BYR29FSERIES [NXP]
Rectifier diodes ultrafast ; 整流二极管超快\n型号: | BYR29FSERIES |
厂家: | NXP |
描述: | Rectifier diodes ultrafast
|
文件: | 总6页 (文件大小:48K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYR29F series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
VR = 500 V/ 600 V/ 700 V /
800 V
k
1
a
2
VF ≤ 1.5 V
IF(AV) = 8 A
trr ≤ 75 ns
GENERAL DESCRIPTION
PINNING
SOD100
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
PIN
DESCRIPTION
cathode
anode
isolated
case
1
2
The BYR29F series is supplied in
the conventional leaded SOD100
package.
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
BYR29F
MIN.
MAX.
UNIT
-500
500
500
500
-600
600
600
600
-700
700
700
700
-800
800
800
800
VRRM
VRWM
VR
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
-
-
-
V
V
V
Ths ≤ 136 ˚C
IF(AV)
Average forward current1
square wave;
-
8
A
δ = 0.5;
Ths ≤ 73 ˚C
IFRM
IFSM
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
16
A
T
hs ≤ 73 ˚C
Non-repetitive peak forward
current
t = 10 ms
-
-
60
66
A
A
t = 8.3 ms
sinusoidal; with
reapplied VRRM(max)
Tstg
Tj
Storage temperature
Operating junction temperature
-40
-
150
150
˚C
˚C
1 Neglecting switching and reverse current losses
September 1998
1
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYR29F series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
Repetitive peak voltage from
R.H. ≤ 65% ; clean and dustfree
-
1500
V
both terminals to external
heatsink
Capacitance from cathode to
external heatsink
f = 1 MHz
-
12
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Thermal resistance junction to with heatsink compound
-
-
-
-
-
55
5.5
7.2
-
K/W
K/W
K/W
heatsink
without heatsink compound
Rth j-a
Thermal resistance junction to in free air.
ambient
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 8 A; Tj = 150˚C
IF = 20 A
-
-
-
-
-
1.07
1.75
1.0
1.50
1.95
10
V
V
µA
mA
nC
IR
Reverse current
VR = VRRM
VR = VRRM; Tj = 100 ˚C
IF = 2 A to VR ≥ 30 V;
dIF/dt = 20 A/µs
IF = 1 A to VR ≥ 30 V;
dIF/dt = 100 A/µs
0.1
0.2
Qs
trr
Reverse recovery charge
Reverse recovery time
150
200
-
-
-
60
-
75
6
ns
A
Irrm
Vfr
Peak reverse recovery current IF = 10 A to VR ≥ 30 V;
dIF/dt = 50 A/µs; Tj = 100 ˚C
Forward recovery voltage
IF = 10 A; dIF/dt = 10 A/µs
5.0
-
V
September 1998
2
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYR29F series
Ths(max) / C
PF / W
Vo = 1.26 V
15
10
5
dI
I
F
73
F
Rs = 0.03 Ohms
a = 1.57
dt
84
1.9
2.2
t
95
rr
2.8
time
106
117
128
4
Q
100%
10%
s
139
150
I
I
R
rrm
0
0
1
2
3
4
5
6
7
8
IF(AV) / A
Fig.1. Definition of trr, Qs and Irrm
Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV)
.
IF(RMS) / A
I
12
10
8
F
F
time
6
V
4
V
2
fr
V
F
0
10us
100us
1ms
10ms
100ms
tp / s
time
Fig.2. Definition of Vfr
Fig.5. Maximum permissible rms current IF(RMS) versus
pulse width.
Ths(max) / C
trr / ns
1000
PF / W
Vo = 1.26 V
20
15
10
5
40
IF=10 A
D = 1.0
Rs = 0.03 Ohms
67.5
95
0.5
1A
100
0.2
0.1
10
t
T
p
tp
I
D =
122.5
150
Tj = 25 C
Tj = 100 C
t
T
1
0
100
1
10
0
2
4
6
8
10
12
IF(AV) / A
dIF/dt (A/us)
Fig.3. Maximum forward dissipation PF = f(IF(AV));
Fig.6. Maximum trr at Tj = 25˚C and 100˚C.
square wave where IF(AV) =IF(RMS) x √D.
September 1998
3
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYR29F series
Qs / nC
Irrm / A
10
1000
100
10
IF=10A
IF=1A
IF = 10A
2 A
1
0.1
Tj = 25 C
Tj = 100 C
0.01
1
10
100
1.0
10
100
-dIF/dt (A/us)
-dIF/dt (A/us)
Fig.7. Maximum Irrm at Tj = 25˚C and 100˚C.
Fig.9. Maximum Qs at Tj = 25˚C
Transient thermal impedance, Zth j-hs (K/W)
IF / A
10
1
30
25
20
15
10
5
Tj = 25 C
Tj = 150 C
0.1
max
typ
p
t
T
p
t
P
0.01
D
D =
t
T
0.001
1us
0
10us 100us 1ms
10ms 100ms
1s
10s
0
0.5
1
1.5
VF / V
2
2.5
3
pulse width, tp (s)
Fig.8. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.10. Transient thermal impedance Zth = f(tp)
September 1998
4
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYR29F series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.2
max
5.7
max
3.2
3.0
4.4
max
0.9
0.5
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
4.4
not tinned
13.5
min
k
a
0.9
0.7
0.4
M
0.55 max
1.3
5.08
top view
Fig.11. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
5
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYR29F series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
6
Rev 1.400
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