BU2525DF [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BU2525DF |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总7页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to
32 kHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
Collector-emitter voltage peak value
VBE = 0 V
-
1500
V
VCEO
IC
Collector-emitter voltage (open base)
Collector current (DC)
-
800
12
30
45
5.0
-
V
A
-
-
ICM
Collector current peak value
Total power dissipation
A
Ptot
VCEsat
ICsat
ts
T
hs ≤ 25 ˚C
-
-
W
V
Collector-emitter saturation voltage
Collector saturation current
Storage time
IC = 8.0 A; IB = 1.6 A
8.0
3.0
A
ICsat = 8.0 A; IB(end) = 1.1 A
4.0
µs
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
case
base
2
collector
emitter
b
3
Rbe
case isolated
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
800
12
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
Collector current peak value
Base current (DC)
-
30
A
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
-
8
12
A
Base current peak value
Reverse base current
-
A
average over any 20 ms period
-
200
9
mA
A
Reverse base current peak value 1
Total power dissipation
Storage temperature
-
-
Ths ≤ 25 ˚C
45
W
˚C
˚C
-65
-
150
150
Junction temperature
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-hs
Rth j-hs
Rth j-a
Junction to heatsink
Junction to heatsink
Junction to ambient
without heatsink compound
with heatsink compound
in free air
-
-
3.7
2.8
-
K/W
K/W
K/W
35
1 Turn-off current.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
;
IEBO
Reb
BVEBO
VCEOsust
Emitter cut-off current
Base-emitter resistance
Emitter-base breakdown voltage
VEB = 6.0 V; IC = 0 A
VEB = 6.0 V
72
-
7.5
800
110
55
13.5
-
218
mA
Ω
V
V
-
-
-
IB = 600 mA
Collector-emitter sustaining voltage IB=0A ;Ic = 100mA
L = 25 mH
VCEsat
VBEsat
hFE
hFE
VF
Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A
-
-
-
5
-
-
-
5.0
1.1
-
9.5
2.0
V
V
Base-emitter saturation voltage
DC current gain
IC = 8.0 A; IB = 1.6 A
IC = 1 A; VCE = 5 V
IC = 8 A; VCE = 5 V
IF = 8 A
11
7
Diode forward voltage
1.6
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
145
-
pF
Switching times (32 kHz line
deflection circuit)
ICsat = 8.0 A; LC = 260 µH; Cfb = 13 nF;
I
B(end) = 1.1 A; LB = 2.5 µH; -VBB = 4 V;
(-dIB/dt = 1.6 A/µs)
ts
tf
Turn-off storage time
Turn-off fall time
3.0
0.2
4.0
0.35
µs
µs
Vfr
tfr
Anti-parallel diode forward recovery IF = 8 A; dIF/dt = 50 A/µs
16
-
-
V
voltage
Anti-parallel diode forward recovery VF = 5 V
time
410
ns
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DF
I
+ 150 v nominal
adjust for ICsat
Csat
TRANSISTOR
IC
IB
DIODE
t
t
Lc
IBend
D.U.T.
10us
13us
32us
LB
IBend
-VBB
Cfb
VCE
Rbe
t
Fig.1. Switching times waveforms.
Fig.4. Switching times test circuit.
ICsat
90 %
hFE
100
10
1
Tj = 25 C
Tj = 125 C
IC
5 V
10 %
tf
t
ts
1V
IB
IBend
t
0.1
1
10
100
- IBM
IC / A
Fig.2. Switching times definitions.
Fig.5. Typical DC current gain. hFE = f (IC)
parameter VCE
I
VBESAT / V
I
F
1.2
1.1
1
F
Tj = 25 C
Tj = 125 C
10%
0.9
0.8
0.7
0.6
0.5
0.4
time
t
fr
V
IC/IB=
3
F
4
5
V
5 V
fr
V
F
0.1
1
10
time
IC / A
Fig.3. Definition of anti-parallel diode Vfr and tfr
Fig.6. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DF
VCESAT / V
Eoff / uJ
1000
100
10
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
IC = 8 A
7 A
IC/IB =
5
4
3
Tj = 25 C
Tj = 125 C
1
100
0.1
10
0.1
1
10
IC / A
IB / A
Fig.7. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
Fig.10. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; f = 32 kHz
VBESAT / V
ts, tf / us
1.2
1.1
1
12
11
10
9
Tj = 25 C
Tj = 125 C
8
ts
7
0.9
0.8
0.7
0.6
6
5
IC=
8 A
4
IC =
8 A
3
6 A
5 A
4 A
2
7 A
1
tf
1
0
0
1
2
3
4
0.1
10
IB / A
IB / A
Fig.8. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
Fig.11. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
Normalised Power Derating
PD%
120
VCESAT / V
10
with heatsink compound
110
Tj = 25 C
Tj = 125 C
100
90
80
70
60
50
40
30
20
10
0
8 A
1
6 A
5 A
IC = 4 A
0.1
0
20
40
60
80
Ths /
100
120
140
0.1
1
10
C
IB / A
Fig.9. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
Fig.12. Normalised power dissipation.
PD% = 100 PD/PD 25˚C = f (Ths)
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DF
Zth / (K/W)
0.5
10
1
IC / A
100
tp =
= 0.01
ICM
0.2
0.1
0.05
40 us
0.1
ICDC
0.02
10
t
T
p
t
p
P
D =
D
0.01
0.001
100 us
t
D = 0
T
1E-06
1E-04
1E-02
t / s
1E+00
Ptot
Fig.13. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
1
1 ms
0.1
10 ms
DC
0.01
VCE / V
1000
1
10
100
Fig.14. Forward bias safe operating area. Ths = 25 ˚C
ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
September 1997
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DF
MECHANICAL DATA
Dimensions in mm
15.3 max
5.2 max
Net Mass: 5.5 g
3.1
3.3
0.7
7.3
3.2
o
45
6.2
5.8
21.5
max
seating
plane
3.5 max
not tinned
3.5
15.7
min
1
2
3
1.2
1.0
0.7 max
2.0
2.1 max
M
0.4
5.45
5.45
Fig.15. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DF
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
7
Rev 1.200
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