BLW33 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | BLW33 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：17K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLW33
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW33 is Designed for
Television, Transmitters, and
transposers Applications up to 860
MHz.
PACKAGE STYLE .280 4L STUD
A
45°
FEATURES:
C
• Common Emitter
E
E
B
• PG = 10 dB at 1.0 W/ 860 MHz
B
• Omnigold™ Metalization System
C
D
J
E
I
MAXIMUM RATINGS
F
G
1.25 A
50 V
IC
H
K
#8-32 UNC
VCES
VCEO
VEBO
PDISS
TJ
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
1.055 / 26.80
.230 /5.84
A
B
C
D
E
F
G
H
I
30 V
.285 / 7.24
.007 / 0.18
.137 / 3.48
4.0 V
.572 / 14.53
.130 / 3.30
19.4 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
9.0 °C/W
.245 / 6.22
.255 / 6.48
.640 / 16.26
.175 / 4.45
.275 / 6.99
.217 / 5.51
.285 / 7.24
J
TSTG
θJC
K
ORDER CODE: ASI10500
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCES
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 4.0 mA
IC = 30 mA
IE = 2.0 mA
VCE = 30 V
VCE = 25 V
50
V
30
BVCEO
BVEBO
ICES
V
4.0
V
2.5
mA
---
IC = 300 mA
IC = 300 mA
20
40
120
hFE
VCE = 25 V
f = 860 MHz
10
PG
dB
POUT = 1.0 W
-60
IMD1
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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