MHW8342N [FREESCALE]

CATV Amplifier Module; CATV放大器模块儿
MHW8342N
型号: MHW8342N
厂家: Freescale    Freescale
描述:

CATV Amplifier Module
CATV放大器模块儿

放大器 有线电视 射频 微波 高功率电源
文件: 总4页 (文件大小:73K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Document Number: MHW8342N  
Rev. 3, 5/2006  
Freescale Semiconductor  
Technical Data  
CATV Amplifier Module  
Features  
MHW8342N  
Specified for up to 132-Channel Loading  
Excellent Distortion Performance  
Superior Gain, Return Loss and DC Current Stability over Temperature  
Silicon Bipolar Transistor Technology  
Unconditionally Stable Under All Load Conditions  
870 MHz  
35.5 dB GAIN  
132-CHANNEL  
Applications  
CATV AMPLIFIER MODULE  
CATV Systems Operating in the 40 to 870 MHz Frequency Range  
Single Module High Gain Line Amplifier in Cable TV Distribution System  
Description  
24 Vdc Supply, 40 to 870 MHz, CATV High Gain Forward Amplifier Module  
Replaced MHW8342. There are no form, fit or function changes with this  
part replacement.  
RoHS Compliant  
CASE 1302-01, STYLE 1  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
+55  
Unit  
dBmV  
Vdc  
°C  
RF Voltage Input (Single Tone)  
DC Supply Voltage  
V
in  
V
CC  
+28  
Operating Case Temperature Range  
Storage Temperature Range  
T
C
- 20 to +100  
- 40 to +100  
T
stg  
°C  
Table 2. Electrical Characteristics (V = 24 Vdc, T = +30°C, 75 system unless otherwise noted)  
CC  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
MHz  
dB  
Frequency Range  
Power Gain  
BW  
40  
870  
50 MHz  
870 MHz  
G
33.2  
34  
34  
35.5  
34.8  
37  
p
Slope  
40 - 870 MHz  
S
0.5  
1.5  
0.3  
2.75  
0.8  
dB  
dB  
dB  
Gain Flatness (Peak To Valley)  
Return Loss — Input  
G
F
IRL  
(Z = 75 Ohms)  
o
40-80 MHz  
22  
18  
16  
14  
28  
25  
22  
19  
80-320 MHz  
320-640 MHz  
640-870 MHz  
Return Loss — Output  
ORL  
dB  
(Z = 75 Ohms)  
o
40-80 MHz  
22  
19  
17  
15  
28  
25  
22  
22  
80-240 MHz  
240-640 MHz  
640-870 MHz  
Freescale Semiconductor, Inc., 2006. All rights reserved.  
Table 2. Electrical Characteristics (V = 24 Vdc, T = +30°C, 75 system unless otherwise noted) (continued)  
CC  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Composite Second Order  
(V = +44 dBmV/ch., Worst Case)  
dBc  
79-Channel FLAT  
112-Channel FLAT  
132-Channel FLAT  
CSO  
- 65  
- 55  
- 48  
- 60  
- 50  
- 44  
out  
79  
(V = +44 dBmV/ch., Worst Case)  
CSO  
CSO  
out  
112  
132  
(V = +44 dBmV/ch., Worst Case)  
out  
Cross Modulation Distortion  
dBc  
dBc  
(V = +44 dBmV, FM = 55.25 MHz)  
79-Channel FLAT  
112-Channel FLAT  
132-Channel FLAT  
XMD  
- 63  
- 56  
-56  
- 60  
-52  
-50  
out  
79  
(V = +44 dBmV, FM = 55.25 MHz)  
XMD  
XMD  
out  
112  
132  
(V = +44 dBmV, FM = 55.25 MHz)  
out  
Composite Triple Beat  
(V = +44 dBmV/ch., Worst Case)  
79-Channel FLAT  
112-Channel FLAT  
132-Channel FLAT  
CTB  
- 64  
- 54  
-50  
- 62  
- 51  
- 46  
out  
79  
(V = +44 dBmV/ch., Worst Case)  
CTB  
CTB  
out  
112  
132  
(V = +44 dBmV/ch., Worst Case)  
out  
Noise Figure  
DC Current  
50 MHz  
550 MHz  
870 MHz  
NF  
3.5  
4.5  
5.5  
4.5  
6.5  
dB  
I
310  
325  
350  
mA  
DC  
MHW8342N  
RF Device Data  
Freescale Semiconductor  
2
PACKAGE DIMENSIONS  
A
S
B
A
Z
NOTES:  
1. DIMENSIONS ARE IN INCHES.  
2. INTERPRET DIMENSIONS AND TOLERANCES  
PER ASME Y14.5M, 1994.  
2X  
Q
M
M
M
A
0.010  
T F  
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN MAX  
V
J
A
B
C
D
E
F
−−−  
−−−  
1.775  
1.085  
0.840  
0.021  
−−− 45.085  
−−− 27.559  
−−− 21.336  
F
F
R
−−−  
0.015  
0.465  
0.300  
0.381  
0.533  
0.510 11.811 12.954  
0.325 7.62 8.255  
G
J
0.100 BSC  
0.156 BSC  
0.315 0.355  
2.540 BSC  
3.962 BSC  
K
L
8.001  
9.017  
1.000 BSC  
0.165 BSC  
0.100 BSC  
25.400 BSC  
4.191 BSC  
2.540 BSC  
2X 6−32UNC−2B  
N
P
Q
R
S
U
V
W
X
Y
Z
L
M
M
0.010  
Z T A  
2X U  
0.148  
−−−  
0.168  
0.600  
3.759  
−−−  
4.267  
15.24  
1.500 BSC  
0.200 BSC  
38.100 BSC  
5.080 BSC  
E
−−−  
0.250  
−−−  
6.350  
1
2
3
5
7 8 9  
0.435  
−−− 11.049  
−−−  
C
0.400 BSC  
10.160 BSC  
N
K
E
0.152  
0.009  
0.163  
0.011  
3.861  
0.229  
4.140  
0.279  
W
Z
X
X
4X  
STYLE 1:  
P
PIN 1. RF INPUT  
2. GROUND  
3. GROUND  
4. DELETED  
5. VDC  
6. DELETED  
7. GROUND  
8. GROUND  
9. RF OUTPUT  
7X  
D
G
T
M
M
0.020  
T A  
X
2X  
Y
M
M
0.010  
Z T A  
CASE 1302-01  
ISSUE E  
MHW8342N  
RF Device Data  
Freescale Semiconductor  
3
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Document Number: MHW8342N  
Rev. 3, 5/2006  

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