BSS87,115 [NXP]
BSS87 - 200 V, N-channel vertical D-MOS transistor SOT-89 3-Pin;
| 型号： | BSS87,115 |
| 厂家： | 
NXP |
| 描述： | BSS87 - 200 V, N-channel vertical D-MOS transistor SOT-89 3-Pin 开关 晶体管 |
| 文件： | 总8页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BSS87
N-channel enhancement mode
vertical D-MOS transistor
Product specification
2001 May 18
Supersedes data of 1997 June 23
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSS87
FEATURES
PINNING - SOT89
PIN
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
DESCRIPTION
1
2
3
source
drain
gate
• No secondary breakdown
• Low RDSon
.
APPLICATIONS
d
handbook, halfpage
• Line current interruptor in telephone sets
• Applications in relay, high-speed and line transformer
drivers.
g
1
2
3
s
DESCRIPTION
Bottom view
MAM355
N-channel enhancement mode vertical D-MOS transistor
in a SOT89 package.
Fig.1 Simplified outline (SOT89) and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
VGSO
ID
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
−
−
200
±20
400
1
V
open drain
−
−
V
−
−
mA
W
Ω
Ptot
RDSon
yfs
total power dissipation
T
amb ≤ 25 °C
−
−
drain-source on-state resistance ID = 400 mA; VGS = 10 V
forward transfer admittance ID = 400 mA; VDS = 25 V
−
1.6
750
3
140
−
mS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VDS
VGSO
ID
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
CONDITIONS
MIN.
MAX.
200
UNIT
−
V
V
open drain
−
±20
400
1.6
−
mA
A
IDM
Ptot
Tstg
Tj
peak drain current
−
total power dissipation
storage temperature
junction temperature
T
amb ≤ 25 °C; note 1
−
1
W
−55
−
+150
150
°C
°C
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
10 × 10 mm
2001 May 18
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSS87
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
125
K/W
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
10 × 10 mm
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
drain-source breakdown voltage
drain-source leakage current
CONDITIONS
ID = 250 µA; VGS = 0
VDS = 60 V; VGS = 0
MIN. TYP. MAX. UNIT
V(BR)DSS
IDSS
200
−
−
−
V
−
200
60
nA
µA
VDS = 200 V; VGS = 0
−
0.1
−
IGSS
VGSth
RDSon
Yfs
gate-source leakage current
gate-source threshold voltage
drain-source on-state resistance
transfer admittance
VGS = ±20 V; VDS = 0
ID = 1 mA; VGS = VDS
ID = 400 mA; VGS = 10 V
ID = 400 mA; VDS = 25 V
−
±100 nA
0.8
−
−
2.8
3
V
1.6
750
100
Ω
140
−
−
mS
pF
Ciss
input capacitance
VDS = 25 V; VGS = 0;
f = 1 MHz
120
Coss
Crss
output capacitance
VDS = 25 V; VGS = 0;
f = 1 MHz
−
−
20
10
30
15
pF
pF
reverse transfer capacitance
VDS = 25 V; VGS = 0;
f = 1 MHz
Switching times (see Figs 2 and 3)
ton
turn-on time
ID = 250 mA; VDD = 50 V;
VGS = 0 to 10 V
−
−
6
10
60
ns
ns
toff
turn-off time
ID = 250 mA; VDD = 50 V;
VGS = 0 to 10 V
49
2001 May 18
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSS87
handbook, halfpage
INPUT
90 %
V
= 50 V
handbook, halfpage
DD
10 %
90 %
10 V
0 V
OUTPUT
I
D
10 %
50 Ω
t
t
off
MSA631
on
MBB692
VDD = 50 V.
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
2001 May 18
4
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSS87
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
3
E
L
H
E
1
2
3
c
b
2
w
M
b
1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
L
min.
UNIT
A
b
b
b
c
D
E
e
e
H
E
w
1
2
3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
4.25
3.75
mm
3.0
1.5
0.8
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT89
TO-243
SC-62
2001 May 18
5
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSS87
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 May 18
6
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSS87
NOTES
2001 May 18
7
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Pakistan: see Singapore
Belgium: see The Netherlands
Brazil: see South America
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Colombia: see South America
Czech Republic: see Austria
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 7 - 9 Rue du Mont Valérien, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4728 6600, Fax. +33 1 4728 6638
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: Philips Hungary Ltd., H-1119 Budapest, Fehervari ut 84/A,
Tel: +36 1 382 1700, Fax: +36 1 382 1800
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. +66 2 361 7910, Fax. +66 2 398 3447
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
Tel. +39 039 203 6838, Fax +39 039 203 6800
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
Middle East: see Italy
For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
72
SCA
© Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613510/03/pp8
Date of release: 2001 May 18
Document order number: 9397 750 08278
相关型号：
BSS87E6327
Small Signal Field-Effect Transistor, 0.29A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
BSS87L6327
Small Signal Field-Effect Transistor, 0.26A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
INFINEON
BSS87T/R
TRANSISTOR 400 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243, PLASTIC, SMD, SC-62, 3 PIN, FET General Purpose Small Signal
NXP
BSS87TRL
TRANSISTOR 400 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243, PLASTIC, SC-62, 3 PIN, FET General Purpose Small Signal
NXP
BSS87TRL13
TRANSISTOR 400 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243, PLASTIC, SC-62, 3 PIN, FET General Purpose Small Signal
NXP
BSS88E6288
Small Signal Field-Effect Transistor, 0.25A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN
INFINEON
BSS88E6296
Small Signal Field-Effect Transistor, 0.25A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明