OM5N100SA [ETC]
1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package ; 1000V单N沟道高可靠性MOSFET采用TO - 254AA封装\n
| 型号： | OM5N100SA |
| 厂家： | 
ETC |
| 描述： | 1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
|
| 文件： | 总4页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM1N100SA OM5N100SA OM1N100ST
OM3N100SA OM6N100SA OM3N100ST
POWER MOSFET IN HERMETIC ISOLATED
JEDEC PACKAGE
1000V, Up To 6 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low RDS(on)
• Available Screened To MIL-19500, TX, TXV And S
• Ceramic Feedthroughs Also Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
OM1N100SA
OM3N100SA
OM5N100SA
OM6N100SA
OM3N100ST
OM1N100ST
RDS(on)
8.0
ID
1.0A
3.5A
5.0A
6.0A
3.5A
1.0A
5.2
3.1
3.0
2.0
5.4
8.2
SCHEMATIC
PIN CONNECTION
TO-254AA
TO-257AA
DRAIN
GATE
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
1
2 3
1
2 3
SOURCE
4 11 R1
Supersedes 2 05 R0
3.1 - 15
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM1N100SA (See Note 3)
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM3N100SA (See Note 3)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
1000
V
VGS = 0,
BVDSS Drain-Source Breakdown
Voltage
1000
V
VGS = 0,
ID = 250 mA
ID = 250 mA
VGS(th) Gate-Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 250 mA
VGS(th) Gate-Threshold Voltage
2.0
4.0
V
VDS = VGS ID = 250 mA
,
IGSSF
IGSSR
IDSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage
100 nA VGS = 20 V, VDS = 0
-100 nA VGS = - 20 V, VDS = 0
0.25 mA VDS = Max. Rat., VGS = 0
IGSSF
IGSSR
IDSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
100 nA VGS = 20 V
- 100 nA VGS = - 20 V
0.25 mA VDS = Max. Rat., VGS = 0
1.0 mA VDS = 0.8 x Max. Rat.,
VGS = 0, TC = 125° C
Drain Current
1.0 mA
VDS = 0.8 x Max. Rat.,
GS = 0, TC = 125° C
V
ID(on)
On-State Drain Current
1.0
A
VDS > ID(on) x RDS(on) Max.
GS = 10 V
ID(on)
On-State Drain Current
3.5
A
VDS > ID(on) x RDS(on) Max
VGS = 10 V
V
RDS(on) Static Drain-Source On-State
Resisitance1, 3
SA 8.0
VGS = 10 V
RDS(on) Static Drain-Source On-State
Resistance1, 3
SA
ST
5.2
5.4
VGS = 10 V
ST 8.2
SA 15.0
ST 15.4
ID =.5A
ID =.5A
RDS(on) Static Drain-Source On-State
Resistance1, 3
VGS = 10 V
RDS(on) Static Drain-Source On-State
Resistance1, 3
SA 10.0
ST 10.4
VGS = 10 V
ID =.5A, TC = 100° C
ID =.5A, TC = 100° C
DYNAMIC
DYNAMIC
gfs
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
1.0
S
VDS = 10V, ID = 1 A
gfs
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
1.0
S
VDS = 10, ID = 1.5 A
Ciss
Coss
Crss
Td(on)
tr
950
110
40
pF VGS = 0
pF VDS = 25 V
pF f = 1 MHz
ns
Ciss
Coss
Crss
Td(on)
tr
950
110
40
pF VGS = 0
pF VDS = 25 V
pF f = 1 MHz
ns
90
90
90
ns
90
ns
V
= 600 V, I = 3.5
D
VDD = 600 V, ID = 3.5
= 50W,V = 10 V
DD
= 50W,V
Td(off)
tf
Turn-Off Delay Time
Fall Time
115
75
ns
ns
Td(off)
tf
Turn-Off Delay Time
Fall Time
115
75
ns
ns
R
= 10 V
GS
R
G
G
GS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
D
IS
Continuous Source Current
3.5
A
A
V
Modified MOSPOWER
IS
Continuous Source Current
3.5
A
A
V
Modified MOSPOWER
(Body Diode)
Source Current1
symbol showing
(Body Diode)
Source Current1
symbol showing
G
G
ISM
14
the integral P-N
ISM
14
the integral P-N
(Body Diode)
Diode Forward Voltage2
Junction rectifier.
(Body Diode)
Diode Forward Voltage2
Junction rectifier.
S
S
VSD
trr
2.5
TC = 25 C, IS = 3.5 A, VGS = 0
VSD
trr
2.5
TC = 25 C, IS = 3.5 A, VGS = 0
Reverse Recovery Time
900
ns IF = IS, VDD = 100 V
Reverse Recovery Time
900
ns IF = IS, VDD = 100 V
dlF/ds = 100 A/ms, TJ = 150 C
dlF/ds = 100 A/ms, TJ = 150 C
1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%.
2 Pulse Width limited by safe operating area.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%.
2 Pulse Width limited by safe operating area.
3 OM1N100ST - All characteristics the same except RDS(on)
3 OM3N100ST - All characteristics the same except RDS(on)
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM5N100SA (See Note 3)
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM6N100SA (See Note 3)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
1000
V
VGS = 0,
BVDSS Drain-Source Breakdown
Voltage
1000
V
VGS = 0,
ID = 250 mA
ID = 250 mA
VGS(th) Gate-Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 250 mA
VGS(th) Gate-Threshold Voltage
2.0
4.0
V
VDS = VGS ID = 250 mA
,
IGSSF
IGSSR
IDSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage
100 nA VGS = 20 V, VDS = 0
-100 nA VGS = - 20 V, VDS = 0
0.25 mA VDS = Max. Rat., VGS = 0
IGSSF
IGSSR
IDSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
100 nA VGS = 20 V, VDS = 0
- 100 nA VGS = - 20 V, VDS = 0
0.25 mA VDS = Max. Rat., VGS = 0
1.0 mA VDS = 0.8 x Max. Rat.,
VGS = 0, TC = 125° C
Drain Current
1.0 mA
VDS = 0.8 x Max. Rat.,
GS = 0, TC = 125° C
V
ID(on)
On-State Drain Current
5.0
A
VDS > ID(on) x RDS(on)Max.,
GS = 10 V
ID(on)
On-State Drain Current
6.0
A
VDS > ID(on) x RDS(on)Max.,
VGS = 10 V
V
RDS(on) Static Drain-Source On-State
Resisitance1
3.0
VGS = 10 V, ID = 2.5 A
RDS(on) Static Drain-Source On-State
Resistance1
2.0
4.0
VGS = 10 V, ID = 3.0 A
RDS(on) Static Drain-Source On-State
Resistance1
6.0
VGS = 10 V, ID = 2.5 A
TC = 100 C
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 3.0 A
TC = 100° C
DYNAMIC
DYNAMIC
gfs
Forward Transductance
Input Capacitance
4.0
S
VDS = 25 VDS(on), ID = 2.5 A
gfs
Forward Transductance
Input Capacitance
4.0
S
VDS = 25V, ID = 3.0 A
Ciss
Coss
Crss
Td(on)
tr
2600 pF VGS = 0
350 pF VDS = 25 V
150 pF f = 1 MHz
Ciss
Coss
Crss
Td(on)
tr
2600 pF VGS = 0
350 pF VDS = 25 V
150 pF f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
65
55
62
25
ns
ns
ns
ns
65
55
62
25
ns
ns
ns
ns
VDD = 800 V, ID =6A
= 7W,V = 10 V
VDD = 800 V, ID = 6A
R = 7W,V = 10 V
G
Tr(Voff) Off-Voltage Rise Time
tf Fall Time
Tr(Voff) Off-Voltage Rise Time
tf Fall Time
R
G
GS
GS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
D
IS
Continuous Source Current
6
A
A
V
Modified MOSPOWER
IS
Continuous Source Current
6
A
A
V
Modified MOSPOWER
(Body Diode)
Source Current2
symbol showing
(Body Diode)
Source Current2
symbol showing
G
G
ISM
24
2.5
the integral P-N
ISM
24
2.5
the integral P-N
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
S
S
VSD
trr
TC = 25 C, IS = 6 A, VGS = 0
VSD
trr
TC = 25 C, IS = 6 A, VGS = 0
Reverse Recovery Time
1100
ns IF = IS,VDD = 100 V
Reverse Recovery Time
1000
ns IF = IS,VDD = 100 V
dlF/ds = 100 A/ms
dlF/ds = 100 A/ms, TJ = 150 C
1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%.
2 Pulse Width limited by safe operating area.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%.
2 Pulse Width limited by safe operating area.
3. Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package
3. Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package
OM1N100SA/ST Series
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
OM1N100SA OM3N100SA OM5N100SA OM6N100SA Units
OM1N100ST OM3N100ST
IAR
Avalanche Current
(Repetitive or Non-Repetitive)
Tj = 25°C
3.5
2
3.5
2
6
6
A
A
Tj = 100°C
3.4
850
3.4
850
EAS
Single Pulse Avalanche Energy
130
130
mJ
Starting Tj = 25°C, ID = IAR
,
VDD = 25V
EAR
Repetitive Avalanche Energy
(Pulse width limited by TJ max, d< 1%)
Drain-Source Voltage
6
6
16
16
mJ
VDS
1000
1000
.50
1000
1000
3.5
1000
1000
5.0
1000
1000
6.0
V
V
VDGR
Drain-Source Voltage (RGS = 20k )
Continuous Drain Current
Continuous Drain Current
ID @ TC = 25°C
ID @ TC = 100°C
IDM
A
.30
2.0
3.1
3.7
A
1
Pulsed Drain Current
14
14
24
24
A
VGS
Gate-Source Voltage
±20
90
±20
90
±20
130
51
±20
130
51
V
PD @ TC = 25°C
PD @ TC =100°C
Junction-To-Case
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
32
32
W
.87
.87
2.10
.020
2.10
.020
W/°C
W/°C
Junction-To-Ambient Linear Derating Factor
.020
.020
TJ
Operating and
Tstg
Storage Temperature Range
(1/16" from case for 10secs.)
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
°C
Lead Temperature
300
300
300
300
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
THERMAL RESISTANCE
RthJC
Junction-To-Case Max.
1.15
1.15
.48
.48
°C/W
3.1
MECHANICAL OUTLINE
TO-257AA
TO-254AA
.545
.535
.200
.050
.040
.144 DIA.
.190
.420
.410
.045
.035
.800
.790
.665
.645
.685
.665
.150
.140
.550
.530
.537
.527
.430
.410
.038 MAX.
.005
.550
.510
.005
.750
.500
.045
.035
.150 TYP.
.260
.249
.150 TYP.
.120 TYP.
.100 TYP.
.035
.025
PACKAGE OPTIONS
FET
S
4
FET
G S
3
G
D
D
D
S
G
1
G
S
D
3
D
S
G
G
S
D
FET
FET
FET
1
FET 2
Z-TAB
6 PIN SIP
MOD PAK
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA
MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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