PHB220N03MT [NXP]
TRANSISTOR 75 A, 25 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power;
| 型号： | PHB220N03MT |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 75 A, 25 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power |
| 文件： | 总13页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHP220N03MT;
PHB220N03MT
N-channel enhancement mode field-effect transistor
Rev. 01 — 19 September 2001
Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP220N03MT in SOT78 (TO-220AB)
PHB220N03MT in SOT404 (D2-PAK).
2. Features
■ Low on-state resistance
■ Fast switching.
3. Applications
■ High frequency computer motherboard DC to DC converters
■ OR-ing applications.
4. Pinning information
Table 1:
Pinning - SOT78 and SOT404, simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
d
s
mb
mb
[1]
2
drain (d)
3
source (s)
drain (d)
g
mb
MBB076
2
1
3
MBK116
MBK106
1
2 3
SOT404 (D2-PAK)
SOT78 (TO-220AB)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
PHP220N03MT series
N-channel enhancement mode field-effect transistor
Philips Semiconductors
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
−
Max
25
Unit
V
VDS
ID
drain-source voltage (DC)
Tj = 25 to 175 °C
Tmb = 25 °C; VGS = 5 V
Tmb = 25 °C
drain current (DC)
−
75
A
Ptot
Tj
total power dissipation
junction temperature
−
230
175
2.7
3.7
W
−
°C
mΩ
mΩ
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C
2.3
3
6. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−
Max
25
Unit
V
VDS
drain-source voltage (DC)
Tj = 25 to 175 °C
VDGR
VGS
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
Tj = 25 to 175 °C; RGS = 20 kΩ
−
25
V
−
±20
±25
V
VGSM
tp ≤ 50 µs; pulsed;
−
V
duty cycle 25%; Tj ≤ 150 °C
ID
drain current (DC)
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
−
75
A
−
75
A
IDM
Ptot
Tstg
Tj
peak drain current
−
400
230
+175
+175
A
total power dissipation
storage temperature
−
W
°C
°C
−55
−55
operating junction temperature
Source-drain diode
IS
source (diode forward) current (DC) Tmb = 25 °C
−
−
75
A
A
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
400
Avalanche ruggedness
EAS non-repetitive avalanche energy
unclamped inductive load;
ID = 75 A; tp = 0.1 ms; VDD = 15 V;
RGS = 50 Ω; VGS = 10V; starting Tj = 25 °C
−
−
500
75
mJ
A
IAS
non-repetitive avalanche current
unclamped inductive load;
VDD = 15 V; RGS = 50 Ω; VGS = 10V;
starting Tj = 25 °C
9397 750 08317
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 19 September 2001
2 of 13
PHP220N03MT series
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03af36
120
120
der
I
(%)
100
P
der
(%)
80
80
60
40
20
0
40
0
0
50
100
150
200
(oC)
0
30
60
90
120
150
T
180
(ºC)
T
mb
mb
Ptot
ID
Pder
=
× 100%
Ider
=
× 100%
-----------------------
-------------------
P
I
°
°
tot(25 C)
D(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03af98
3
10
R
= V / I
DS
DSon
D
t
= 10 µs
100 µs
1 ms
I
p
D
(A)
2
10
DC
10 ms
t
p
P
δ =
T
100 ms
10
t
t
p
T
1
2
10
1
10
V
(V)
DS
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08317
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 19 September 2001
3 of 13
PHP220N03MT series
N-channel enhancement mode field-effect transistor
Philips Semiconductors
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Value Unit
Rth(j-mb) thermal resistance from junction to mounting
base
Figure 4
0.65
K/W
Rth(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
60
50
K/W
K/W
mounted on a printed circuit board; minimum
footprint; SOT404 package
7.1 Transient thermal impedance
03af37
1
Z
th(j-mb)
(K/W)
δ = 0.5
0.2
-1
10
0.1
0.05
t
p
P
δ
=
T
0.02
-2
10
t
t
p
T
single pulse
-3
10
-6
10
-5
-4
10
-3
10
-2
10
-1
10
10
1
10
t
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08317
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 19 September 2001
4 of 13
PHP220N03MT series
N-channel enhancement mode field-effect transistor
Philips Semiconductors
8. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
25
22
−
−
−
−
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage
drain-source leakage current
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
1
2
−
−
3
V
V
V
Tj = 175 °C
0.4
−
−
Tj = −55 °C
3.4
IDSS
VDS = 25 V; VGS = 0 V
Tj = 25 °C
−
−
−
0.02
−
1
µA
µA
nA
Tj = 175 °C
500
100
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
10
RDSon
drain-source on-state resistance
VGS = 10V; ID = 25 A;
Figure 7 and 8
Tj = 25 °C
−
−
2.3
4.1
2.7
4.9
mΩ
mΩ
Tj = 175 °C
VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
−
3
3.7
mΩ
Dynamic characteristics
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
total gate charge
ID = 75 A; VDD = 15 V; VGS = 10 V;
Figure 13
−
−
−
−
−
−
−
−
−
−
200
45
−
−
−
−
−
−
−
−
−
−
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
gate-source charge
gate-drain (Miller) charge
input capacitance
60
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 11
9250
2350
1550
36
output capacitance
reverse transfer capacitance
turn-on delay time
turn-on rise time
VDD = 15 V; ID = 12 A; VGS = 10 V;
RG = 6 Ω; resistive load
78
td(off)
tf
turn-off delay time
turn-off fall time
236
150
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
−
0.85
1.2
V
9397 750 08317
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 19 September 2001
5 of 13
PHP220N03MT series
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03af99
03ag01
400
100
I
I
D
T = 25 ºC
j
D
7 V
V
> I x R
D
DS
DSon
350
300
250
200
150
100
50
(A)
(A)
10 V
20 V
80
60
40
20
0
6 V 5.2 V
Vgs = 5 V
175 ºC
4.8 V
T = 25 ºC
j
4.6 V
4.4 V
4.2 V
4 V
3.8V
3.6V
0
0
1
2
3
4
5
V
6
(V)
0
0.4
0.8
1.2
1.6
2
2.4
(V)
V
GS
DS
Tj = 25 °C
Tj = 25 °C and 175 °C; VDS ≥ ID x RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03af18
03ag00
2
0.006
R
DSon
a
4 V 4.2 V 4.4 V 4.6 V 4.8 V
5 V
(Ω)
0.005
1.6
0.004
0.003
0.002
0.001
0
1.2
0.8
0.4
0
5.2 V
6 V
10 V
V
= 20 V
GS
Tj = 25 ºC
-60
0
60
120
180
0
50
100
150
200
250
300
I
350
(A)
T (ºC)
j
D
Tj = 25 °C
RDSon
a =
----------------------------
RDSon(25 C)
°
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08317
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 19 September 2001
6 of 13
PHP220N03MT series
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03af66
03af65
1
4
I
D
V
GS(th)
(V)
(A)
-1
10
3
2
1
0
max
-2
10
min
typ
max
-3
-4
-5
-6
typ
10
10
10
10
min
0
1
2
3
4
-60
-20
20
60
100
140
180
V
(V)
T (ºC)
GS
j
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ag03
5
10
C
(pF)
4
C
10
iss
C
oss
C
3
rss
10
2
10
-1
2
10
1
10
10
V
(V)
DS
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 08317
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 19 September 2001
7 of 13
PHP220N03MT series
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03ag02
03ag04
100
12
I
S
I
= 75 A
V
= 0 V
D
90
80
70
60
50
40
30
20
10
0
GS
(A)
V
GS
10
8
(V)
V
= 15 V
DD
175 ºC
T = 25 ºC
j
T = 25 ºC
6
j
4
2
0
0.0
0.5
1.0
1.5
0
50
100
150
200
Q
(nC)
V
(V)
G
SD
Tj = 25 °C and 175 °C; VGS = 0 V
ID = 75 A; VDD = 15 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 08317
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 19 September 2001
8 of 13
PHP220N03MT series
N-channel enhancement mode field-effect transistor
Philips Semiconductors
9. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
base
D
1
D
(1)
L
L
2
1
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
L
max.
(1)
2
e
A
b
D
E
L
D
L
1
A
c
UNIT
p
q
Q
1
1
1
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
2.54
Note
1. Terminals in this zone are not tinned.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SC-46
00-09-07
01-02-16
SOT78
3-lead TO-220AB
Fig 14. SOT78 (TO-220AB).
9397 750 08317
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 19 September 2001
9 of 13
PHP220N03MT series
N-channel enhancement mode field-effect transistor
Philips Semiconductors
2
Plastic single-ended surface mounted package (Philips version of D -PAK); 3 leads
(one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
99-06-25
01-02-12
SOT404
Fig 15. SOT404 (D2-PAK)
9397 750 08317
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 19 September 2001
10 of 13
PHP220N03MT series
N-channel enhancement mode field-effect transistor
Philips Semiconductors
10. Revision history
Table 6:
Revision history
CPCN
Rev Date
Description
01 20010919
Product Data; Initial Version
9397 750 08317
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 19 September 2001
11 of 13
PHP220N03MT series
N-channel enhancement mode field-effect transistor
Philips Semiconductors
11. Data sheet status
Data sheet status[1]
Product status[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Product data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
12 of 13
9397 750 08317
Product data
Rev. 01 — 19 September 2001
PHP220N03MT series
N-channel enhancement mode field-effect transistor
Philips Semiconductors
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2
3
4
5
6
7
7.1
8
9
10
11
12
13
© Koninklijke Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 19 September 2001
Document order number: 9397 750 08317
相关型号：
PHB24N03T/T3
TRANSISTOR 24 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3, FET General Purpose Power
NXP
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