MHW8267AN [NXP]

40 MHz - 870 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, CASE 1302-01, 7 PIN;


型号：	MHW8267AN
厂家：	NXP
描述：	40 MHz - 870 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, CASE 1302-01, 7 PIN 高功率电源放大器射频微波功率放大器
文件：	总4页 (文件大小：86K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Document Number: MHW8267AN

Rev. 3, 5/2006

Freescale Semiconductor

Technical Data

Gallium Arsenide

CATV Amplifier Module

MHW8267AN

Features

• Specified for 79- and 112-Channel Loading

• Excellent Distortion Performance

• Higher Output Capability

• Built-in Input Diode Protection

• GaAs FET Transistor Technology

• Unconditionally Stable Under All Load Conditions

• Output Port Ring Wave Protection

Applications

870 MHz

27.6 dB GAIN

112-CHANNEL

GaAs CATV AMPLIFIER MODULE

• CATV Systems Operating in the 47 to 870 MHz Frequency Range

• Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk

Distribution Amplifiers for CATV Systems

• Driver Amplifier in Linear General Purpose Applications

Description

• 24 Vdc Supply, 47 to 870 MHz, CATV GaAs Forward Power Doubler

Amplifier Module

• Replaced MHW8267A. There are no form, fit or function changes with this

CASE 1302-01, STYLE 1

part replacement.

• RoHS Compliant

Table 1. Maximum Ratings

Rating

Symbol

Value

+70

Unit

dBmV

Vdc

°C

RF Voltage Input (Single Tone)

DC Supply Voltage

+26

Operating Case Temperature Range

Storage Temperature Range

-20 to +100

-40 to +100

stg

°C

Table 2. ESD Maximum Ratings

Rating

Input Value

Output Value

Unit

Surge Voltage per IEC 1000-4-5

200

Human Body Model per Mil. Std. 1686

Table 3. Electrical Characteristics (V = 24 Vdc, T = +45°C, 75 Ω system unless otherwise noted)

Characteristic

Symbol

Min

Typ

—

Max

Unit

MHz

Frequency Range

Power Gain

Slope

870

28.2

1.4

870 MHz

27.6

0.7

—

47-870 MHz

Gain Flatness (40-870 MHz, Peak-to-Valley)

—

0.7

Return Loss — Input

IRL

(Z = 75 Ohms)

47-500 MHz

501-750 MHz

751-870 MHz

—

MHW8267AN

RF Device Data

Freescale Semiconductor

Table 3. Electrical Characteristics (V = 24 Vdc, T = +45°C, 75 Ω system unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Return Loss — Output

ORL

(Z = 75 Ohms)

47-160 MHz

f > 160-700 MHz

f > 701-870 MHz

—

Composite Second Order

dBc

(V = +48 dBmV/ch., Worst Case)

112-Channel FLAT

79-Channel FLAT

CSO

—

-64

-68

-64

-69

-62

-66

-62

-67

out

112

(V = +48 dBmV/ch., Worst Case)

out

(V = +56 dBmV @ 870 MHz Equiv) 112-Channel, 12db Tilt

out

112

(V = +58 dBmV @ 870 MHz Equiv) 79-Channel, 12db Tilt

out

Cross Modulation Distortion @ Ch 2

(V = +48 dBmV/ch., FM = 55 MHz) 112-Channel FLAT

XMD

—

-57

-59

-52

-55

-57

-50

-52

out

112

(V = +48 dBmV/ch., FM = 55 MHz) 79-Channel FLAT

out

(V = +56 dBmV @ 870 MHz Equiv) 112-Channel, 12db Tilt

out

112

(V = +58 dBmV @ 870 MHz Equiv) 79-Channel, 12db Tilt

out

Composite Triple Beat

(V = +48 dBmV/ch., Worst Case)

112-Channel FLAT

79-Channel FLAT

CTB

—

-59

–66

-57

-62

-57

-64

-55

-60

out

112

(V = +48 dBmV/ch., Worst Case)

out

(V = +56 dBmV @ 870 MHz Equiv) 112-Channel, 12db Tilt

out

112

(V = +58 dBmV @ 870 MHz Equiv) 79-Channel, 12db Tilt

out

Noise Figure

50 MHz

—

5.5

5.8

6.0

—

550 MHz

750 MHz

870 MHz

DC Current (V = 24 V, T = 45°C)

410

440

460

MHW8267AN

RF Device Data

Freescale Semiconductor

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONS ARE IN INCHES.

2. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M, 1994.

0.010

T F

INCHES

DIM MIN MAX

MILLIMETERS

MIN MAX

−−− 1.775

−−− 1.085

−−− 0.840

−−− 45.085

−−− 27.559

−−− 21.336

0.015

0.021

0.510 11.811 12.954

0.325 7.62 8.255

2.540 BSC

3.962 BSC

8.001 9.017

0.381

0.533

0.465

0.300

0.100 BSC

0.156 BSC

0.315 0.355

1.000 BSC

0.165 BSC

0.100 BSC

25.400 BSC

4.191 BSC

2.540 BSC

2X 6−32UNC−2B

0.010

Z T A

2X U

0.148

0.168

3.759

4.267

−−− 0.600

1.500 BSC

−−− 15.24

38.100 BSC

5.080 BSC

0.200 BSC

−−− 0.250

−−− 6.350

7 8 9

0.435

−−− 11.049

10.160 BSC

−−−

0.400 BSC

0.152

0.009

0.163

0.011

3.861

0.229

4.140

0.279

STYLE 1:

PIN 1. RF INPUT

2. GROUND

3. GROUND

4. DELETED

5. VDC

6. DELETED

7. GROUND

8. GROUND

9. RF OUTPUT

0.020

T A

0.010

Z T A

CASE 1302-01

ISSUE E

MHW8267AN

RF Device Data

Freescale Semiconductor

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MHW8267AN

RF Device Data

Freescale Semiconductor

Document Number: MHW8267AN

4^{Rev. 3, 5/2006}

MHW8267AN [NXP]

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