BLY88A [NXP]
TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power;
| 型号： | BLY88A |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power 晶体 晶体管 放大器 |
| 文件： | 总11页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLY88C
VHF power transistor
August 1986
Product specification
Philips Semiconductors
Product specification
VHF power transistor
BLY88C
It has a 3/8" capstan envelope with a
ceramic cap. All leads are isolated
from the stud.
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit
MODE OF OPERATION
VCE
V
f
PL
W
Gp
dB
η
%
zi
Ω
YL
mS
MHz
c.w.
c.w.
13,5
12,5
175
175
15
15
>
8,0
>
60
2,3 + j2,2
130 − j4,4
typ. 7,5 typ. 67
−
−
PIN CONFIGURATION
PINNING - SOT120
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
halfpage
4
c
1
3
emitter
handbook, halfpage
b
e
MBB012
2
MSB056
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLY88C
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
VCESM
VCEO
VEBO
IC(AV)
ICM
max.
36 V
18 V
4 V
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
max.
max.
max.
max.
max.
3 A
Collector current (peak value); f > 1 MHz
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Storage temperature
8 A
Prf
36 W
Tstg
−65 to +150 °C
max. 200 °C
Operating junction temperature
Tj
MGP843
MGP844
3.5
60
handbook, halfpage
handbook, halfpage
P
rf
I
C
(W)
(A)
2.5
40
ΙΙΙ
ΙΙ
T
= 25 °C
T
= 70 °C
mb
h
derate by 0.2 W/K
0.16 W/K
1.5
20
Ι
0.5
0
0
0
10
20
50
100
T
(°C)
V
(V)
h
CE
I
Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.3 R.F. power dissipation; VCE ≤ 16,5 V;
f > 1 MHz.
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 15 W; Tmb = 77 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
Rth j-mb(dc)
Rth j-mb(rf)
Rth mb-h
= 6,55 K/W
= 4,95 K/W
= 0,45 K/W
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLY88C
CHARACTERISTICS
Tj = 25 °C
Collector-emitter breakdown voltage
V
BE = 0; IC = 10 mA
V(BR)CES
V(BR)CEO
V(BR)EBO
ICES
>
>
>
<
36 V
18 V
4 V
Collector-emitter breakdown voltage
open base; IC = 50 mA
Emitter-base breakdown voltage
open collector; IE = 4 mA
Collector cut-off current
VBE = 0; VCE = 18 V
4 mA
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
ESBO
ESBR
>
>
2,5 mJ
2,5 mJ
RBE = 10 Ω
D.C. current gain(1)
typ.
10 to 100
40
IC = 1,5 A; VCE = 5 V
hFE
Collector-emitter saturation voltage(1)
IC = 4,5 A; IB = 0,9 A
VCEsat
typ.
1,0 V
Transition frequency at f = 100 MHz(1)
−IE = 1,5 A; VCB = 13,5 V
fT
fT
typ.
typ.
850 MHz
800 MHz
−IE = 4,5 A; VCB = 13,5 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 13,5 V
Cc
typ.
32 pF
Feedback capacitance at f = 1 MHz
IC = 200 mA; VCE = 13,5 V
Cre
Ccs
typ.
typ.
23 pF
2 pF
Collector-stud capacitance
Note
1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02.
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLY88C
MGP846
MGP845
150
60
handbook, halfpage
handbook, halfpage
V
= 13.5 V
5 V
CE
C
c
(pF)
h
FE
40
100
50
20
typ
0
0
0
10
20
0
2.5
5
I
(A)
V
(V)
C
CB
Fig.4 Typical values; Tj = 25 °C.
Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
MGP847
1000
V
= 13.5 V
CB
f
T
10 V
(MHz)
500
0
0
2
4
6
−I (A)
E
Fig.6 Typical values; f = 100 MHz; Tj = 25 °C.
August 1986
5
Philips Semiconductors
Product specification
VHF power transistor
BLY88C
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit)
Th = 25 °C
f (MHz)
VCE (V)
PL (W)
PS (W)
Gp (dB)
IC (A)
η (%)
zi (Ω)
YL (mS)
175
175
13,5
12,5
15
15
< 2,4
>
8,0
< 1,85 >
60 2,3 + j2,2
130 − j4,4
−
typ. 7,5
−
typ. 67
−
−
C6
L4
L7
50 Ω
T.U.T.
C1
L3
L1
50 Ω
C7
L5
C4
L2
C3
C2
C5
R1
L6
+V
MGP253
CC
Fig.7 Test circuit; c.w. class-B.
List of components:
C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = C6 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3 = 47 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor (500 V)
C5 = 100 nF polyester capacitor
C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
L1 = 2 turns Cu wire (1,6 mm); int. dia. 4,5 mm; length 5,7 mm; leads 2 × 5 mm
L2 = L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = L4 = strip (12 mm × 6 mm); tap for C3 at 5 mm from transistor
L5 = 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 7,5 mm; leads 2 × 5 mm
L7 = 3 turns Cu wire (1,6 mm); int. dia. 6,5 mm; length 7,4 mm; leads 2 × 5 mm
L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric,
thickness 1/16".
R1 = 10 Ω carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit see Fig.8.
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLY88C
150
72
1888MJK
L6
+V
CC
C4
C5
R1
L5
L1
C1
C2
C6
L4
L3
C7
L7
L2
C3
1888MJK
rivet
MGP836
Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLY88C
MGP848
MGP849
25
10
handbook, halfpage
handbook, halfpage
G
p
T
= 25 °C
70 °C
P
h
L
(W)
T
= 25 °C
70 °C
h
20
15
10
5
G
p
(dB)
100
5
T
= 25 °C
70 °C
h
η
η
(%)
0
0
5
0
20
0
2.5
5
7.5
10
15
P
(W)
P
(W)
S
L
Fig.9 Typical values; f = 175 MHz;
VCE = 13,5 V;
Fig.10 Typical values; f = 175 MHz;
VCE = 13,5 V;
− − − − VCE = 12,5 V.
− − − − VCE = 12,5 V.
Note to Fig.11:
MGP850
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
17
P
handbook, halfpage
Lnom
(W)
(VSWR = 1)
16
VSWR =
4.5
5
15
14
13
10
20
The graph applies to the situation in which the drive
(PS/PSnom) increases linearly with supply over-voltage
ratio.
P
S
50
P
Snom
12
1
V
1.1
1.2
1.3
CE
V
CEnom
Fig.11 R.F. SOAR (short-time operation during
mismatch); f = 175 MHz; Th = 70 °C;
Rth mb-h = 0,45 K/W;
VCEnom = 13,5 V or 12,5 V;
PS = PSnom at VCEnom and VSWR = 1.
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
BLY88C
MGP852
MGP851
5
25
5
C
handbook, halfpage
handbook, halfpage
R
L
L
r , x
i
i
(Ω)
(pF)
0
x
r
(Ω)
r
i
i
20
2.5
C
L
i
15
10
5
−5
0
−2.5
−5
R
L
−10
−15
−20
R
L
x
i
C
L
0
0
0
100
200
300
100
200
300
f (MHz)
f (MHz)
Typical values: VCE = 13,5 V;
Typical values: VCE = 13,5 V;
PL = 15 W; Th = 25 °C.
PL = 15 W; Th = 25 °C.
Fig.12 Input impedance (series components).
Fig.13 Load impedance (parallel components).
OPERATING NOTE
Below 50 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.
MGP853
25
handbook, halfpage
G
p
(dB)
20
15
10
5
0
0
100
200
300
f (MHz)
Typical values: VCE = 13,5 V;
PL = 15 W; Th = 25 °C.
Fig.14
August 1986
9
Philips Semiconductors
Product specification
VHF power transistor
BLY88C
PACKAGE OUTLINE
Studded ceramic package; 4 leads
SOT120A
D
A
Q
c
A
D
1
N
1
w
M
M
A
W
D
1
N
2
N
3
M
1
X
H
detail X
b
4
L
3
H
1
2
0
5
scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
D
H
L
M
M
N
N
N
3
Q
W
w
1
UNIT
mm
1
2
1
1
5.90
5.48
8.39
8.12
5.97
4.74
9.73
9.47
9.66 27.44 9.00
9.39 25.78 8.00
3.41
2.92
1.66 12.83 1.60
1.39 11.17 0.00
3.31
2.54
4.35
3.98
0.18
0.14
0.38
8-32
UNC
1.080
1.015
0.232
0.216
0.330
0.320
0.283
0.248
0.383
0.373
0.380
0.370
0.354 0.134
0.315 0.115
0.505
0.440
0.130 0.171
0.100 0.157
0.007
0.004
0.065
0.055
0.063
0.000
inches
0.015
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-06-28
SOT120A
August 1986
10
Philips Semiconductors
Product specification
VHF power transistor
BLY88C
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
11
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