BY459F-1500 [NXP]

Rectifier diode fast, high-voltage; 整流二极管快,高电压
BY459F-1500
型号: BY459F-1500
厂家: NXP    NXP
描述:

Rectifier diode fast, high-voltage
整流二极管快,高电压

整流二极管 高压 局域网 高压快速恢复二极管
文件: 总6页 (文件大小:36K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Philips Semiconductors  
Product specification  
Rectifier diode  
fast, high-voltage  
BY459F-1500  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass-passivated double diffused  
rectifier diode in a full pack plastic  
envelope, featuring fast forward  
recovery and low forward recovery  
voltage. The device is intended for  
use in multi-sync monitor horizontal  
deflection circuits.  
SYMBOL  
PARAMETER  
MAX. UNIT  
VRRM  
VF  
Repetitive peak reverse voltage  
Forward voltage  
1500  
1.2  
10  
100  
250  
14  
V
V
IFWM  
IFRM  
tfr  
Working peak forward current  
Repetitive peak forward current  
Forward recovery time  
A
A
ns  
V
Vfr  
Forward recovery voltage  
PINNING - SOD100  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
cathode  
anode  
case  
k
1
a
2
2
case isolated  
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
VRSM  
Non-repetitive peak reverse  
-
1500  
V
voltage during flash-over of  
picture tube  
VRRM  
VRWM  
IFWM  
IFRM  
Repetitive peak reverse voltage t = 6 µs; f = 82kHz  
Crest working reverse voltage  
-
-
-
-
-
-
1500  
1300  
10  
100  
100  
110  
V
V
A
A
A
A
Working peak forward current1 f = 82kHz; Ths 127 ˚C  
Repetitive peak forward current t = 100 µs  
IFSM  
Non-repetitive peak forward  
current  
t = 10 ms  
t = 8.3 ms  
sinusoidal; Tj = 150 ˚C prior to  
surge; with reapplied VRWM(max)  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
ISOLATION LIMITING VALUE & CHARACTERISTIC  
Ths = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Visol  
Cisol  
Repetitive peak voltage from  
R.H. 65% ; clean and dustfree  
-
1500  
V
both terminals to external  
heatsink  
Capacitance from cathode to  
external heatsink  
f = 1 MHz  
-
12  
-
pF  
1 Including worst case forward recovery losses, see fig:5.  
August 1996  
1
Rev 1.200  
Philips Semiconductors  
Product specification  
Rectifier diode  
fast, high-voltage  
BY459F-1500  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Thermal resistance junction to with heatsink compound  
-
-
-
-
-
55  
4.8  
5.9  
-
K/W  
K/W  
K/W  
heatsink  
without heatsink compound  
Rth j-a  
Thermal resistance junction to in free air  
ambient  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VF  
Forward voltage  
IF = 6.5 A  
-
-
-
-
0.95  
1.3  
1.2  
0.25  
1.0  
V
IF = 6.5 A; Tj = 125 ˚C  
VR = VRWMmax  
0.85  
V
IR  
Reverse current  
-
-
mA  
mA  
VR = VRWMmax; Tj = 125 ˚C  
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Vfr  
tfr  
Forward recovery voltage  
Forward recovery time  
IF = 6.5 A; dIF/dt = 50 A/µs  
-
-
-
-
-
8
14  
250  
-
350  
3.0  
V
IF = 6.5 A; dIF/dt = 50 A/µs; VF = 5 V  
IF = 6.5 A; dIF/dt = 50 A/µs; VF = 2 V  
IF = 1 A; -dIF/dt = 50 A/µs; VR 30 V  
IF = 2 A; -dIF/dt = 20 A/µs; VR 30 V  
170  
350  
250  
2.0  
ns  
ns  
ns  
µC  
trr  
Qs  
Reverse recovery time  
Reverse recovery charge  
August 1996  
2
Rev 1.200  
Philips Semiconductors  
Product specification  
Rectifier diode  
fast, high-voltage  
BY459F-1500  
Maximum pulse width / us  
I
100  
10  
1
F
VRRM  
V
pulse  
width tp  
time  
period T  
10%  
time  
tfr  
V
F
V
fr  
5V / 2V  
time  
V
F
10  
100  
line frequency / kHz  
Fig.1. Definition of Vfr and tfr  
Fig.4. Maximum allowable pulse width tp versus line  
frequency; Basic horizontal deflection circuit.  
Ptot / W  
IF  
Ths / C  
dI  
F
6
5
4
3
2
1
0
121.2  
130.8  
140.4  
150  
I
F
dt  
IFWM  
trr  
ton  
time  
f = 82 kHz  
64 kHz  
time  
Qs  
100%  
25%  
I
R
0
2
4
6
8
10  
IFWM / A  
Fig.2. Definition of trr and Qs  
Fig.5. Total dissipation Ptot = f(IFWM); including forward  
recovery losses; Basic horizontal deflection circuit.  
IF / A  
VCC  
30  
20  
10  
0
Tj = 125 C  
Tj = 25 C  
Line output transformer  
LY  
typ  
max  
Cf  
Cs  
D1  
deflection transistor  
1.5  
0
1
2
0.5  
VF / V  
Fig.3. Basic horizontal deflection circuit.  
Fig.6. Typical and maximum forward characteristic  
IF = f(VF); parameter Tj  
August 1996  
3
Rev 1.200  
Philips Semiconductors  
Product specification  
Rectifier diode  
fast, high-voltage  
BY459F-1500  
Zth j-hs / (K/W)  
Vfr / V  
30  
10  
1
max  
typ  
20  
10  
0
0.1  
0.01  
t
p
P
D
t
150  
50  
0
100  
dIF/dt (A/us)  
200  
10us  
100us  
1ms  
10ms  
tp / s  
0.1s  
1s  
10s  
Fig.7. Typical and maximum Vfr = f(dIF/dt); IF = 6.5A;  
Tj = 25˚C  
Fig.9. Transient thermal impedance Zth = f(tp)  
trr / us  
IF = 10 A  
2
1.5  
1
5 A  
2 A  
1 A  
0.5  
0
1
10  
100  
-dIF/dt (A/us)  
Fig.8. Maximum reverse recovery time trr = f(dIF/dt);  
parameter Tj; VR30V  
August 1996  
4
Rev 1.200  
Philips Semiconductors  
Product specification  
Rectifier diode  
fast, high-voltage  
BY459F-1500  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 2 g  
10.2  
max  
5.7  
max  
3.2  
3.0  
4.4  
max  
0.9  
0.5  
2.9 max  
4.4  
4.0  
7.9  
7.5  
17  
max  
seating  
plane  
3.5 max  
4.4  
not tinned  
13.5  
min  
k
a
0.9  
0.7  
0.4  
M
0.55 max  
1.3  
5.08  
top view  
Fig.10. SOD100; The seating plane is electrically isolated from all terminals.  
Notes  
1. Refer to mounting instructions for F-pack envelopes.  
2. Epoxy meets UL94 V0 at 1/8".  
August 1996  
5
Rev 1.200  
Philips Semiconductors  
Product specification  
Rectifier diode  
fast, high-voltage  
BY459F-1500  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 1996  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
August 1996  
6
Rev 1.200  

相关型号:

BY459X

DIODE 10 A, 1500 V, SILICON, RECTIFIER DIODE, Rectifier Diode
NXP

BY459X-1500

Damper diode fast, high-voltage
NXP

BY459X-1500,127

DIODE 1500 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC, TO-220, 2 PIN, Rectifier Diode
NXP

BY459X-1500S

Damper diode fast, high-voltage
NXP

BY479X

DIODE 10 A, 1700 V, SILICON, RECTIFIER DIODE, Rectifier Diode
NXP

BY479X-1700

Damper diode fast, high-voltage
NXP

BY495X-1700

DIODE 1700 V, SILICON, RECTIFIER DIODE, Rectifier Diode
NXP

BY4_06

High voltage silicon rectifier diodes
SEMIKRON

BY4_07

High Voltage Si-Rectifiers
DIOTEC

BY4_11

High Voltage Silicon Rectifier Diodes
DIOTEC

BY4_13

High Voltage Silicon Rectifier Diodes
DIOTEC

BY5-10

Wire Terminal, 10mm2
AMPHENOL