 ns
80 ns 45 ns 30 ns 30 ns
Standby (Max.)
Operating (Max.)
MSM511664C/CL-60
MSM511664C/CL-70
MSM511664C/CL-80
110 ns
120 ns
135 ns
550 mW
495 mW
440 mW
5.5 mW/
1.1 mW (L-version)
1/16
¡ Semiconductor
MSM511664C/CL
PIN CONFIGURATION (TOP VIEW)
VCC
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
1
2
3
4
5
6
7
8
9
44 VSS
VCC
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
1
2
3
4
5
6
7
8
9
40 VSS
39 DQ16
38 DQ15
37 DQ14
36 DQ13
35 DQ12
34 DQ11
33 DQ10
32 DQ9
31 NC
43 DQ16
42 DQ15
41 DQ14
40 DQ13
39 DQ12
38 DQ11
37 DQ10
36 DQ9
35 NC
NC 10
NC 10
VCC 11
UWE 12
LWE 13
RAS 14
A0 15
VCC 13
UWE 14
LWE 15
RAS 16
A0 17
A1 18
A2 19
A3 20
A4 21
32 VSS
31 CAS
30 OE
29 NC
28 NC
27 NC
26 A7
25 A6
24 A5
23 VSS
30 VSS
29 CAS
28 OE
27 NC
26 NC
A1 16
25 NC
A2 17
24 A7
VCC 22
A3 18
23 A6
44/40-Pin Plastic TSOP
(K Type)
A4 19
22 A5
VCC 20
21 VSS
40-Pin Plastic SOJ
Pin Name
Function
A0 - A7
RAS
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
CAS
DQ1 - DQ16
OE
LWE
Lower Byte Write Enable
Upper Byte Write Enable
Power Supply (5 V)
Ground (0 V)
UWE
VCC
VSS
NC
No Connection
Note :
The same power supply voltage must be provided to every V pin, and the same GND
CC
voltage level must be provided to every V pin.
SS
2/16
¡ Semiconductor
MSM511664C/CL
BLOCK DIAGRAM
Timing
Generator
RAS
Timing
Generator
CAS
Write
Clock
Generator
UWE
LWE
Column
Address
Buffers
Column
Decoders
8
8
OE
Output
Buffers
16
16
16
Internal
Address
Counter
I/O
Selector
Refresh
Control Clock
Sense
Amplifiers
A0 - A7
16
16
16
DQ1 - DQ16
Input
Buffers
16
Row
Address
Buffers
Row
De-
8
8
Word
Drivers
Memory
Cells
coders
VCC
On Chip
BB Generator
V
VSS
FUNCTION TABLE
Input Pin
DQ Pin
DQ1 - DQ8
Function Mode
RAS
CAS
LWE
UWE
OE
DQ9 - DQ16
High-Z
High-Z
DOUT
Standby
Refresh
H
L
L
L
L
L
L
High-Z
High-Z
DOUT
*
H
*
*
*
*
H
*
H
*
L
Word Read
Lower Byte Write
Upper Byte Write
Word Write
—
L
L
L
L
L
DIN
L
H
L
H
L
H
H
H
H
Don't Care
DIN
Don't Care
DIN
DIN
L
High-Z
High-Z
H
H
*: "H" or "L"
3/16
¡ Semiconductor
MSM511664C/CL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to VSS
Short Circuit Output Current
Power Dissipation
Symbol
VT
Rating
–1.0 to 7.0
50
Unit
V
IOS
mA
W
PD
*
1
Operating Temperature
Storage Temperature
Topr
Tstg
0 to 70
–55 to 150
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter
Power Supply Voltage
Symbol
VCC
Min.
4.5
0
Typ.
5.0
0
Max.
Unit
5.5
0
V
V
V
V
VSS
Input High Voltage
Input Low Voltage
VIH
2.4
–1.0
—
6.5
0.8
VIL
—
Capacitance
(VCC = 5 V 10ꢀ% Ta = 25°C% f = 1 MHꢁ)
Parameter
Symbol
Typ.
Max.
Unit
Input Capacitance (A0 - A7)
Input Capacitance
CIN1
—
—
—
7
pF
CIN2
CI/O
7
7
pF
pF
(RAS% CAS% UWE% LWE% OE)
Output Capacitance (DQ1 - DQ16)
4/16
¡ Semiconductor
MSM511664C/CL
DC Characteristics
(VCC = 5 V 10ꢀ% Ta = 0°C to 70°C)
MSM511664 MSM511664 MSM511664
C/CL-60 C/CL-70 C/CL-80
Parameter
Symbol
Condition
Unit Note
Min. Max. Min. Max. Min. Max.
Output High Voltage
Output Low Voltage
VOH IOH = –2.5 mA
VOL IOL = 2.1 mA
0 V £ VI £ 6.5 V;
ILI All other pins not
under test = 0 V
DQ disable
2.4
0
VCC
0.4
2.4
0
VCC
0.4
2.4
0
VCC
0.4
V
V
Input Leakage Current
–10
–10
—
10
10
–10
–10
—
10
10
90
–10
–10
—
10
10
80
mA
Output Leakage Current ILO
mA
0 V £ VO £ 5.5 V
Average Power
RAS% CAS cycling%
Supply Current
(Operating)
ICC1
100
mA 1% 2
tRC = Min.
RAS% CAS = VIH
—
—
—
2
1
—
—
—
2
1
—
—
—
2
1
Power Supply
mA
1
ICC2 RAS% CAS
≥ VCC –0.2 V
RAS cycling%
ICC3 CAS = VIH%
tRC = Min.
Current (Standby)
200
200
200
mA 1% 5
Average Power
Supply Current
—
—
—
—
—
100
5
—
—
—
—
—
90
5
—
—
—
—
—
80
5
mA 1% 2
(RAS-only Refresh)
RAS = VIH%
Power Supply
ICC5 CAS = VIL%
DQ = enable
mA
1
Current (Standby)
Average Power
Supply Current
(CAS before RAS Refresh)
Average Power
Supply Current
(Fast Page Mode)
Average Power
Supply Current
(Battery Backup)
RAS cycling%
ICC6
100
95
90
85
300
80
75
300
mA 1% 2
mA 1% 3
CAS before RAS
RAS = VIL%
ICC7 CAS cycling%
tPC = Min.
tRC = 125 ms%
1% 4%
ICC10
300
mA
CAS before RAS%
tRAS £ 1 ms
5
Notes : 1. I Max. is specified as I for output open condition.
CC
CC
2. The address can be changed once or less while RAS = V .
IL
3. The address can be changed once or less while CAS = V
.
IH
4. V – 0.2 V £ V £ 6.5 V, –1.0 V £ V £ 0.2 V.
CC
IH
IL
5. L-version.
5/16
¡ Semiconductor
MSM511664C/CL
AC Characteristics (1/2)
(VCC = 5 V 10ꢀ% Ta = 0°C to 70°C) Note 1% 2% 3
MSM511664 MSM511664 MSM511664
C/CL-60 C/CL-70 C/CL-80
Parameter
Symbol
Unit Note
Min. Max. Min. Max. Min. Max.
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
tRC
110
—
—
—
120
170
50
—
—
—
135
185
55
—
—
—
ns
ns
ns
tRWC 155
tPC
40
Fast Page Mode Read Modify Write
Cycle Time
85
—
95
—
100
—
ns
tPRWC
Access Time from RAS
Access Time from CAS
Access Time from Column Address
Access Time from CAS Precharge
tRAC
tCAC
tAA
—
—
—
—
60
20
30
35
—
—
—
—
70
25
40
45
—
—
—
—
80
30
45
50
ns 4% 5% 6
ns
ns
ns
4% 5
4% 6
4
tCPA
Access Time from OE
Output Low Impedance Time from CAS
tOEA
tCLZ
—
0
20
—
20
15
50
4
—
0
25
—
20
15
50
4
—
0
30
—
20
15
50
4
ns
ns
ns
ns
ns
ms
ms
ns
4
4
7
7
3
0
0
0
CAS to Data Output Buffer Turn-off Delay Time tOFF
OE to Data Output Buffer Turn-off Delay Time
Transition Time
0
0
0
tOEZ
tT
tREF
tREF
tRP
3
3
3
Refresh Period
—
—
40
—
—
40
—
—
45
32
—
32
—
32
—
Refresh Period (L-version)
RAS Precharge Time
60 10%000 70 10%000 80 10%000 ns
60 100%000 70 100%000 80 100%000 ns
RAS Pulse Width
tRAS
RAS Pulse Width (Fast Page Mode)
RAS Hold Time
RAS Hold Time referenced to OE
CAS Precharge Time (Fast Page Mode)
CAS Pulse Width
tRASP
tRSH
tROH
tCP
20
15
10
—
—
—
25
15
10
—
—
—
30
15
10
—
—
—
ns
ns
ns
tCAS
tCSH
tCRP
tRHCP
tRCD
tRAD
tASR
tRAH
tASC
tCAH
tAR
20 10%000 25 10%000 30 10%000 ns
CAS Hold Time
60
5
—
—
—
40
30
—
—
—
70
5
—
—
—
45
30
—
—
—
80
5
—
—
—
50
35
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
CAS to RAS Precharge Time
RAS Hold Time from CAS Precharge
RAS to CAS Delay Time
RAS to Column Address Delay Time
Row Address Set-up Time
Row Address Hold Time
35
20
15
0
45
20
15
0
50
22
17
0
5
6
10
0
10
0
12
0
Column Address Set-up Time
Column Address Hold Time
Column Address Hold Time from RAS
Column Address to RAS Lead Time
Read Command Set-up Time
Read Command Hold Time
10
45
30
0
—
—
—
—
—
—
10
45
40
0
—
—
—
—
—
—
15
55
45
0
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
tRAL
tRCS
tRCH
0
0
0
8
8
Read Command Hold Time referenced to RAS tRRH
0
0
0
6/16
¡ Semiconductor
MSM511664C/CL
AC Characteristics (2/2)
(VCC = 5 V 10ꢀ% Ta = 0°C to 70°C) Note 1% 2% 3
MSM511664 MSM511664 MSM511664
C/CL-60 C/CL-70 C/CL-80
Unit Note
Parameter
Symbol
Min. Max. Min. Max. Min. Max.
Write Command Set-up Time
tWCS
0
—
0
—
0
—
ns
9
Write Command Hold Time
Write Command Hold Time from RAS
tWCH
tWCR
10
40
—
—
10
45
—
—
15
55
—
—
ns
ns
Write Command Pulse Width
OE Command Hold Time
Write Command to RAS Lead Time
Write Command to CAS Lead Time
tWP
tOEH
tRWL
tCWL
10
10
20
20
—
—
—
—
10
10
20
20
—
—
—
—
15
10
20
20
—
—
—
—
ns
ns
ns
ns
Data-in Set-up Time
tDS
tDH
0
—
—
—
—
—
—
—
—
—
—
—
0
—
—
—
—
—
—
—
—
—
—
—
0
15
55
15
55
70
105
75
0
—
—
—
—
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
10
Data-in Hold Time
10
40
15
40
50
80
10
45
15
50
60
95
70
0
Data-in Hold Time from RAS
OE to Data-in Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
RAS to WE Delay Time
tDHR
tOED
tCWD
tAWD
tRWD
9
9
9
9
CAS Precharge WE Delay Time
CAS Active Delay Time from RAS Precharge
RAS to CAS Set-up Time (CAS before RAS) tCSR
RAS to CAS Hold Time (CAS before RAS) tCHR
tCPWD 55
tRPC
0
5
10
5
10
5
10
7/16
¡ Semiconductor
MSM511664C/CL
Notes: 1. A start-up delay of 100 µs is required after power-up, followed by a minimum of eight
initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device
operation is achieved.
2. The AC characteristics assume t = 5 ns.
T
3. V (Min.) and V (Max.) are reference levels for measuring input timing signals.
IH
IL
Transition times (t ) are measured between V and V .
T
IH
IL
4. This parameter is measured with a load circuit equivalent to 1 TTL load and 50 pF.
5. Operation within the t (Max.) limit ensures that t (Max.) can be met.
RCD
RAC
t
(Max.) is specified as a reference point only. If t
(Max.) limit, then the access time is controlled by t
is greater than the specified
RCD
RCD
t
.
RCD
CAC
6. Operation within the t
(Max.) limit ensures that t
(Max.) can be met.
is greater than the specified
RAD
RAC
t
(Max.) is specified as a reference point only. If t
RAD
RAD
t
(Max.) limit, then the access time is controlled by t
.
RAD
AA
7. t
(Max.) and t
(Max.) define the time at which the output achieves the open
OFF
OEZ
circuit condition and are not referenced to output voltage levels.
8. t
9. t
or t
must be satisfied for a read cycle.
RCH
RRH
, t
, t
, t
and t
are not restrictive operating parameters. They are
WCS CWD RWD AWD
CPWD
included in the data sheet as electrical characteristics only. If t
≥t
(Min.), then
WCS WCS
the cycle is an early write cycle and the data out will remain open circuit (high
impedance) throughout the entire cycle. If t ≥ t (Min.) , t ≥ t (Min.),
CWD
CWD
RWD
RWD
t
≥ t
(Min.) and t
≥ t
(Min.), then the cycle is a read modify write
AWD
AWD
CPWD
CPWD
cycle and data out will contain data read from the selected cell; if neither of the above
sets of conditions is satisfied, then the condition of the data out (at access time) is
indeterminate.
10. These parameters are referenced to the CAS leading edge in an early write cycle, and
to the WE leading edge in an OE control write cycle, or a read modify write cycle.
8/16
E2G0092-17-41E
¡ Semiconductor
MSM511664C/CL
TIMING WAVEFORM
Read Cycle
tRC
tRP
tCRP
tRAS
VIH
VIL
–
–
tAR
RAS
tCSH
tCRP
tRCD
tRSH
tCAS
VIH
VIL
–
–
CAS
tRAD
tASC
tASR
Row
tRAH
tRAL
tCAH
Column
VIH
VIL
–
–
Address
tRCH
tRCS
tRRH
VIH
VIL
–
–
tAA
WE
OE
tROH
tOEA
VIH
VIL
–
–
tOFF
tCAC
tRAC
tOEZ
VOH
VOL
–
–
DQ
Open
Valid Data-out
tCLZ
"H" or "L"
Write Cycle (Early Write)
tRC
tRP
tRAS
VIH
VIL
–
–
tAR
tCRP
RAS
CAS
tCSH
tCRP
tRCD
tRAD
tRAH
tASC
tRSH
tCAS
VIH
VIL
–
–
tRAL
tASR
Row
tCAH
Column
tWCH
VIH
VIL
–
–
Address
tWCS
tCWL
VIH
VIL
–
–
tWP
WE
tRWL
tWCR
VIH
VIL
–
–
OE
tDHR
tDS
tDH
VIH
VIL
–
–
DQ
Open
Valid Data-in
"H" or "L"
9/16
¡ Semiconductor
MSM511664C/CL
Read Modify Write Cycle
tRWC
tRAS
tRP
VIH
VIL
–
–
tAR
RAS
CAS
tCRP
tCSH
tCRP
tRCD
tRSH
tCAS
VIH
VIL
–
–
tRAH
tASC
tASR
tCAH
Column
VIH
VIL
–
–
Row
Address
tCWL
tRWL
tWP
tCWD
tAWD
tRAD
tRWD
tOEA
VIH
VIL
–
–
tAA
WE
OE
tRCS
VIH
VIL
–
–
tOED
tOEZ
tOEH
tDH
tCAC
tDS
tRAC
VI/OH
–
Valid
Data-out
Valid
Data-in
DQ
–
tCLZ
VI/OL
"H" or "L"
10/16
¡ Semiconductor
MSM511664C/CL
Fast Page Mode Read Cycle
tRASP
tRP
tAR
tRCD
tRAD
tRAH tASC
tRHCP
VIH
VIL
–
–
RAS
CAS
tCRP
tPC
tRSH
tCRP
tCP
tCP
tCAS
tCAS
tCAS
tRAL
VIH
VIL
–
–
tCSH
tCAH
tASR
Row
tASC
tCAH
tASC tCAH
VIH
VIL
–
–
Column
Column
Column
tRCS
Address
tRCH
tRCS
tRCS
tRCH
tRCH
VIH
VIL
–
–
WE
tAA
tAA
tAA
tRRH
tCPA
tCPA
tOEA
tOEA
tOEA
VIH
VIL
–
–
OE
tOFF
tOEZ
tOFF
tOEZ
tCAC
tCLZ
tCAC
tCLZ
tOFF
tCAC
tRAC
tOEZ
VOH
VOL
–
–
Valid
Data-out
Valid
Data-out
Valid
Data-out
DQ
tCLZ
"H" or "L"
Fast Page Mode Write Cycle (Early Write)
tRASP
tPC
tRP
tCRP
tAR
tRHCP
VIH
VIL
–
–
RAS
CAS
tRSH
tCAS
tRAL
tCRP
tRCD
tCP
tCP
tCAS
tCAS
tCAH
Column
VIH
VIL
–
–
tCSH
tCAH
tASR
Row
tASC
tASC
tASC
tRAH
tCAH
VIH
VIL
–
–
Column
tCWL
tWCH
tWP
Column
Address
tRAD
tWCS
tCWL
tWCH
tWP
tRWL
tCWL
tWCH
tWP
tWCS
tWCS
VIH
VIL
–
–
WE
tWCR
tDS
tDS
tDS
tDH
tDH
tDH
VIH
VIL
–
–
Valid
Data-in
Valid
Data-in
Valid Data-in
tDHR
DQ
Note: OE = "H" or "L"
"H" or "L"
11/16
¡ Semiconductor
MSM511664C/CL
Fast Page Mode Read Modify Write Cycle
tRASP
VIH
VIL
tAR
–
–
RAS
CAS
tRP
tCSH
tPRWC
tCAS
tRSH
tCAS
tCRP
tCP
tCP
tRCD
tCAS
VIH
VIL
–
–
tRAD
tRAH
tASC
tCAH
tASC
tRAL
tCAH
tCAH
tASR
tASC
VIH
VIL
–
–
Column
tRWD
Column
tRCS
Column
Address
Row
tRCS
tCPWD
tCPWD
tCWD
tRWL
tCWL
tCWD
tCWD
tRCS
tCWL
tCWL
VIH
VIL
–
–
WE
tAWD
tAWD
tAWD
tROH
tWP
tWP
tDH
tWP
tDH
tDH
tDS
tDS
tDS
tRAC
tCPA
tAA
tCPA
tAA
tAA
tOEA
tOEA
tOEA
tOED
tOED
tOED
VIH
VIL
–
–
OE
tOEZ
tOEZ
tOEZ
tCAC
tCAC
tCAC
VI/OH
–
DQ
Out
In
Out
In
Out
In
–
VI/OL
tCLZ
tCLZ
tCLZ
"H" or "L"
RAS-Only Refresh Cycle
tRC
tRP
tRAS
VIH
VIL
–
–
RAS
CAS
tCRP
tRPC
VIH
VIL
–
–
tASR tRAH
VIH
VIL
–
–
Address
DQ
Row
tOFF
VOH
VOL
–
–
Open
Note: WE% OE = "H" or "L"
"H" or "L"
12/16
¡ Semiconductor
MSM511664C/CL
CAS before RAS Refresh Cycle
tRC
tRP
tRAS
tRP
VIH
VIL
–
–
RAS
tRPC
tRPC
tCP
tCSR
tCHR
VIH
VIL
–
–
CAS
tOFF
VOH
VOL
–
–
DQ
Open
Note: WE% OE% Address = "H" or "L"
"H" or "L"
Hidden Refresh Read Cycle
tRC
tRC
tRAS
tRAS
tRP
tRP
VIH
VIL
–
–
tAR
tRCD
RAS
tCRP
tRSH
tCHR
VIH
VIL
–
–
tRAD
tASC
tRAH
CAS
tCAH
tASR
VIH
VIL
–
–
Address
Row
Column
tRCS
tRRH
tRAL
VIH
VIL
–
–
tAA
WE
OE
tROH
tOEA
VIH
VIL
–
–
tCAC
tCLZ
tOFF
tRAC
tOEZ
VOH
VOL
–
–
DQ
Valid Data-out
"H" or "L"
13/16
¡ Semiconductor
MSM511664C/CL
Hidden Refresh Write Cycle
tRC
tRC
tRP
tRAS
tRAS
tRP
VIH
VIL
–
–
tAR
tRCD
RAS
tCRP
tRSH
tCHR
VIH
VIL
–
–
tRAD
tASC
tRAH
CAS
tCAH
tASR
tRAL
VIH
VIL
–
–
Address
Column
Row
tWCS
tWCH
tWP
VIH
VIL
–
–
WE
tWCR
VIH
VIL
–
–
OE
tDS
tDH
VIH
VIL
–
–
DQ
Valid Data-in
tDHR
"H" or "L"
14/16
¡ Semiconductor
MSM511664C/CL
PACKAGE DIMENSIONS
(Unit : mm)
SOJ40-P-400-1.27
Mirror finish
Package material
Epoxy resin
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
42 alloy
Solder plating
5 mm or more
1.70 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
15/16
¡ Semiconductor
MSM511664C/CL
(Unit : mm)
TSOPII44/40-P-400-0.80-K
Mirror finish
Package material
Epoxy resin
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
42 alloy
Solder plating
5 mm or more
0.49 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
16/16
MSM511664CL-XXTS-K 相关器件
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MSM511666C | OKI | 65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO (BYTE WRITE) | 获取价格 | |
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MSM511666CL | OKI | 65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO (BYTE WRITE) | 获取价格 | |
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MSM511666CL-70TS-K | OKI | 65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO (BYTE WRITE) | 获取价格 |
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