SA605D,602 [NXP]
暂无描述;RF COMMUNICATIONS PRODUCTS
SA605
High performance low power mixer FM IF
system
Product specification
Replaces data of November 3, 1992
1997 Nov 07
RF Communications Handbook
Philip s Se m ic ond uc tors
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
DESCRIPTION
PIN CONFIGURATION
The SA605 is a high performance monolithic low-power FM IF
system incorporating a mixer/oscillator, two limiting intermediate
frequency amplifiers, quadrature detector, muting, logarithmic
received signal strength indicator (RSSI), and voltage regulator. The
SA605 combines the functions of Signetics’ SA602 and SA604A, but
features a higher mixer input intercept point, higher IF bandwidth
(25MHz) and temperature compensated RSSI and limiters
permitting higher performance application. The SA605 is available
in 20-lead dual-in-line plastic, 20-lead SOL (surface-mounted
miniature package) and 20-lead SSOP (shrink small outline
package).
N, D and DK Packages
RF
1
2
20 MIXER OUT
IF AMP DECOUPLING
IN
19
RF BYPASS
18 IF AMP IN
XTAL OSC
XTAL OSC
3
4
5
17 IF AMP DECOUPLING
16 IF AMP OUT
15 GND
MUTE
V
IN
6
CC
14 LIMITER IN
RSSI
7
8
OUT
The SA605 and SA615 are functionally the same device types. The
difference between the two devices lies in the guaranteed
13
MUTED AUDIO OUT
UNMUTED AUDIO OUT
QUADRATURE IN
LIMITER DECOUPLING
12
specifications. The SA615 has a higher I , lower input third order
9
LIMITER DECOUPLING
CC
intercept point, lower conversion mixer gain, lower limiter gain, lower
AM rejection, lower SINAD, higher THD, and higher RSSI error than
the SA605. Both the SA605 and SA615 devices will meet the EIA
specifications for AMPS and TACS cellular radio applications.
11 LIMITER OUT
10
SR00335
Figure 1. Pin Configuration
For additional technical information please refer to application notes
AN1994, 1995 and 1996, which include example application
diagrams, a complete overview of the product, and artwork for
reference.
FEATURES
• Low power consumption: 5.7mA typical at 6V
• Mixer input to >500MHz
• Mixer conversion power gain of 13dB at 45MHz
• Mixer noise figure of 4.6dB at 45MHz
APPLICATIONS
• Cellular radio FM IF
• High performance communications receivers
• Single conversion VHF/UHF receivers
• SCA receivers
• XTAL oscillator effective to 150MHz (L.C. oscillator to 1GHz local
oscillator can be injected)
• 102dB of IF Amp/Limiter gain
• 25MHz limiter small signal bandwidth
• RF level meter
• Temperature compensated logarithmic Received Signal Strength
• Spectrum analyzer
Indicator (RSSI) with a dynamic range in excess of 90dB
• Instrumentation
• Two audio outputs - muted and unmuted
• FSK and ASK data receivers
• Log amps
• Low external component count; suitable for crystal/ceramic/LC
filters
• Excellent sensitivity: 0.22µV into 50Ω matching network for 12dB
SINAD (Signal to Noise and Distortion ratio) for 1kHz tone with RF
at 45MHz and IF at 455kHz
• Wideband low current amplification
• SA605 meets cellular radio specifications
• ESD hardened
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
–40 to +85°C
ORDER CODE
SA605N
DWG #
20-Pin Plastic Dual In-Line Package (DIP)
20-Pin Plastic Small Outline Large (SOL) package
20-Pin Plastic Shrink Small Outline Package (SSOP)
SOT146-1
SOT163-1
SOT266-1
–40 to +85°C
SA605D
–40 to +85°C
SA605DK
2
1997 Nov 07
853-1401 18663
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
BLOCK DIAGRAM
20
19
18
17
16
15
14
13
12
11
IF
AMP
LIMITER
RSSI
OSCILLATOR
E
B
1
2
3
4
5
6
7
8
9
10
SR00336
Figure 2. Block Diagram
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
V
Single supply voltage
Storage temperature range
Operating ambient temperature range SA605
9
V
CC
°C
°C
T
STG
-65 to +150
–40 to +85
T
A
Thermal impedance
D package
N package
90
75
θ
°C/W
JA
SSOP package
117
DC ELECTRICAL CHARACTERISTICS
V
CC
= +6V, T = 25°C; unless otherwise stated.
A
LIMITS
SA605
TYP
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
MAX
MIN
4.5
V
CC
Power supply voltage range
DC current drain
8.0
V
I
4.55
5.7
6.55
mA
CC
Mute switch input threshold
(ON)
1.7
V
V
(OFF)
1.0
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1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
AC ELECTRICAL CHARACTERISTICS
T = 25°C; V = +6V, unless otherwise stated. RF frequency = 45MHz + 14.5dBV RF input step-up; IF frequency = 455kHz; R17 = 5.1k; RF
A
CC
level = -45dBm; FM modulation = 1kHz with ±8kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor.
Test circuit Figure 3. The parameters listed below are tested using automatic test equipment to assure consistent electrical characterristics.
The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed
parameters.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
SA605
TYP
UNITS
MIN
MAX
Mixer/Osc section (ext LO = 300mV)
f
Input signal frequency
500
150
5.0
-10
13
MHz
MHz
dB
IN
f
Crystal oscillator frequency
Noise figure at 45MHz
OSC
Third-order input intercept point
Conversion power gain
f1 = 45.0; f2 = 45.06MHz
Matched 14.5dBV step-up
50Ω source
dBm
dB
10
3.0
15
-1.7
4.7
3.5
1.5
dB
RF input resistance
RF input capacitance
Mixer output resistance
Single-ended input
kΩ
4.0
pF
(Pin 20)
1.25
kΩ
IF section
IF amp gain
Limiter gain
50Ω source
39.7
62.5
-113
34
dB
dB
50Ω source
Input limiting -3dB, R = 5.1k
Test at Pin 18
dBm
dB
17
AM rejection
80% AM 1kHz
15nF de-emphasis
150pF de-emphasis
RF level -118dB
29
80
43
Audio level, R = 100k
150
480
16
260
mV
RMS
10
Unmuted audio level, R = 100k
mV
11
SINAD sensitivity
dB
dB
dB
mV
V
THD
S/N
Total harmonic distortion
-34
-42
73
Signal-to-noise ratio
No modulation for noise
IF level = -118dBm
IF level = -68dBm
1
IF RSSI output, R = 100kΩ
0
160
2.5
4.8
90
650
3.1
5.6
9
1.9
4.0
IF level = -18dBm
V
RSSI range
R = 100kΩ Pin 16
9
dB
dB
kΩ
kΩ
kΩ
kΩ
kΩ
RSSI accuracy
R = 100kΩ Pin 16
9
+1.5
1.6
1.0
1.6
58
IF input impedance
1.40
0.85
1.40
IF output impedance
Limiter input impedance
Unmuted audio output resistance
Muted audio output resistance
58
RF/IF section (int LO)
Unmuted audio level
System RSSI output
4.5V = V , RF level = -27dBm
450
4.3
mV
RMS
CC
4.5V = V , RF level = -27dBm
V
CC
NOTE:
1. The generator source impedance is 50Ω, but the SA605 input impedance at Pin 18 is 1500Ω. As a result, IF level refers to the actual signal
that enters the SA605 input (Pin 8) which is about 21dB less than the ”available power” at the generator.
4
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
network does not cause 12dB(v) insertion loss, a fixed or variable
resistor can be added between the first IF output (Pin 16) and the
interstage network.
CIRCUIT DESCRIPTION
The SA605 is an IF signal processing system suitable for second IF
or single conversion systems with input frequency as high as 1GHz.
The bandwidth of the IF amplifier is about 40MHz, with 39.7dB(v) of
gain from a 50Ω source. The bandwidth of the limiter is about
28MHz with about 62.5dB(v) of gain from a 50Ω source. However,
the gain/bandwidth distribution is optimized for 455kHz, 1.5kΩ
source applications. The overall system is well-suited to battery
operation as well as high performance and high quality products of
all types.
The signal from the second limiting amplifier goes to a Gilbert cell
quadrature detector. One port of the Gilbert cell is internally driven
by the IF. The other output of the IF is AC-coupled to a tuned
quadrature network. This signal, which now has a 90° phase
relationship to the internal signal, drives the other port of the
multiplier cell.
Overall, the IF section has a gain of 90dB. For operation at
intermediate frequencies greater than 455kHz, special care must be
given to layout, termination, and interstage loss to avoid instability.
The input stage is a Gilbert cell mixer with oscillator. Typical mixer
characteristics include a noise figure of 5dB, conversion gain of
13dB, and input third-order intercept of -10dBm. The oscillator will
operate in excess of 1GHz in L/C tank configurations. Hartley or
Colpitts circuits can be used up to 100MHz for xtal configurations.
Butler oscillators are recommended for xtal configurations up to
150MHz.
The demodulated output of the quadrature detector is available at
two pins, one continuous and one with a mute switch. Signal
attenuation with the mute activated is greater than 60dB. The mute
input is very high impedance and is compatible with CMOS or TTL
levels.
The output of the mixer is internally loaded with a 1.5kΩ resistor
permitting direct connection to a 455kHz ceramic filter. The input
resistance of the limiting IF amplifiers is also 1.5kΩ. With most
455kHz ceramic filters and many crystal filters, no impedance
matching network is necessary. To achieve optimum linearity of the
log signal strength indicator, there must be a 12dB(v) insertion loss
between the first and second IF stages. If the IF filter or interstage
A log signal strength completes the circuitry. The output range is
greater than 90dB and is temperature compensated. This log signal
strength indicator exceeds the criteria for AMPs or TACs cellular
telephone.
NOTE: dB(v) = 20log V
/V
OUT IN
5
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
-25dB,
-10dB,
-29dB,
929/50Ω PAD
-10.6dB,
50/50Ω PAD
-36dB,
156k/50Ω PAD
1500/50Ω PAD 50/50Ω PAD
51.5
C20
96.5
51.7
96.5
32.6
50.5
71.5
32.8
2430
C24
71.5
C22
1.3k
3880
R17
5.1k
C15
C19
C16
SW9
FLT1 SW8
C23
SW7
SW6
FLT2
SW5
C18
C21
C17
20
19
18
17
16
15
14
13
12
11
IF AMP
700
LIMITER
RSSI
MIXER
QUAD
DETECTOR
OSCILLATOR
MUTE
SWITCH
EMITTER
BASE
1
2
3
4
5
6
7
8
9
10
C9
R9
R10
R11
SW1
SW3
C8
SW4
C1
C2
L1
C7
L2
C10
C11
C12
C13
C5
R4
51.1
IFT1
SW2
X1
R1
C6
C26
C4
C3
R2
EXT.
LOC
OSC
R7
30.5
”C” WEIGHTED
AUDIO
R3
45MHZ
MEASUREMENT
CIRCUIT
C14
44.545
R8
39.2
R6
178
45.06
MHZ
MUTE
RSSI
OUTPUT
AUDIO UNMUTED
AUDIO
V
CC
MINI–CIRCUIT ZSC2–1B
Automatic Test Circuit Component List
C1 47pF NPO Ceramic
C2 180pF NPO Ceramic
C21
C23
C25
C26
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
390pF +10% Monolithic Ceramic
C5
100nF +10% Monolithic Ceramic
C6 22pF NPO Ceramic
C7 1nF Ceramic
C8 10.0pF NPO Ceramic
Flt 1 Ceramic Filter Murata SFG455A3 or equiv
Flt 2 Ceramic Filter Murata SFG455A3 or equiv
IFT 1
L1
L2
455kHz 270µH TOKO #303LN-1129
C9
C10
C11
C12
C13
C14
100nF +10% Monolithic Ceramic
6.8µF Tantalum (minimum) *
100nF +10% Monolithic Ceramic
15nF +10% Ceramic
150pF +2% N1500 Ceramic
100nF +10% Monolithic Ceramic
300nH TOKO #5CB-1055Z
0.8µH TOKO 292CNS–T1038Z
X1 44.545MHz Crystal ICM4712701
R9
R17
R10
R11
100k +1% 1/4W Metal Film
5.1k +5% 1/4W Carbon Composition
100k +1% 1/4W Metal Film (optional)
100k +1% 1/4W Metal Film (optional)
C15 10pF NPO Ceramic
C17
C18
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
* NOTE: This value can be reduced when a battery is the power source.
SR00337
Figure 3. SA605 45MHz Test Circuit (Relays as shown)
6
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
R17
5.1k
C15
FLT1
C23
FLT2
C18
C21
C17
20
19
18
17
16
15
14
13
12
11
IF AMP
700
LIMITER
RSSI
MIXER
QUAD
DETECTOR
OSCILLATOR
MUTE
SWITCH
1
2
3
4
5
6
7
8
9
10
C9
R9
R10
R11
C1
C2
C8
L1
C7
R5
C5
C10
C25
C11
C12
C13
IFT1
L2
45MHz
INPUT
X1
C26
C6
C14
MUTE
RSSI
OUTPUT
AUDIO UNMUTED
AUDIO
V
CC
Application Component List
C1 47pF NPO Ceramic
C2 180pF NPO Ceramic
C5
C6 22pF NPO Ceramic
C7 1nF Ceramic
C21
C23
C25
C26
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
390pF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
Flt 1 Ceramic Filter Murata SFG455A3 or equiv
Flt 2 Ceramic Filter Murata SFG455A3 or equiv
C8 10.0pF NPO Ceramic
IFT 1
L1
L2
455kHz 270µH TOKO #303LN-1129
C9
C10
C11
C12
C13
C14
100nF +10% Monolithic Ceramic
6.8µF Tantalum (minimum)
100nF +10% Monolithic Ceramic
15nF +10% Ceramic
150pF +2% N1500 Ceramic
100nF +10% Monolithic Ceramic
300nH TOKO #5CB-1055Z
0.8µH TOKO 292CNS–T1038Z
X1 44.545MHz Crystal ICM4712701
R9
R17
R10
R11
100k +1% 1/4W Metal Film
5.1k +5% 1/4W Carbon Composition
100k +1% 1/4W Metal Film (optional)
100k +1% 1/4W Metal Film (optional)
C15 10pF NPO Ceramic
C17
C18
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
* NOTE: This value can be reduced when a battery is the power source.
SR00338
Figure 4. SA605 45MHz Application Circuit
7
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
RF GENERATOR
NE605 DEMO BOARD
45MHz
RSSI
AUDIO
DATA
V
CC
(+6)
C–MESSAGE
DC VOLTMETER
HP339A DISTORTION
ANALYZER
SCOPE
SR00339
Figure 5. SA605 Application Circuit Test Set Up
NOTES:
1. C-message: The C-message filter has a peak gain of 100 for accurate measurements. Without the gain, the measurements may be af-
fected by the noise of the scope and HP339 analyzer.
2. Ceramic filters: The ceramic filters can be 30kHz SFG455A3s made by Murata which have 30kHz IF bandwidth (they come in blue), or
16kHz CFU455Ds, also made by Murata (they come in black). All of our specifications and testing are done with the more wideband filter.
3. RF generator: Set your RF generator at 45.000MHz, use a 1kHz modulation frequency and a 6kHz deviation if you use 16kHz filters, or
8kHz if you use 30kHz filters.
4. Sensitivity: The measured typical sensitivity for 12dB SINAD should be 0.22µV or -120dBm at the RF input.
5. Layout: The layout is very critical in the performance of the receiver. We highly recommend our demo board layout.
6. RSSI: The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and
design. If the lowest RSSI voltage is 250mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity
will be worse than expected.
7. Supply bypass and shielding: All of the inductors, the quad tank, and their shield must be grounded. A 10-15µF or higher value tantalum
capacitor on the supply line is essential. A low frequency ESR screening test on this capacitor will ensure consistent good sensitivity in pro-
duction. A 0.1µF bypass capacitor on the supply pin, and grounded near the 44.545MHz oscillator improves sensitivity by 2-3dB.
8. R5 can be used to bias the oscillator transistor at a higher current for operation above 45MHz. Recommended value is 22kΩ, but should not
be below 10kΩ.
8
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
20
RF = 45MHz
IF = 455kHz
V
= 6V
CC
AUDIO REF = 174mV
RMS
RSSI
0
–20
–40
5
4
3
(Volts)
THD NOISE
AM (80%)
–60
–80
2
1
0
NOISE
RSSI
(Volts)
–100
–130
–110
–90
–70
–50
–30
–10
10
RF INPUT LEVEL (dBm)
SR00340
Figure 6. SA605 Application Board at 25°C
9
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
DIP20: plastic dual in-line package; 20 leads (300 mil)
SOT146-1
10
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
11
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
12
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
DEFINITIONS
Data Sheet Identification
Product Status
Definition
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
Objective Specification
Formative or in Design
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Preliminary Specification
Product Specification
Preproduction Product
Full Production
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. PhilipsSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertesting
or modification.
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Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
orsystemswheremalfunctionofaPhilipsSemiconductorsandPhilipsElectronicsNorthAmericaCorporationProductcanreasonablybeexpected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Copyright Philips Electronics North America Corporation 1997
All rights reserved. Printed in U.S.A.
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Philips
Semiconductors
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