MK31VT864A [OKI]

8,388,608 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK); 8,388,608字×64位同步动态RAM模块( 1BANK )
MK31VT864A
型号: MK31VT864A
厂家: OKI ELECTRONIC COMPONETS    OKI ELECTRONIC COMPONETS
描述:

8,388,608 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK)
8,388,608字×64位同步动态RAM模块( 1BANK )

文件: 总11页 (文件大小:106K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MK31VT864A-8YC 98.07.17  
Semiconductor  
MK31VT864A-8YC  
8,388,608 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK):  
DESCRIPTION  
The Oki MK31VT864A-8YC is a fully decoded, 8,388,608 x 64bit synchronous dynamic  
random access memory composed of eight 64Mb DRAMs (8Mx8) in TSOP packages  
mounted with decoupling capacitors on a 168-pin glass epoxy Dual-in-Line Package  
supports any application where high density and large capacity of storage memory are  
required, like for example PCs or servers.  
FEATURES  
8-Meg Word x 64-Bit (1Bank 8 Byte) organization  
168-pin Dual Inline Memory Module  
All DQ Pins have 10Damping Resister  
Single 3.3V power supply, ±0.3V tolerance  
Input  
:LVTTL compatible  
Output :LVTTL compatible  
Refresh : 4,096 cycles/64 ms  
Programmable data transfer mode  
(2, 3)  
/CAS latency  
Burst length (1, 2, 4, 8, Full page)  
Data scramble(sequential, interleave)  
/CAS before /RAS auto-refresh, Self-refresh capability  
Serial Presence Detect (SPD) With EEPROM  
PRODUCT ORGANIZATION  
Operation  
Access Time (Max.)  
Product Name  
Frequency (Max.)  
tAC2  
tAC3  
MK31VT864A - 8YC  
125 MHz  
10.0ns  
6.0ns  
Note. Specification are subject to change without notice.  
Page 1/11  
MK31VT864A-8YC 98.07.17  
BLOCK DIAGRAM  
CKE0  
/CS0  
DQMB0  
/CS2  
DQMB2  
DQM /CS CKE  
DQ0  
DQM /CS CKE  
DQ0  
DQ16  
DQ0  
3
1
DQ23  
DQ7  
DQ7  
DQ7  
DQMB3  
DQMB1  
DQM /CS CKE  
DQ0  
DQM /CS CKE  
DQ0  
DQ24  
DQ8  
2
4
DQ7  
DQ7  
DQ31  
DQ15  
DQMB4  
DQMB6  
DQM /CS CKE  
DQ0  
DQM /CS CKE  
DQ0  
DQ32  
DQ48  
5
7
DQ39  
DQ55  
DQ7  
DQ7  
DQMB5  
DQMB7  
DQM /CS CKE  
DQ0  
DQM /CS CKE  
DQ0  
DQ40  
DQ47  
DQ56  
DQ63  
6
8
DQ7  
DQ7  
Serial PD  
SDA  
WP  
9
SCL  
A0 A1 A2  
47K  
SA0 SA1 SA2  
1
2
5
6
3
4
7
8
CLK1  
CLK3  
CLK0  
CLK2  
10pF  
3.3pF  
3.3pF  
Vcc  
Vss  
Two Decoupling Capacitors  
per SDRAM  
/RAS,/CAS,/WE  
A0-A15 & BA0,BA1  
8
1
0.1uF  
0.33uF  
Note. The Value of all resistors is 10expect WP  
MODULE OUTLINE  
10 11  
94 95  
1
84  
(Front)  
(Back)  
40 41  
124 125  
168  
85  
Page 2/11  
MK31VT864A-8YC 98.07.17  
PIN CONFIGURATION  
Front side  
Back side  
Front side  
Back side  
Pin No. Pin name Pin No. Pin name  
Pin No. Pin name Pin No. Pin name  
1
VSS  
DQ0  
DQ1  
DQ2  
DQ3  
VCC  
DQ4  
DQ5  
DQ6  
DQ7  
DQ8  
VSS  
DQ9  
DQ10  
DQ11  
DQ12  
DQ13  
VCC  
DQ14  
DQ15  
N.C  
85  
VSS  
DQ32  
DQ33  
DQ34  
DQ35  
VCC  
DQ36  
DQ37  
DQ38  
DQ39  
DQ40  
VSS  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
VCC  
DQ46  
DQ47  
N.C  
N.C  
VSS  
N.C  
N.C  
VCC  
/CAS  
DQMB4  
DQMB5  
N.C  
/RAS  
VSS  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
84  
VSS  
127  
128  
129  
130  
131  
132  
133  
134  
135  
136  
137  
138  
139  
140  
141  
142  
143  
144  
145  
146  
147  
148  
149  
150  
151  
152  
153  
154  
155  
156  
157  
158  
159  
160  
161  
162  
163  
164  
165  
166  
167  
168  
VSS  
CKE0  
N.C  
DQMB6  
DQMB7  
N.C  
VCC  
N.C  
N.C  
N.C  
N.C  
VSS  
DQ48  
DQ49  
DQ50  
DQ51  
VCC  
DQ52  
N.C  
2
86  
N.C  
3
4
5
6
7
8
9
87  
88  
89  
90  
91  
92  
93  
94  
95  
96  
97  
98  
/CS2  
DQMB2  
DQMB3  
N.C  
VCC  
N.C  
N.C  
N.C  
N.C  
VSS  
DQ16  
DQ17  
DQ18  
DQ19  
VCC  
DQ20  
N.C  
N.C  
N.C  
VSS  
DQ21  
DQ22  
DQ23  
VSS  
DQ24  
DQ25  
DQ26  
DQ27  
VCC  
DQ28  
DQ29  
DQ30  
DQ31  
VSS  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
99  
100  
101  
102  
103  
104  
105  
106  
107  
108  
109  
110  
111  
112  
113  
114  
115  
116  
117  
118  
119  
120  
121  
122  
123  
124  
125  
126  
N.C  
N.C  
VSS  
N.C  
VSS  
N.C  
DQ53  
DQ54  
DQ55  
VSS  
DQ56  
DQ57  
DQ58  
DQ59  
VCC  
DQ60  
DQ61  
DQ62  
DQ63  
VSS  
N.C  
VCC  
/WE  
DQMB0  
DQMB1  
/CS0  
N.C  
VSS  
A0  
A2  
A4  
A6  
A8  
A10  
A1  
A3  
A5  
A7  
A9  
BA0  
A11  
VCC  
CLK1  
N.C  
CLK2  
N.C  
WP  
SDA  
SCL  
CLK3  
N.C  
SA0  
SA1  
SA2  
BA1  
VCC  
VCC  
CLK0  
VCC  
VCC  
Pin Name  
Function  
Pin Name  
Function  
VCC  
VSS  
CLK#  
Power Supply (3.3V)  
Ground (0V)  
System Clock  
/WE  
DQMB#  
DQ#  
WP  
Write Enable  
Data Input / Output Mask  
Data Input / Output  
Write Protect  
/CS#  
Chip Select  
CKE#  
A0-A11  
BA0, BA1  
/RAS  
Clock Enable  
Address  
Bank Select Address  
Row Address Strobe  
Column Address Strobe  
SDA  
SCL  
SA#  
Data I/O for SPD  
CLK input for SPD  
Socket Position Address for SPD  
No Connection  
N.C  
/CAS  
Page 3/11  
MK31VT864A-8YC 98.07.17  
SERIAL PRESENCE DETECT  
Byte  
SPD  
Remark  
Notes  
No.  
Hex Value  
Defines the number of bytes written into  
SPD memory  
0
80  
128 byte  
1
2
08  
04  
0C  
Total number of bytes of SPD memory  
Fundamental memory type  
Number of rows  
256 byte  
SDRAM  
12 rows  
3
4
09  
01  
40  
00  
Number of columns  
9 columns  
1 bank  
64 bits  
5
Number of module banks  
Data width of this assembly  
... Data width continuation  
Voltage interface level  
6
7
0
8
01  
LVTTL  
9
80  
60  
00  
80  
08  
00  
01  
8F  
04  
06  
01  
01  
00  
0E  
C0  
A0  
00  
00  
1E  
10  
14  
30  
10  
20  
10  
20  
10  
00-00  
12  
49  
Cycle time (CL=3)  
CL=3 tCC3=8ns  
CL=3 tAC3=6ns  
None Parity  
Normal / Self  
x8  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36-61  
62  
63  
64-71  
72  
Access time from CLK (CL=3)  
DIMM configuration type  
Refresh rate / type  
Primary SDRAM width  
Error checking SDRAM width  
Minimum CLK delay  
Burst lengths supported  
Number of banks on each SDRAM  
/CAS latency  
/CS latency  
/WE latency  
SDRAM module attributes  
SDRAM device attributes : General  
Cycle time (CL=2)  
Access time from CLK (CL=2)  
Cycle time (CL=1)  
Access time from CLK (CL=1)  
Minimum ROW pulse width  
/RAS to /RAS bank delay  
/RAS to /CAS delay  
Minimum /RAS precharge time  
Density of each bank on module  
Command and address signal input setup time  
Command and address signal input hold time  
tCCD: 1 CLK  
1, 2, 4, 8, F  
4 banks  
2, 3  
0
0
CL=2 tCC2=12ns  
CL=2 tAC2=10ns  
Not support  
Not support  
tRP=30ns  
tRRD=16ns  
tRCD=20ns  
tRAS=48ns  
64MB  
2ns  
1ns  
2ns  
1ns  
Data signal input setup time  
Data signal input hold time  
R.F.U  
1.2  
SPD data revision code  
Checksum for byte 0-62  
Manufacturer’s JEDEC ID code  
Manufacturing location  
41,45,20,20,20,20,20,20  
01 / 06  
73-90 4D,4B,33,31,56,54,38,36,34, Manufacturer’s part number  
41,2D,38,59,43,20,20,20,202  
MK31VT864A-8YC  
91, 92  
93-125  
126  
20, 20  
00-00  
64  
A5  
FF-FF  
Revision code  
R.F.U  
Intel specification frequency  
Intel specification /CAS latency  
Unused storage locations  
100MHz  
(CLK0-2, CL=3)  
127  
128-255  
Page 4/11  
MK31VT864A-8YC 98.07.17  
ELECTRICAL CHARACTERISTICS  
Absolute Maximum Ratings  
Rating  
Voltage on any pin relative to Vss  
Vcc supply voltage  
Symbol  
Value  
Unit  
V
VIN, VOUT  
-0.5 to Vcc+0.5  
-0.5 to 4.6  
V
, V  
cc cc  
Q
V
Storage temperature  
T
- 55 to 125  
°C  
stg  
Power dissipation  
PD  
*
8
W
Short circuit current  
IOS  
50  
mA  
°C  
Operating temperature  
T
0 to 70  
opr  
*: Ta=25  
°C  
Recommended Operating Conditions  
(Voltages referenced to Vss = 0V)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Power supply voltage  
Input high voltage  
Input low voltage  
Vcc, VccQ  
VIH  
3.0  
2.0  
3.3  
3.6  
Vcc+0.3  
0.8  
V
V
V
-
-
VIL  
-0.3  
Capacitance  
(Vcc=3.3V ± 0.3V, Ta=25 °C f=1MHz)  
Parameter  
Symbol  
CIN1  
CIN2  
Max.  
54  
34  
Unit  
pF  
pF  
pF  
pF  
pF  
pF  
Input capacitance (A0-A11, BA0, BA1, /RAS, /CAS, /WE)  
Input capacitance (/CS0, /CS2)  
Input capacitance (DQMB0-DQMB7)  
Input capacitance (CKE0)  
CIN3  
16  
CIN4  
58  
I/O capacitance (DQ0-DQ63)  
CI/O  
18  
Input capacitance (CLK0, CLK2)  
CCLK  
50  
Page 5/11  
MK31VT864A-8YC 98.07.17  
DC CHARACTERISTICS  
(Vcc=3.3V ± 0.3V, Ta = 0 to 70 °C)  
Condition  
Others  
IOH = -2.0mA  
Module Spec.  
Unit  
Note  
Parameter  
Symbol  
CKE  
Min.  
Max.  
VOH  
VOL  
ILI  
Output High Voltage  
Output Low Voltage  
Input Leakage Current  
-
-
-
2.4  
-
-
V
V
I
OL = 2.0mA  
-
0.4  
40  
-40  
µA  
Output Leakage  
Current  
ILO  
-
-
-5  
5
µA  
Average Power Supply  
Current  
(Operating)  
tCC=min.  
tRC=min.  
No Burst  
ICC  
1
CKE V  
1, 2  
3
-
1000  
240  
48  
mA  
IH  
IH  
Power Supply Current  
(Stand by)  
ICC  
2
CKE V  
tCC=min.  
-
-
mA  
mA  
Average Power  
Supply Current  
(Clock Suspension)  
Average Power  
Supply Current  
(Active Stand by)  
Power Supply  
Current (Burst)  
Power Supply  
Current  
(Auto-Refresh)  
Average Power  
Supply Current  
(Self-Refresh)  
Average Power  
Supply Current  
(Power down)  
ICC  
3S  
CKE V  
tCC=min.  
2
IL  
CKE V  
/CS V  
IH  
,
ICC  
3
tCC=min.  
3
1, 2  
2
-
-
-
480  
1320  
1480  
mA  
mA  
mA  
IH  
ICC  
4
CKE V  
tCC=min.  
tCC=min.  
IH  
IH  
ICC  
5
CKE V  
t
RC=min.  
ICC  
6
tCC=min.  
tCC=min.  
CKE 0.2V  
-
-
8
mA  
mA  
ICC  
7
CKE V  
16  
IL  
Notes: 1.  
Measured with the output open.  
2.  
3.  
Address and data can be changed once or not be changed during one cycle.  
Address and data can be changed once or not be changed during two cycle.  
MODE SET ADDRESS KEYS  
Write Burst  
Write Burst  
Burst Write  
Single bit Write  
/CAS Latency  
A6 A5 A4 CL  
Burst Type  
BT  
Burst Length  
A2 A1 A0 BT=0  
Reserved Reserved  
A9  
0
1
A3  
0
1
BT=1  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved  
Reserved  
2
Sequential  
Interleave  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
2
4
8
2
4
8
3
Reserved  
Reserved  
Reserved  
Reserved  
Reserved Reserved  
Reserved Reserved  
Reserved Reserved  
Full page Reserved  
Note:  
A7, A8, A10, A11, BA0, BA1 and All should stay "L" during mode set cycle.  
Page 6/11  
MK31VT864A-8YC 98.07.17  
POWER ON SEQUENCE  
1. With inputs in NOP state, turn on the power supply and enter the system clock.  
2. After the V voltage has reached the specified level, take a pause of 200 s or more  
CC  
µ
with the input being NOP.  
3. Enter the precharge all bank command.  
4. Apply CBR auto-refresh eight or more times.  
5. Enter the mode register setting command.  
Page 7/11  
MK31VT864A-8YC 98.07.17  
AC CHARACTERISTIC  
(
)
Vcc=3.3V ± 0.3V, Ta = 0 to 70 °C  
NOTE 1, 2  
.
Module Spec.  
Unit Note  
Parameter  
Symbol  
Min.  
Max.  
Clock Cycle Time  
CL=3  
8
12  
-
-
ns  
ns  
t
CC  
CL=2  
CL=3  
CL=2  
-
Access Time from Clock  
6
ns  
3, 4  
3, 4  
t
AC  
-
10  
ns  
Clock "H" Pulse Time  
Clock "L" Pulse Time  
Input Setup Time  
Input Hold Time  
3
-
ns  
t
CH  
3
-
ns  
t
CL  
2
-
ns  
t
SI  
HI  
1
-
ns  
t
Output Low Impedance Time from Clock  
Output High Impedance Time from Clock  
Output Hold from Clock  
3
-
ns  
t
OLZ  
OHZ  
-
8
ns  
t
3
-
ns  
3
t
OH  
/RAS Cycle Time  
80  
30  
48  
20  
8
-
ns  
t
RC  
/RAS Precharge Time  
-
ns  
t
RP  
/RAS Active Time  
100,000  
ns  
t
RAS  
RCD  
/RAS to /CAS Delay Time  
Write Recovery Time  
-
-
ns  
t
ns  
t
WR  
/RAS to /RAS Bank Active Delay Time  
Refresh Time  
16  
-
-
ns  
t
RRD  
64  
-
ms  
ns  
t
REF  
PDE  
Power-down Exit Set-up Time  
Input Level Transition Time  
/CAS to /CAS Delay Time (Min)  
Clock Disable Time from CKE  
Data Output High Impedance Time from  
t
t +1CLK  
SI  
-
3
ns  
t
T
1
1
2
Cycle  
Cycle  
Cycle  
I
CCD  
I
CKE  
I
DOZ  
DQMB  
Data Input Mask Time from DQMB  
0
0
3
2
2
2
Cycle  
Cycle  
Cycle  
Cycle  
Cycle  
Cycle  
I
DOD  
Data Input Time from Write Command  
I
DWD  
Data Output High Inpedance  
CL=3  
CL=2  
I
ROH  
Time from Precharge Command  
Active Command Input Time from MODE  
Write Command Input Time from Output  
I
MRD  
t
OWD  
NOTES:  
1) AC measurements assume tT=1ns.  
2) The reference level for timing of input signals is 1.4V.  
3) This parameter is measured with a load circuit equivalent to 1 TTL load and 50pF  
(RLoad is 50ohm).  
4) An access time is measured at 1.4V.  
5) If tT is longer than 1ns, the reference level for timing of input signals are VIH and VIL.  
50Ω  
OUTPUT LOAD  
Page 8/11  
MK31VT864A-8YC 98.07.17  
FUNCTION TRUTH TABLE (Table1)(1/2)  
Current State  
/CS  
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
H
L
L
L
L
L
L
/RAS  
X
H
H
H
L
/CAS  
X
H
H
L
/WE BA  
ADDR  
X
Action  
Idle  
X
H
L
X
H
L
H
L
X
X
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
X
X
NOP  
NOP  
X
X
CA  
RA  
A10  
X
BA  
BA  
BA  
BA  
X
L
X
X
BA  
BA  
BA  
BA  
X
ILLEGAL 2  
ILLEGAL 2  
Row Active  
NOP 4  
H
H
L
L
L
L
X
H
H
H
L
Auto-Refresh or Self-Refresh 5  
L
OP Code Mode Register write  
Row Active  
X
H
L
X
X
NOP  
NOP  
CA, A10 Read  
CA, A10 Write  
L
H
H
L
X
H
H
L
RA  
A10  
X
X
X
ILLEGAL 2  
Precharge  
L
L
ILLEGAL  
Read  
X
H
H
H
H
L
X
X
NOP (Continue Row Active after Burst ends)  
NOP (Continue Row Active after Burst ends)  
Burst Stop  
BA  
BA  
BA  
BA  
BA  
X
X
CA, A10 Term Burst, start new Burst Read 3  
CA, A10 Term Burst, start new Burst Write 3  
L
H
H
L
X
H
H
L
RA  
A10  
X
X
X
ILLEGAL 2  
L
L
Term Burst, execute Row Precharge  
ILLEGAL  
Write  
X
H
H
H
H
L
X
X
NOP (Continue Row Active after Burst ends)  
NOP (Continue Row Active after Burst ends)  
Burst Stop  
BA  
BA  
BA  
BA  
BA  
X
X
CA, A10 Term Burst, start new Burst Read 3  
CA, A10 Term Burst, start new Burst Write 3  
L
H
H
L
X
H
H
L
L
H
L
X
H
H
L
L
H
L
RA  
A10  
X
X
X
ILLEGAL 2  
L
L
Term Burst, execute Row Precharge 3  
ILLEGAL  
NOP (Continue Burst to End and enter Row Precharge)  
Read with  
Auto Precharge  
X
H
H
H
H
L
X
X
NOP (Continue Burst to End and enter Row Precharge)  
BA  
BA  
X
BA  
X
X
ILLEGAL 2  
H
L
CA, A10 ILLEGAL 2  
X
ILLEGAL  
X
X
X
H
L
H
L
X
X
RA, A10 ILLEGAL 2  
L
X
X
X
X
ILLEGAL  
NOP (Continue Burst to End and enter Row Precharge)  
Write with  
Auto Precharge  
X
H
H
H
H
L
X
X
NOP (Continue Burst to End and enter Row Precharge)  
BA  
BA  
X
BA  
X
ILLEGAL 2  
CA, A10 ILLEGAL 2  
X
ILLEGAL  
RA, A10 ILLEGAL 2  
ILLEGAL  
L
X
Page 9/11  
MK31VT864A-8YC 98.07.17  
FUNCTION TRUTH TABLE (Table1)(2/2)  
Current State  
/CS  
H
L
/RAS  
X
H
H
H
L
/CAS  
X
H
H
L
/WE BA  
ADDR  
X
Action  
Precharge  
X
H
L
X
H
L
X
X
H
L
X
H
L
X
X
H
L
X
H
L
X
X
X
X
X
X
X
H
L
X
X
NOP Idle after t  
RP  
X
X
CA  
RA  
A10  
X
X
X
X
CA  
RA  
A10  
X
X
X
NOP Idle after t  
ILLEGAL 2  
ILLEGAL 2  
ILLEGAL 2  
NOP 4  
ILLEGAL  
NOP  
NOP  
RP  
L
L
L
L
L
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
L
L
L
L
H
L
BA  
BA  
BA  
BA  
X
H
H
L
X
H
H
L
H
H
L
X
H
H
L
H
H
L
X
H
L
H
L
X
H
H
L
L
L
Write  
Recovery  
X
H
H
H
L
X
X
BA  
BA  
BA  
BA  
X
ILLEGAL 2  
ILLEGAL 2  
ILLEGAL 2  
ILLEGAL 2  
ILLEGAL  
L
L
Row Active  
X
H
H
H
L
L
L
X
H
H
L
X
X
NOP Row Active after t  
NOP Row Active after t  
ILLEGAL 2  
RCD  
RCD  
BA  
BA  
BA  
BA  
X
X
X
X
X
X
X
X
X
X
CA  
RA  
A10  
X
X
X
X
X
X
X
ILLEGAL 2  
ILLEGAL 2  
ILLEGAL 2  
ILLEGAL  
Refresh  
NOP Idle after t  
NOP Idle after t  
ILLEGAL  
ILLEGAL  
ILLEGAL  
NOP  
NOP  
ILLEGAL  
RC  
RC  
L
Auto Resister  
Access  
X
H
H
H
L
X
X
L
L
L
X
X
X
X
X
X
ILLEGAL  
ILLEGAL  
X
ABBREVIATIONS  
RA = Row Address  
CA = Column Address  
BA = Bank Address  
AP = Auto Precharge  
NOP = No Operation command  
Notes:  
1. All inputs will be enabled when CKE is set high for at least 1 cycle prior to the inputs.  
2. Illegal to bank in specified state, but may be legal in some cases depending on the state of  
bank selection.  
3. Satisfy the timing of I  
and t  
to prevent bus contention.  
CCD  
WR  
4. NOP to bank precharging or in idle state. Precharges activated bank by BA or A10.  
5. Illegal if any bank is not idle.  
Page 10/11  
MK31VT864A-8YC 98.07.17  
FUNCTION TRUTH TABLE (CKE) (Table2)  
Current State(n) CKEn-1 CKEn  
/CS  
X
H
L
/RAS /CAS  
/WE  
X
X
H
L
ADDR  
X
Action  
INVALID  
Exit Self Refresh ABI  
Exit Self Refresh ABI  
ILLEGAL  
Self Refresh  
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
H
H
H
H
H
H
H
L
X
H
H
H
H
H
L
X
H
H
H
H
H
L
H
L
L
L
L
L
L
L
L
X
X
H
H
H
L
X
X
X
H
H
H
X
X
X
X
H
H
H
L
X
X
H
H
L
X
X
X
X
H
H
L
X
X
X
X
H
H
L
H
L
L
X
X
X
X
X
X
X
X
L
L
L
X
X
H
L
L
L
X
X
X
X
X
H
L
X
X
X
X
X
X
X
ILLEGAL  
ILLEGAL  
NOP (Maintain Self Refresh)  
INVALID  
Exit Power Down ABI  
Exit Power Down ABI  
ILLEGAL  
Power Down  
X
X
X
X
X
H
L
X
X
X
X
X
X
X
ILLEGAL  
L
ILLEGAL 6  
X
X
H
L
L
L
L
L
L
X
X
X
X
X
NOP (Continue power down mode)  
Refer to Table 1  
Enter Power Down  
Enter Power Down  
ILLEGAL  
ILLEGAL  
ILLEGAL  
Enter Self Refresh  
ILLEGAL  
NOP  
All Banks idle 6  
(ABI)  
X
L
X
X
L
L
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Any State  
Other than  
Listed Above  
H
H
L
H
L
H
L
Refer to Operations in Table 1  
Begin Clock Suspend Next Cycle  
Enable Clock of Next Cycle  
Continue Clock Suspension  
L
X
Notes:  
6. Power-down and self refresh can be entered only when all the banks are in an idle state.  
Page 11/11  

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