BUK7275-100A [NXP]
TrenchMOS standard level FET; 的TrenchMOS标准水平FET型号: | BUK7275-100A |
厂家: | NXP |
描述: | TrenchMOS standard level FET |
文件: | 总13页 (文件大小:264K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUK7275-100A
TrenchMOS™ standard level FET
Rev. 01 — 25 October 2000
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology, featuring very low on-state resistance.
Product availability:
BUK7275-100A in SOT428 (D-PAK).
2. Features
■ TrenchMOS™ technology
■ Q101 compliant
■ 175 °C rated
■ Standard level compatible.
3. Applications
■ Automotive and general purpose power switching:
◆ 12 V, 24 V and 42 V loads
c
c
◆ Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
mb
2
drain (d)
d
s
3
source (s)
drain (d)
mb
g
2
MBB076
1
3
Top view
MBK091
SOT428 (D-PAK)
1. TrenchMOS is a trademark of Royal Philips Electronics.
BUK7275-100A
TrenchMOS™ standard level FET
Philips Semiconductors
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
−
Max
100
21.7
89
Unit
V
VDS
ID
drain-source voltage (DC)
drain current (DC)
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
−
A
Ptot
Tj
total power dissipation
junction temperature
−
W
−
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 13 A
Tj = 25 °C
64
75
mΩ
mΩ
Tj = 175 °C
−
187
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−
Max
100
100
±20
21.7
15.4
87
Unit
V
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
−
V
−
V
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
−
A
−
A
IDM
Ptot
Tstg
Tj
peak drain current
[1] −
A
total power dissipation
storage temperature
−
89
W
°C
°C
−55
−55
+175
+175
operating junction temperature
Source-drain diode
IDR
reverse drain current (DC)
pulsed reverse drain current
Tmb = 25 °C
−
−
21.7
87
A
A
IDRM
Tmb = 25 °C; pulsed; tp ≤ 10 µs
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID = 14 A;
−
100
mJ
VDS ≤ 100 V; VGS = 10 V; RGS = 50 Ω;
starting T j = 25 °C
[1] IDM is limited by chip, not package.
9397 750 07645
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 25 October 2000
2 of 13
BUK7275-100A
TrenchMOS™ standard level FET
Philips Semiconductors
03aa24
03aa16
120
120
I
P
der
(%)
der
(%)
100
100
80
60
40
20
0
80
60
40
20
0
0
25
50
75 100 125 150 175 200
o
0
25
50
75 100 125 150 175 200
o
T
( C)
T
( C)
mb
mb
V
GS ≥ 4.5 V
Ptot
Pder
=
× 100%
----------------------
P
ID
°
tot(25 C)
Ider
=
× 100%
------------------
I
°
D(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03nb21
1000
I
D
(A)
100
10
1
R
= V / I
DS
DSon
D
t
= 10 us
p
100 us
1 ms
t
p
D.C.
P
δ =
10 ms
100 ms
T
t
t
p
T
0.1
V
(V)
DS
1
10
100
1000
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07645
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 25 October 2000
3 of 13
BUK7275-100A
TrenchMOS™ standard level FET
Philips Semiconductors
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol
Rth(j-a)
Parameter
Conditions
Value
71.4
1.7
Unit
K/W
K/W
thermal resistance from junction to ambient
minimum footprint, FR4 board
Rth(j-mb)
thermal resistance from junction to mounting Figure 4
base
7.1 Transient thermal impedance
03nb22
10
Z
th(j-mb)
(K/W)
1
δ = 0.5
t
p
P
δ =
0.1
T
t
t
p
T
0.01
-6
-5
10
-4
10
-3
10
-2
10
-1
10
10
1
t
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07645
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 25 October 2000
4 of 13
BUK7275-100A
TrenchMOS™ standard level FET
Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Static characteristics
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
100
89
−
−
−
−
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
2
1
−
3
−
−
4
V
V
V
Tj = 175 °C
−
Tj = −55 °C
4.4
IDSS
drain-source leakage current
gate-source leakage current
VDS = 100 V; VGS = 0 V
Tj = 25 °C
−
−
−
0.05 10
µA
Tj = 175 °C
−
500 µA
IGSS
VGS = ±20 V; VDS = 0 V
2
100 nA
RDSon
drain-source on-state resistance VGS = 10 V; ID = 13 A; Figure 7 and 8
Tj = 25 °C
−
−
64
75
mΩ
Tj = 175 °C
−
187 mΩ
Dynamic characteristics
Ciss
Coss
Crss
td(on)
tr
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12
−
−
−
−
−
−
−
−
910 1210 pF
130 152 pF
80
8
107 pF
VDD = 30 V; RL = 2.2 Ω; VGS = 10 V;
RG = 5.6 Ω;
−
−
−
−
−
ns
ns
ns
ns
nH
39
26
24
2.5
td(off)
tf
turn-off delay time
fall time
Ld
internal drain inductance
measured from drain lead from package to
centre of die
Ls
internal source inductance
measured from source lead from package to
source bond pad
−
7.5
−
nH
9397 750 07645
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 25 October 2000
5 of 13
BUK7275-100A
TrenchMOS™ standard level FET
Philips Semiconductors
Table 5: Characteristics…continued
Tj = 25 °C unless otherwise specified
Symbol Parameter
Source-drain diode
Conditions
Min Typ Max Unit
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS = 0 V; Figure 15
−
0.85 1.2
V
trr
reverse recovery time
recovered charge
IS = 13 A; dIS/dt = −100 A/µs; VGS = −10 V;
VDS = 30 V
−
−
64
−
−
ns
Qr
120
nC
03nb30
90
03nb31
60
R
DSon
I
(mΩ)
D
(A)
10
9
V
(V) =
85
80
75
70
65
60
55
50
8
20
GS
50
7.5
40
30
20
10
0
6.5
5.5
4.5
0
2
4
6
8
10
(V)
5
10
15
20
V
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; ID = 10 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. On-state resistance: typical values.
03aa29
3
2.8
2.6
2.4
2.2
2
03nb32
120
a
R
DSon
(mΩ)
10
V
(V)=
5.5
7
8
GS
6
6.5
100
1.8
1.6
1.4
1.2
1
80
60
40
0.8
0.6
0.4
0.2
0
-60
-20
20
60
100
140
180
0
10
20
30
40
50
o
T ( C)
I
(A)
D
j
Tj = 25 °C
RDSon
a =
---------------------------
RDSon(25 C)
°
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
9397 750 07645
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 25 October 2000
6 of 13
BUK7275-100A
TrenchMOS™ standard level FET
Philips Semiconductors
03aa32
03aa35
5
-1
-2
-3
-4
-5
-6
10
10
10
10
10
10
4.5
I
D
V
GS(th)
(A)
4
(V)
max.
3.5
3
typ.
min
2.5
2
min
typ
max
1.5
1
0.5
0
-60
-20
20
60
100
140
o
180
0
1
2
3
4
5
T ( C)
V
(V)
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03nb28
03nb33
20
2000
C (pF)
1800
g
(S)
fs
1600
1400
1200
15
10
5
1000
Ciss
800
600
400
200
Coss
Crss
0
0
0.01
0.1
1
10
100
0
10
20
30
40
(A)
I
V
(V)
DS
D
Tj = 25 °C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07645
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 25 October 2000
7 of 13
BUK7275-100A
TrenchMOS™ standard level FET
Philips Semiconductors
03nb29
03nb27
35
10
9
8
7
6
5
4
3
2
1
0
I
D
V
GS
(V)
(A)
30
V
= 14 V
DS
25
20
15
V
= 80 V
DS
T = 175 OC
j
10
5
T = 25 OC
j
0
0
2
4
6
8
(V)
0
10
20
30
V
Q
(nC)
G
GS
VDS = 25 V
Tj = 25 °C; ID = 25 A
Fig 13. Transfer characteristics; typical values.
Fig 14. Turn-on gate charge characteristics; typical
values.
03nb26
45
I
S
(A)
40
35
30
25
20
15
10
5
O C
T = 175
j
T = 25O
j
C
0
0.0
0.2
0.4
0.6
0.8
1.0
V
1.2
(V)
SD
VGS = 0 V
Fig 15. Reverse diode current; typical values.
9397 750 07645
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 25 October 2000
8 of 13
BUK7275-100A
TrenchMOS™ standard level FET
Philips Semiconductors
9. Package outline
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
seating plane
y
A
A
E
A
2
A
b
D
1
1
2
mounting
base
E
1
D
H
E
L
2
2
L
1
L
1
3
b
b
w
M
A
c
1
e
e
1
0
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
b
E
H
E
max.
D
L
1
min.
A
max.
E
max.
y
D
max.
1
1
(1)
1
A
A
b
2
UNIT
mm
b
c
e
e
1
L
L
w
2
1
2
max.
max.
min.
max.
0.65 0.89
0.45 0.71
0.7
0.5
2.38
2.22
0.89 1.1
0.71 0.9
5.36
5.26
0.4 6.22
0.2 5.98
6.73
6.47
10.4 2.95
9.6
2.55
4.81
4.45
4.57
0.2
0.2
4.0 2.285
0.5
Note
1. Measured from heatsink back to lead.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
98-04-07
99-09-13
SOT428
TO-252
SC-63
Fig 16. SOT428 (D-PAK).
9397 750 07645
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 25 October 2000
9 of 13
BUK7275-100A
TrenchMOS™ standard level FET
Philips Semiconductors
10. Revision history
Table 6: Revision history
Rev Date
CPCN
-
Description
01 20001025
Product specification; initial version.
9397 750 07645
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 25 October 2000
10 of 13
BUK7275-100A
TrenchMOS™ standard level FET
Philips Semiconductors
11. Data sheet status
[1]
Datasheet status
Product status Definition
Development
Objective specification
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
a
short-form specification is
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
9397 750 07645
© Philips Electronics N.V. 2000 All rights reserved.
Product specification
Rev. 01 — 25 October 2000
11 of 13
BUK7275-100A
TrenchMOS™ standard level FET
Philips Semiconductors
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For all other countries apply to: Philips Semiconductors,
Marketing Communications,
Internet: http://www.semiconductors.philips.com
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
(SCA70)
9397 750 07645
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 25 October 2000
12 of 13
BUK7275-100A
TrenchMOS™ standard level FET
Philips Semiconductors
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2
3
4
5
6
7
7.1
8
9
10
11
12
13
© Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 25 October 2000
Document order number: 9397 750 07645
相关型号:
BUK7506-30127
TRANSISTOR 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
NXP
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