PESD5V2S2UT [NXP]
Double ESD protection diodes in SOT23 package; 双重ESD保护二极管，采用SOT23封装
| 型号： | PESD5V2S2UT |
| 厂家： | 
NXP |
| 描述： | Double ESD protection diodes in SOT23 package |
| 文件： | 总13页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PESDxS2UT series
Double ESD protection diodes in
SOT23 package
Product specification
2004 Apr 15
Supersedes data of 2003 Aug 20
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
FEATURES
QUICK REFERENCE DATA
• Uni-directional ESD protection of up to two lines
• Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs
• Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A
• Ultra-low reverse leakage current: IRM < 700 nA
• ESD protection > 23 kV
SYMBOL
PARAMETER
VALUE
UNIT
VRWM
reverse stand-off
voltage
3.3, 5.2, 12, 15
and 24
V
Cd
diode capacitance 207, 152, 38, 32 pF
VR = 0 V;
f = 1 MHz
and 23
2
• IEC 61000-4-2; level 4 (ESD)
number of
protected lines
• IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.
APPLICATIONS
PINNING
PIN
• Computers and peripherals
• Communication systems
• Audio and video equipment
• High speed data lines
• Parallel ports.
DESCRIPTION
1
2
3
cathode 1
cathode 2
common anode
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT23
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
1
2
3
1
2
3
MARKING
TYPE NUMBER
PESD3V3S2UT
MARKING CODE(1)
*U9
*U1
*U2
*U3
*U4
sym022
001aaa490
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
Fig.1 Simplified outline (SOT23) and symbol.
Note
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
2004 Apr 15
2
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
−
plastic surface mounted package; 3 leads
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Ppp
PARAMETER
peak pulse power
CONDITIONS
MIN.
MAX.
UNIT
8/20 µs pulse; notes 1 and 2
PESD3V3S2UT
PESD5V2S2UT
−
−
−
−
−
330
W
260
180
160
160
W
W
W
W
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
Ipp
peak pulse current
PESD3V3S2UT
8/20 µs pulse; notes 1 and 2
−
−
−
−
−
−
18
A
PESD5V2S2UT
15
A
PESD12VS2UT
5
A
PESD15VS2UT
5
A
PESD24VS2UT
3
A
Tj
junction temperature
operating ambient temperature
storage temperature
150
+150
+150
°C
°C
°C
Tamb
Tstg
−65
−65
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.
2. Measured across either pins 1 and 3 or pins 2 and 3.
2004 Apr 15
3
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
ESD maximum ratings
SYMBOL
ESD
PARAMETER
CONDITIONS
VALUE
UNIT
electrostatic discharge
capability
IEC 61000-4-2 (contact discharge);
notes 1 and 2
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
HBM MIL-Std 883
PESDxS2UT series
30
30
30
30
23
kV
kV
kV
kV
kV
10
kV
Notes
1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3.
2. Measured across either pins 1 and 3 or pins 2 and 3.
ESD standards compliance
ESD STANDARD
IEC 61000-4-2; level 4 (ESD); see Fig.3
HBM MIL-Std 883; class 3
CONDITIONS
>15 kV (air); > 8 kV (contact)
>4 kV
001aaa191
MLE218
I
pp
120
handbook, halfpage
100 %
90 %
I
pp
100 % I ; 8 µs
pp
(%)
80
−t
e
50 % I ; 20 µs
pp
40
10 %
t
0
t = 0.7 to 1 ns
r
0
10
20
30
40
30 ns
t (µs)
60 ns
Fig.2 8/20 µs pulse waveform according to
Fig.3 ElectroStatic Discharge (ESD) pulse
waveform according to IEC 61000-4-2.
IEC 61000-4-5.
2004 Apr 15
4
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VRWM
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
reverse stand-off voltage
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
reverse leakage current
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
breakdown voltage
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
diode capacitance
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
clamping voltage
PESD3V3S2UT
−
−
−
−
−
−
−
−
−
−
3.3
V
V
V
V
V
5.2
12
15
24
IRM
VRWM = 3.3 V
−
−
−
−
−
0.7
2
1
1
1
1
µA
µA
µA
µA
µA
VRWM = 5.2 V
VRWM = 12 V
0.15
<0.02
<0.02
<0.02
V
RWM = 15 V
VRWM = 24 V
IZ = 5 mA
VBR
5.2
5.6
6.0
V
V
V
V
V
6.4
6.8
7.2
14.7
17.6
26.5
15.0
18.0
27.0
15.3
18.4
27.5
Cd
f = 1 MHz; VR = 0 V
−
−
−
−
−
207
152
38
300
200
75
pF
pF
pF
pF
pF
32
70
23
50
V(CL)R
notes 1 and 2
Ipp = 1 A
Ipp = 18 A
Ipp = 1 A
Ipp = 15 A
Ipp = 1 A
Ipp = 5 A
Ipp = 1 A
Ipp = 5 A
Ipp = 1 A
Ipp = 3 A
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
7
V
V
V
V
V
V
V
V
V
V
20
9
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
20
19
35
23
40
36
70
2004 Apr 15
5
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
SYMBOL
Rdiff
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
differential resistance
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
IR = 1 mA
−
−
−
−
−
−
−
−
−
−
400
Ω
IR = 1 mA
IR = 1 mA
IR = 1 mA
IR = 0.5 mA
80
Ω
Ω
Ω
Ω
200
225
300
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.
2. Measured either across pins 1 and 3 or pins 2 and 3.
GRAPHICAL DATA
001aaa147
001aaa193
4
10
1.2
P
pp
P
pp
(W)
P
pp(25˚C)
3
10
0.8
(1)
(2)
2
10
0.4
10
0
2
3
4
1
10
10
10
10
0
50
100
150
200
t
(µs)
p
T (°C)
j
(1) PESD3V3S2UT and PESD5V2S2UT.
(2) PESD12VS2UT, PESD15VS2UT, PESD24VS2UT
Tamb = 25 °C.
tp = 8/20 µs exponential decay waveform; see Fig.2.
Fig.5 Relative variation of peak pulse power as a
function of junction temperature; typical
values.
Fig.4 Peak pulse power dissipation as a function
of pulse time; typical values.
2004 Apr 15
6
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
001aaa148
001aaa149
240
50
C
d
C
d
(pF)
200
(pF)
40
160
120
80
30
20
10
0
(1)
(2)
(1)
(2)
(3)
40
0
1
2
3
4
5
0
5
10
15
20
25
V
R
(V)
V
(V)
R
(1) PESD12VS2UT; VRWM = 12 V.
(2) PESD15VS2UT; VRWM = 15 V.
(3) PESD24VS2UT; VRWM = 24 V.
(1) PESD3V3S2UT; VRWM = 3.3 V.
(2) PESD5V2S2UT; VRWM = 5 V.
Tamb = 25 °C; f = 1 MHz.
Tamb = 25 °C; f = 1 MHz.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
2004 Apr 15
7
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
001aaa270
10
I
R
I
R(25˚C)
(1)
1
−1
10
−100
−50
0
50
100
150
T (°C)
j
(1) PESD3V3S2UT; VRWM = 3.3 V.
PESD5V2S2UT; VRWM = 5 V.
IR is less than 10 nA at 150 °C for:
PESD12V52UT; VRWM = 12 V.
PESD15VS2UT; VRWM = 15 V.
PESD24VS2UT; VRWM = 24 V.
Fig.8 Relative variation of reverse leakage
current as a function of junction
temperature; typical values.
2004 Apr 15
8
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
ESD TESTER
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
R
Z
450 Ω
10×
ATTENUATOR
C
Z
50 Ω
note 1
Note 1: IEC61000-4-2 network
= 150 pF; R = 330 Ω
C
Z
Z
D.U.T.: PESDxS2UT
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 20 V/div
horizontal scale = 50 ns/div
PESD24VS2UT
GND
GND
GND
GND
GND
PESD15VS2UT
PESD12VS2UT
PESD5V2S2UT
PESD3V3S2UT
GND
unclamped +1 kV ESD voltage waveform
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
(IEC61000-4-2 network)
GND
GND
vertical scale = 10 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
001aaa492
Fig.9 ESD clamping test set-up and waveforms.
9
2004 Apr 15
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
APPLICATION INFORMATION
The PESDxS2UT series is designed for uni-directional protection for up to two lines against damage caused by
ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UT series may be used on lines where the signal
polarities are below ground. PESDxS2UT series provide a surge capability of up to 330 W (Ppp) per line for an 8/20 µs
waveform.
line 1 to be protected
line 2 to be protected
line 1 to be protected
PESDxS2UT
ground
PESDxS2UT
ground
unidirectional protection
of two lines
bidirectional protection
of one line
001aaa491
Fig.10 Typical application: ESD protection of data lines.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The
following guidelines are recommended:
• Place the PESDxS2UT as close as possible to the input terminal or connector.
• The path length between the PESDxS2UT and the protected line should be minimized.
• Keep parallel signal paths to a minimum.
• Avoid running protected conductors in parallel with unprotected conductors.
• Minimize all printed-circuit board conductive loops including power and ground loops.
• Minimize the length of transient return paths to ground.
• Avoid using shared return paths to a common ground point.
• Ground planes should be used whenever possible. For multilayer printed-circuit boards use ground vias.
2004 Apr 15
10
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2004 Apr 15
11
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Apr 15
12
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/03/pp13
Date of release: 2004 Apr 15
Document order number: 9397 750 12823
相关型号：
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