BLW32 [NXP]
UHF linear power transistor; UHF线性功率晶体管
| 型号： | BLW32 |
| 厂家： | 
NXP |
| 描述： | UHF linear power transistor |
| 文件： | 总12页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLW32
UHF linear power transistor
August 1986
Product specification
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
area. The combination of optimum
DESCRIPTION
thermal design and the application of
gold sandwich metallization
realizes excellent reliability
properties.
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers for television
transmitters and transposers. The
excellent d.c. dissipation
The transistor has a 1⁄4" capstan
envelope with ceramic cap.
properties for class-A operation are
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal
QUICK REFERENCE DATA
R.F. performance
(1)
(1)
MODE OF OPERATION
fvision
MHz
VCE
V
IC
mA
Th
°C
dim
dB
Po sync
Gp
dB
W
class-A; linear amplifier
860
860
25
25
150
150
70
25
−60
−60
>
0,5 >
11
typ.
0,63 typ. 12,2
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
PIN CONFIGURATION
PINNING - SOT122A.
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
4
handbook, halfpage
emitter
1
3
2
Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); VBE = 0
VCESM
VCEO
VEBO
max.
50 V
30 V
4 V
open base
max.
max.
Emitter-base voltage (open collector)
Collector current
d.c. or average
IC
max.
max.
max.
650 mA
1000 mA
10,8 W
(peak value); f > 1 MHz
Total power dissipation up to Tmb = 25 °C
Storage temperature
ICM
Ptot
Tstg
Tj
−65 to +150 °C
max. 200 °C
Operating junction temperature
MGP430
MGP429
1
15
handbook, halfpage
handbook, halfpage
P
tot
(W)
T
= 25 °C
I
mb
(1)
C
T
= 70 °C
h
(A)
10
5
−1
0
0
10
2
50
100
1
10
10
T
(°C)
V
(V)
h
CE
(1) Second breakdown limit (independent of temperature).
Fig.2 D.C. SOAR.
Fig.3 Power derating curve vs. temperature.
THERMAL RESISTANCE (see Fig.4)
From junction to mounting base
(dissipation = 3,75 W; Tmb = 72,3 °C; i.e. Th = 70 °C)
Rth j-mb
Rth mb-h
=
=
15,0 K/W
0,6 K/W
From mounting base to heatsink
August 1986
3
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
MGP431
20
T
= 125 °C
100 °C
75 °C
50 °C
25 °C
h
R
th j-h
(K/W)
0 °C
T = 200 °C
j
175 °C
150 °C
15
125 °C
100 °C
75 °C
10
0
5
10
15
P
(W)
tot
Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink
and junction temperature as parameters. (Rth mb-h = 0,6 K/W.)
Example
Nominal class-A operation: VCE = 25 V; IC = 150 mA; Th = 70 °C.
Fig.4 shows:
Rth j-h
Tj
max.
max.
typ.
15,6 K/W
130 °C
Typical device: Rth j-h
Tj
13,5 K/W
120 °C
typ.
August 1986
4
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-emitter breakdown voltage
V
BE = 0; IC = 2 mA
V(BR)CES
V(BR)CEO
>
>
50 V
30 V
open base; IC = 15 mA
Emitter-base breakdown voltage
open collector; IE = 1 mA
Collector cut-off current
VBE = 0; VCE = 30 V
V(BR)EBO
>
4 V
ICES
ICES
<
<
0,5 mA
1,2 mA
VBE = 0; VCE = 30 V; Tj = 175 °C
D.C. current gain (1)
>
typ.
20
40
IC = 150 mA; VCE = 25 V
hFE
IC = 150 mA; VCE = 25 V; Tj = 175 °C
Collector-emitter saturation voltage (1)
IC = 300 mA; IB = 30 mA
hFE
<
120
VCEsat
typ. 500 mV
Transition frequency at f = 500 MHz (2)
−IE = 150 mA; VCB = 25 V
fT
fT
typ.
typ.
3,5 GHz
3,4 GHz
−IE = 300 mA; VCB = 25 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 25 V
Cc
typ.
3,7 pF
Feedback capacitance at f = 1 MHz
IC = 10 mA; VCE = 25 V
Cre
Ccs
typ.
typ.
1,9 pF
1,2 pF
Collector-stud capacitance
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.
August 1986
5
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
MGP432
MGP433
50
10
handbook, halfpage
handbook, halfpage
V
= 25 V
CE
C
c
(pF)
h
FE
25
5
typ
5 V
0
0
0
0
250
500
750
10
20
30
I
(mA)
V
(V)
CB
C
Fig.5 Typical values; Tj = 25 °C.
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
MGP434
4
typ
f
T
(GHz)
3
2
1
0
0
250
500
750
−I (mA)
E
Fig.7 VCB = 25 V; f = 500 MHz; Tj = 25 °C.
August 1986
6
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
APPLICATION INFORMATION
fvision (MHz)
VCE (V)
IC (mA)
Th (°C)
dim(dB) (1)
Po sync (W) (1)
Gp (dB)
860
860
860
25
25
25
150
150
150
70
70
25
−60
−60
−60
>
0,5
>
11
typ.
typ.
0,58
0,63
typ. 12,2
typ. 12,2
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
T.U.T.
C5
C7
C1
C3
L1
L2
L3
L6
L7
50 Ω
50 Ω
L5
C2
L4
C4
C8
C6
C9
C10
C11
C12
C13
C14
C15
+V
+V
MGP435
CC
BB
Fig.8 Test circuit at fvision = 860 MHz.
List of components:
C1 = C7 = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 05003)
C2 = C6 = C8 = 1 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) placed 24 mm, 17 mm
and 45 mm respectively from transistor edge
C3 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002)
C4 = C5 = 3 pF multilayer chip capacitor (ATC 100A-3RO-C-PX-50)
C9 = C12 = 1 nF chip capacitor
C10 = 100 nF polyester capacitor
C11 = C13 = 470 nF polyester capacitor
C14 = 10 nF polyester capacitor
C15 = 3,3 µF/40 V solid aluminium electrolytic capacitor
L1 = stripline (5,0 mm × 4,5 mm)
L2 = stripline (13,2 mm × 4,5 mm)
L3 = stripline (15,0 mm × 4,5 mm)
L4 = micro choke 0,47 µH (cat. no. 4322 057 04770)
L5 = 4 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2 × 4 mm
L6 = stripline (37,0 mm × 4,5 mm)
L7 = stripline (13,5 mm × 4,5 mm)
August 1986
7
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
L1; L2; L3; L6 and L7 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 2,74);
thickness 1/16".
Component layout and printed-circuit board for 860 MHz test circuit are shown in Fig.9. For bias circuit see Fig.10.
114.5
46
C11
C10
C9
C13
+V
CC
C15 +
+V
BB
C14
L4
C12
C4
L5
L2
L7
L6
L1
L3
C3
C1
C7
C5
C2
C6
C8
MGP436
Fig.9 Component layout and printed-circuit board for 860 MHz test circuit.
The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
August 1986
8
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
List of components:
+V
+V
+V
s
C1 = 100 pF ceramic capacitor
D2
R1
R6
C4
C2 = C3 = 100 nF polyester capacitor
C4 = 10 µF/25 V solid aluminium
electrolytic capacitor
CC
BB
D1
R1 = 150 Ω carbon resistor (0,25 W)
R2 = 100 Ω preset potentiometer (0,1 W)
R3 = 82 Ω carbon resistor (0,25 W)
R4 = R5 = 2,2 kΩ carbon resistor (0,25 W)
R6 = 12 Ω carbon resistor (0,5 W)
R7 = R8 = 820 Ω carbon resistor (0,25 W)
R9 = 33 Ω carbon resistor (0,25 W)
TR1
R2
R3
R7
R8
C1
C2
C3
R9
R4
R5
0
D1
D2
= BZY88-C3V3
= BY206
MGP437
Fig.10 Bias circuit for class-A amplifier at
fvision = 860 MHz.
TR1 = BD136
MGP438
−50
30
d
d
im
(dB)
cm
(%)
d
im
−55
20
−60
10
d
cm
−65
0
0
0.5
1
1.5
2
P
(W)
o sync
Fig.11 Intermodulation distortion (dim)(1.) and cross-modulation distortion (dcm (2.) as a function of output power.
)
Typical values; VCE = 25 V; IC = 150 mA; fvision = 860 MHz; − − − Th = 25 °C;
Th = 70 °C.
Information for wideband application from 470 to 860 MHz available on request.
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
Intermodulation distortion of input signal ≤ −75 dB.
2. Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from
0 dB to −20 dB.
August 1986
9
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
MGP440
MGP439
100
10
handbook, halfpage
handbook, halfpage
R
L
r , x
r
i
R , X
i
i
L
L
(Ω)
(Ω)
75
0
x
i
50
25
0
−10
−20
−30
X
L
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
Typical values; VCE = 25 V;
Typical values; VCE = 25 V;
IC = 150 mA; Th = 70 °C
IC = 150 mA; Th = 70 °C
Fig.12 Input impedance (series components).
Fig.13 Load impedance (series components).
Ruggedness
The BLW32 is capable of withstanding a load mismatch
(VSWR = 50 through all phases) under the following
conditions:
MGP441
35
handbook, halfpage
f = 860 MHz; VCE = 25 V; IC = 150 mA;
G
p
Th = 70 °C and PL = 1 W.
(dB)
25
15
5
10
2
3
10
10
f (MHz)
Typical values; VCE = 25 V;
IC = 150 mA; Th = 70 °C
Fig.14
August 1986
10
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
PACKAGE OUTLINE
Studded ceramic package; 4 leads
SOT122A
D
ceramic
BeO
A
metal
Q
c
N
1
A
D
1
w
D
M
A
1
M
2
W
N
N
3
M
1
X
detail X
H
b
α
4
L
3
H
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
L
N
1
UNIT
A
b
c
D
D
D
H
M
M
N
N
Q
W
w
1
α
1
2
1
3
max.
8-32
UNC
5.97
4.74
5.85
5.58
0.18
0.14
7.50
7.23
6.48
6.22
7.24 27.56 9.91
6.93 25.78 9.14
3.18
2.66
1.66
1.39
11.82
11.04
3.86
2.92
3.38
2.74
mm
0.381
90°
1.02
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-04-18
SOT122A
August 1986
11
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
12
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