BTA208S-800B/T3 [NXP]
TRIAC, 800 V, 8 A, SNUBBERLESS TRIAC, TO-252, PLASTIC, SC-63, DPAK-3;
| 型号： | BTA208S-800B/T3 |
| 厂家： | 
NXP |
| 描述： | TRIAC, 800 V, 8 A, SNUBBERLESS TRIAC, TO-252, PLASTIC, SC-63, DPAK-3 栅 三端双向交流开关 栅极 |
| 文件： | 总13页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTA208S-600B; BTA208S-800B
Three-quadrant triacs high commutation
Rev. 02 — 31 May 2005
Product data sheet
1. Product profile
1.1 General description
Passivated high commutation triac in a plastic envelope, suitable for surface mounting,
intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
These devices will commutate the full rated RMS current at the maximum rated junction
temperature, without the aid of a snubber.
1.2 Features
■ High maximum junction temperature
■ High commutation capability
■ Surface mounting package
■ Low thermal resistance
1.3 Quick reference data
■ VDRM ≤ 600 V (BTA208S-600B)
■ VDRM ≤ 800 V (BTA208S-800B)
■ IT(RMS) ≤ 8 A
■ ITSM ≤ 65 A
2. Pinning information
Table 1:
Pinning
Pin
1
Description
Simplified outline
Symbol
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mb
T2
T1
G
2
3
sym051
[1]
mb
mounting base
2
1
3
SOT428 (DPAK)
[1] Connected to main terminal 2 (T2).
BTA208S-600B; BTA208S-800B
Philips Semiconductors
Three-quadrant triacs high commutation
3. Ordering information
Table 2:
Ordering information
Type number
Package
Name
Description
Version
BTA208S-600B
BTA208S-800B
TO-252 plastic single-ended surface mounted package (DPAK); SOT428
3 leads (one lead cropped)
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max Unit
VDRM
repetitive peak off-state voltage
[1]
BTA208S-600B
BTA208S-800B
-
-
-
600
800
8
V
V
A
IT(RMS)
ITSM
RMS on-state current
full sine wave; Tmb ≤ 102 °C;
see Figure 4 and 5
non-repetitive peak on-state current
full sine wave; Tj = 25 °C prior to surge;
see Figure 2 and 3
t = 20 ms
-
65
71
21
100
2
A
t = 16.7 ms
-
A
I2t
I2t for fusing
t = 10 ms
-
A2s
A/µs
A
dIT/dt
IGM
rate of rise of on-state current
peak gate current
peak gate voltage
peak gate power
ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs
-
-
VGM
PGM
PG(AV)
Tstg
Tj
-
5
V
-
5
W
W
average gate power
storage temperature
junction temperature
over any 20 ms period
-
0.5
−40
+150 °C
125 °C
-
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/µs.
9397 750 14861
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 May 2005
2 of 13
BTA208S-600B; BTA208S-800B
Philips Semiconductors
Three-quadrant triacs high commutation
001aac659
12
101
α = 180
T
mb(max)
(˚C)
α
P
120
90
tot
105
109
113
117
121
125
(W)
α
8
60
30
4
0
0
2
4
6
8
10
I
(A)
T(RMS)
α = conduction angle
Fig 1. On-state power dissipation as a function of RMS on-state current; maximum values
001aac667
70
I
I
T
TSM
I
TSM
(A)
50
t
= 25 °C max
t
p
T
j(init)
40
30
20
10
0
2
3
1
10
10
10
number of half cycles
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of number of half cycles; sinusoidal currents; maximum
values
9397 750 14861
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 May 2005
3 of 13
BTA208S-600B; BTA208S-800B
Philips Semiconductors
Three-quadrant triacs high commutation
001aac663
3
10
I
I
TSM
t
T
dl /dt limit
T
I
TSM
(A)
T
T
= 25 °C max
j(init)
2
10
10
10
−2
−1
2
10
1
10
10
t
(ms)
p
tp ≤ 20 ms
Fig 3. Non-repetitive peak on-state current as a function of pulse width; sinusoidal currents; maximum values
001aac661
001aac665
10
25
I
I
T(RMS)
(A)
T(RMS)
(A)
102 °C
8
6
4
2
0
20
15
10
5
0
10
−2
−1
−50
0
50
100
150
(°C)
10
1
10
T
surge duration (s)
mb
f = 50 Hz; Tmb ≤ 102 °C
Fig 4. RMS on-state current as a function of surge
duration; sinusoidal currents; maximum values
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values
9397 750 14861
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 May 2005
4 of 13
BTA208S-600B; BTA208S-800B
Philips Semiconductors
Three-quadrant triacs high commutation
5. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max Unit
Rth(j-mb) thermal resistance from junction
to mounting base
full cycle; see Figure 6
half cycle; see Figure 6
-
-
-
-
2.0
2.4
-
K/W
K/W
K/W
-
Rth(j-a)
thermal resistance from junction to
ambient
printed-circuit board (FR4)
mounted; footprint as in Figure 14
75
001aac673
10
Z
th(j−mb)
unidirectional
bidirectional
(K/W)
1
−1
10
P
D
t
t
p
−2
10
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
t
(s)
p
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
9397 750 14861
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 May 2005
5 of 13
BTA208S-600B; BTA208S-800B
Philips Semiconductors
Three-quadrant triacs high commutation
6. Static characteristics
Table 5:
Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
[1]
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; see Figure 8
T2+ G+
2
2
2
18
21
34
50
50
50
mA
mA
mA
T2+ G−
T2− G−
IL
latching current
VD = 12 V; IGT = 0.1 A; see Figure 10
T2+ G+
-
-
-
-
-
-
31
34
30
31
1.3
0.7
60
90
60
60
1.65
1.5
-
mA
mA
mA
mA
V
T2+ G−
T2− G−
IH
holding current
VD = 12 V; IGT = 0.1 A; see Figure 11
IT = 10 A; see Figure 9
VD = 12 V; IT = 0.1 A; see Figure 7
VD = 400 V; IT = 0.1 A; Tj = 125 °C
VD = VDRM(max); Tj = 125 °C
VT
VGT
on-state voltage
gate trigger voltage
V
0.25 0.4
0.1
V
ID
off-state current
-
0.5
mA
[1] Device does not trigger in the T2− G+ quadrant.
9397 750 14861
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 May 2005
6 of 13
BTA208S-600B; BTA208S-800B
Philips Semiconductors
Three-quadrant triacs high commutation
7. Dynamic characteristics
Table 6:
Dynamic characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
dVD/dt
rate of rise of off-state voltage
VDM = 0.67VDRM(max); Tj = 125 °C;
1000 4000
-
V/µs
exponential waveform; gate open circuit
dIcom/dt rate of rise of commutating
current
VDM = 400 V; Tj = 125 °C; IT(RMS) = 8 A;
without snubber; gate open circuit;
see Figure 12
-
-
14
2
-
A/ms
tgt
gate-controlled turn-on time
ITM = 12 A; VD = VDRM(max); IG = 0.1 A;
-
µs
dIG/dt = 5 A/µs
001aac334
001aac669
1.6
(T )
3
(1)
V
GT
j
I
(T )
GT j
V
(25°C)
I
(25°C)
GT
GT
1.2
2
(2)
(3)
0.8
1
0.4
−50
0
−50
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
Fig 8. Normalized gate trigger current as a function of
junction temperature
9397 750 14861
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 May 2005
7 of 13
BTA208S-600B; BTA208S-800B
Philips Semiconductors
Three-quadrant triacs high commutation
001aac336
001aac670
3
25
(1)
(2)
(3)
I
T
I (T )
L
j
(A)
20
I (25°C)
L
2
15
10
5
1
0
−50
0
0
50
100
150
0
1
2
3
T (°C)
j
V
(V)
T
VO = 1.264 V; RS = 37.8 mΩ
(1) Tj = 125 °C; typical values
(2) Tj = 25 °C; maximum values
(3) Tj = 125 °C; maximum values
Fig 9. On-state characteristic
Fig 10. Normalized latching current as a function of
junction temperature
001aac337
001aac675
3
3
10
I (T )
dl
com
/dt
H
j
(A/ms)
I (25°C)
H
2
2
1
0
10
10
1
−50
0
50
100
150
20
60
100
140
T (°C)
j
T (°C)
j
Fig 11. Normalized holding current as a function of
junction temperature
Fig 12. Rate of rise of commutating current as a
function of junction temperature; typical values
8. Package information
Plastic meets UL94 V-0 at 1⁄8 inch.
9397 750 14861
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 May 2005
8 of 13
BTA208S-600B; BTA208S-800B
Philips Semiconductors
Three-quadrant triacs high commutation
9. Package outline
Plastic single-ended surface mounted package (DPAK); 3 leads (one lead cropped)
SOT428
y
E
A
A
A
b
2
E
1
1
mounting
base
D
2
D
1
H
D
2
L
L
2
L
1
1
3
b
1
b
M
c
w
A
e
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
y
max
D
min
E
min
L
1
min
2
1
UNIT
A
A
1
b
b
b
c
D
E
e
e
1
H
D
L
L
2
w
1
2
1
2.38
2.22
0.93
0.73
0.89
0.71
1.1
0.9
5.46
5.00
0.56
0.20
6.22
5.98
6.73
6.47
10.4
9.6
2.95
2.55
0.9
0.5
4.0
4.45
0.5
mm
2.285 4.57
0.2
0.2
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
05-02-09
05-02-11
SOT428
SC-63
TO-252
Fig 13. Package outline SOT428 (TO-252)
9397 750 14861
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 May 2005
9 of 13
BTA208S-600B; BTA208S-800B
Philips Semiconductors
Three-quadrant triacs high commutation
10. Mounting
7.00
6.15
5.90
5.80
1.80
1.00
4.725
4.60
5.75 5.65
6.50
1.15
3.60
6.00
2.45
6.00
6.125
2.40 2.30
0.30
1.50
1.30
1.40
1.65
solder lands
solder resist
occupied area
solder paste
4.57
SOT428
Dimensions in mm
Fig 14. SOT428: minimum pad sizes for surface mounting
9397 750 14861
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 May 2005
10 of 13
BTA208S-600B; BTA208S-800B
Philips Semiconductors
Three-quadrant triacs high commutation
11. Revision history
Table 7:
Revision history
Document ID
Release date Data sheet status
Change
notice
Doc. number
Supersedes
BTA208S_SER_B_2
Modifications:
20050531 Product data sheet
-
9397 750 14861 BTA208S_SERIES_B_1
• The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
• 500 V types removed.
• Alternative pinning types removed.
BTA208S_SERIES_B_1 19970901
Product specification -
-
-
9397 750 14861
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 May 2005
11 of 13
BTA208S-600B; BTA208S-800B
Philips Semiconductors
Three-quadrant triacs high commutation
12. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
13. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
Notice — All referenced brands, product names, service names and
14. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14861
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 May 2005
12 of 13
BTA208S-600B; BTA208S-800B
Philips Semiconductors
Three-quadrant triacs high commutation
17. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Package information . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information . . . . . . . . . . . . . . . . . . . . 12
3
4
5
6
7
8
9
10
11
12
13
14
15
16
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 31 May 2005
Document number: 9397 750 14861
Published in The Netherlands
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