BYR29F-700 [NXP]

Rectifier diodes ultrafast; 整流二极管超快
BYR29F-700
型号: BYR29F-700
厂家: NXP    NXP
描述:

Rectifier diodes ultrafast
整流二极管超快

整流二极管
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中文:  中文翻译
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Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast  
BYR29F series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• Reverse surge capability  
• High thermal cycling performance  
• Isolated mounting tab  
VR = 500 V/ 600 V/ 700 V /  
800 V  
k
1
a
2
VF 1.5 V  
IF(AV) = 8 A  
trr 75 ns  
GENERAL DESCRIPTION  
PINNING  
SOD100  
Ultra-fast, epitaxial rectifier diodes  
intended for use as output rectifiers  
in high frequency switched mode  
power supplies.  
PIN  
DESCRIPTION  
cathode  
anode  
isolated  
case  
1
2
The BYR29F series is supplied in  
the conventional leaded SOD100  
package.  
tab  
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
BYR29F  
MIN.  
MAX.  
UNIT  
-500  
500  
500  
500  
-600  
600  
600  
600  
-700  
700  
700  
700  
-800  
800  
800  
800  
VRRM  
VRWM  
VR  
Peak repetitive reverse voltage  
Crest working reverse voltage  
Continuous reverse voltage  
-
-
-
V
V
V
Ths 136 ˚C  
IF(AV)  
Average forward current1  
square wave;  
-
8
A
δ = 0.5;  
Ths 73 ˚C  
IFRM  
IFSM  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
-
16  
A
T
hs 73 ˚C  
Non-repetitive peak forward  
current  
t = 10 ms  
-
-
60  
66  
A
A
t = 8.3 ms  
sinusoidal; with  
reapplied VRRM(max)  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
1 Neglecting switching and reverse current losses  
September 1998  
1
Rev 1.400  
Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast  
BYR29F series  
ISOLATION LIMITING VALUE & CHARACTERISTIC  
Ths = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Visol  
Cisol  
Repetitive peak voltage from  
R.H. 65% ; clean and dustfree  
-
1500  
V
both terminals to external  
heatsink  
Capacitance from cathode to  
external heatsink  
f = 1 MHz  
-
12  
-
pF  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Thermal resistance junction to with heatsink compound  
-
-
-
-
-
55  
5.5  
7.2  
-
K/W  
K/W  
K/W  
heatsink  
without heatsink compound  
Rth j-a  
Thermal resistance junction to in free air.  
ambient  
ELECTRICAL CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VF  
Forward voltage  
IF = 8 A; Tj = 150˚C  
IF = 20 A  
-
-
-
-
-
1.07  
1.75  
1.0  
1.50  
1.95  
10  
V
V
µA  
mA  
nC  
IR  
Reverse current  
VR = VRRM  
VR = VRRM; Tj = 100 ˚C  
IF = 2 A to VR 30 V;  
dIF/dt = 20 A/µs  
IF = 1 A to VR 30 V;  
dIF/dt = 100 A/µs  
0.1  
0.2  
Qs  
trr  
Reverse recovery charge  
Reverse recovery time  
150  
200  
-
-
-
60  
-
75  
6
ns  
A
Irrm  
Vfr  
Peak reverse recovery current IF = 10 A to VR 30 V;  
dIF/dt = 50 A/µs; Tj = 100 ˚C  
Forward recovery voltage  
IF = 10 A; dIF/dt = 10 A/µs  
5.0  
-
V
September 1998  
2
Rev 1.400  
Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast  
BYR29F series  
Ths(max) / C  
PF / W  
Vo = 1.26 V  
15  
10  
5
dI  
I
F
73  
F
Rs = 0.03 Ohms  
a = 1.57  
dt  
84  
1.9  
2.2  
t
95  
rr  
2.8  
time  
106  
117  
128  
4
Q
100%  
10%  
s
139  
150  
I
I
R
rrm  
0
0
1
2
3
4
5
6
7
8
IF(AV) / A  
Fig.1. Definition of trr, Qs and Irrm  
Fig.4. Maximum forward dissipation PF = f(IF(AV));  
sinusoidal current waveform where a = form  
factor = IF(RMS) / IF(AV)  
.
IF(RMS) / A  
I
12  
10  
8
F
F
time  
6
V
4
V
2
fr  
V
F
0
10us  
100us  
1ms  
10ms  
100ms  
tp / s  
time  
Fig.2. Definition of Vfr  
Fig.5. Maximum permissible rms current IF(RMS) versus  
pulse width.  
Ths(max) / C  
trr / ns  
1000  
PF / W  
Vo = 1.26 V  
20  
15  
10  
5
40  
IF=10 A  
D = 1.0  
Rs = 0.03 Ohms  
67.5  
95  
0.5  
1A  
100  
0.2  
0.1  
10  
t
T
p
tp  
I
D =  
122.5  
150  
Tj = 25 C  
Tj = 100 C  
t
T
1
0
100  
1
10  
0
2
4
6
8
10  
12  
IF(AV) / A  
dIF/dt (A/us)  
Fig.3. Maximum forward dissipation PF = f(IF(AV));  
Fig.6. Maximum trr at Tj = 25˚C and 100˚C.  
square wave where IF(AV) =IF(RMS) x D.  
September 1998  
3
Rev 1.400  
Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast  
BYR29F series  
Qs / nC  
Irrm / A  
10  
1000  
100  
10  
IF=10A  
IF=1A  
IF = 10A  
2 A  
1
0.1  
Tj = 25 C  
Tj = 100 C  
0.01  
1
10  
100  
1.0  
10  
100  
-dIF/dt (A/us)  
-dIF/dt (A/us)  
Fig.7. Maximum Irrm at Tj = 25˚C and 100˚C.  
Fig.9. Maximum Qs at Tj = 25˚C  
Transient thermal impedance, Zth j-hs (K/W)  
IF / A  
10  
1
30  
25  
20  
15  
10  
5
Tj = 25 C  
Tj = 150 C  
0.1  
max  
typ  
p
t
T
p
t
P
0.01  
D
D =  
t
T
0.001  
1us  
0
10us 100us 1ms  
10ms 100ms  
1s  
10s  
0
0.5  
1
1.5  
VF / V  
2
2.5  
3
pulse width, tp (s)  
Fig.8. Typical and maximum forward characteristic  
IF = f(VF); parameter Tj  
Fig.10. Transient thermal impedance Zth = f(tp)  
September 1998  
4
Rev 1.400  
Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast  
BYR29F series  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 2 g  
10.2  
max  
5.7  
max  
3.2  
3.0  
4.4  
max  
0.9  
0.5  
2.9 max  
4.4  
4.0  
7.9  
7.5  
17  
max  
seating  
plane  
3.5 max  
4.4  
not tinned  
13.5  
min  
k
a
0.9  
0.7  
0.4  
M
0.55 max  
1.3  
5.08  
top view  
Fig.11. SOD100; The seating plane is electrically isolated from all terminals.  
Notes  
1. Refer to mounting instructions for F-pack envelopes.  
2. Epoxy meets UL94 V0 at 1/8".  
September 1998  
5
Rev 1.400  
Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast  
BYR29F series  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 1998  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
September 1998  
6
Rev 1.400  

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