BYC8X-600P [NXP]

DIODE RECTIFIER DIODE, Rectifier Diode;
BYC8X-600P
型号: BYC8X-600P
厂家: NXP    NXP
描述:

DIODE RECTIFIER DIODE, Rectifier Diode

整流二极管 开关 局域网 超快速恢复二极管
文件: 总9页 (文件大小:143K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BYC8X-600  
Hyperfast rectifier diode, low switching loss  
Rev. 02 — 13 March 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Hyperfast epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package.  
1.2 Features and benefits  
„ Low reverse recovery current and low  
„ Reduces switching losses in  
thermal resistance  
associated MOSFET  
1.3 Applications  
„ Continuous Current Mode (CCM)  
„ Half-bridge/full-bridge switched-mode  
Power Factor Correction (PFC)  
power supplies  
„ Half-bridge lighting ballasts  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
VRRM  
IF(AV)  
repetitive peak  
reverse voltage  
-
-
600  
V
average forward  
current  
square-wave pulse; δ = 0.5;  
Th = 59 °C; see Figure 1;  
see Figure 2  
-
-
-
-
8
A
Dynamic characteristics  
trr  
reverse recovery  
time  
IF = 8 A; VR = 400 V;  
dIF/dt = 500 A/µs;  
Tj = 25 °C; see Figure 5  
19  
1.4  
-
ns  
V
Static characteristics  
VF forward voltage  
IF = 8 A; Tj = 150 °C; see  
Figure 4  
1.85  
BYC8X-600  
NXP Semiconductors  
Hyperfast rectifier diode, low switching loss  
2. Pinning information  
Table 2.  
Pinning information  
Pin  
1
Symbol Description  
Simplified outline  
Graphic symbol  
K
cathode  
mb  
K
A
2
A
anode  
001aaa020  
mb  
n.c.  
mounting base; isolated  
1
2
SOD113  
(TO-220F)  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
BYC8X-600  
TO-220F  
plastic single-ended package; isolated heatsink mounted; 1 mounting  
hole; 2-lead TO-220 "full pack"  
SOD113  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
VRRM  
repetitive peak reverse  
voltage  
-
600  
600  
8
V
V
A
A
VRWM  
IF(AV)  
IFRM  
crest working reverse  
voltage  
-
-
-
average forward  
current  
square-wave pulse; δ = 0.5; Th = 59 °C; see Figure  
1; see Figure 2  
repetitive peak forward square-wave pulse; δ = 0.5; tp = 25 µs; Th = 59 °C  
16  
current  
IFSM  
non-repetitive peak  
forward current  
tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C  
tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C  
-
80  
A
-
88  
A
Tstg  
Tj  
storage temperature  
junction temperature  
-40  
-
150  
150  
°C  
°C  
BYC8X-600_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 13 March 2009  
2 of 9  
BYC8X-600  
NXP Semiconductors  
Hyperfast rectifier diode, low switching loss  
003aab471  
a = 1.57  
003aab472  
20  
Ptot  
(W)  
30  
Ptot  
(W)  
δ =1  
25  
20  
15  
10  
5
1.9  
16  
2.2  
0.5  
2.8  
12  
4.0  
0.2  
0.1  
8
4
0
0
0
2
4
6
8
0
4
8
12  
IF(AV) (A)  
IF(AV) (A)  
Fig 1. Forward power dissipation as a function of  
average forward current; sinusoidal waveform;  
maximum values  
Fig 2. Forward power dissipation as a function of  
average forward current; square waveform;  
maximum values  
5. Thermal characteristics  
Table 5.  
Symbol  
Rth(j-h)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
thermal resistance from with heatsink compound; see Figure 3  
junction to heatsink  
-
-
4.8  
K/W  
Rth(j-a)  
thermal resistance from  
junction to ambient free  
air  
-
55  
-
K/W  
001aaf045  
10  
Z
th(j-h)  
(K/W)  
1
t
1  
2  
3  
p
10  
10  
10  
P
δ =  
T
t
t
p
T
6  
5  
4  
3  
2  
1  
10  
10  
10  
10  
10  
10  
1
10  
t
p
(s)  
Fig 3. Transient thermal impedance from junction to heatsink as a function of pulse width  
BYC8X-600_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 13 March 2009  
3 of 9  
BYC8X-600  
NXP Semiconductors  
Hyperfast rectifier diode, low switching loss  
6. Isolation characteristics  
Table 6.  
Symbol  
Visol(RMS)  
Isolation characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
RMS isolation voltage f = 1 MHz; RH = 65 %; between all pins  
and external heatsink  
-
-
2500  
V
Cisol  
isolation capacitance  
from cathode to external heatsink  
-
10  
-
pF  
7. Characteristics  
Table 7.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
VF forward voltage  
IF = 8 A; Tj = 150 °C; see Figure 4  
IF = 8 A; Tj = 25 °C  
-
-
-
-
-
1.4  
2
1.85  
2.9  
2.3  
3
V
V
IF = 16 A; Tj = 150 °C  
VR = 500 V; Tj = 100 °C  
VR = 600 V  
1.7  
1.1  
9
V
IR  
reverse current  
mA  
µA  
150  
Dynamic characteristics  
Qr  
trr  
recovered charge  
IF = 1 A; dIF/dt = 100 A/µs  
-
-
12  
32  
-
nC  
ns  
reverse recovery time  
IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;  
Tj = 100 °C  
40  
IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;  
Tj = 25 °C  
-
-
-
-
-
30  
19  
9.5  
1.5  
8
52  
-
ns  
ns  
A
IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;  
Tj = 25 °C; see Figure 5  
IRM  
peak reverse recovery IF = 10 A; VR = 400 V; dIF/dt = 500 A/µs;  
12  
5.5  
10  
current  
Tj = 100 °C  
IF = 8 A; VR = 400 V; dIF/dt = 50 A/µs;  
Tj = 125 °C  
A
VFR  
forward recovery  
voltage  
IF = 10 A; dIF/dt = 100 A/µs; Tj = 25 °C;  
see Figure 6  
V
BYC8X-600_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 13 March 2009  
4 of 9  
BYC8X-600  
NXP Semiconductors  
Hyperfast rectifier diode, low switching loss  
003aac976  
dl  
F
20  
IF  
I
F
dt  
(A)  
16  
12  
8
t
rr  
time  
25 %  
(1)  
(2)  
(3)  
100 %  
Q
r
4
0
I
I
RM  
R
003aac562  
0
1
2
3
4
V
F (V)  
Fig 5. Reverse recovery definitions; ramp recovery  
Fig 4. Forward current as a function of forward  
voltage  
I
F
time  
V
F
V
FRM  
V
F
time  
001aab912  
Fig 6. Forward recovery definitions  
BYC8X-600_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 13 March 2009  
5 of 9  
BYC8X-600  
NXP Semiconductors  
Hyperfast rectifier diode, low switching loss  
8. Package outline  
Plastic single-ended package; isolated heatsink mounted;  
1 mounting hole; 2-lead TO-220 'full pack'  
SOD113  
A
A
1
E
P
z
q
m
T
D
H
E
L
2
j
(1)  
L
1
k
Q
L
1
2
b
1
b
M
w
c
e
(2)  
z
0
10  
20 mm  
scale  
0.8  
DIMENSIONS (mm are the original dimensions)  
H
max  
L
2
max  
E
(1)  
UNIT  
mm  
A
A
b
b
c
D
E
e
j
k
L
L
1
m
P
Q
q
T
w
1
1
4.6  
4.0  
2.9  
2.5  
0.9  
0.7  
1.1  
0.9  
0.7 15.8 10.3  
0.4 15.2 9.7  
2.7  
1.7  
0.6 14.4 3.3  
0.4 2.8  
6.5  
6.3  
3.2  
3.0  
2.6  
2.3  
5.08 19.0  
0.5  
2.6 2.55 0.4  
13.5  
Notes  
1. Terminals are uncontrolled within zone L .  
1
2. z is depth of T.  
REFERENCES  
JEDEC JEITA  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
02-04-09  
07-06-18  
SOD113  
2-lead TO-220F  
Fig 7. Package outline SOD113 (TO-220F)  
BYC8X-600_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 13 March 2009  
6 of 9  
BYC8X-600  
NXP Semiconductors  
Hyperfast rectifier diode, low switching loss  
9. Revision history  
Table 8.  
Revision history  
Document ID  
BYC8X-600_2  
Modifications:  
Release date  
Data sheet status  
Change notice  
Supersedes  
20090313  
Product data sheet  
-
BYC8X-600_1  
Forward voltage values updated in characteristics.  
Recovered charge parameter added in characteristics.  
BYC8X-600_1  
20070905  
Product data sheet  
-
-
BYC8X-600_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 13 March 2009  
7 of 9  
BYC8X-600  
NXP Semiconductors  
Hyperfast rectifier diode, low switching loss  
10. Legal information  
10.1 Data sheet status  
Document status [1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term 'short data sheet' is explained in section "Definitions".  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product  
status information is available on the Internet at URL http://www.nxp.com.  
Applications — Applications that are described herein for any of these  
10.2 Definitions  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
10.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Export control — This document as well as the item(s) described herein may  
be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
10.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
11. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BYC8X-600_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 13 March 2009  
8 of 9  
BYC8X-600  
NXP Semiconductors  
Hyperfast rectifier diode, low switching loss  
12. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . .1  
Features and benefits. . . . . . . . . . . . . . . . . . . . .1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Quick reference data . . . . . . . . . . . . . . . . . . . . .1  
2
3
4
5
6
7
8
9
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2  
Ordering information. . . . . . . . . . . . . . . . . . . . . .2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2  
Thermal characteristics . . . . . . . . . . . . . . . . . . .3  
Isolation characteristics . . . . . . . . . . . . . . . . . . .4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .4  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .6  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .7  
10  
Legal information. . . . . . . . . . . . . . . . . . . . . . . . .8  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .8  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .8  
10.1  
10.2  
10.3  
10.4  
11  
Contact information. . . . . . . . . . . . . . . . . . . . . . .8  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 13 March 2009  
Document identifier: BYC8X-600_2  

相关型号:

BYC8X-600P,127

BYC8X-600P
NXP

BYD11

Controlled avalanche rectifiers
NXP

BYD1100

Hyper fast soft-recovery rectifier
NXP

BYD1100,115

DIODE 0.85 A, 100 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
NXP

BYD1100A

Rectifier Diode,
EIC

BYD11D

Controlled avalanche rectifiers
NXP

BYD11D113

DIODE 0.37 A, 200 V, SILICON, SIGNAL DIODE, Signal Diode
NXP

BYD11D133

DIODE 0.37 A, 200 V, SILICON, SIGNAL DIODE, Signal Diode
NXP

BYD11D143

DIODE 0.37 A, 200 V, SILICON, SIGNAL DIODE, Signal Diode
NXP

BYD11DT/R

DIODE 0.5 A, SILICON, SIGNAL DIODE, Signal Diode
PHILIPS

BYD11G

Controlled avalanche rectifiers
NXP

BYD11G113

DIODE 0.37 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode
NXP