PESD5V2S18U [NXP]

ESD protection array; ESD保护阵列
PESD5V2S18U
型号: PESD5V2S18U
厂家: NXP    NXP
描述:

ESD protection array
ESD保护阵列

文件: 总8页 (文件大小:88K)
中文:  中文翻译
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
PESD5V2S18U  
ESD protection array  
Product specification  
2003 Apr 28  
Philips Semiconductors  
Product specification  
ESD protection array  
PESD5V2S18U  
FEATURES  
PINNING  
PIN  
Uni-directional ESD protection of  
up to 18 lines  
DESCRIPTION  
1 to 5  
6 and 16  
7 to 15  
cathode (k1 to k5)  
Maximum peak reverse power:  
PPP = 100 W at tp = 8/20 µs  
common anode (a1; a2)  
cathode (k6 to k14)  
Low clamping voltage:  
VCL = 12 V max. at IZSM = 10 A  
17 to 20  
cathode (k15 to k18)  
Low leakage current:  
IR = 100 nA typ. at VRWM = 5.2 V  
handbook, 4 columns  
IEC 61000-4-2, level 4 (ESD);  
1
2
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
15 kV (air) and 8 kV (contact).  
1
20  
3
APPLICATIONS  
4
Printer parallel ports  
5
Computers and peripherals  
Communication systems.  
6
7
DESCRIPTION  
8
Monolithic ESD protection device  
designed to protect up to  
18 transmission or data lines from the  
damage caused by electrostatic  
discharge (ESD) and surge pulses.  
9
10  
11  
10  
MHC510  
Fig.1 Simplified outline (SSOP20; SOT339-1) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
IPP  
PARAMETER  
CONDITIONS  
tp = 8/20 µs  
tp = 8/20 µs  
MIN.  
MAX.  
10  
UNIT  
non-repetitive peak reverse current  
A
PPP  
non-repetitive peak reverse power  
dissipation  
100  
W
Tstg  
Tj  
storage temperature  
65  
65  
+150  
+150  
°C  
°C  
kV  
kV  
junction temperature  
electrostatic discharge voltage  
IEC 61000-4-2 (contact discharge) 30  
HBM MIL-Std 883  
10  
ESD standards compliance  
IEC 61000-4-2, level 4 (ESD)  
HBM MIL-Std 883, class 3  
>15 kV (air); >8 kV (contact)  
>4 kV  
2003 Apr 28  
2
Philips Semiconductors  
Product specification  
ESD protection array  
PESD5V2S18U  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-a  
thermal resistance from junction to  
ambient  
one or more diodes loaded  
135  
K/W  
Note  
1. Refer to SOT339-1 standard mounting conditions.  
ELECTRICAL CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
5.2  
UNIT  
VRWM  
crest working reverse  
voltage  
V
IR  
reverse current  
VRWM = 5.2 V  
IZSM = 3 A; tp = 8/20 µs; see Fig.5  
ZSM = 10 A; tp = 8/20 µs; see Fig.5  
0.1  
1
µA  
V
VCL  
clamping voltage  
8
I
12  
7.2  
40  
8
V
VBR  
rdiff  
breakdown voltage  
IZ = 5 mA  
6.4  
6.8  
V
differential resistance  
IZ = 1 mA  
IZ = 5 mA  
Cd  
diode capacitance  
VR = 0; f = 1 MHz; see Fig.4  
100  
pF  
2003 Apr 28  
3
Philips Semiconductors  
Product specification  
ESD protection array  
PESD5V2S18U  
MHC485  
MHC486  
3
2
10  
10  
handbook, halfpage  
handbook, halfpage  
P
I
ZSM  
ZSM  
(W)  
(A)  
2
10  
10  
10  
10  
1
10  
2  
1  
2  
1  
10  
1
10  
10  
1
10  
t
(ms)  
t (ms)  
p
p
Fig.2 Maximum non-repetitive peak reverse  
power as a function of pulse duration.  
Fig.3 Maximum non-repetitive peak reverse  
current as a function of pulse duration.  
MHC488  
MHC487  
110  
11  
handbook, halfpage  
handbCook, halfpage  
d
V
CL  
(V)  
(pF)  
100  
10  
90  
80  
70  
9
8
7
60  
50  
40  
3
4
5
6
7
8
9
I
10  
(A)  
0
1
2
3
4
5
6
V
(V)  
PP  
R
f = 1 MHz; Tamb = 25 °C  
tp = 8/20 µs  
Fig.4 Diode capacitance as a function of reverse  
voltage; typical values.  
Fig.5 Clamping voltage as a function of peak  
reverse pulse current; typical values.  
2003 Apr 28  
4
Philips Semiconductors  
Product specification  
ESD protection array  
PESD5V2S18U  
ESD TESTER  
RG 223/U  
50 coax  
DIGITIZING  
OSCILLOSCOPE  
R
Z
450 Ω  
10×  
ATTENUATOR  
C
Z
50 Ω  
note 1  
Note 1: attenuator is only used for open  
socket high voltage measurements  
IEC 1000-4-2 network  
C
= 150 pF; R = 330 Ω  
Z
Z
1/18 PESD5V2S18U  
vertical scale = 200 V/Div  
horizontal scale = 50 ns/Div  
vertical scale = 5 V/Div  
horizontal scale = 50 ns/Div  
GND  
GND  
unclamped +1 kV ESD voltage waveform  
(IEC 100042 network)  
clamped +1 kV ESD voltage waveform  
(IEC 100042 network)  
GND  
GND  
vertical scale = 200 V/Div  
horizontal scale = 50 ns/Div  
vertical scale = 5 V/Div  
horizontal scale = 50 ns/Div  
unclamped 1 kV ESD voltage waveform  
(IEC 100042 network)  
clamped 1 kV ESD voltage waveform  
(IEC 100042 network)  
MHC489  
Fig.6 ESD clamping test set-up and waveforms.  
2003 Apr 28  
5
Philips Semiconductors  
Product specification  
ESD protection array  
PESD5V2S18U  
PACKAGE OUTLINE  
SSOP20: plastic shrink small outline package; 20 leads; body width 5.3 mm  
SOT339-1  
D
E
A
X
c
H
v
M
A
y
E
Z
20  
11  
Q
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
1
10  
detail X  
w
M
b
p
e
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
(1)  
(1)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
Z
θ
1
2
3
p
E
p
max.  
8o  
0o  
0.21  
0.05  
1.80  
1.65  
0.38  
0.25  
0.20  
0.09  
7.4  
7.0  
5.4  
5.2  
7.9  
7.6  
1.03  
0.63  
0.9  
0.7  
0.9  
0.5  
mm  
2
0.65  
0.25  
1.25  
0.2  
0.13  
0.1  
Note  
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
99-12-27  
03-02-19  
SOT339-1  
MO-150  
2003 Apr 28  
6
Philips Semiconductors  
Product specification  
ESD protection array  
PESD5V2S18U  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2003 Apr 28  
7
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2003  
SCA75  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/01/pp8  
Date of release: 2003 Apr 28  
Document order number: 9397 750 10889  

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