SA605D/01,118 [NXP]
SA605 - High performance low power mixer FM IF system SOP 20-Pin;型号: | SA605D/01,118 |
厂家: | NXP |
描述: | SA605 - High performance low power mixer FM IF system SOP 20-Pin 光电二极管 商用集成电路 |
文件: | 总25页 (文件大小:536K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SA605
High performance low power mixer FM IF system
Rev. 5 — 14 November 2014
Product data sheet
1. General description
The SA605 is a high performance monolithic low-power FM IF system incorporating a
mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector,
muting, logarithmic received signal strength indicator (RSSI), and voltage regulator. The
SA605 combines the functions of NXP SA602A and SA604A, but features a higher mixer
input intercept point, higher IF bandwidth (25 MHz) and temperature compensated RSSI
and limiters permitting higher performance application. The SA605 is available in 20-lead
SO (surface-mounted miniature package) and 20-lead SSOP (shrink small outline
package).
The SA605 and SA615 are functionally the same device types. The difference between
the two devices lies in the guaranteed specifications. The SA615 has a higher ICC, lower
input third-order intercept point, lower conversion mixer gain, lower limiter gain, lower AM
rejection, lower SINAD, higher THD, and higher RSSI error than the SA605. Both the
SA605 and SA615 devices meet the EIA specifications for AMPS and TACS cellular radio
applications.
2. Features and benefits
Low power consumption: 5.7 mA typical at 6 V
Mixer input to >500 MHz
Mixer conversion power gain of 13 dB at 45 MHz
Mixer noise figure of 4.6 dB at 45 MHz
XTAL oscillator effective to 150 MHz (L/C oscillator to 1 GHz local oscillator can be
injected)
102 dB of IF amplifier/limiter gain
25 MHz limiter small signal bandwidth
Temperature-compensated logarithmic Received Signal Strength Indicator (RSSI) with
a dynamic range in excess of 90 dB
Two audio outputs — muted and unmuted
Low external component count; suitable for crystal/ceramic/LC filters
Excellent sensitivity: 0.22 V into 50 matching network for 12 dB SINAD
(Signal-to-Noise-and-Distortion ratio) for 1 kHz tone with RF at 45 MHz and IF at
455 kHz
SA605 meets cellular radio specifications
ESD hardened
SA605
NXP Semiconductors
High performance low power mixer FM IF system
3. Applications
Cellular radio FM IF
High performance communications receivers
Single conversion VHF/UHF receivers
SCA receivers
RF level meter
Spectrum analyzer
Instrumentation
FSK and ASK data receivers
Log amps
Wideband low current amplification
4. Ordering information
Table 1.
Ordering information
Type number
Topside
marking
Package
Name
Description
Version
SA605D/01
SA605D
SO20
plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
SA605DK/01
SA605DK SSOP20
plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1
4.1 Ordering options
Table 2.
Ordering options
Type number
Orderable
part number
Package
Packing method
Minimum
order
Temperature
quantity
SA605D/01
SA605D/01,112
SA605D/01,118
SA605DK/01,112
SA605DK/01,118
SO20
Standard marking
* IC’s tube - DSC bulk pack
1520
2000
1350
2500
Tamb = 40 C to +85 C
SO20
Reel 13” Q1/T1
*Standard mark SMD
Tamb = 40 C to +85 C
SA605DK/01
SSOP20
SSOP20
Standard marking
* IC’s tube - DSC bulk pack
Tamb = 40 C to +85 C
Tamb = 40 C to +85 C
Reel 13” Q1/T1
*Standard mark SMD
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
2 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
5. Block diagram
20
19
18
17
16
15
14
13
12
11
IF amp
limiter
mixer
RSSI
quad
10
OSCILLATOR
mute
E
3
B
4
1
2
5
6
7
8
9
aaa-012909
Fig 1. Block diagram
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
3 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
6. Pinning information
6.1 Pinning
1
2
20
19
18
17
16
15
14
13
12
11
RF_IN
RF_BYPASS
OSC_OUT
MIXER_OUT
IF_AMP_DECOUPL
IF_AMP_IN
3
4
OSC_IN
IF_AMP_DECOUPL
IF_AMP_OUT
GND
5
MUTE_INPUT
SA605D/01
6
V
CC
7
RSSI_OUT
MUTE_AUD_OUTP
UNMUTE_AUD_OUTP
QUADRATURE_IN
LIMITER_IN
8
LIMITER_DECOUPL
LIMITER_DECOUPL
LIMITER_OUT
9
10
aaa-012910
Fig 2. Pin configuration for SO20
1
2
20
MIXER_OUT
RF_IN
RF_BYPASS
OSC_OUT
19
18
17
16
15
14
13
12
11
IF_AMP_DECOUPL
IF_AMP_IN
3
4
OSC_IN
IF_AMP_DECOUPL
IF_AMP_OUT
GND
5
MUTE_INPUT
SA605DK/01
6
V
CC
7
RSSI_OUT
MUTE_AUD_OUTP
UNMUTE_AUD_OUTP
QUADRATURE_IN
LIMITER_IN
8
LIMITER_DECOUPL
LIMITER_DECOUPL
LIMITER_OUT
9
10
aaa-012911
Fig 3. Pin configuration for SSOP20
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
4 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
6.2 Pin description
Table 3.
Symbol
RF_IN
Pin description
Pin
1
Description
RF input
RF_BYPASS
2
RF bypass pin
OSC_OUT
3
oscillator output
OSC_IN
4
oscillator input
MUTE_INPUT
VCC
5
mute input
6
positive supply voltage
RSSI output
RSSI_OUT
7
MUTED_AUD_OUTP
UNMUTED_AUD_OUTP
QUADRATURE_IN
LIMITER_OUT
LIMITER_DECOUPL
LIMITER_DECOUPL
LIMITER_IN
8
mute audio output
unmute audio output
quadrature detector input terminal
limiter amplifier output
limiter amplifier decoupling pin
limiter amplifier decoupling pin
limiter amplifier input
ground; negative supply
IF amplifier output
IF amplifier decoupling pin
IF amplifier input
9
10
11
12
13
14
15
16
17
18
19
20
GND
IF_AMP_OUT
IF_AMP_DECOUPL
IF_AMP_IN
IF_AMP_DECOUPL
MIXER_OUT
IF amplifier decoupling pin
mixer output
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
5 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCC
Parameter
Conditions
Min
-
Max
9
Unit
V
supply voltage
Tstg
storage temperature
ambient temperature
65
40
+150
+85
C
C
Tamb
operating
8. Thermal characteristics
Table 5.
Symbol
Zth(j-a)
Thermal characteristics
Parameter
Conditions
SA605D/01 (SO20)
SA605DK/01 (SSOP20)
Typ
Unit
K/W
K/W
transient thermal impedance
from junction to ambient
90
117
9. Static characteristics
Table 6.
Static characteristics
VCC = +6 V; Tamb = 25 C; unless specified otherwise.
Symbol
VCC
Parameter
Conditions
Min
4.5
4.55
1.7
-
Typ
Max
8.0
6.55
-
Unit
V
supply voltage
supply current
threshold voltage
-
ICC
5.7
mA
V
Vth
mute switch-on
mute switch-off
-
-
1.0
V
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
6 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
10. Dynamic characteristics
Table 7.
Dynamic characteristics
Tamb = 25 C; VCC = +6 V; unless specified otherwise. RF frequency = 45 MHz + 14.5 dBV RF input step-up.
IF frequency = 455 kHz; R17 = 5.1 k; RF level = 45 dBm; FM modulation = 1 kHz with 8 kHz peak deviation.
Audio output with C-message weighted filter and de-emphasis capacitor. Test circuit Figure 7. The parameters listed below
are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent the
ultimate performance limits of the device. Use of an optimized RF layout improves many of the listed parameters.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Mixer/oscillator section (external LO = 300 mV)
fi
input frequency
-
500
150
5.0
10
13
-
MHz
MHz
dB
fosc
oscillator frequency
noise figure
-
-
NF
at 45 MHz
-
-
IP3i
Gp(conv)
input third-order intercept point
conversion power gain
FL1 = 45.0 MHz; FL2 = 45.06 MHz
matched 14.5 dBV step-up
50 source
-
-
dBm
dB
10
-
15
1.7
4.7
3.5
1.5
-
dB
Ri(RF)
RF input resistance
RF input capacitance
mixer output resistance
single-ended input
3.0
-
-
k
Ci(RF)
4.0
-
pF
Ro(mix)
IF section
Gamp(IF)
Glim
MIXER_OUT pin
1.25
k
IF amplifier gain
limiter gain
50 source
50 source
-
-
-
39.7
62.5
113
-
-
-
dB
dB
Pi(IF)
IF input power
for 3 dB input limiting sensitivity;
dBm
R17 = 5.1 k; test at IF_AMP_IN pin
AM
AM rejection
audio level
80 % AM 1 kHz
29
80
34
43
dB
RMS value; R10 = 100 k;
150
260
mV
15 nF de-emphasis
unmuted audio level
R11 = 100 k; 150 pF de-emphasis
-
480
16
-
-
-
-
mV
dB
dB
dB
SINAD
THD
signal-to-noise-and-distortion ratio RF level 118 dB
-
total harmonic distortion
34
42
73
S/N
signal-to-noise ratio
RSSI output voltage
no modulation for noise
-
[1]
Vo(RSSI)
IF; R9 = 100 k
IF level = 118 dBm
0
160
2.5
4.8
90
650
mV
V
IF level = 68 dBm
1.9
3.1
IF level = 18 dBm
4.0
5.6
V
RSSI(range) RSSI range
R9 = 100 k; IF_AMP_OUT pin
R9 = 100 k; IF_AMP_OUT pin
-
-
-
-
-
-
-
-
dB
dB
k
k
k
k
k
RSSI
Zi(IF)
Zo(IF)
Zi(lim)
Ro
RSSI variation
-
1.5
1.6
1.0
1.6
58
IF input impedance
IF output impedance
limiter input impedance
output resistance
1.40
0.85
1.40
-
unmuted audio
muted audio
-
58
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
7 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
Table 7.
Dynamic characteristics …continued
Tamb = 25 C; VCC = +6 V; unless specified otherwise. RF frequency = 45 MHz + 14.5 dBV RF input step-up.
IF frequency = 455 kHz; R17 = 5.1 k; RF level = 45 dBm; FM modulation = 1 kHz with 8 kHz peak deviation.
Audio output with C-message weighted filter and de-emphasis capacitor. Test circuit Figure 7. The parameters listed below
are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent the
ultimate performance limits of the device. Use of an optimized RF layout improves many of the listed parameters.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RF/IF section (internal LO)
unmuted audio level
RMS value; VCC = 4.5 V;
RF level = 27 dBm
-
-
450
4.3
-
-
mV
V
Vo(RSSI)
RSSI output voltage
system; VCC = 4.5 V;
RF level = 27 dBm
[1] The generator source impedance is 50 , but the SA605 input impedance at pin 18 (IF_AMP_IN) is 1500 . As a result, IF level refers
to the actual signal that enters the SA605 input (pin 8, MUTED_AUD_OUTP) which is about 21 dB less than the ‘available power’ at the
generator.
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
8 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
11. Application information
R17
C15
5.1 kΩ
FL1
20
FL2
C23
C21
17
C18 C17
13
19
18
16
15
14
12
11
700 Ω
IF amp
limiter
mixer
quad
detector
RSSI
mute
switch
OSCILLATOR
1
2
3
4
5
6
7
8
9
10
L3
C3
C1
C9
R9
R10
C12
R11
C13
C8
(1)
R5
C7
L2
C24
C10
C11
C26
C25
L1
C2
45 MHz
input
C5
C6
X1
C14
aaa-012965
The layout is very critical in the performance of the receiver. We highly recommend our demo
board layout.
All of the inductors, the quad tank, and their shield must be grounded. A 10 F to 15 F or higher
value tantalum capacitor on the supply line is essential. A low frequency ESR screening test on this
capacitor ensures consistent good sensitivity in production. A 0.1 F bypass capacitor on the
supply pin, and grounded near the 44.545 MHz oscillator improves sensitivity by 2 dB to 3 dB.
(1) R5 can be used to bias the oscillator transistor at a higher current for operation above 45 MHz.
Recommended value is 22 k, but should not be below 10 k.
Fig 4. SA605 45 MHz application circuit
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
9 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
Table 8.
SA605 application component list
Component Value
Description
NPO ceramic
NPO ceramic
Package
C0805K
C0805K
Part number
C1
33 pF
445-127x-1-ND
445-7484-6-ND
490-1994-2-ND
311-1036-1-ND
490-1994-2-ND
399-3293-1-ND
490-1994-2-ND
311-1036-1-ND
478-3117-1-ND
311-1036-1-ND
399-1161-1-ND
399-1125-1-ND
311-1036-1-ND
311-1036-1-ND
311-1036-1-ND
311-1036-1-ND
311-1036-1-ND
311-1036-1-ND
490-1994-2-ND
C2
220 pF
C3
5 pF to 30 pF
100 nF 10 %
5 pF to 30 pF
1 nF
NPO ceramic; Murata TZC3P300A 110R00 TRIMCAP
100 nF 10 % monolithic ceramic C0805K
NPO ceramic; Murata TZC3P300A 110R00 TRIMCAP
C5
C6
C7
ceramic
C0805K
C0805K
C0805K
C1812
C8
10 pF
NPO ceramic
C9
100 nF 10 %
22 F
monolithic ceramic
tantalum
C10[1]
C11
C12
C13
C14
C15
C17
C18
C21
C23
C24
C25
C26
CN1
CN2
100 nF 10 %
15 nF 10 %
150 pF 2 %
100 nF 10 %
10.0 pF
monolithic ceramic
ceramic
C0805K
C0805K
C0805K
C0805K
C0805K
C0805K
C0805K
C0805K
C0805K
N1500 ceramic
monolithic ceramic
NPO ceramic
100 nF 10 %
100 nF 10 %
100 nF 10 %
100 nF 10 %
monolithic ceramic
monolithic ceramic
monolithic ceramic
monolithic ceramic
5 pF to 30 pF trim NPO ceramic; Murata TZC3P300A 110R00 TRIMCAP
470 pF
39 pF
monolithic ceramic
monolithic ceramic
8-pin header
C0805K
C0805K
MA08-1
399-8083-10ND
BU-SMA-H
J502-ND-142-
0701-881/886
520-142-0701-881
FL1, FL2[2]
ceramic filter;
surface mount
CFUKF455KB4X-R0
Murata CFUKF455KB4X or equivalent
L1
330 nH
Coilcraft 1008CS-331
WE-KI_1008_B 1008CS-331
L2
1.2 H
fixed inductor Coilcraft 1008CS-122XKLC WE-KI_1008_B 1008CS-122
L3
220 H
fixed inductor
WE-GF_L
R0603
1812LS-224XJB
311-100KCRCT-ND
311-100KCRCT-ND
311-100KCRCT-ND
311-5.10KCRDKR-ND
568-2087-5-nd
R9
100 k 1 %
100 k 1 %
100 k 1 %
5.1 k 5 %
1/4 W metal film
R10[3]
R11[3]
R17
U1
1/4 W metal film
C0805K
C0805K
C0805K
TSSOP20
UM-1
1/4 W metal film
1/4 W carbon composition
SA605DK
X1
44.545 MHz
resonant 3rd-overtone crystal
49HC/11453
[1] This value can be reduced when a battery is the power source.
[2] The ceramic filters can be 30 kHz SFG455A3s made by Murata, which have 30 kHz IF bandwidth (they come in blue), or 16 kHz
CFU455Ds, also made by Murata (they come in black). All of our specifications and testing are done with the more wideband filter.
[3] Optional.
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
10 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
(1)
RF GENERATOR
45 MHz
SA605 DEMOBOARD
V
(+6 V)
CC
(2)
RSSI
AUDIO
DATA
DC VOLTMETER
(3)
C-MESSAGE
HP339A DISTORTION
SCOPE
(4)
ANALYZER
aaa-012958
(1) The C-message filter has a peak gain of 100 dB for accurate measurements. Without the gain, the
measurements may be affected by the noise of the scope and HP339 analyzer.
(2) Set your RF generator at 45.000 MHz, use a 1 kHz modulation frequency and a 6 kHz deviation if
you use 16 kHz filters, or 8 kHz if you use 30 kHz filters.
(3) The smallest RSSI voltage (that is, when no RF input is present and the input is terminated) is a
measure of the quality of the layout and design. If the lowest RSSI voltage is 250 mV or higher, it
means that the receiver is in regenerative mode. In that case, the receiver sensitivity is worse than
expected.
(4) The measured typical sensitivity for 12 dB SINAD should be 0.22 V or 120 dBm at the RF input.
Fig 5. SA605 application circuit test setup
20
6
5
4
3
2
1
0
RF = 45 MHz
RSSI
(V)
IF = 455 kHz
V
= 6 V
CC
AUDIO REF = 174 mV (RMS value)
0
THD + NOISE
AM (80 % MOD)
NOISE
(dB)
−20
THD + NOISE
AM (80 % MOD)
−40
−60
RSSI (V)
−110
−80
NOISE
−100
−130
−90
−70
−50
−30
−10
10 20
RF input level (dBm)
aaa-012967
Audio out:
C message weighted
0 dB reference = recovered audio for 8 kHz peak deviation (dB)
Fig 6. Performance of the SA605 application board at 25 C
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
11 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
11.1 Circuit description
The SA605 is an IF signal processing system suitable for second IF or single conversion
systems with input frequency as high as 1 GHz. The bandwidth of the IF amplifier is about
40 MHz, with 39.7 dB of gain from a 50 source. The bandwidth of the limiter is about
28 MHz with about 62.5 dB of gain from a 50 source. However, the gain/bandwidth
distribution is optimized for 455 kHz, 1.5 k source applications. The overall system is
well-suited to battery operation as well as high-performance and high-quality products of
all types.
The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include
a noise figure of 5 dB, conversion gain of 13 dB, and input third-order intercept of
10 dBm. The oscillator operates in excess of 1 GHz in L/C tank configurations. Hartley or
Colpitts circuits can be used up to 100 MHz for crystal configurations. Butler oscillators
are recommended for crystal configurations up to 150 MHz.
The output of the mixer is internally loaded with a 1.5 k resistor, permitting direct
connection to a 455 kHz ceramic filter. The input resistance of the limiting IF amplifiers is
also 1.5 k. With most 455 kHz ceramic filters and many crystal filters, no impedance
matching network is necessary. To achieve optimum linearity of the log signal strength
indicator, there must be a 12 dBV insertion loss between the first and second IF stages. If
the IF filter or inter-stage network does not cause 12 dBV insertion loss, a fixed or variable
resistor can be added between the first IF output (pin 16, IF_AMP_OUT) and the
inter-stage network.
The signal from the second limiting amplifier goes to a Gilbert cell quadrature detector.
One port of the Gilbert cell is internally driven by the IF. The other output of the IF is
AC-coupled to a tuned quadrature network. This signal, which now has a 90 phase
relationship to the internal signal, drives the other port of the multiplier cell.
Overall, the IF section has a gain of 90 dB. For operation at intermediate frequencies
greater than 455 kHz, special care must be given to layout, termination, and inter-stage
loss to avoid instability.
The demodulated output of the quadrature detector is available at two pins, one
continuous and one with a mute switch. Signal attenuation with the mute activated is
greater than 60 dB. The mute input is very high-impedance and is compatible with CMOS
or TTL levels.
A log signal strength completes the circuitry. The output range is greater than 90 dB and is
temperature compensated. This log signal strength indicator exceeds the criteria for
AMPS or TACS cellular telephone.
Remark: dBV = 20log VO / VI.
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
12 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
12. Test information
−25 dB,
−10.6 dB,
−29 dB,
929 Ω/50 Ω pad
−10.6 dB,
50 Ω/50 Ω pad
−36 dB,
156 kΩ/50 Ω pad
1500 Ω/50 Ω pad 50 Ω/50 Ω pad
50.5 Ω
3880 Ω
96.5 Ω
51.5 Ω
96.5 Ω
51.7 Ω
1.3 kΩ
71.5 Ω
32.6 Ω
71.5 Ω
32.8 Ω
C24
FL1
R17
C15
C16
C22 C20
SW8 SW7
C19
5.1 kΩ
SW9
SW6
SW5
FL2
C18 C17
C23
19
C21
20
18
17
16
15
14
13
12
11
700 Ω
IF amp
limiter
mixer
quad
detector
RSSI
mute
switch
OSCILLATOR
1
2
3
4
5
6
7
8
9
10
C9
R9
R10
C12
R11
C3
C1
SW1
SW3
C8
SW4
C10
C11
C13
L1
C7
L2
C2
IFT1
C5
C26
‘C’ WEIGHTED
AUDIO
X1
MEASUREMENT
CIRCUIT
SW2
C6
R1
R3
C14
C3
C4
R2
ext.
LOC osc
44.545 MHz
R7
30.5 Ω
45.06
MHz
45 MHz
R6
R8
178 Ω 39.2 Ω
mini-circuit
ZSC2-1B
aaa-012966
Fig 7. SA605 45 MHz test circuit (relays as shown)
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
13 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
Table 9.
Automatic test circuit component list
Description
Component
C1
33 pF NPO ceramic
C2
180 pF NPO ceramic
C3, C6
5 pF to 30 pF variable capacitor; Murata TZC3P300A 110R00
C5, C9, C11, C14, C17, 100 nF 10 % monolithic ceramic
C18, C21, C23
C7
1 nF ceramic
C8, C15
C10[1]
C12
C13
C26
FL1
10 pF NPO ceramic
6.8 F tantalum (minimum)
15 nF 10 % ceramic
150 pF 2 % N1500 ceramic
390 pF 10 % monolithic ceramic
ceramic filter Murata SFG455A3 or equivalent
FL2
IFT1
L1
330 H variable shielded inductor, Toko 836AN-0129Z
330 nH Coilcraft 1008CS-331
L2
1.2 H Coilcraft 1008CS-122
X1
44.545 MHz 3rd Overtone series resonant crystal in the HC-49U case
100 k 1 % 1/4 W metal film
R9
R10, R11
R17
100 k 1 % 1/4 W metal film (optional)
5.1 k 5 % 1/4 W carbon composition
[1] This value can be reduced when a battery is the power source.
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
14 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
13. Package outline
62ꢃꢇꢈꢀSODVWLFꢀVPDOOꢀRXWOLQHꢀSDFNDJHꢉꢀꢃꢇꢀOHDGVꢉꢀERG\ꢀZLGWKꢀꢊꢁꢋꢀPPꢀ
627ꢂꢌꢄꢍꢂꢀ
'ꢀ
(ꢀ
$ꢀ
;ꢀ
Fꢀ
\ꢀ
+ꢀ
(ꢀ
Yꢀ 0ꢀ
$ꢀ
=ꢀ
ꢁꢅꢀ
ꢇꢇꢀ
4ꢀ
$ꢀ
ꢁꢀ
$ꢀ
ꢌ$ꢀꢀꢍꢀ
ꢆꢀ
$ꢀ
ꢇꢀ
SLQꢀꢇꢀLQGH[ꢀ
șꢀ
/ꢀ
Sꢀ
/ꢀ
ꢇꢀ
ꢇꢅꢀ
Zꢀ 0ꢀ
GHWDLOꢀ;ꢀ
Hꢀ
Eꢀ
Sꢀ
ꢅꢀ
ꢄꢀ
ꢇꢅꢀPPꢀ
VFDOHꢀ
',0(16,216ꢀꢅLQFKꢀGLPHQVLRQVꢀDUHꢀGHULYHGꢀIURPꢀWKHꢀRULJLQDOꢀPPꢀGLPHQVLRQVꢆꢀ
$ꢀ
ꢅꢂꢆꢀ
ꢅꢂꢆꢀ
ꢅꢂꢆꢀ
81,7ꢀ
$ꢀ
$ꢀ
$ꢀ
Eꢀ
Sꢀ
Fꢀ
'ꢀ
(ꢀ
Hꢀ
+ꢀ
/ꢀ
/ꢀ
4ꢀ
Yꢀ
Zꢀ
\ꢀ
ꢅꢂꢇꢀ
șꢀ
ꢂꢀ
ꢃꢀ
ꢄꢀ
(ꢀ
Sꢀ
=ꢀ
PD[ꢁꢀ
ꢅꢂꢆꢀ
ꢅꢂꢇꢀ
ꢁꢂꢈꢄꢀ
ꢁꢂꢁꢄꢀ
ꢅꢂꢈꢉꢀ ꢅꢂꢆꢁꢀ ꢇꢆꢂꢅꢀ
ꢅꢂꢆꢃꢀ ꢅꢂꢁꢆꢀ ꢇꢁꢂꢃꢀ
ꢊꢂꢃꢀ
ꢊꢂꢈꢀ
ꢇꢅꢂꢃꢄꢀ
ꢇꢅꢂꢅꢅꢀ
ꢇꢂꢇꢀ
ꢅꢂꢈꢀ
ꢇꢂꢇꢀ
ꢇꢂꢅꢀ
ꢅꢂꢉꢀ
ꢅꢂꢈꢀ
PPꢀ
ꢁꢂꢃꢄꢀ
ꢅꢂꢁꢄꢀ
ꢅꢂꢅꢇꢀ
ꢇꢂꢁꢊꢀ
ꢅꢂꢅꢄꢀ
ꢇꢂꢈꢀ
ꢅꢂꢁꢄꢀ ꢅꢂꢁꢄꢀ
Rꢀ
ꢋꢀ
Rꢀ
ꢅꢀ
ꢅꢂꢅꢇꢁꢀ ꢅꢂꢅꢉꢃꢀ
ꢅꢂꢅꢅꢈꢀ ꢅꢂꢅꢋꢉꢀ
ꢅꢂꢅꢇꢉꢀ ꢅꢂꢅꢇꢆꢀ ꢅꢂꢄꢇꢀ ꢅꢂꢆꢅꢀ
ꢅꢂꢅꢇꢈꢀ ꢅꢂꢅꢅꢉꢀ ꢅꢂꢈꢉꢀ ꢅꢂꢁꢉꢀ
ꢅꢂꢈꢇꢉꢀ
ꢅꢂꢆꢉꢈꢀ
ꢅꢂꢅꢈꢆꢀ ꢅꢂꢅꢈꢆꢀ
ꢅꢂꢅꢇꢃꢀ ꢅꢂꢅꢆꢉꢀ
ꢅꢂꢅꢆꢄꢀ
ꢅꢂꢅꢇꢃꢀ
LQFKHVꢀ ꢅꢂꢇꢀ
ꢅꢂꢅꢄꢄꢀ
ꢅꢂꢅꢇꢀ ꢅꢂꢅꢇꢀ ꢅꢂꢅꢅꢈꢀ
1RWHꢀ
ꢇꢂꢀ3ODVWLFꢀRUꢀPHWDOꢀSURWUXVLRQVꢀRIꢀꢅꢂꢇꢄꢀPPꢀꢌꢅꢂꢅꢅꢃꢀLQFKꢍꢀPD[LPXPꢀSHUꢀVLGHꢀDUHꢀQRWꢀLQFOXGHGꢂꢀꢀꢀ
ꢀ5()(5(1&(6ꢀ
ꢀ-('(&ꢀ ꢀ-(,7$ꢀ
ꢀ06ꢎꢅꢇꢆꢀ
287/,1(ꢀ
9(56,21ꢀ
(8523($1ꢀ
352-(&7,21ꢀ
,668(ꢀ'$7(ꢀ
ꢀ,(&ꢀ
ꢉꢉꢎꢇꢁꢎꢁꢊꢀ
ꢅꢆꢎꢅꢁꢎꢇꢉꢀ
ꢀ627ꢇꢃꢆꢎꢇꢀ
ꢀꢅꢊꢄ(ꢅꢈꢀ
Fig 8. Package outline SOT163-1 (SO20)
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
15 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
6623ꢃꢇꢈꢀSODVWLFꢀVKULQNꢀVPDOOꢀRXWOLQHꢀSDFNDJHꢉꢀꢃꢇꢀOHDGVꢉꢀERG\ꢀZLGWKꢀꢎꢁꢎꢀPPꢀ
627ꢃꢌꢌꢍꢂꢀ
'ꢀ
(ꢀ
$ꢀ
;ꢀ
Fꢀ
\ꢀ
+ꢀ
(ꢀ
Yꢀ 0ꢀ
$ꢀ
=ꢀ
ꢁꢅꢀ
ꢇꢇꢀ
4ꢀ
$ꢀ
ꢁꢀ
$ꢀ
ꢌ$ꢀꢀꢍꢀ
ꢆꢀ
$ꢀ
ꢇꢀ
SLQꢀꢇꢀLQGH[ꢀ
șꢀ
/ꢀ
Sꢀ
/ꢀ
ꢇꢀ
ꢇꢅꢀ
GHWDLOꢀ;ꢀ
Zꢀ 0ꢀ
Eꢀ
Sꢀ
Hꢀ
ꢅꢀ
ꢁꢂꢄꢀ
ꢄꢀPPꢀ
VFDOHꢀ
',0(16,216ꢀꢅPPꢀDUHꢀWKHꢀRULJLQDOꢀGLPHQVLRQVꢆꢀ
$ꢀ
ꢅꢂꢆꢀ
ꢅꢂꢆꢀ
ꢅꢂꢆꢀ
81,7ꢀ
$ꢀ
ꢂꢀ
$ꢀ
ꢃꢀ
$ꢀ
ꢄꢀ
Eꢀ
Sꢀ
Fꢀ
'ꢀ
(ꢀ
Hꢀ
+ꢀ
/ꢀ
/ꢀ
Sꢀ
4ꢀ
Yꢀ
ꢅꢂꢁꢀ
Zꢀ
ꢅꢂꢇꢆꢀ
\ꢀ
ꢅꢂꢇꢀ
=ꢀ
șꢀ
(ꢀ
PD[ꢁꢀ
Rꢀ
ꢅꢂꢇꢄꢀ
ꢅꢀ
ꢇꢂꢈꢀ
ꢇꢂꢁꢀ
ꢅꢂꢆꢁꢀ ꢅꢂꢁꢅꢀ
ꢅꢂꢁꢅꢀ ꢅꢂꢇꢆꢀ
ꢃꢂꢃꢀ
ꢃꢂꢈꢀ
ꢈꢂꢄꢀ
ꢈꢂꢆꢀ
ꢃꢂꢃꢀ
ꢃꢂꢁꢀ
ꢅꢂꢊꢄꢀ ꢅꢂꢃꢄꢀ
ꢅꢂꢈꢄꢀ ꢅꢂꢈꢄꢀ
ꢅꢂꢈꢋꢀ
ꢅꢂꢇꢋꢀ
ꢇꢅꢀ
PPꢀ
ꢇꢂꢄꢀ
ꢅꢂꢃꢄꢀ
ꢇꢀ
ꢅꢂꢁꢄꢀ
Rꢀ
ꢅꢀ
1RWHꢀ
ꢇꢂꢀ3ODVWLFꢀRUꢀPHWDOꢀSURWUXVLRQVꢀRIꢀꢅꢂꢁꢅꢀPPꢀPD[LPXPꢀSHUꢀVLGHꢀDUHꢀQRWꢀLQFOXGHGꢂꢀꢀ
ꢀ5()(5(1&(6ꢀ
ꢀ-('(&ꢀ ꢀ-(,7$ꢀ
ꢀ02ꢎꢇꢄꢁꢀ
287/,1(ꢀ
9(56,21ꢀ
(8523($1ꢀ
352-(&7,21ꢀ
,668(ꢀ'$7(ꢀ
ꢀ,(&ꢀ
ꢉꢉꢎꢇꢁꢎꢁꢊꢀ
ꢅꢆꢎꢅꢁꢎꢇꢉꢀ
ꢀ627ꢁꢃꢃꢎꢇꢀ
Fig 9. Package outline SOT266-1 (SSOP20)
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
16 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
14. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
14.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
14.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
• Board specifications, including the board finish, solder masks and vias
• Package footprints, including solder thieves and orientation
• The moisture sensitivity level of the packages
• Package placement
• Inspection and repair
• Lead-free soldering versus SnPb soldering
14.3 Wave soldering
Key characteristics in wave soldering are:
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
17 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
14.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 10) than a SnPb process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 10 and 11
Table 10. SnPb eutectic process (from J-STD-020D)
Package thickness (mm) Package reflow temperature (C)
Volume (mm3)
< 350
235
350
220
< 2.5
2.5
220
220
Table 11. Lead-free process (from J-STD-020D)
Package thickness (mm) Package reflow temperature (C)
Volume (mm3)
< 350
260
350 to 2000
> 2000
260
< 1.6
260
250
245
1.6 to 2.5
> 2.5
260
245
250
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 10.
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
18 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
maximum peak temperature
= MSL limit, damage level
temperature
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 10. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
19 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
15. Soldering: PCB footprints
ꢇꢆꢂꢈꢅ
ꢅꢂꢃꢅꢀꢌꢁꢅîꢍ
ꢇꢂꢄꢅ
ꢋꢂꢅꢅ ꢇꢇꢂꢅꢅ ꢇꢇꢂꢈꢅ
ꢇꢂꢁꢊꢀꢌꢇꢋîꢍ
VROGHUꢀODQGV
VRWꢀꢁꢂꢃꢀBIU
RFFXSLHGꢀDUHD
SODFHPHQWꢀDFFXUDF\ꢀꢀꢅꢂꢁꢄ
'LPHQVLRQVꢀLQꢀPP
Fig 11. PCB footprint for SOT163-1 (SO20); reflow soldering
ꢇꢂꢁꢅꢀꢌꢁîꢍ
ꢅꢂꢆꢀꢌꢁîꢍ
HQODUJHGꢀVROGHUꢀODQG
ꢇꢂꢄꢅ
ꢋꢂꢅꢅ ꢇꢇꢂꢅꢅ
ꢇꢇꢂꢈꢅ
ꢅꢂꢃꢅꢀꢌꢇꢋîꢍ
ꢇꢂꢁꢊꢀꢌꢇꢋîꢍ
ꢇꢆꢂꢈꢅ
ERDUGꢀGLUHFWLRQ
VROGHUꢀODQGV
VROGHUꢀUHVLVW
SODFHPHQWꢀDFFXUUDF\ꢀꢀꢅꢂꢁꢄ
VRWꢀꢁꢂꢃꢀBIZ
RFFXSLHGꢀDUHD
'LPHQVLRQVꢀLQꢀPP
Fig 12. PCB footprint for SOT163-1 (SO20); wave soldering
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
20 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
)RRWSULQWꢀLQIRUPDWLRQꢀIRUꢀUHIORZꢀVROGHULQJꢀRIꢀ6623ꢃꢇꢀSDFNDJH
627ꢃꢌꢌꢍꢂ
+[
*[
ꢌꢅꢂꢇꢁꢄꢍ
ꢌꢅꢂꢇꢁꢄꢍ
3ꢁ
+\
*\
%\
$\
&
'ꢇ
'ꢁꢀꢌꢈ[ꢍ
3ꢇ
VROGHUꢀODQG
RFFXSLHGꢀDUHD
',0(16,216ꢀLQꢀPP
3ꢇ 3ꢁ $\
%\
&
'ꢇ
'ꢁ
*[
*\
+[
+\
ꢅꢂꢃꢄꢅ ꢅꢂꢊꢄꢅ ꢊꢂꢁꢅꢅ ꢈꢂꢄꢅꢅ ꢇꢂꢆꢄꢅ ꢅꢂꢈꢅꢅ ꢅꢂꢃꢅꢅ ꢃꢂꢉꢅꢅ ꢄꢂꢆꢅꢅ ꢊꢂꢆꢅꢅ ꢊꢂꢈꢄꢅ
VRWꢄꢁꢁꢃꢀBIU
Fig 13. PCB footprint for SOT266-1 (SSOP20); reflow soldering
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
21 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
16. Abbreviations
Table 12. Abbreviations
Acronym
AM
Description
Amplitude Modulation
AMPS
ASK
CMOS
ESD
ESR
FM
Advanced Mobile Phone System
Amplitude Shift Keying
Complementary Metal-Oxide Semiconductor
ElectroStatic Discharge
Equivalent Series Resistor
Frequency Modulation
FSK
IF
Frequency Shift Keying
Intermediate Frequency
L/C
inductor-capacitor filter
RF
Radio Frequency
RSSI
SCA
SINAD
TACS
THD
UHF
TTL
Received Signal Strength Indicator
Subsidiary Communications Authorization
Signal-to-Noise-And-Distortion ratio
Total Access Communication System
Total Harmonic Distortion
Ultra High Frequency
Transistor-Transistor Logic
Very High Frequency
VHF
17. Revision history
Table 13. Revision history
Document ID Release date
Data sheet status
Product data sheet
Change notice
Supersedes
SA605 v.5
20141114
-
SA605 v.4
Modifications:
• Table 8 “SA605 application component list” updated
• Figure 4 “SA605 45 MHz application circuit” updated
SA605 v.4
SA605 v.3
SA605 v.2
SA605 v.1
20140801
20140501
19971107
19921103
Product data sheet
Product data sheet
Product specification
Product specification
-
SA605 v.3
SA605 v.2
SA605 v.1
-
-
ECN 853-1401 18663
-
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
22 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
18. Legal information
18.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
18.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
18.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
23 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
18.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
19. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
SA605
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 November 2014
24 of 25
SA605
NXP Semiconductors
High performance low power mixer FM IF system
20. Contents
1
General description. . . . . . . . . . . . . . . . . . . . . . 1
2
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Ordering options. . . . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3
4
4.1
5
6
6.1
6.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5
7
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal characteristics . . . . . . . . . . . . . . . . . . 6
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Application information. . . . . . . . . . . . . . . . . . . 9
Circuit description. . . . . . . . . . . . . . . . . . . . . . 12
Test information. . . . . . . . . . . . . . . . . . . . . . . . 13
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
8
9
10
11
11.1
12
13
14
Soldering of SMD packages . . . . . . . . . . . . . . 17
Introduction to soldering . . . . . . . . . . . . . . . . . 17
Wave and reflow soldering . . . . . . . . . . . . . . . 17
Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 17
Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 18
14.1
14.2
14.3
14.4
15
16
17
Soldering: PCB footprints. . . . . . . . . . . . . . . . 20
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 22
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 22
18
Legal information. . . . . . . . . . . . . . . . . . . . . . . 23
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 23
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 24
18.1
18.2
18.3
18.4
19
20
Contact information. . . . . . . . . . . . . . . . . . . . . 24
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 November 2014
Document identifier: SA605
相关型号:
©2020 ICPDF网 联系我们和版权申明