TJA1021TK/20 [NXP]

LIN 2.1/SAE J2602 transceiver; 2.1 LIN / SAE J2602收发器
TJA1021TK/20
型号: TJA1021TK/20
厂家: NXP    NXP
描述:

LIN 2.1/SAE J2602 transceiver
2.1 LIN / SAE J2602收发器

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TJA1021  
LIN 2.1/SAE J2602 transceiver  
Rev. 05 — 22 October 2009  
Product data sheet  
1. General description  
The TJA1021 is the interface between the Local Interconnect Network (LIN) master/slave  
protocol controller and the physical bus in a LIN. It is primarily intended for in-vehicle  
sub-networks using baud rates from 1 kBd up to 20 kBd and is LIN 2.1/SAE J2602  
compliant. The TJA1021 is pin-to-pin compatible with the TJA1020 with an improved  
ElectroStatic Discharge (ESD) specification.  
The transmit data stream of the protocol controller at the transmit data input (TXD) is  
converted by the TJA1021 into a bus signal with optimized slew rate and wave shaping to  
minimize ElectroMagnetic Emission (EME). The LIN bus output pin is pulled HIGH via an  
internal termination resistor. For a master application, an external resistor in series with a  
diode should be connected between pin INH or pin VBAT and pin LIN. The receiver detects  
the data stream at the LIN bus input pin and transfers it via pin RXD to the microcontroller.  
In Sleep mode, the power consumption of the TJA1021 is very low. In failure modes, the  
power consumption is reduced to a minimum.  
2. Features  
2.1 General  
I LIN 2.1/SAE J2602 compliant  
I Baud rate up to 20 kBd  
I Very low ElectroMagnetic Emission (EME)  
I High ElectroMagnetic Immunity (EMI)  
I Passive behavior in unpowered state  
I Input levels compatible with 3.3 V and 5 V devices  
I Integrated termination resistor for LIN slave applications  
I Wake-up source recognition (local or remote)  
I Supports K-line like functions  
I Pin-to-pin compatible with TJA1020  
2.2 Low power management  
I Very low current consumption in Sleep mode with local and remote wake-up  
2.3 Protection mechanisms  
I High ESD robustness: ±6 kV according to IEC 61000-4-2 for pins LIN, VBAT and  
WAKE_N  
I Transmit data (TXD) dominant time-out function  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
I Bus terminal and battery pin protected against transients in the automotive  
environment (ISO 7637)  
I Bus terminal short-circuit proof to battery and ground  
I Thermally protected  
3. Quick reference data  
Table 1.  
Quick reference data  
VBAT = 5.5 V to 27 V; Tvj = 40 °C to +150 °C; RL(LIN-VBAT) = 500 ; all voltages are defined with respect to ground; positive  
currents flow into the IC; typical values are given at VBAT = 12 V; unless otherwise specified.[1]  
Symbol Parameter  
Conditions  
Min  
0.3  
2
Typ  
Max Unit  
VBAT  
IBAT  
supply voltage on pin VBAT with respect to GND  
-
+40  
10  
V
supply current on pin VBAT Sleep mode; VLIN = VBAT; VWAKE_N = VBAT;  
VTXD = 0 V; VSLP_N = 0 V  
7
µA  
Standby mode; bus recessive  
VINH = VBAT; VLIN = VBAT; VWAKE_N = VBAT  
150  
300  
300  
1
450  
800  
800  
2
1000 µA  
1200 µA  
1600 µA  
;
VTXD = 0 V; VSLP_N = 0 V  
Standby mode; bus dominant VBAT = 12 V;  
V
V
INH = 12 V; VLIN = 0 V VWAKE_N = 12 V;  
TXD = 0 V; VSLP_N = 0 V  
Normal mode; bus recessive VINH = VBAT  
;
V
LIN = VBAT; VWAKE_N = VBAT  
;
VTXD = 5 V; VSLP_N = 5 V  
Normal mode; bus dominant;  
VBAT = 12 V; VINH = 12 V; VWAKE_N = 12 V;  
TXD = 0 V; VSLP_N = 5 V  
4
mA  
V
V
VLIN  
Tvj  
voltage on pin LIN  
with respect to GND, VBAT and VWAKE_N  
40  
40  
-
-
+40  
[2]  
virtual junction temperature  
+150 °C  
[1] All parameters are guaranteed by design over the virtual junction temperature range. Products are 100 % tested at 125 °C ambient  
temperature on wafer level (pre-testing). Cased products are 100 % tested at 25 °C ambient temperature (final testing). Both pre-testing  
and final testing use correlated test conditions to cover the specified temperature and power supply voltage range.  
[2] Junction temperature in accordance with IEC 60747-1. An alternative definition is: Tvj = Tamb + P × Rth(vj-a), where Rth(vj-a) is a fixed  
value. The rating for Tvj limits the allowable combinations of power dissipation (P) and ambient temperature (Tamb).  
4. Ordering information  
Table 2.  
Ordering information  
Type number[1]  
Package  
Name  
SO8  
Description  
Version  
TJA1021T/10;  
TJA1021T/20  
plastic small outline package; 8 leads; body width 3.9 mm  
SOT96-1  
TJA1021TK/20  
HVSON8  
plastic thermal enhanced very small outline package; 8 leads; body width  
3 mm; lead pitch 0.65 mm  
SOT782-1  
[1] TJA1021T/10: for the low slope version that supports baud rates up to 10.4 kBd (SAE J2602);  
TJA1021T/20 and TJA1021TK/20: for the normal slope version that supports baud rates up to 20 kBd.  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
2 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
5. Block diagram  
7
V
BAT  
WAKE-UP  
TIMER  
3
WAKE_N  
CONTROL  
8
INH  
SLEEP/  
NORMAL  
TIMER  
TEMPERATURE  
PROTECTION  
2
4
SLP_N  
TXD  
6
LIN  
TXD  
TIME-OUT  
TIMER  
TJA1021  
BUS  
TIMER  
1
RXD  
RXD/  
INT  
5
FILTER  
GND  
001aae066  
Fig 1. Block diagram  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
3 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
6. Pinning information  
6.1 Pinning  
1
2
3
4
8
7
6
5
RXD  
SLP_N  
WAKE_N  
TXD  
INH  
V
BAT  
TJA1021T  
TJA1021TK  
LIN  
GND  
015aaa106  
Fig 2. Pin configuration diagram  
6.2 Pin description  
Table 3.  
Pin description  
Symbol  
Pin  
Description  
RXD  
1
receive data output (open-drain); active LOW after a wake-up  
event  
SLP_N  
2
sleep control input (active LOW); controls inhibit output; resets  
wake-up source flag on TXD and wake-up request on RXD  
WAKE_N  
TXD  
3
4
5
6
7
8
local wake-up input (active LOW); negative edge triggered  
transmit data input; active LOW output after a local wake-up event  
GND  
LIN  
ground  
LIN bus line input/output  
battery supply  
VBAT  
INH  
battery related inhibit output for controlling an external voltage  
regulator; active HIGH after a wake-up event  
7. Functional description  
The TJA1021 is the interface between the LIN master/slave protocol controller and the  
physical bus in a Local Interconnect Network (LIN). The TJA1021 is LIN 2.1/SAE J2602  
compliant and provides optimum ElectroMagnetic Compatibility (EMC) performance due  
to wave shaping of the LIN output.  
The /20 versions of the TJA1021 are optimized for the maximum specified LIN  
transmission speed of 20 kBd; the /10 version of the TJA1021 is optimized for the LIN  
transmission speed of 10.4 kBd as specified by the SAE J2602.  
7.1 Operating modes  
The TJA1021 supports modes for normal operation (Normal mode), power-up (Power-on  
mode) and very-low-power operation (Sleep mode). An intermediate wake-up mode  
between Sleep and Normal modes is also supported (Standby mode). Figure 3 shows the  
state diagram.  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
4 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
Power-on  
INH: high  
t
> t  
(SLP_N = 1)  
gotonorm  
TERM. = 30 k  
RXD: floating  
TXD: weak pull-down  
Transmitter: off  
Normal  
INH: high  
TERM. = 30 kΩ  
RXD: receive data output  
TXD: transmit data input  
Transmitter: on  
switching on V  
BAT  
t
> t  
gotonorm  
(SLP_N = 1)  
t
> t  
gotonorm  
(SLP_N = 1)  
t
> t  
gotosleep  
(SLP_N = 0)  
Standby  
INH: high  
TERM. = 30 kΩ  
RXD: low  
Sleep  
INH: floating  
TERM. = high ohmic  
RXD: floating  
TXD: weak pull-down  
Transmitter: off  
TXD: wake source output  
Transmitter: off  
t
> t  
WAKE_N  
(WAKE_N = 0; after 10)  
or t  
> t  
(LIN = 01; after LIN = 0)  
BUS  
001aae073  
TERM.: slave termination resistor, connected between pins LIN and VBAT  
.
Fig 3. State diagram  
Table 4.  
Mode  
Operating modes  
SLP_N TXD (output)  
RXD  
INH  
Transmitter Remarks  
Sleep mode  
0
weak pull-down  
floating  
floating off  
no wake-up request  
detected  
Standby[1]  
mode  
0
weak pull-down if  
remote wake-up;  
strong pull-down if  
local wake-up[2]  
LOW[3]  
HIGH  
off  
wake-up request  
detected; in this mode  
the microcontroller  
can read the wake-up  
source: remote or  
local wake-up  
[2][3][4]  
Normal mode  
1
HIGH: recessive state HIGH: recessive state HIGH  
LOW: dominant state LOW: dominant state  
Normal mode  
off  
[5]  
Power-on mode 0  
weak pull-down  
floating  
HIGH  
[1] Standby mode is entered automatically upon any local or remote wake-up event during Sleep mode. Pin INH and the 30 ktermination  
resistor at pin LIN are switched on.  
[2] The internal wake-up source flag (set if a local wake-up did occur and fed to pin TXD) will be reset after a positive edge on pin SLP_N.  
[3] The wake-up interrupt (on pin RXD) is released after a positive edge on pin SLP_N.  
[4] Normal mode is entered after a positive edge on SLP_N. As long as TXD is LOW, the transmitter is off. In the event of a short-circuit to  
ground on pin TXD, the transmitter will be disabled.  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
5 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
[5] Power-on mode is entered after switching on VBAT  
.
7.2 Sleep mode  
This mode is the most power-saving mode of the TJA1021. Despite its extreme low  
current consumption, the TJA1021 can still be woken up remotely via pin LIN, or woken up  
locally via pin WAKE_N, or activated directly via pin SLP_N. Filters at the inputs of the  
receiver (LIN), of pin WAKE_N and of pin SLP_N prevent unwanted wake-up events due  
to automotive transients or EMI. All wake-up events have to be maintained for a certain  
time period (twake(dom)LIN, twake(dom)WAKE_N and tgotonorm).  
Sleep mode is initiated by a falling edge on pin SLP_N in Normal mode. To enter Sleep  
mode successfully (INH becomes floating), the sleep command (pin SLP_N = LOW) must  
be maintained for at least tgotosleep  
.
In Sleep mode the internal slave termination between pins LIN and VBAT is disabled to  
minimize the power dissipation in the event that pin LIN is short-circuited to ground. Only a  
weak pull-up between pins LIN and VBAT is present.  
Sleep mode can be activated independently from the actual level on pin LIN, pin TXD or  
pin WAKE_N. So it is guaranteed that the lowest power consumption is achievable even in  
case of a continuous dominant level on pin LIN or a continuous LOW on pin WAKE_N.  
When VBAT drops below the power-on-reset threshold Vth(POR)L, the TJA1021 enters  
Sleep mode.  
7.3 Standby mode  
Standby mode is entered automatically whenever a local or remote wake-up occurs while  
the TJA1021 is in Sleep mode. These wake-up events activate pin INH and enable the  
slave termination resistor at the pin LIN. As a result of the HIGH condition on pin INH the  
voltage regulator and the microcontroller can be activated.  
Standby mode is signalled by a LOW-level on pin RXD which can be used as an interrupt  
for the microcontroller.  
In Standby mode (pin SLP_N is still LOW), the condition of pin TXD (weak pull-down or  
strong pull-down) indicates the wake-up source: weak pull-down for a remote wake-up  
request and strong pull-down for a local wake-up request.  
Setting pin SLP_N HIGH during Standby mode results in the following events:  
An immediate reset of the wake-up source flag; thus releasing the possible strong  
pull-down at pin TXD before the actual mode change (after tgotonorm) is performed  
A change into Normal mode if the HIGH level on pin SLP_N has been maintained for  
a certain time period (tgotonorm  
)
An immediate reset of the wake-up request signal on pin RXD  
7.4 Normal mode  
In Normal mode the TJA1021 is able to transmit and receive data via the LIN bus line. The  
receiver detects the data stream at the LIN bus input pin and transfers it via pin RXD to the  
microcontroller (see Figure 1): HIGH at a recessive level and LOW at a dominant level on  
the bus. The receiver has a supply-voltage related threshold with hysteresis and an  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
6 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
integrated filter to suppress bus line noise. The transmit data stream of the protocol  
controller at the TXD input is converted by the transmitter into a bus signal with optimized  
slew rate and wave shaping to minimize EME. The LIN bus output pin is pulled HIGH via  
an internal slave termination resistor. For a master application an external resistor in  
series with a diode should be connected between pin INH or VBAT on one side and pin LIN  
on the other side (see Figure 6).  
When in Sleep, Standby or Power-up mode, the TJA1021 enters Normal mode whenever  
a HIGH level on pin SLP_N is maintained for a time of at least tgotonorm  
.
The TJA1021 switches to Sleep mode in case of a LOW-level on pin SLP_N, maintained  
for a time of at least tgotosleep  
.
7.5 Wake-up  
When VBAT exceeds the power-on-reset threshold voltage Vth(POR)H, the TJA1021 enters  
Power-on mode. Though the TJA1021 is powered-up and INH is HIGH, both the  
transmitter and receiver are still inactive. If SLP_N = 1 for t > tgotonorm, the TJA1021 enters  
Normal mode.  
There are three ways to wake-up a TJA1021 which is in Sleep mode:  
1. Remote wake-up via a dominant bus state of at least twake(dom)LIN  
2. Local wake-up via a negative edge at pin WAKE_N  
3. Mode change (pin SLP_N is HIGH) from Sleep mode to Normal mode  
7.6 Remote and local wake-up  
A falling edge at pin LIN followed by a LOW level maintained for a certain time period  
(twake(dom)LIN) and a rising edge at pin LIN respectively (see Figure 4) results in a remote  
wake-up. It should be noted that the time period twake(dom)LIN is measured either in Normal  
mode while TXD is HIGH, or in Sleep mode irrespective of the status of pin TXD.  
A falling edge at pin WAKE_N followed by a LOW level maintained for a certain time  
period (twake(dom)WAKE_N) results in a local wake-up. The pin WAKE_N provides an internal  
pull-up towards pin VBAT. In order to prevent EMI issues, it is recommended to connect an  
unused pin WAKE_N to pin VBAT  
.
After a local or remote wake-up, pin INH is activated (it goes HIGH) and the internal slave  
termination resistor is switched on. The wake-up request is indicated by a LOW active  
wake-up request signal on pin RXD to interrupt the microcontroller.  
7.7 Wake-up via mode transition  
It is also possible to set pin INH HIGH with a mode transition towards Normal mode via pin  
SLP_N. This is useful for applications with a continuously powered microcontroller.  
7.8 Wake-up source recognition  
The TJA1021 can distinguish between a local wake-up request on pin WAKE_N and a  
remote wake-up request via a dominant bus state. 'A local wake-up request sets the  
wake-up source flag. The wake-up source can be read on pin TXD in the Standby mode. If  
an external pull-up resistor on pin TXD to the power supply voltage of the microcontroller  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
7 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
has been added, a HIGH level indicates a remote wake-up request (weak pull-down at pin  
TXD) and a LOW level indicates a local wake-up request (strong pull-down at pin TXD;  
much stronger than the external pull-up resistor).  
The wake-up request flag (signalled on pin RXD) as well as the wake-up source flag  
(signalled on pin TXD) are reset immediately after the microcontroller sets pin SLP_N  
HIGH.  
7.9 TXD dominant time-out function  
A TXD dominant time-out timer circuit prevents the bus line from being driven to a  
permanent dominant state (blocking all network communication) if pin TXD is forced  
permanently LOW by a hardware and/or software application failure. The timer is triggered  
by a negative edge on pin TXD. If the duration of the LOW-level on pin TXD exceeds the  
internal timer value (tto(dom)TXD), the transmitter is disabled, driving the bus line into a  
recessive state. The timer is reset by a positive edge on pin TXD.  
7.10 Fail-safe features  
Pin TXD provides a pull-down to GND in order to force a predefined level on input pin TXD  
in case the pin TXD is unsupplied.  
Pin SLP_N provides a pull-down to GND in order to force the transceiver into Sleep mode  
in case the pin SLP_N is unsupplied.  
Pin RXD is set floating in case of lost power supply on pin VBAT  
.
The current of the transmitter output stage is limited in order to protect the transmitter  
against short circuit to pins VBAT or GND.  
A loss of power (pins VBAT and GND) has no impact on the bus line and the  
microcontroller. There are no reverse currents from the bus. The LIN transceiver can be  
disconnected from the power supply without influencing the LIN bus.  
The output driver at pin LIN is protected against overtemperature conditions. If the  
junction temperature exceeds the shutdown junction temperature Tj(sd), the thermal  
protection circuit disables the output driver. The driver is enabled again when the junction  
temperature has dropped below Tj(sd) and a recessive level is present at pin TXD.  
If VBAT drops below Vth(VBATL)L, a protection circuit disables the output driver. The driver is  
enabled again when VBAT > Vth(VBATL)H and a recessive level is present at pin TXD.  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
8 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
LIN recessive  
V
BAT  
0.6V  
BAT  
V
0.4V  
t
dom(LIN)  
LIN  
BAT  
LIN dominant  
ground  
sleep mode  
standby mode  
001aae071  
Fig 4. Remote wake-up behavior  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
9 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
8. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are referenced to pin GND; unless  
otherwise specified. Positive currents flow into the IC.  
Symbol  
VBAT  
Parameter  
Conditions  
Min  
0.3  
0.3  
0.3  
0.3  
0.3  
0.3  
0.3  
40  
Max  
+40  
+6  
Unit  
V
supply voltage on pin VBAT  
voltage on pin TXD  
with respect to GND  
ITXD no limitation  
VTXD  
V
ITXD < 500 µA  
+7  
V
VRXD  
voltage on pin RXD  
IRXD no limitation  
+6  
V
IRXD < 500 µA  
+7  
V
VSLP_N  
voltage on pin SLP_N  
ISLP_N no limitation  
ISLP_N < 500 µA  
+6  
V
+7  
V
VLIN  
voltage on pin LIN  
with respect to GND, VBAT and VWAKE_N  
+40  
+40  
-
V
VWAKE_N  
IWAKE_N  
voltage on pin WAKE_N  
current on pin WAKE_N  
0.3  
15  
V
only relevant if VWAKE_N < VGND 0.3;  
mA  
current will flow into pin GND  
VINH  
IO(INH)  
Tvj  
voltage on pin INH  
0.3  
50  
40  
55  
VBAT +0.3  
+15  
V
output current on pin INH  
virtual junction temperature  
storage temperature  
mA  
°C  
°C  
[1]  
+150  
Tstg  
+150  
VESD  
electrostatic discharge voltage  
according to IEC 61000-4-2  
human body model  
[2]  
[3]  
[3]  
-
-
kV  
kV  
kV  
V
on pins WAKE_N, LIN, VBAT and INH  
8  
+8  
on pins RXD, SLP_N and TXD  
2  
+2  
charge device model  
machine model  
all pins  
all pins  
750  
200  
+750  
+200  
[4]  
V
[1] Junction temperature in accordance with IEC 60747-1. An alternative definition is: Tj = Tamb + P × Rth(j-a), where Rth(j-a) is a fixed value.  
The rating for Tvj limits the allowable combinations of power dissipation (P) and ambient temperature (Tamb).  
[2] Equivalent to discharging a 150 pF capacitor through a 330 resistor. ESD performance of ±6 kV for pins LIN, VBAT and WAKE_N is  
verified by an external test house.  
[3] Equivalent to discharging a 100 pF capacitor through a 1.5 kresistor.  
[4] Equivalent to discharging a 200 pF capacitor through a 10 resistor and a 0.75 µH coil.  
9. Thermal characteristics  
Table 6.  
Thermal characteristics  
According to IEC 60747-1.  
Symbol  
Parameter  
Conditions  
Typ  
145  
50  
Unit  
K/W  
K/W  
Rth(j-a)  
thermal resistance from junction to ambient  
SO8 package; in free air  
HVSON8 package; in free air  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
10 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
10. Static characteristics  
Table 7.  
Static characteristics  
VBAT = 5.5 V to 27 V; Tvj = 40 °C to +150 °C; RL(LIN-VBAT) = 500 ; all voltages are defined with respect to ground; positive  
currents flow into the IC; typical values are given at VBAT = 12 V; unless otherwise specified.[1]  
Symbol  
Supply  
IBAT  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
supply current on pin  
VBAT  
Sleep mode;  
2
7
10  
µA  
VLIN = VBAT; VWAKE_N = VBAT  
;
VTXD = 0 V; VSLP_N = 0 V  
Standby mode; bus recessive;  
VINH = VBAT; VLIN = VBAT  
150  
300  
300  
1
450  
800  
800  
2
1000  
1200  
1600  
4
µA  
µA  
µA  
mA  
;
V
V
WAKE_N = VBAT; VTXD = 0 V;  
SLP_N = 0 V  
Standby mode; bus dominant;  
VBAT = 12 V; VINH = 12 V;  
VLIN = 0 V; VWAKE_N = 12 V;  
VTXD = 0 V; VSLP_N = 0 V  
Normal mode; bus recessive;  
V
V
V
INH = VBAT; VLIN = VBAT;  
WAKE_N = VBAT; VTXD = 5 V;  
SLP_N = 5 V  
Normal mode; bus dominant;  
VBAT = 12 V; VINH = 12 V;  
VWAKE_N = 12 V; VTXD = 0 V;  
VSLP_N = 5 V  
Power-on reset  
Vth(POR)L  
LOW-level power-on  
reset threshold voltage  
power-on reset  
1.6  
3.1  
3.4  
0.3  
4.4  
4.7  
0.3  
3.9  
4.3  
1
V
V
V
V
V
V
Vth(POR)H  
Vhys(POR)  
Vth(VBATL)L  
Vth(VBATL)H  
Vhys(VBATL)  
HIGH-level power-on  
reset threshold voltage  
2.3  
power-on reset  
hysteresis voltage  
0.05  
3.9  
LOW-level VBAT LOW  
threshold voltage  
4.7  
4.9  
1
HIGH-level VBAT LOW  
threshold voltage  
4.2  
VBAT LOW hysteresis  
voltage  
0.05  
Pin TXD  
VIH  
HIGH-level input  
voltage  
2
-
7
V
VIL  
LOW-level input voltage  
hysteresis voltage  
0.3  
50  
-
+0.8  
400  
V
Vhys  
200  
500  
mV  
kΩ  
RPD(TXD)  
pull-down resistance on VTXD = 5 V  
pin TXD  
140  
1200  
IIL  
LOW-level input current VTXD = 0 V  
5  
-
-
+5  
-
µA  
IOL  
LOW-level output  
current  
local wake-up request;  
Standby mode; VWAKE_N = 0 V;  
LIN = VBAT; VTXD = 0.4 V  
1.5  
mA  
V
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
11 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
Table 7.  
Static characteristics …continued  
VBAT = 5.5 V to 27 V; Tvj = 40 °C to +150 °C; RL(LIN-VBAT) = 500 ; all voltages are defined with respect to ground; positive  
currents flow into the IC; typical values are given at VBAT = 12 V; unless otherwise specified.[1]  
Symbol  
Pin SLP_N  
VIH  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
HIGH-level input  
voltage  
2
-
7
V
VIL  
LOW-level input voltage  
hysteresis voltage  
0.3  
50  
-
+0.8  
400  
V
Vhys  
200  
500  
mV  
kΩ  
RPD(SLP_N)  
pull-down resistance on VSLP_N = 5 V  
pin SLP_N  
140  
1200  
IIL  
LOW-level input current VSLP_N = 0 V  
5  
0
+5  
µA  
Pin RXD (open-drain)  
IOL LOW-level output  
Normal mode;  
VLIN = 0 V; VRXD = 0.4 V  
1.5  
-
-
mA  
current  
ILH  
HIGH-level leakage  
current  
Normal mode;  
LIN = VBAT; VRXD = 5 V  
5  
0
+5  
µA  
V
Pin WAKE_N  
VIH  
HIGH-level input  
voltage  
VBAT 1  
-
VBAT + 0.3  
V
VIL  
LOW-level input voltage  
0.3  
30  
-
V
BAT 3.3  
V
Ipu(L)  
LOW-level pull-up  
current  
VWAKE_N = 0 V  
12  
1  
µA  
ILH  
HIGH-level leakage  
current  
VWAKE_N = 27 V; VBAT = 27 V  
5  
0
+5  
µA  
Pin INH  
Rsw(VBAT-INH) switch-on resistance  
Standby; Normal and Power-on  
-
20  
0
50  
+5  
between pins VBAT and modes; IINH = 15 mA; VBAT = 12 V  
INH  
ILH  
HIGH-level leakage  
current  
Sleep mode;  
INH = 27 V; VBAT = 27 V  
5  
µA  
V
Pin LIN  
IBUS_LIM  
current limitation for  
driver dominant state  
VBAT = 18 V; VLIN = 18 V;  
TXD = 0 V  
40  
-
100  
mA  
V
Rpu  
pull-up resistance  
Sleep mode; VSLP_N = 0 V  
50  
-
160  
-
250  
1
kΩ  
µA  
IBUS_PAS_rec  
receiver recessive input VLIN = 27 V; VBAT = 5.5 V;  
leakage current TXD = 5 V  
V
IBUS_PAS_dom receiver dominant input Normal mode; VTXD = 5 V;  
600  
-
-
µA  
leakage current  
including pull-up  
resistor  
VLIN = 0 V; VBAT = 12 V  
[2][3]  
VSerDiode  
IL(log)  
voltage drop at the  
serial diodes  
in pull-up path with Rslave  
;
0.4  
750  
-
-
-
-
1.0  
+10  
1
V
ISerDiode = 10 µA  
loss of ground leakage VBAT = 27 V; VLIN = 0 V  
current  
µA  
µA  
IL(lob)  
loss of battery leakage VBAT = 0 V; VLIN = 27 V  
current  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
12 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
Table 7.  
Static characteristics …continued  
VBAT = 5.5 V to 27 V; Tvj = 40 °C to +150 °C; RL(LIN-VBAT) = 500 ; all voltages are defined with respect to ground; positive  
currents flow into the IC; typical values are given at VBAT = 12 V; unless otherwise specified.[1]  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Vth(dom)RX  
receiver dominant  
threshold voltage  
-
-
0.4VBAT  
V
Vth(rec)RX  
Vth(RX)cntr  
Vth(hys)RX  
Rslave  
receiver recessive  
threshold voltage  
0.6VBAT  
-
-
V
center receiver  
threshold voltage  
Vth(RX)AV  
(Vth(rec)RX + Vth(dom)RX) / 2  
=
0.475VBAT 0.5VBAT 0.525VBAT  
V
receiver hysteresis  
threshold voltage  
Vth(hys)RX = Vth(rec)RX Vth(dom)RX  
-
-
0.175VBAT  
47  
V
slave resistance  
connected between pins LIN and  
20  
30  
kΩ  
VBAT; VLIN = 0 V; VBAT = 12 V  
[2][3]  
CLIN  
capacitance on pin LIN  
-
-
-
-
30  
pF  
V
Vo(dom)  
dominant output  
voltage  
Normal mode; VTXD = 0 V;  
BAT = 7.0 V  
1.4  
V
Normal mode; VTXD = 0 V;  
BAT = 18 V  
-
-
2.0  
V
V
Thermal shutdown  
Tj(sd) shutdown junction  
temperature  
[2][3]  
150  
175  
200  
°C  
[1] All parameters are guaranteed by design over the virtual junction temperature range. Products are 100 % tested at 125 °C ambient  
temperature on wafer level (pre-testing). Cased products are 100 % tested at 25 °C ambient temperature (final testing). Both pre-testing  
and final testing use correlated test conditions to cover the specified temperature and power supply voltage range.  
[2] Guaranteed by design.  
[3] Not tested.  
11. Dynamic characteristics  
Table 8.  
Dynamic characteristics  
VBAT = 5.5 V to 18 V; Tvj = 40 °C to +150 °C; RL(LIN-VBAT) = 500 ; all voltages are defined with respect to ground; positive  
currents flow into the IC; typical values are given at VBAT = 12 V; see Figure 5; unless otherwise specified.[1]  
Symbol  
Duty cycles  
δ1  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
[2][3][4][7]  
[2][3][4][7]  
[2][4][5][7]  
[2][4][5][7]  
duty cycle 1  
Vth(rec)(max) = 0.744 × VBAT  
;
0.396 -  
0.396 -  
-
Vth(dom)(max) = 0.581 × VBAT  
;
tbit = 50 µs; VBAT = 7 V to 18 V  
Vth(rec)(max) = 0.76 × VBAT  
;
-
Vth(dom)(max) = 0.593 × VBAT  
;
tbit = 50 µs; VBAT = 5.5 V to 7.0 V  
δ2  
duty cycle 2  
Vth(rec)(min) = 0.422 × VBAT  
;
-
-
-
-
0.581  
0.581  
Vth(dom)(min) = 0.284 × VBAT  
;
tbit = 50 µs; VBAT = 7.6 V to 18 V  
Vth(rec)(min) = 0.41 × VBAT  
;
Vth(dom)(min) = 0.275 × VBAT  
;
tbit = 50 µs; VBAT = 6.1 V to 7.6 V  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
13 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
Table 8.  
Dynamic characteristics …continued  
VBAT = 5.5 V to 18 V; Tvj = 40 °C to +150 °C; RL(LIN-VBAT) = 500 ; all voltages are defined with respect to ground; positive  
currents flow into the IC; typical values are given at VBAT = 12 V; see Figure 5; unless otherwise specified.[1]  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
[3][4][7]  
[3][4][7]  
[4][5][7]  
[4][5][7]  
δ3  
duty cycle 3  
Vth(rec)(max) = 0.778 × VBAT  
;
0.417 -  
-
Vth(dom)(max) = 0.616 × VBAT  
;
tbit = 96 µs; VBAT = 7 V to 18 V  
V
th(rec)(max) = 0.797 × VBAT  
;
0.417 -  
-
Vth(dom)(max) = 0.630 × VBAT  
;
tbit = 96 µs; VBAT = 5.5 V to 7 V  
δ4  
duty cycle 4  
Vth(rec)(min) = 0.389 × VBAT  
;
-
-
-
-
0.590  
0.590  
Vth(dom)(min) = 0.251 × VBAT  
;
tbit = 96 µs; VBAT = 7.6 V to 18 V  
Vth(rec)(min) = 0.378 × VBAT  
;
Vth(dom)(min) = 0.242 × VBAT  
;
tbit = 96 µs; VBAT = 6.1 V to 7.6 V  
Timing characteristics  
[2][4]  
[2][4]  
[2][4]  
tf  
fall time  
rise time  
-
-
-
-
22.5 µs  
22.5 µs  
tr  
-
t(r-f)  
difference between rise VBAT = 7.3 V  
and fall time  
5  
+5  
µs  
[2]  
tPD(TX)  
transmitter propagation  
delay  
-
-
6
µs  
tPD(TX)sym  
tPD(RX)  
tPD(RX)sym  
twake(dom)LIN  
transmitter propagation  
delay symmetry  
2.5  
-
-
+2.5 µs  
[6]  
[6]  
receiver propagation  
delay  
-
6
µs  
µs  
µs  
µs  
µs  
receiver propagation  
delay symmetry  
2  
30  
7
-
+2  
150  
50  
10  
dominant wake-up time Sleep mode  
on pin LIN  
80  
30  
5
twake(dom)WAKE_N dominant wake-up time Sleep mode  
on pin WAKE_N  
tgotonorm  
go to normal time  
time period for mode change from  
Sleep, Power-on or Standby mode  
into Normal mode  
2
tinit(norm)  
tgotosleep  
tto(dom)TXD  
normal mode  
initialization time  
5
-
20  
10  
90  
µs  
µs  
ms  
go to sleep time  
time period for mode change from  
Normal slope mode into Sleep mode  
2
5
TXD dominant time-out VTXD = 0 V  
time  
27  
55  
[1] All parameters are guaranteed by design over the virtual junction temperature range. Products are 100 % tested at 125 °C ambient  
temperature on wafer level (pre-testing). Cased products are 100 % tested at 25 °C ambient temperature (final testing). Both pre-testing  
and final testing use correlated test conditions to cover the specified temperature and power supply voltage range.  
[2] Not applicable for the /10 version of the TJA1021.  
tbus(rec)(min)  
[3] δ1, δ3 =  
-------------------------------  
2 × tbit  
[4] Bus load conditions are: CL = 1 nF and RL = 1 k; CL = 6.8 nF and RL = 660 ; CL = 10 nF and RL = 500 .  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
14 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
tbus(rec)(max)  
[5] δ2, δ4 =  
--------------------------------  
2 × tbit  
[6] Load condition pin RXD: CRXD = 20 pF and RRXD = 2.4 k.  
[7] For VBAT > 18 V the LIN transmitter might be suppressed. If TXD is HIGH then the LIN transmitter output is recessive.  
t
t
t
bit  
bit  
bit  
V
TXD  
t
t
bus(rec)(min)  
bus(dom)(max)  
V
BAT  
V
V
th(rec)(max)  
thresholds of  
receiving node 1  
th(dom)(max)  
LIN BUS  
signal  
V
V
th(rec)(min)  
thresholds of  
receiving node 2  
th(dom)(min)  
t
t
bus(rec)(max)  
bus(dom)(min)  
V
V
RXD  
RXD  
receiving  
node 1  
t
t
p(rx1)r  
p(rx1)f  
receiving  
node 2  
t
t
p(rx2)f  
p(rx2)r  
001aae072  
Fig 5. Timing diagram LIN transceiver  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
15 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
12. Application information  
ECU  
LIN BUS  
LINE  
BATTERY  
+5 V/  
+3.3 V  
only for  
master node  
V
7
INH  
BAT  
1 kΩ  
RXD  
WAKE_N  
V
8
DD  
RX0  
TX0  
Px.x  
1
4
2
3
TXD  
MICRO-  
CONTROLLER  
TJA1021  
SLP_N  
LIN  
6
GND  
5
(1)  
001aae070  
(1) Master: C = 1 nF; slave: C = 220 pF.  
Fig 6. Typical application of the TJA1021  
13. Test information  
V
BAT  
WAKE_N  
SLP_N  
INH  
LIN  
100 nF  
R
L
TJA1021  
TXD  
RXD  
GND  
R
RXD  
C
RXD  
C
L
001aae069  
Fig 7. Test circuit for AC characteristics  
Immunity against automotive transients (malfunction and damage) in accordance with LIN  
EMC Test Specification / Version 1.0; August 1, 2004.  
The waveforms of the applied transients are according to ISO7637-2: Draft 2002-12, test  
pulses 1, 2a, 3a and 3b.  
13.1 Quality information  
This product has been qualified to the appropriate Automotive Electronics Council (AEC)  
standard Q100 or Q101 and is suitable for use in automotive applications.  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
16 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
14. Package outline  
SO8: plastic small outline package; 8 leads; body width 3.9 mm  
SOT96-1  
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
1
4
e
w
M
detail X  
b
p
0
2.5  
5 mm  
scale  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
A
(1)  
(1)  
(2)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.  
0.25  
0.10  
1.45  
1.25  
0.49  
0.36  
0.25  
0.19  
5.0  
4.8  
4.0  
3.8  
6.2  
5.8  
1.0  
0.4  
0.7  
0.6  
0.7  
0.3  
mm  
1.27  
0.05  
1.05  
0.041  
1.75  
0.25  
0.01  
0.25  
0.01  
0.25  
0.1  
8o  
0o  
0.010 0.057  
0.004 0.049  
0.019 0.0100 0.20  
0.014 0.0075 0.19  
0.16  
0.15  
0.244  
0.228  
0.039 0.028  
0.016 0.024  
0.028  
0.012  
inches 0.069  
0.01 0.004  
Notes  
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.  
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
99-12-27  
03-02-18  
SOT96-1  
076E03  
MS-012  
Fig 8. Package outline SOT96-1 (SO8)  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
17 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
HVSON8: plastic thermal enhanced very thin small outline package; no leads;  
8 terminals; body 3 x 3 x 0.85 mm  
SOT782-1  
X
D
B
A
E
A
A
1
c
detail X  
terminal 1  
index area  
e
1
C
terminal 1  
index area  
v
C
C
A
B
e
b
y
y
w
C
1
1
4
L
K
E
h
8
5
D
h
0
1
2 mm  
L
scale  
Dimensions  
(1)  
Unit  
A
A
b
c
D
D
h
E
E
h
e
e
1
K
v
w
y
y
1
1
max 1.00 0.05 0.35  
mm nom 0.85 0.03 0.30 0.2 3.00 2.40 3.00 1.60 0.65 1.95 0.30 0.40 0.1 0.05 0.05 0.1  
min 0.80 0.00 0.25 2.90 2.35 2.90 1.55 0.25 0.35  
3.10 2.45 3.10 1.65  
0.35 0.45  
Note  
1. Plastic or metal protrusions of 0.075 maximum per side are not included.  
sot782-1_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
- - -  
JEDEC  
JEITA  
- - -  
09-08-25  
09-08-28  
SOT782-1  
MO-229  
Fig 9. Package outline SOT782-1 (HVSON8)  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
18 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
15. Handling information  
All input and output pins are protected against ElectroStatic Discharge (ESD) under  
normal handling. When handling ensure that the appropriate precautions are taken as  
described in JESD625-A or equivalent standards.  
16. Soldering of SMD packages  
This text provides a very brief insight into a complex technology. A more in-depth account  
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow  
soldering description”.  
16.1 Introduction to soldering  
Soldering is one of the most common methods through which packages are attached to  
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both  
the mechanical and the electrical connection. There is no single soldering method that is  
ideal for all IC packages. Wave soldering is often preferred when through-hole and  
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not  
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high  
densities that come with increased miniaturization.  
16.2 Wave and reflow soldering  
Wave soldering is a joining technology in which the joints are made by solder coming from  
a standing wave of liquid solder. The wave soldering process is suitable for the following:  
Through-hole components  
Leaded or leadless SMDs, which are glued to the surface of the printed circuit board  
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless  
packages which have solder lands underneath the body, cannot be wave soldered. Also,  
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,  
due to an increased probability of bridging.  
The reflow soldering process involves applying solder paste to a board, followed by  
component placement and exposure to a temperature profile. Leaded packages,  
packages with solder balls, and leadless packages are all reflow solderable.  
Key characteristics in both wave and reflow soldering are:  
Board specifications, including the board finish, solder masks and vias  
Package footprints, including solder thieves and orientation  
The moisture sensitivity level of the packages  
Package placement  
Inspection and repair  
Lead-free soldering versus SnPb soldering  
16.3 Wave soldering  
Key characteristics in wave soldering are:  
© NXP B.V. 2009. All rights reserved.  
TJA1021_5  
Product data sheet  
Rev. 05 — 22 October 2009  
19 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
Process issues, such as application of adhesive and flux, clinching of leads, board  
transport, the solder wave parameters, and the time during which components are  
exposed to the wave  
Solder bath specifications, including temperature and impurities  
16.4 Reflow soldering  
Key characteristics in reflow soldering are:  
Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to  
higher minimum peak temperatures (see Figure 10) than a SnPb process, thus  
reducing the process window  
Solder paste printing issues including smearing, release, and adjusting the process  
window for a mix of large and small components on one board  
Reflow temperature profile; this profile includes preheat, reflow (in which the board is  
heated to the peak temperature) and cooling down. It is imperative that the peak  
temperature is high enough for the solder to make reliable solder joints (a solder paste  
characteristic). In addition, the peak temperature must be low enough that the  
packages and/or boards are not damaged. The peak temperature of the package  
depends on package thickness and volume and is classified in accordance with  
Table 9 and 10  
Table 9.  
SnPb eutectic process (from J-STD-020C)  
Package thickness (mm) Package reflow temperature (°C)  
Volume (mm3)  
< 350  
350  
220  
< 2.5  
235  
220  
2.5  
220  
Table 10. Lead-free process (from J-STD-020C)  
Package thickness (mm) Package reflow temperature (°C)  
Volume (mm3)  
< 350  
260  
350 to 2000  
> 2000  
260  
< 1.6  
260  
250  
245  
1.6 to 2.5  
> 2.5  
260  
245  
250  
245  
Moisture sensitivity precautions, as indicated on the packing, must be respected at all  
times.  
Studies have shown that small packages reach higher temperatures during reflow  
soldering, see Figure 10.  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
20 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
maximum peak temperature  
= MSL limit, damage level  
temperature  
minimum peak temperature  
= minimum soldering temperature  
peak  
temperature  
time  
001aac844  
MSL: Moisture Sensitivity Level  
Fig 10. Temperature profiles for large and small components  
For further information on temperature profiles, refer to Application Note AN10365  
“Surface mount reflow soldering description”.  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
21 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
17. Revision history  
Table 11. Revision history  
Document ID  
TJA1021_5  
Modifications:  
TJA1021_4  
TJA1021_3  
TJA1021_2  
TJA1021_1  
Release date  
20091022  
Data sheet status  
Change notice  
Supersedes  
Product data sheet  
-
TJA1021_4  
HVSON package added  
20090119  
20071008  
20070903  
20061016  
Product data sheet  
-
-
-
-
TJA1021_3  
TJA1021_2  
TJA1021_1  
-
Product data sheet  
Preliminary data sheet  
Objective data sheet  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
22 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
18. Legal information  
18.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
18.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
18.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Bare die — All die are tested on compliance with their related technical  
specifications as stated in this data sheet up to the point of wafer sawing and  
are handled in accordance with the NXP Semiconductors storage and  
transportation conditions. If there are data sheet limits not guaranteed, these  
will be separately indicated in the data sheet. There are no post-packing tests  
performed on individual die or wafers.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
NXP Semiconductors has no control of third party procedures in the sawing,  
handling, packing or assembly of the die. Accordingly, NXP Semiconductors  
assumes no liability for device functionality or performance of the die or  
systems after third party sawing, handling, packing or assembly of the die. It  
is the responsibility of the customer to test and qualify their application in  
which the die is used.  
All die sales are conditioned upon and subject to the customer entering into a  
written die sale agreement with NXP Semiconductors through its legal  
department.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
18.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
23 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
19. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
TJA1021_5  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 05 — 22 October 2009  
24 of 25  
TJA1021  
NXP Semiconductors  
LIN 2.1/SAE J2602 transceiver  
20. Contents  
1
General description . . . . . . . . . . . . . . . . . . . . . . 1  
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Low power management . . . . . . . . . . . . . . . . . 1  
Protection mechanisms . . . . . . . . . . . . . . . . . . 1  
2.1  
2.2  
2.3  
3
4
5
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
6
6.1  
6.2  
Pinning information. . . . . . . . . . . . . . . . . . . . . . 4  
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4  
7
Functional description . . . . . . . . . . . . . . . . . . . 4  
Operating modes . . . . . . . . . . . . . . . . . . . . . . . 4  
Sleep mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Standby mode. . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Normal mode . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Wake-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Remote and local wake-up . . . . . . . . . . . . . . . . 7  
Wake-up via mode transition . . . . . . . . . . . . . . 7  
Wake-up source recognition . . . . . . . . . . . . . . . 8  
TXD dominant time-out function . . . . . . . . . . . . 8  
Fail-safe features . . . . . . . . . . . . . . . . . . . . . . . 8  
7.1  
7.2  
7.3  
7.4  
7.5  
7.6  
7.7  
7.8  
7.9  
7.10  
8
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 10  
Thermal characteristics. . . . . . . . . . . . . . . . . . 10  
Static characteristics. . . . . . . . . . . . . . . . . . . . 11  
Dynamic characteristics . . . . . . . . . . . . . . . . . 13  
Application information. . . . . . . . . . . . . . . . . . 16  
Test information. . . . . . . . . . . . . . . . . . . . . . . . 16  
Quality information . . . . . . . . . . . . . . . . . . . . . 16  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17  
Handling information. . . . . . . . . . . . . . . . . . . . 19  
9
10  
11  
12  
13  
13.1  
14  
15  
16  
Soldering of SMD packages . . . . . . . . . . . . . . 19  
Introduction to soldering . . . . . . . . . . . . . . . . . 19  
Wave and reflow soldering . . . . . . . . . . . . . . . 19  
Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 19  
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 20  
16.1  
16.2  
16.3  
16.4  
17  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 22  
18  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 23  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 23  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 23  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 23  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 23  
18.1  
18.2  
18.3  
18.4  
19  
20  
Contact information. . . . . . . . . . . . . . . . . . . . . 24  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 22 October 2009  
Document identifier: TJA1021_5  

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