BUK75 [NXP]
N-channel TrenchMOS standard level FET; N沟道的TrenchMOS标准水平FET
| 型号： | BUK75 |
| 厂家： | 
NXP |
| 描述： | N-channel TrenchMOS standard level FET |
| 文件： | 总14页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK75/7608-40B
N-channel TrenchMOS standard level FET
Rev. 02 — 16 November 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in a plastic package using
NXP High-Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
I Very low on-state resistance
I Q101 compliant
I 175 °C rated
I Standard level compatible
1.3 Applications
I Automotive systems
I General purpose power switching
I 12 V loads
I Motors, lamps and solenoids
1.4 Quick reference data
I EDS(AL)S ≤ 241 mJ
I ID ≤ 75 A
I RDSon = 6.6 mΩ (typ)
I Ptot ≤ 157 W
2. Pinning information
Table 1.
Pinning - SOT78 and SOT404, simplified outlines and symbol
Pin
1
Description
Gate (G)
Simplified outline
Symbol
mb
mb
D
S
[1]
2
Drain (D)
3
Source (S)
mounting base,
connected to
drain (D)
G
mb
mbb076
2
1
3
SOT404 (D2PAK)
1
2 3
SOT78 (TO-220AB)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
BUK75/7608-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
plastic single-ended package; heat sink mounted; 1 mounting hole; 3-leads SOT78A
BUK7508-40B
BUK7608-40B
TO-220AB
D2PAK
plastic single-ended surface mounted package (D2PAK); 3 leads (one lead SOT404
cropped)
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
40
Unit
V
VDS
VDGR
VGS
ID
drain-source voltage
-
drain-gate voltage (DC)
gate-source voltage
drain current
RGS = 20 kΩ
-
40
V
-
±20
101
75
V
[1]
[2]
[1]
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
-
A
-
A
Tmb = 100 °C; VGS = 10 V; see Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
Tmb = 25 °C; see Figure 1
-
71
A
IDM
Ptot
Tstg
Tj
peak drain current
-
407
157
+175
+175
A
total power dissipation
storage temperature
junction temperature
-
W
°C
°C
−55
−55
Source-drain diode
[1]
[2]
IDR
reverse drain current
Tmb = 25 °C
-
-
-
101
75
A
A
A
IDRM
peak reverse drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
unclamped inductive load; ID = 75 A; VDS ≤ 40 V;
407
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
-
241
mJ
VGS = 10 V; RGS = 50 Ω; starting at Tmb = 25 °C
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
BUK75_7608-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2007
2 of 14
BUK75/7608-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aac070
003aac081
120
120
P
I
D
der
(%)
(A)
80
80
(1)
40
40
0
0
0
50
100
150
200
0
50
100
150
200
T
(°C)
T
(°C)
mb
mb
V
GS ≥ 10 V
Ptot
Pder
=
× 100 %
-----------------------
[1] Capped at 75 A due to package.
Ptot(25°C)
Fig 1. Normalized total power dissipation as a
function of solder point temperature
Fig 2. Continuous drain current as a function of
mounting base temperature
003aac079
3
10
Limit R
= V / I
DS D
DSon
I
D
(A)
t
= 10 µs
p
2
10
100 µs
(1)
1 ms
10
10 ms
100 ms
DC
1
10
−1
2
1
10
10
V
(V)
DS
Tmb = 25 °C; IDM is single pulse.
[1] Capped at 75 A due to package.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK75_7608-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2007
3 of 14
BUK75/7608-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max Unit
Rth(j-mb) thermal resistance from junction to mounting
base
see Figure 4
-
-
0.95 K/W
[1]
[2]
Rth(j-a)
thermal resistance from junction to ambient
-
-
60
50
-
-
K/W
K/W
[1] Vertical in still air; SOT78 package.
[2] mounted on a printed circuit board; minimum footprint; SOT404 package
003aac080
1
δ = 0.5
Z
th(j− mb)
(K/W)
0.2
−1
0.1
10
10
10
0.05
0.02
t
p
single pulse
P
δ =
−2
−3
T
t
t
p
T
t
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
(s)
p
Fig 4. Transient thermal impedance from junction to mounting bast as a function of pulse duration
BUK75_7608-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2007
4 of 14
BUK75/7608-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
40
36
-
-
-
-
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
2
1
-
3
-
4
V
V
V
Tj = 175 °C
-
Tj = −55 °C
-
4.4
IDSS
drain leakage current
gate leakage current
VDS = 40 V; VGS = 0 V
Tj = 25 °C
-
-
-
0.02
1
µA
µA
nA
Tj = 175 °C
-
500
100
IGSS
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID =25 A; see Figure 6 and 8
Tj = 25 °C
2
RDSon
drain-source on-state
resistance
-
-
6.6
-
8
mΩ
Tj = 175 °C
15.2 mΩ
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
ID = 25 A; VDD = 32 V; VGS = 10 V;
see Figure 14
-
-
-
-
-
-
-
-
-
-
-
36
9
-
-
-
nC
nC
nC
12
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 12
2017 2689 pF
486
213
20
583
pF
pF
ns
ns
ns
ns
nH
291
VDD = 30 V; RL = 1.2 Ω;
-
-
-
-
-
VGS = 10 V; RG = 10 Ω
51
td(off)
tf
turn-off delay time
fall time
20
33
LD
internal drain inductance
from drain lead 6 mm from
package to center of die
from contact screw on
mounting base to center of die
SOT78
4,5
-
-
-
3.5
2.5
7.5
nH
nH
nH
from upper edge of drain
mounting base to center of die
SOT404
-
-
LS
internal source inductance
from source lead 6 mm from
package to source bond pad
Source-drain diode
BUK75_7608-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2007
5 of 14
BUK75/7608-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
Table 5.
Characteristics …continued
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
VSD
trr
source-drain voltage
reverse recovery time
recovered charge
IS = 25 A; VGS = 0 V; see Figure 15
-
-
-
0.85 1.2
V
IS = 20 A; dIS/dt = −100 A/µs;
53
44
-
-
ns
nC
VGS = −10 V; VDS = 20 V
Qr
003aac076
003aac075
300
14
V
(V) = 10
9.5
GS
20
14
12
R
DSon
(mΩ)
I
D
(A)
12
9.0
8.5
8.0
200
10
8
7.5
7.0
100
6.5
6.0
5.5
6
5.0
4.5
0
4
0
2
4
6
8
10
(V)
5
10
15
20
V
V
(V)
GS
DS
Tj = 25 °C; tp = 300 µs
Tj = 25 °C; ID = 25 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aac077
003aab851
16
2
6.0 6.5 7.0
8.0
a
R
DSon
(mΩ)
1.5
V
(V) = 10
GS
12
1
0.5
0
8
4
20
0
100
200
300
−60
0
60
120
180
I
(A)
T (°C)
j
D
Tj = 25 °C
RDSon
a =
-----------------------------
RDSon(25°C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK75_7608-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2007
6 of 14
BUK75/7608-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aab852
003aab853
−1
−2
−3
−4
−5
−6
5
10
I
V
D
GS(th)
(A)
(V)
min
typ
max
4
10
10
10
10
10
max
typ
3
2
1
0
min
−60
0
60
120
160
0
2
4
6
T (°C)
V
(V)
GS
j
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aac073
003aac078
60
3000
C
iss
g
fs
C
(S)
(pF)
40
2000
1000
0
C
oss
20
C
rss
0
−2
−1
2
0
20
40
60
10
10
1
10
10
I
(A)
V
DS
(V)
D
Tj = 25 °C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
BUK75_7608-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2007
7 of 14
BUK75/7608-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aac074
003aac072
100
10
V
(V)
GS
I
D
(A)
8
6
4
2
0
V
= 14 V
DD
75
V
= 32 V
DD
50
25
0
T = 175 °C
25 °C
j
0
2
4
6
8
0
10
20
30
40
V
(V)
Q (nC)
G
GS
VDS = 25 V
Tj = 25 °C; ID = 25 A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
003aac071
100
I
S
(A)
75
50
25
0
T = 175 °C
25 °C
j
0.0
0.3
0.6
0.9
1.2
V
(V)
SD
VGS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
BUK75_7608-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2007
8 of 14
BUK75/7608-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78A
E
p
A
A
1
q
mounting
base
D
1
D
(1)
L
L
2
1
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
L
max.
(1)
2
e
A
b
D
E
L
D
L
1
A
1
c
UNIT
p
q
Q
1
1
4.5
4.1
1.39
1.27
0.9
0.6
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
2.54
Note
1. Terminals in this zone are not tinned.
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
03-01-22
05-03-14
SOT78A
3-lead TO-220AB
SC-46
Fig 16. Package outline SOT78A (TO-220AB)
BUK75_7608-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2007
9 of 14
BUK75/7608-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
05-02-11
06-03-16
SOT404
Fig 17. Package outline SOT404 (D2PAK)
BUK75_7608-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2007
10 of 14
BUK75/7608-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
8. Soldering
10.85
10.60
10.50
1.50
7.50
7.40
1.70
2.15
1.50
2.25
8.275
8.35
8.15
4.60
0.30
4.85
5.40
7.95
8.075
3.00
0.20
1.20
1.30
1.55
solder lands
solder resist
occupied area
solder paste
5.08
msd057
Dimensions in mm.
Fig 18. Reflow soldering footprint for SOT404
BUK75_7608-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2007
11 of 14
BUK75/7608-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
9. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK75_7608-40B_2
Modifications:
20071116
Product data sheet
-
BUK75_7608_40B-01
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
BUK75_7608_40B-01
20030319
Product data sheet
-
-
BUK75_7608-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2007
12 of 14
BUK75/7608-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
to result in personal injury, death or severe property or environmental
10.2 Definitions
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
TrenchMOS — is a trademark of NXP B.V.
11. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BUK75_7608-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2007
13 of 14
BUK75/7608-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
12. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
8
9
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
10.1
10.2
10.3
10.4
11
12
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 November 2007
Document identifier: BUK75_7608-40B_2
相关型号：
BUK7506-30127
TRANSISTOR 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
NXP
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