OM5926HN [NXP]
IC SPECIALTY TELECOM CIRCUIT, PQCC20, 5 X 5 MM, 0.85 MM HEIGHT, PLASTIC, SOT-662-1, HVQFN-20, Telecom IC:Other;
| 型号： | OM5926HN |
| 厂家： | 
NXP |
| 描述： | IC SPECIALTY TELECOM CIRCUIT, PQCC20, 5 X 5 MM, 0.85 MM HEIGHT, PLASTIC, SOT-662-1, HVQFN-20, Telecom IC:Other 电信 电信集成电路 |
| 文件： | 总28页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
OM5926HN
I2C-bus SIM card interface
Product specification
2003 Feb 19
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
CONTENTS
1
2
3
4
5
6
7
FEATURES
APPLICATIONS
GENERAL DESCRIPTION
ORDERING INFORMATION
QUICK REFERENCE DATA
BLOCK DIAGRAM
PINNING INFORMATION
7.1
7.2
Pinning
Pin description
8
FUNCTIONAL DESCRIPTION
8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.8
8.9
I2C-bus control
Power supply
DC-to-DC converter
Power-down mode
Off mode
Sequencer and clock counter
Clock circuitry
Protection
I/O circuitry
9
LIMITING VALUES
10
11
12
13
14
15
15.1
HANDLING
THERMAL CHARACTERISTICS
CHARACTERISTICS
APPLICATION INFORMATION
PACKAGE OUTLINE
SOLDERING
Introduction to soldering surface mount
packages
15.2
15.3
15.4
15.5
Reflow soldering
Wave soldering
Manual soldering
Suitability of surface mount IC packages for
wave and reflow soldering methods
16
17
18
19
DATA SHEET STATUS
DEFINITIONS
DISCLAIMERS
PURCHASE OF PHILIPS I2C COMPONENTS
2003 Feb 19
2
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
1
FEATURES
• Subscriber Identification Module (SIM) card interface in
accordance with GSM11.11, GSM11.12 (Global System
for Mobile communication) and ISO 7816 requirements
• VCC regulation (3 or 5 V ±8%) with controlled rise and
fall times
• Off mode with 5 µA current
• One protected and buffered pseudo-bidirectional I/O line
• Control from a microcontroller via a 400 kHz slave
I2C-bus (address 48H)
(I/O referenced to VCC and SIMI/O referenced to VDDI
)
• Clock generation (up to 10 MHz) with synchronous start
and frequency quadrupling
• Interface signals supplied by an independent voltage
(1.5 ≤ VDDI ≤ 6 V).
• Clock stop LOW, clock stop HIGH or 1.25 MHz (from
internal oscillator) for cards Power-down mode
2
APPLICATIONS
• Automatic activation and deactivation sequences of an
independent sequencer
• GSM mobile phones.
• Automatic processing of pin RST with the counting of
the 41928 CLK cycles for the beginning of the
Answer-To-Reset (ATR)
3
GENERAL DESCRIPTION
The OM5926HN is a low cost one chip SIM interface, in
accordance with GSM11.11, GSM11.12 with card current
limitation. Controlled by the I2C-bus, it is optimized in
terms of board space, external components count and
connection count (see Chapter 13).
• Warm reset command
• Supply voltage supervisor for power-on reset, spike
killing and emergency deactivation in case of supply
drop-out
Due to the integrated DC-to-DC converter, the device
ensures full cross-compatibility between 3 or 5 V cards
and 3 or 5 V environments. The very low power
consumption in Power-down mode and Off mode saves
battery power.
• DC-to-DC converter (doubler, tripler or follower)
allowing operation in a 3 or 5 V environment
(2.5 ≤ VDD ≤ 6 V)
• Enhanced Electrostatic Discharge (ESD) protection on
card side (6 kV minimum)
• Power-down mode with several active features and
current reduction
4
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
OM5926HN
HVQFN20 plastic, heatsink very thin quad flat package; no leads; 20 terminals;
SOT662-1
body 5 × 5 × 0.85 mm
2003 Feb 19
3
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
5
QUICK REFERENCE DATA
SYMBOL
VDD
PARAMETER
CONDITIONS
MIN.
2.5
TYP. MAX. UNIT
supply voltage on pins VDDS
and VDDP
−
6
V
IDD
supply current on pins VDDS
and VDDP
Off mode; VDD = 3 V
−
−
−
−
5
µA
µA
Power-down mode; VDD = 3V;
500
VCC = 5 V; ICC = 100 µA; SIMCLK
connected to PGND or VDDI
;
CLK is stopped
active mode; VDD = 3 V; VCC = 3 V;
CC = 6 mA; fCLK = 3.25 MHz
−
−
−
−
−
−
−
−
18
50
10
30
mA
mA
mA
mA
I
active mode; VDD = 3 V; VCC = 5 V;
ICC = 10 mA; fCLK = 3.25 MHz
active mode; VDD = 5 V; VCC = 3 V;
ICC = 6 mA; fCLK = 3.25 MHz
active mode; VDD = 5 V; VCC = 5 V;
ICC = 10 mA; fCLK = 3.25 MHz
VDDI
VCC
interface signal supply voltage
card supply voltage
1.5
4.6
−
6
V
V
5 V card; active mode;
5
5.4
0 < ICC < 15 mA; 40 nAs dynamic
load on 200 nF capacitor
3 V card; active mode;
2.75
3
3.25
V
0 < ICC < 10 mA; 24 nAs dynamic
load on 200 nF capacitor
5 V card; PDOWN = 1; ICC < 5 mA
3 V card; PDOWN = 1; ICC < 5 mA
4.6
2.75
0.05
−
−
−
−
−
−
−
−
5.4
V
3.25
0.25
120
150
20
V
SR
slew rate on VCC (rise and fall) CL(max) = 200 nF
deactivation time
V/µs
µs
tde
tact
activation time
−
µs
fi(SIMCLK)
Tamb
clock input frequency
0
MHz
°C
operating ambient temperature
−40
+85
2003 Feb 19
4
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
6
BLOCK DIAGRAM
V
V
DDP
2.2 µF
DDS
100 nF
100 nF
100 nF
S3 S4 S1 S2
5
7
3
8
6
15
VUP
9
SIMMERRN
OM5926HN
SUPPLY
SUPERVISOR
DC/DC
CONVERTER
DEL
16
18
10 nF
PGND
4
V
13
DDI
V
SEQUENCER
CC
200
nF
SAD0
SAD1
14
10
RST
I/O
2
I C-BUS
AND
19
20
2
OSCILLATOR
SDA
REGISTERS
ANALOG
DRIVERS
AND
SCL
PWROFF
PROTECTIONS
17
SIMI/O
20 kΩ
PRES
CLOCK
COUNTER
pull-up
to V
DDI
CLOCK
CIRCUITRY
12
1
CLK
SIMCLK
11
MGU806
SGND
Fig.1 Block diagram.
5
2003 Feb 19
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
7
PINNING INFORMATION
Pinning
7.2
Pin description
7.1
Table 1 HVQFN20 package
SYMBOL PIN
DESCRIPTION
external clock input
SIMCLK
1
2
PWROFF
control input for entering the Off mode
(active LOW)
S1
3
capacitor connection for the DC-to-DC
converter (between S1 and S2)
PGND
S3
4
5
power ground
handbook, halfpage
capacitor connection for the DC-to-DC
converter (between S3 and S4)
VDDP
S4
6
7
power supply voltage
capacitor connection for the DC-to-DC
converter (between S3 and S4)
S3
5
4
3
2
1
11 SGND
12 CLK
PGND
S1
S2
8
9
capacitor connection for the DC-to-DC
converter (between S1 and S2)
V
OM5926HN
13
14
15
CC
RST
V
PWROFF
SIMCLK
VUP
DC-to-DC converter output (must be
decoupled with a 100 nF capacitor to
ground)
DDS
I/O
10 input/output to and from the card
reader (C7)
MGU807
SGND
CLK
VCC
11 signal ground
12 clock output to the card reader (C3)
13 supply voltage to the card reader (C1)
14 reset output to the card reader (C2)
15 signal supply voltage
RST
VDDS
DEL
16 external capacitor connection for the
delay on the voltage supervisor
SIMI/O
VDDI
17 input/output to and from the
microcontroller (internal 20 kΩ pull-up
resistor connected to VDDI
)
18 supply voltage for the interface signals
with the system
SDA
SCL
19 I2C-bus serial data input/output
20 I2C-bus serial clock input
Fig.2 Pin configuration (bottom view).
2003 Feb 19
6
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
8
FUNCTIONAL DESCRIPTION
• To request the card status (hardware problem occurred,
unresponsive card after activation, supply drop-out
detected by the voltage supervisor, card powered or not)
The block diagram of the OM5926HN is shown in Fig.1.
The functional blocks will be described in the following
sections. It is assumed that the reader of this specification
is familiar with GSM11.11 and ISO 7816 terminology.
• To configure the SIMI/O and I/O pins in the
high-impedance state.
I2C-bus control
8.1.1
STRUCTURE OF THE I2C-BUS DATA FRAMES
8.1
The I2C-bus is used:
• Commands to the OM5926HN:
– START/ADDRESS/WRITE
– COMMAND BYTE
• To configure the clock to the card in active mode
(1⁄4fSIMCLK and fSIMCLK
)
• To configure the clock to the card in power reduction
mode (stop LOW, stop HIGH or ±1.25 MHz derived
from the internal oscillator)
– STOP.
The fixed address is 0100100. The command bits are
described in Table 2. Commands are executed on the
rising edge of the 9th SCL pulse of the command byte.
• For selecting operation with a 3 or 5 V card
• For starting or stopping sessions (cold reset)
• For initiating a warm reset
• Status from the OM5926HN (see Table 4). The fixed
address is 0100100.
• For entering or leaving the Power-down mode
Table 2 Description of the command bits; note 1
BIT
SYMBOL
DESCRIPTION
0
START/STOP Logic 1 initiates an activation sequence and a cold reset procedure. Logic 0 initiates a
deactivation sequence.
1
WARM
Logic 1 initiates a warm reset procedure. It will be automatically reset by hardware
when the card starts answering, or when the 2 times 41928 CLK pulses have expired
without answer from the card.
2
3
3 V/5 VN
PDOWN
Logic 1 sets the card supply voltage VCC to 3 V. Logic 0 sets the card supply voltage
VCC to 5 V.
Logic 1 applies on the CLK pin the frequency defined by bits CLKPD1 and CLKPD2,
and enters a reduced current consumption mode. Logic 0 sets the circuit back to
normal mode.
4
5
6
7
CLKPD1
CLKPD2
DT/DFN
I/OEN
These 2 bits determine the clock to the card at Power-down as shown in Table 3.
Logic 0 sets fCLK to 1⁄4fSIMCLK (in active mode). Logic 1 sets fCLK to fSIMCLK
.
Logic 1 will transfer I/O to SIMI/O. Logic 0 sets I/O and SIMI/O to the high-impedance
state.
Note
1. All bits are cleared at reset.
Table 3 Clock selection to the card at power-down
CLKPD2
CLKPD1
FUNCTION
0
0
1
1
0
1
0
1
clock stop LOW
clock is 1⁄2fosc
clock stop HIGH
don’t use
2003 Feb 19
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Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
Table 4 Description of the status bits; note 1
BIT
SYMBOL
DESCRIPTION
Bit 0 is not used and is fixed to logic 1.
0
1
2
3
−
−
Bit 1 is not used and is fixed to logic 0.
Bit 2 is not used and is fixed to logic 0.
−
SUPL
Logic 1 when the voltage supervisor has signalled a fault. Logic 0 when the status is
read-out.
4
5
−
Bit 4 is not used and is fixed to logic 0.
MUTE
Logic 1 when a card has not answered after 2 times 41928 CLK cycles. Logic 0 when
the status is read-out.
6
7
EARLY
Logic 1 when a card has answered between 200 and 352 CLK cycles. Logic 0 when
the status is read-out.
ACTIVE
Logic 1 when the card is power-on. Logic 0 when the card is power-off.
Note
1. In the event of supply drop-out during a session, the card will be automatically deactivated, bit START = 0 and the
corresponding status bit = 1. The status bit will be logic 0 when the microcontroller reads out the status register, on
the 7th SCL pulse. After a supply drop-out, bit SUPL = 1.
8.2
Power supply
The voltage supervisor (see Fig.3) senses VDDS and
generates an alarm pulse when VDD is too low to ensure
proper operation. The alarm pulse width (tW) is defined by
an external capacitor connected to pin DEL (1 ms per 1 nF
typical).
The circuit operates within a supply voltage range of
2.5 to 6 V. The supply pins are VDDS and SGND.
Pins VDDP and PGND only supply the DC-to-DC converter
for the analog drivers to the card and must be decoupled
externally because of the large current spikes that the card
and the DC-to-DC converter can create. An integrated
spike killer ensures the card contacts remain inactive
during power-up or power-down. An internal voltage
reference is generated which is used for the DC-to-DC
converter, the voltage supervisor and the VCC generator.
During the alarm pulse, the I2C-bus is unresponsive but
will become operational at the end of the alarm pulse.
Bit SUPL is set as long as the status has not been read.
The alarm pulse will also block any spurious signals on the
card contacts during microcontroller reset, and will force
an automatic deactivation of the contacts in the event of
supply drop-out.
All interface signals with the microcontroller (PWROFF,
SIMCLK, SCL, SDA and SIMI/O) are referenced to a
separate supply pin VDDI, which may be different from VDD
(1.5 ≤ VDDI ≤ 6 V).
If a supply drop-out occurs during a session, the START bit
is cleared and an automatic deactivation is initiated.
The pull-up resistors on bus lines SDA and SCL may be
referenced to a voltage higher than VDDI. This allows the
use of peripherals which do not operate at VDDI
.
2003 Feb 19
8
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
V
DDS
DEL
t
t
W
W
SIMERR
(internal signal)
status read
after event
2
2
I C-bus
I C-bus
2
2
2
I C-bus unresponsive
I C-bus OK
I C-bus OK
unresponsive
unresponsive
MGR436
Fig.3 Voltage supervisor.
8.3
DC-to-DC converter
The recognition of the supply voltage is done by the
OM5926HN at approximately 3.3 V.
The whole circuit is powered by VDDS, except for the VCC
generator, the other card contact buffers and the interface
signals.
When a card session is requested by the microcontroller,
the sequencer will first start the DC-to-DC converter, which
is a switched capacitors type, clocked by an internal
oscillator at a frequency fosc of approximately 2.5 MHz.
The output voltage VVUP is regulated at approximately
4.5 or 6.5 V and subsequently fed to the VCC generator.
VCC and PGND are used as a reference for all other card
contacts.
The DC-to-DC converter acts as a doubler or a tripler,
depending on the supply voltage VDD and the card supply
voltage VCC. There are basically four possible situations:
• VDD = 3 V and VCC = 3 V; the DC-to-DC converter acts
as a doubler with a regulation of VVUP at approximately
4.5 V
• VDD = 3 V and VCC = 5 V; the DC-to-DC converter acts
as a tripler with a regulation of VVUP at approximately
6.5 V
• VDD = 5 V and VCC = 3 V; the DC-to-DC converter is
disabled and VDD is applied to pin VUP
• VDD = 5 V and VCC = 5 V; the DC-to-DC converter acts
as a doubler with a regulation of VVUP at approximately
6.5 V.
2003 Feb 19
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Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
8.4
Power-down mode
After 41928 CLK pulses, if no start bit on I/O has been
detected, the sequencer toggles RST to HIGH and counts
another 41928 CLK pulses. If, again, no start bit has been
detected, the MUTE bit is set in the Status register.
The Power-down mode is used for current consumption
reduction when the card is in sleep mode.
For entering the Power-down mode, the microcontroller
must first select the state of CLK (stop LOW, stop HIGH or
1.25 MHz from the internal oscillator) using the CLKPD1
and CLKPD2 bits. Subsequently, the microcontroller
sends the command PDOWN, CLK is switched to the
value predefined by the CLKPD1 and CLKPD2 bits, and
SIMCLK may be stopped (HIGH or LOW).
If a start bit has been detected during the two 41928 CLK
pulses slots, the clock counter is stopped, RST is kept at
the same level and the session can go on between the
card and the system.
The clock counter ignores any start bit during the first
200 CLK pulses of both slots. If a start bit is detected
between 200 and 352 CLK pulses of both slots, then the
EARLY bit is set in the Status register.
If the selected CLK is stopped, the biasing currents in the
buffers to the card will be reduced. The voltage supervisor
and all control functions remain active. The maximum
current taken by the card when CLK is stopped should be
less than 5 mA.
The deactivation is initiated either by the microcontroller
(STOP command), or automatically by the OM5926HN in
the event of a short-circuit or supply voltage drop-out
detected by the voltage supervisor. During deactivation,
RST will go LOW, CLK is stopped, I/O is disabled and VCC
goes LOW.
Before leaving the Power-down mode, the clock signal
must first be applied to SIMCLK, then the PDOWN bit
must be set to logic 0.
8.7
Clock circuitry
8.5
Off mode
The clock to the card is either derived from the SIMCLK pin
(2 to 20 MHz) or from the internal oscillator.
The Off mode is entered when the PWROFF signal is
LOW. In this mode, no function is valid. This mode avoids
switching off the power supply of the device, and gives a
current consumption less than 5 µA. Before entering the
Off mode, the card must be deactivated.
During a card session, fCLK may be chosen to be 1⁄4fSIMCLK
or fSIMCLK depending on the state of the DT/DFN bit.
For the card Sleep mode, CLK may be chosen stop LOW,
stop HIGH or 1⁄2fosc (1.25 MHz) with bits CLKPD1 and
CLKPD2. This predefined value will be applied to CLK
when the PDOWN bit is set to logic 1.
The Off mode is left when the PWROFF signal returns to
HIGH. This re-initializes the voltage supervisor, and has
the same effect as a reset of the device.
The first CLK pulse has the correct width, and all
frequency changes are synchronous, ensuring that no
pulse is smaller than 45% of the shortest period.
8.6
Sequencer and clock counter
The sequencer handles the activation and deactivation
sequences in accordance with GSM11.11 and ISO 7816,
even in the event of an emergency (card take-out,
short-circuit and supply drop-out). The sequencer is
clocked with the internal oscillator frequency (fosc).
The duty cycle is within 45 and 55% in the stable state, the
rise and fall times are less than 8% of the period and
precautions must be taken to ensure that there is no
overshoot or undershoot.
The activation is initiated with the START command (only
if the card is present, and if the voltage supervisor does not
detect a fault on the supply). During activation, VCC goes
HIGH and subsequently I/O is enabled and CLK is started
with RST = LOW. The clock counter counts the CLK
pulses until a start bit is detected on I/O.
2003 Feb 19
10
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
8.7.1
ACTIVATION SEQUENCE
If a start bit is detected on I/O and the clock counter is
stopped with RST = HIGH, the card session may continue.
If not, the MUTE bit is set in the Status register. The
microcontroller may initiate a deactivation sequence by
setting the START bit to logic 0.
Figure 4 shows the activation sequence. When the card is
inactive, VCC, CLK, RST and I/O are LOW, with
low-impedance with respect to ground. The DC-to-DC
converter is stopped. SIMI/O is pulled HIGH at VDDI via the
20 kΩ pull-up resistor. When all conditions are met (supply
voltage, card present, no hardware problems), the
microcontroller may initiate an activation sequence by
setting the START bit to logic 1 (t0) via the I2C-bus:
If a start bit is detected during the first 200 CLK pulses of
each count slot, then it will not be taken into account. If a
start bit is detected during 200 and 352 CLK pulses of
each slot, then bit EARLY is set in the status register. The
microcontroller may initiate a deactivation sequence by
setting the START bit to logic 0.
1. The DC-to-DC converter is started (t1).
2. VCC starts rising from 0 to 3 V or 0 to 5 V, according to
the state of the 3 V/5 VN control bit, with a controlled
rise time of 0.17 V/µs typically (t2).
The sequencer is clocked by 1⁄64fosc which leads to a time
interval T of 25 µs typically. Thus t1 = 0 to 1⁄2 T;
t2 = t1 + 3⁄2 T; t3 = t1 + 7⁄2 T; t4 = t1 + 4 T and t5 depends on
the SIMCLK frequency.
3. I/O buffer is enabled in reception mode (t3).
4. CLK is sent to the card reader with RST = LOW, and
the count of 41928 CLK pulses is started (t4 = tact).
5. If a start bit is detected on I/O, the clock counter is
stopped with RST = LOW. If not, RST = HIGH, and a
new count of 41928 CLK pulses is started (t5).
START
V
CC
I/O
CLK
RST
SIMI/O
MGR437
t , t
t
t
t
(= t
)
act
t
Answer To Reset (ATR) begin
0
1
2
3
4
5
the 200 first CLK pulses are masked
Fig.4 Activation sequence.
2003 Feb 19
11
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
8.7.2
DEACTIVATION SEQUENCE
Figure 5 shows the deactivation sequence. When the session is completed, the microcontroller sets the START bit to
logic 0. The circuit will then execute an automatic deactivation sequence:
1. Card reset, RST goes LOW (t10).
2. CLK is stopped (t11).
3. I/O goes LOW (t12).
4. VCC falls to 0 V with typically 0.17 V/µs slew rate (t13). The deactivation is completed when VCC reaches 0.4 V (tde).
5. The DC-to-DC converter is stopped and CLK, RST, VCC and I/O become low-impedance with respect to PGND (t14).
t10 < 1⁄64 T; t11 = t10 + 1⁄2 T; t12 = t10 + T; t13 = t12 + 5 µs and t14 = t10 + 4 T.
START
RST
CLK
I/O
V
CC
MGR438
t
t
t
t
t
14
10
11
13
de
t
12
Fig.5 Deactivation sequence.
2003 Feb 19
12
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
8.8
Protection
Two hardware fault conditions are monitored by the circuit:
• Short-circuits between VCC and other contacts
• Supply drop-out.
When one of these problems is detected during a card session, the security logic block initiates an automatic deactivation
of the contacts (see Fig.6).
START
status readout
SIMERR
(internal signal)
RST
CLK
I/O
V
CC
MGR439
Fig.6 Emergency deactivation.
8.9
I/O circuitry
The Idle state is realized by both I/O and SIMI/O being pulled HIGH (via a 10 kΩ pull-up resistor from I/O to VCC and via
a 20 kΩ pull-up resistor from SIMI/O to VDDI).
I/O is referenced to VCC and SIMI/O to VDDI, thus allowing operation with VCC ≠ VDD ≠ VDDI
.
When configuration bit I/OEN is logic 0, then I/O and SIMI/O are independent.
When bit I/OEN is logic 1, then the data transmission between I/O and SIMI/O is enabled.
The first side on which a falling edge occurs becomes the master. An anti-latch circuit disables the detection of falling
edges on the other side, which becomes a slave.
After a delay time (td) of <500 ns on the falling edge, the N transistor on the slave side is turned on, thus transmitting the
logic 0 present on the master side.
When the master goes back to logic 1, the P transistor on the slave side is turned on during td, and then both sides return
to their Idle states.
The maximum frequency on these lines is 1 MHz.
2003 Feb 19
13
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
power supply voltage
CONDITIONS
MIN.
−0.5
MAX.
+6.5
UNIT
VDDP
VDDS
VDDI
Vi(n)
V
V
V
signal supply voltage
interface signal supply voltage
input voltage
−0.5
−0.5
+6.5
+6.5
pins 1, 2 and 17
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−
+6.5
V
pin 16
VDDS + 0.5 V
pins 19 and 20
+6.5
V
V
V
V
pins 10, 12 and 14
pin 13
VCC + 0.5
+6.5
+7.5
pin 9
pins 3, 5, 7 and 8
VVUP + 0.5 V
Ptot
continuous total power dissipation
operating junction temperature
IC storage temperature
electrostatic discharge voltage
on pins 10, 12, 13 and 14
on any other pin
Tamb = −40 to +85 °C
230
mW
Tj
−
125
°C
°C
Tstg
Vesd(n)
−55
+150
−6
−2
+6
+2
kV
kV
10 HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handle Metal Oxide Semiconductor (MOS) devices.
11 THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient in free air
35
K/W
2003 Feb 19
14
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
12 CHARACTERISTICS
VDD = 3 V; VDDI = 1.5 V; fSIMCLK = 13 MHz; fCLK = 3.25 MHz; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
VDD
supply voltage on pins VDDS
and VDDP
2.5
−
6.0
V
IDD
supply current on pins VDDS
and VDDP
Off mode
−
−
−
−
−
−
5
µA
µA
µA
inactive mode
50
500
Power-down mode; VCC = 5 V;
ICC = 100 µA; SIMCLK connected
to SGND or VDDI; CLK is stopped
active mode; VCC = 3 V; ICC = 6 mA
active mode; VCC = 5 V;
−
−
−
−
18
50
mA
mA
ICC = 10 mA
active mode; VDD = 5 V; VCC = 3 V;
ICC = 6 mA
−
−
−
−
10
30
mA
mA
active mode; VDD = 5 V; VCC = 5 V;
ICC = 10 mA
VDDI
IDDI
interface signal supply voltage
1.5
−
−
6
3
V
interface signals supply
current
SIMCLK connected to PGND
or VDDI
−
µA
f
SIMCLK = 13 MHz; VDDI = 1.5 V
SIMCLK = 13 MHz; VDDI = 6 V
−
−
120
1.2
2.3
200
−
µA
mA
V
f
−
−
Vth(VDD)
threshold voltage on VDD
falling edge
2
−
Vhys(VDD) hysteresis voltage on VDD
40
−
−
mV
V
Vth(DEL)
VDEL
threshold voltage on pin DEL
voltage on pin DEL
1.38
−
−
VDD
−2.5
−
V
Ich(DEL)
Idch(DEL)
tW
charge current on pin DEL
−0.5
0.5
15
−1
−
µA
mA
ms
discharge current on pin DEL VDEL = VDD
alarm pulse width
CDEL = 10 nF
−
25
Pin SIMCLK
fi(SIMCLK) clock input frequency
0
−
−
−
−
−
−
20
MHz
µs
tf
fall time
−
1
tr
rise time
−
1
µs
VIL
VIH
IL
LOW-level input voltage
HIGH-level input voltage
leakage current
0
0.3VDDI
V
0.7VDDI
VDDI + 0.3 V
−
±3
µA
DC-to-DC converter
1⁄2fosc
oscillator frequency
voltage on pin VUP
1
−
−
−
1.6
−
MHz
V
VVUP
5 V card
3 V card
6.0
4.5
−
V
2003 Feb 19
15
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pin SDA (open-drain)
VIL
VIH
ILH
IIL
LOW-level input voltage
−0.3
−
−
−
−
−
+0.3VDDI
V
HIGH-level input voltage
HIGH-level leakage current
LOW-level input current
LOW-level output voltage
0.7VDDI
6
V
−
−
−
1
µA
µA
V
depends on the pull-up resistor
IOL = 3 mA
−
VOL
0.3
Pin SCL (open-drain)
VIL
VIH
ILI
LOW-level input voltage
−0.3
0.7VDDI
−
−
−
−
+0.3VDDI
V
HIGH-level input voltage
input leakage current
6
1
V
µA
Pin PWROFF
VIL
VIH
ILI
LOW-level input voltage
0
−
−
−
0.3VDDI
V
HIGH-level input voltage
input leakage current
0.7VDDI
VDDI + 0.3 V
−
±1
µA
Pin RST
VO
IO
output voltage
inactive mode; IO = 1 mA
inactive mode; pin RST grounded
IOL = 200 µA
−0.3
−
−
−
−
−
−
−
+0.3
−1
V
output current
mA
V
VOL
VOH
tf
LOW-level output voltage
HIGH-level output voltage
fall time
−0.2
+0.3
VCC + 0.2
0.5
IOH < −200 µA
V
−
−
CC − 0.5
V
CL = 30 pF
µs
µs
tr
rise time
CL = 30 pF
0.5
Pin CLK
VO
IO
output voltage
inactive mode; IO = 1 mA
inactive mode; pin CLK grounded
IOL = 200 µA
−0.3
−
−
−
−
−
−
−
−
−
−
+0.3
V
output current
−1
mA
V
VOL
VOH
tf
LOW-level output voltage
HIGH-level output voltage
fall time
−0.2
+0.3
IOH = −200 µA
VCC − 0.5
VCC + 0.2
V
CL = 30 pF
−
8
ns
tr
rise time
CL = 30 pF
−
8
ns
fclk
clock frequency
1 MHz power-down configuration
regular activity
1
1.6
10
55
MHz
MHz
%
0
δ
duty factor
CL = 30 pF
45
Pin VCC (with 200 nF capacitor)
VO
output voltage
inactive mode; IO = 1 mA
−
−
0.3
V
V
V
V
V
active mode; 5 V card; no load
active mode; 3 V card; no load
4.85
2.8
5.10 5.40
3.05 3.25
5 V card; PDOWN = 1; ICC < 5 mA 4.6
3 V card; PDOWN = 1; ICC < 5 mA 2.75
−
−
5.4
3.25
2003 Feb 19
16
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
SYMBOL
PARAMETER
output voltage
CONDITIONS
active mode;
MIN.
TYP.
MAX.
UNIT
VO
5 V card; with static load
3 V card; with static load
4.60
−
−
−
−
−
−
−
−
−
5.40
V
2.75
4.60
2.75
−
3.25
5.40
3.25
−
V
5 V card; 40 nAs pulses; note 1
3 V card; 12 nAs pulses; note 2
inactive mode; pin VCC grounded
VCC = 5V; VDD < 3.7 V
V
V
IO
output current
mA
mA
mA
mA
mA
V/µs
−
15
V
CC = 5V; VDD > 3.7 V
CC = 3 V; VDD < 3.7 V
−
20
V
−
10
VCC = 3 V; VDD > 3.7 V
slew rate on VCC (rise and fall) CL(max) = 300 nF
−
15
SR
0.05
0.17 0.25
Pin I/O (internal pull-up resistor to VCC
)
VO
output voltage
inactive mode; IO = 1 mA
inactive mode; pin I/O grounded
IOL = 1 mA
−
−
−
−
−
−
−
−
0.3
V
IO
output current
−
−1
mA
V
VOL
VOH
VIL
VIH
ILIH
LOW-level output voltage
HIGH-level output voltage
LOW-level input voltage
HIGH-level input voltage
−0.2
0.8VCC
−0.3
1.5
−
+0.3
+25 µA< IOH < −25 µA
VCC + 0.2
+0.8
V
V
VCC + 0.3
10
V
HIGH-level input leakage
current
µA
IIL
LOW-level input current
data input transition time
data output transition time
delay time on falling edge
−
−
−
−
−
−
−600
1.2
µA
µs
µs
ns
kΩ
tt(DI)
tt(DO)
td
CL = 30 pF
CL = 30 pF
−
−
0.5
−
500
20
Rpu(int)
internal pull-up resistance
between pins I/O and VCC
13
Pin SIMI/O (internal pull-up resistor to VDDI
)
VOL
VOH
LOW-level output voltage
HIGH-level output voltage
IOL = 1 mA
−0.2
−
+0.3
V
with internal 20 kΩ pull-up resistor
to VDDI; IO = 10 µA
V
DDI − 0.3 −
VDDI + 0.2 V
VIL
VIH
ILIH
LOW-level input voltage
HIGH-level input voltage
−0.3
0.7VDDI
−
−
−
−
+0.3VDDI
V
VDDI + 0.3 V
HIGH-level input leakage
current
10
µA
IIL
LOW-level input current
with internal 20 kΩ pull-up resistor
to VDDI; VI = 0 V
−
−
µA
–VDDI
----------------
20 kΩ
tt(DI)
tt(DO)
td
data input transition time
data output transition time
delay time on falling edge
CL = 30 pF
CL = 30 pF
−
−
−
−
−
−
1.2
0.5
500
µs
µs
ns
2003 Feb 19
17
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
26
UNIT
Rpu(int)
internal pull-up resistance
between pins SIMI/O
and VDDI
16
−
kΩ
Timing
tact
tde
activation time
−
−
−
−
150
120
µs
µs
deactivation time
Notes
1. Current pulses applied on VCC (5 V card):
a) Continuous spikes; 20 mA amplitude; IDC = 0; 100 ns duration; pause 100 ns (2 nAs; lav = 10 mA; f = 5 MHz).
b) Continuous spikes; 20 mA amplitude; IDC = 0; 400 ns duration; pause 400 ns (8 nAs; lav = 10 mA; f = 1.25 MHz).
c) Continuous spikes; 15 mA amplitude; IDC = 5 mA; 150 ns duration; pause 300 ns (2.25 nAs; lav = 10 mA;
f = 2.22 MHz).
d) Random spikes; 200 mA amplitude; IDC = 5 mA; 200 ns duration; pause between 0.1 and 500 ms (40 nAs) (see
Fig.7).
e) Random spikes; 100 mA amplitude; IDC = 0; 400 ns duration; pause between 0.1 and 500 ms (40 nAs).
f) Random spikes; 195 mA amplitude; IDC = 5 mA; 200 ns duration; pause between 0.1 and 500 ms (39 nAs).
2. Current pulses applied on VCC (3 V card):
a) Continuous spikes; 12 mA amplitude; IDC = 0; 100 ns duration; pause 100 ns (1.2 nAs; lav = 6 mA; f = 5 MHz).
b) Continuous spikes; 12 mA amplitude; IDC = 0; 400 ns duration; pause 400 ns (4.8 nAs; lav = 6 mA; f = 1.25 MHz).
c) Continuous spikes; 9 mA amplitude; IDC = 3 mA; 150 ns duration; pause 300 ns (2.25 nAs; lav = 6 mA;
f = 2.22 MHz).
d) Random spikes; 60 mA amplitude; IDC = 5 mA; 200 ns duration; pause between 0.1 and 500 ms (12 nAs).
e) Random spikes; 30 mA amplitude; IDC = 0; 400 ns duration; pause between 0.1 and 500 ms (12 nAs).
f) Random spikes; 57 mA amplitude; IDC = 3 mA; 200 ns duration; pause between 0.1 and 500 ms (11.4 nAs).
MGU808
current
200 mA
(mA)
time (ns)
200 ns
Fig.7 Example of 200 mA and 200 ns current pulse.
2003 Feb 19
18
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
13 APPLICATION INFORMATION
VBAT
2.7
kΩ
2.7
kΩ
10 nF
SYSTEM
CONTROLLER
20 19 18 17 16
V
SIMCLK
PWROFF
S1
DDS
1
2
3
4
5
VBAT
(3)
15
100 nF
100 nF
RST
14
13
12
11
(5)
V
CC
C1
C5
C6
C7
OM5926HN
(2)
(4)
CLK
SGND
PGND
S3
(3)
(3)
C2
C3
6
7
8
9
10
(3)
(1)
(1)
100 nF
MGU809
(1)
100 nF
100 nF
22 µF
100 nF
VBAT
(1) Capacitors on the DC-to-DC converter must have ESR less
than 100 mΩ and must be placed close to the chip (some mm).
(2) Capacitor on VCC must have ESR less than 100 mΩ.
(3) Tracks from the chip to the smart card connector must be as
short as possible. If VCC track exceeds 2 cm, then 2 capacitors
have to be used: one near the chip, the second near the contact.
(4) CLK signal has to be routed far from I/O and RST.
(5) C5 must be electrically linked to chips GND without ground loop.
Fig.8 Application information.
19
2003 Feb 19
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
14 PACKAGE OUTLINE
HVQFN20: plastic thermal enhanced very thin quad flat package; no leads;
20 terminals; body 5 x 5 x 0.85 mm
SOT662-1
B
A
D
terminal 1
index area
A
A
1
E
c
detail X
C
e
1
y
y
e
b
v
M
M
C
C
A B
C
1
w
6
10
L
11
5
e
e
E
h
2
1
15
terminal 1
index area
20
16
X
D
h
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
(1)
A
max.
(1)
(1)
UNIT
A
b
c
E
e
e
e
2
y
D
D
E
L
v
w
y
1
1
h
1
h
0.05 0.38
0.00 0.23
5.1
4.9
3.25 5.1
2.95 4.9
3.25
2.95
0.75
0.50
mm
0.05
0.1
1
0.2
0.65
2.6
2.6
0.1
0.05
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
01-08-08
02-10-22
SOT662-1
- - -
MO-220
- - -
2003 Feb 19
20
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
15 SOLDERING
To overcome these problems the double-wave soldering
method was specifically developed.
15.1 Introduction to soldering surface mount
packages
If wave soldering is used the following conditions must be
observed for optimal results:
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
• For packages with leads on two sides and a pitch (e):
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
15.2 Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
The footprint must incorporate solder thieves at the
downstream end.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferably be kept:
Typical dwell time is 4 seconds at 250 °C.
• below 220 °C for all the BGA packages and packages
with a thickness ≥ 2.5mm and packages with a
thickness <2.5 mm and a volume ≥350 mm3 so called
thick/large packages
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
15.4 Manual soldering
• below 235 °C for packages with a thickness <2.5 mm
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
and a volume <350 mm3 so called small/thin packages.
15.3 Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2003 Feb 19
21
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
15.5 Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE(1)
WAVE
not suitable
REFLOW(2)
BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA
suitable
DHVQFN, HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP,
HTSSOP, HVQFN, HVSON, SMS
not suitable(3)
suitable
PLCC(4), SO, SOJ
suitable
suitable
LQFP, QFP, TQFP
not recommended(4)(5) suitable
not recommended(6)
suitable
SSOP, TSSOP, VSO, VSSOP
Notes
1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than
0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2003 Feb 19
22
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
16 DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
17 DEFINITIONS
18 DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Feb 19
23
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
19 PURCHASE OF PHILIPS I2C COMPONENTS
Purchase of Philips I2C components conveys a license under the Philips’ I2C patent to use the
components in the I2C system provided the system conforms to the I2C specification defined by
Philips. This specification can be ordered using the code 9398 393 40011.
2003 Feb 19
24
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
NOTES
2003 Feb 19
25
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
NOTES
2003 Feb 19
26
Philips Semiconductors
Product specification
I2C-bus SIM card interface
OM5926HN
NOTES
2003 Feb 19
27
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613502/01/pp28
Date of release: 2003 Feb 19
Document order number: 9397 750 10124
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INFINEON
OM6002STV
Power Field-Effect Transistor, 9A I(D), 200V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN
INFINEON
OM6003ST
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN
INFINEON
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