PMT200EN [NXP]
100 V N-channel Trench MOSFET; 100V的N沟道沟槽MOSFET型号: | PMT200EN |
厂家: | NXP |
描述: | 100 V N-channel Trench MOSFET |
文件: | 总13页 (文件大小:220K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PMT200EN
100 V N-channel Trench MOSFET
25 October 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223
(SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
•
•
•
1.3 Applications
Relay driver
•
•
•
•
LED backlight driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
100
20
Unit
V
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
-20
-
V
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 1.5 A; Tj = 25 °C
[1]
3.3
A
Static characteristics
RDSon drain-source on-state
resistance
-
190
235
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
D
1
2
3
4
G
D
S
D
gate
4
drain
source
drain
G
1
2
3
S
SC-73 (SOT223)
017aaa253
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMT200EN
SC-73
plastic surface-mounted package with increased heatsink; 4
leads
SOT223
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMT200EN
T200EN
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
100
20
Unit
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
V
VGS
-20
V
ID
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
[1]
-
3.3
1.8
1.1
13
A
-
A
-
A
IDM
Ptot
peak drain current
-
A
total power dissipation
[2]
[1]
-
800
mW
-
1700 mW
8300 mW
Tsp = 25 °C
-
Tj
junction temperature
-55
150
°C
PMT200EN
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Product data sheet
25 October 2012
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NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
Symbol
Tamb
Parameter
Conditions
Min
-55
-65
Max
150
150
Unit
°C
ambient temperature
storage temperature
Tstg
°C
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
1.6
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
aaa-005458
10
Limit R
= V /I
DS
DSon
D
I
D
(A)
t
= 10 µs
p
1
t
= 100 µs
= 1 ms
p
t
p
DC; T = 25 °C
sp
t
= 10 ms
p
t
= 100 ms
p
-1
10
10
DC; T
= 25 °C;
amb
drain mounting pad 6 cm
2
-2
-1
2
3
10
1
10
10
10
V
(V)
DS
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
PMT200EN
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Product data sheet
25 October 2012
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NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
135
60
Max
155
70
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[2]
-
-
-
-
in free air; t ≤ 5 s
31
36
Rth(j-sp)
thermal resistance
from junction to solder
point
12
15
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
aaa-005459
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
0.75
0.5
10
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMT200EN
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Product data sheet
25 October 2012
4 / 13
NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
aaa-005460
2
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.25
0.1
0.33
0.2
10
0.05
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
100
1.3
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
1.7
2.5
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 1.5 A; Tj = 25 °C
VGS = 10 V; ID = 1.5 A; Tj = 150 °C
VGS = 4.5 V; ID = 1 A; Tj = 25 °C
VDS = 10 V; ID = 1.5 A; Tj = 25 °C
-
-
-
-
-
-
-
-
1
µA
nA
nA
mΩ
mΩ
mΩ
S
-
100
-100
235
520
270
-
-
RDSon
drain-source on-state
resistance
190
420
200
5
gfs
forward
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 80 V; ID = 1.5 A; VGS = 10 V;
Tj = 25 °C
-
-
-
-
-
7.4
0.7
1.9
315
35
10
nC
nC
nC
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
VDS = 80 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
475
-
Coss
PMT200EN
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Product data sheet
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NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Crss
reverse transfer
capacitance
-
25
-
pF
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 50 V; ID = 1.5 A; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
4
-
-
-
-
ns
ns
ns
ns
5
turn-off delay time
fall time
11
3
Source-drain diode
VSD source-drain voltage
IS = 1.6 A; VGS = 0 V; Tj = 25 °C
-
0.8
1.2
V
aaa-005461
aaa-005462
-3
7
6
5
4
3
2
1
0
10
I
D
10 V
4.5 V
(A)
I
D
(A)
3.3 V
-4
-5
-6
10
min
typ
max
3 V
10
10
2.7 V
V
= 2.4 V
GS
0
1
2
3
4
0
1
2
3
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Subthreshold drain current as a function of
gate-source voltage
aaa-005463
aaa-005464
800
1000
R
DSon
(mΩ)
2.6 V
2.8 V
3 V
3.2 V
R
DSon
(mΩ)
800
600
600
400
200
0
400
200
0
T = 150 °C
j
T = 25 °C
j
3.5 V
4.5 V
= 10 V
V
GS
2
0
1
3
4
5
6
(A)
7
0
2
4
6
8
10
(V)
I
D
V
GS
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values
ID = 1.5 A
PMT200EN
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Product data sheet
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NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
aaa-005465
aaa-005466
7
2.5
2.0
1.5
1.0
0.5
0.0
I
D
a
(A)
6
5
4
3
2
1
0
T = 150 °C
j
T = 25 °C
j
0
1
2
3
4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
aaa-005467
aaa-005468
3
3
10
V
GS(th)
(V)
C
max
typ
iss
C
(pF)
2
1
0
C
C
2
oss
10
min
rss
10
-1
10
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
PMT200EN
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Product data sheet
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NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
aaa-005469
10
V
DS
V
GS
(V)
I
8
6
4
2
0
D
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 15. Gate charge waveform definitions
0
2
4
6
8
Q
G
(nC)
ID = 1.5 A; VDS = 80 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-005470
3.5
I
S
(A)
3.0
2.5
2.0
1.5
1.0
0.5
0
T = 150 °C
T = 25 °C
j
j
0.0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
PMT200EN
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Product data sheet
25 October 2012
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NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
9. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3
6.7 3.3
3.7
1
2
3
0.8
0.6
0.32
0.22
2.3
4.6
Dimensions in mm
04-11-10
Fig. 18. Package outline SC-73 (SOT223)
10. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
solder resist
4
6.1
3.9
7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig. 19. Reflow soldering footprint for SC-73 (SOT223)
PMT200EN
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Product data sheet
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NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
8.9
6.7
1.9
solder lands
4
solder resist
occupied area
6.2
8.7
Dimensions in mm
1
2
3
preferred transport
direction during soldering
1.9
(3×)
2.7
2.7
1.9
(2×)
1.1
sot223_fw
Fig. 20. Wave soldering footprint for SC-73 (SOT223)
11. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMT200EN v.1
20121025
Product data sheet
-
-
PMT200EN
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Product data sheet
25 October 2012
10 / 13
NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
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punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
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short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
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PMT200EN
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Product data sheet
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NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
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In the event that customer uses the product for design-in and use in
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12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMT200EN
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Product data sheet
25 October 2012
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NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
13. Contents
1
Product profile ....................................................... 1
General description .............................................. 1
Features and benefits ...........................................1
Applications ..........................................................1
Quick reference data ............................................ 1
1.1
1.2
1.3
1.4
2
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Test information .....................................................8
Package outline ..................................................... 9
Soldering ................................................................ 9
Revision history ...................................................10
3
4
5
6
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Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
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© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 October 2012
PMT200EN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
25 October 2012
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