PMT21EN,115 [NXP]
PMT21EN - 30 V, 7.4 A N-channel Trench MOSFET SC-73 4-Pin;型号: | PMT21EN,115 |
厂家: | NXP |
描述: | PMT21EN - 30 V, 7.4 A N-channel Trench MOSFET SC-73 4-Pin |
文件: | 总15页 (文件大小:163K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PMT21EN
T223
SO
30 V, 7.4 A N-channel Trench MOSFET
Rev. 1 — 30 August 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
Low-side loadswitch
Switching circuits
High-speed line driver
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min
Typ
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-20
-
20
V
[1]
ID
VGS = 10 V; Tamb = 25 °C
7.4
A
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 7.4 A; Tj = 25 °C
-
18
21
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
D
S
D
gate
D
4
2
drain
source
drain
3
G
4
1
2
3
S
017aaa253
SOT223 (SC-73)
PMT21EN
NXP Semiconductors
30 V, 7.4 A N-channel Trench MOSFET
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMT21EN
SC-73
plastic surface-mounted package with increased heatsink; 4
leads
SOT223
4. Marking
Table 4.
Marking codes
Type number
PMT21EN
Marking code
MT21EN
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current0
Tj = 25 °C
-
VGS
-20
20
V
[1]
[1]
ID
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-
7.4
4.7
30
A
-
A
IDM
Ptot
peak drain current
-
A
[2]
[1]
total power dissipation
-
820
mW
-
1760 mW
8330 mW
Tsp = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
Source-drain diode
IS source current
[1]
Tamb = 25 °C
-
1.9
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
PMT21EN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2011
2 of 15
PMT21EN
NXP Semiconductors
30 V, 7.4 A N-channel Trench MOSFET
017aaa123
017aaa124
120
120
P
der
I
der
(%)
(%)
80
80
40
40
0
−75
0
−75
−25
25
75
125
175
−25
25
75
125
175
T (°C)
j
T (°C)
j
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
017aaa329
2
10
I
Limit R
= V /I
DS D
D
DSon
(A)
10
(1)
(2)
1
(3)
(4)
(5)
–1
10
10
(6)
–2
10
–1
2
1
10
10
V
(V)
DS
IDM = single pulse
(1) tp = 100 μs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 6 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
PMT21EN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2011
3 of 15
PMT21EN
NXP Semiconductors
30 V, 7.4 A N-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
132
62
Max
152
71
Unit
K/W
K/W
[1]
[2]
thermal resistance
from junction to
ambient
in free air
-
-
Rth(j-sp)
thermal resistance
from junction to solder
point
-
8
15
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
017aaa330
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
–3
–2
–1
2
3
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa331
3
10
Z
th(j-a)
(K/W)
2
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
–3
–2
–1
2
3
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMT21EN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2011
4 of 15
PMT21EN
NXP Semiconductors
30 V, 7.4 A N-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
1
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
1.5
2.5
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 7.4 A; Tj = 25 °C
VGS = 10 V; ID = 7.4 A; Tj = 150 °C
VGS = 4.5 V; ID = 6.6 A; Tj = 25 °C
VDS = 10 V; ID = 7.4 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
1
µA
µA
nA
nA
mΩ
mΩ
mΩ
S
-
20
100
100
21
32
26
-
IGSS
gate leakage current
-
-
RDSon
drain-source on-state
resistance
18
27
21
24
gfs
forward
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 15 V; ID = 6 A; VGS = 10 V;
Tj = 25 °C
-
-
-
-
-
-
12.5
1.7
1.8
14.4
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
-
-
-
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
588
154
62
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; VGS = 10 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = 6 A
-
-
-
-
4
-
-
-
-
ns
ns
ns
ns
29
172
77
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = 1.92 A; VGS = 0 V; Tj = 25 °C
-
0.7
1.2
V
PMT21EN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2011
5 of 15
PMT21EN
NXP Semiconductors
30 V, 7.4 A N-channel Trench MOSFET
017aaa332
017aaa244
–3
–4
–5
–6
30
10
10 V
V
= 3.2 V
GS
4.5 V
I
I
D
D
(A)
(A)
3.0 V
20
10
10
10
(1)
(2)
(3)
2.6 V
10
0
2.4 V
2.3 V
0
1
2
3
4
0
1
2
3
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa333
017aaa334
100
100
R
DSon
R
DSon
(mΩ)
(1)
(2)
(3)
(4)
(mΩ)
80
75
60
40
20
0
50
25
0
(1)
(2)
(5)
(6)
2
10
18
26
34
0
2
4
6
8
10
(V)
I
D
(A)
V
GS
Tj = 25 °C
ID = 8 A
(1) VGS = 2.4 V
(2) VGS = 2.6 V
(3) VGS = 3.0 V
(4) VGS = 3.2 V
(5) VGS = 4.5 V
(6) VGS = 10.0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMT21EN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2011
6 of 15
PMT21EN
NXP Semiconductors
30 V, 7.4 A N-channel Trench MOSFET
017aaa335
017aaa328
30
1.6
1.4
1.2
1.0
0.8
0.6
a
(1)
(2)
I
D
(A)
20
10
0
(2)
(1)
0
1
2
3
4
–60
0
60
120
180
V
GS
(V)
T (°C)
j
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
017aaa249
017aaa336
3
3
10
(1)
V
GS(th)
(V)
(1)
C
(pF)
2
1
0
(2)
2
10
(2)
(3)
(3)
10
–1
2
–60
0
60
120
180
10
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) minimum values
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
junction temperature
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMT21EN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2011
7 of 15
PMT21EN
NXP Semiconductors
30 V, 7.4 A N-channel Trench MOSFET
017aaa337
10.0
V
DS
V
GS
(V)
I
D
7.5
V
GS(pl)
V
GS(th)
GS
5.0
2.5
0.0
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
0
5
10
15
Q
G
(nC)
ID = 6 A; VDS = 15 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
017aaa338
8
I
S
(A)
6
4
2
0
(1)
(2)
0.0
0.2
0.4
0.6
0.8
1.0
(V)
V
SD
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
PMT21EN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2011
8 of 15
PMT21EN
NXP Semiconductors
30 V, 7.4 A N-channel Trench MOSFET
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 17. Duty cycle definition
PMT21EN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2011
9 of 15
PMT21EN
NXP Semiconductors
30 V, 7.4 A N-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package with increased heatsink; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-10
06-03-16
SOT223
SC-73
Fig 18. Package outline SOT223 (SC-73)
PMT21EN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2011
10 of 15
PMT21EN
NXP Semiconductors
30 V, 7.4 A N-channel Trench MOSFET
10. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
solder resist
4
6.1
3.9
7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig 19. Reflow soldering footprint for SOT223 (SC-73)
8.9
6.7
1.9
solder lands
4
solder resist
occupied area
6.2
8.7
Dimensions in mm
1
2
3
preferred transport
direction during soldering
1.9
(3×)
2.7
2.7
1.9
(2×)
1.1
sot223_fw
Fig 20. Wave soldering footprint for SOT223 (SC-73)
PMT21EN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2011
11 of 15
PMT21EN
NXP Semiconductors
30 V, 7.4 A N-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMT21EN v.1
20110830
Product data sheet
-
-
PMT21EN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2011
12 of 15
PMT21EN
NXP Semiconductors
30 V, 7.4 A N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status [1] [2]
Product status [3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Right to make changes — NXP Semiconductors reserves the right to make
12.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
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Draft — The document is a draft version only. The content is still under
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representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
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specified use without further testing or modification.
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data sheet shall define the specification of the product as agreed between
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and products using NXP Semiconductors products, and NXP Semiconductors
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completeness of such information and shall have no liability for the
consequences of use of such information.
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damage, costs or problem which is based on any weakness or default in the
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
PMT21EN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2011
13 of 15
PMT21EN
NXP Semiconductors
30 V, 7.4 A N-channel Trench MOSFET
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Notice: All referenced brands, product names, service names and trademarks
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be subject to export control regulations. Export might require a prior
authorization from national authorities.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
non-automotive qualified products in automotive equipment or applications.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMT21EN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2011
14 of 15
PMT21EN
NXP Semiconductors
30 V, 7.4 A N-channel Trench MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .1
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . .9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
12.1
12.2
12.3
12.4
13
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 August 2011
Document identifier: PMT21EN
相关型号:
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