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BLF888 [NXP]

UHF power LDMOS transistor; UHF功率LDMOS晶体管
BLF888
型号： BLF888
厂家： NXP    NXP
描述：

UHF power LDMOS transistor
UHF功率LDMOS晶体管

晶体 晶体管
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中文：  中文翻译
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BLF888  
UHF power LDMOS transistor  
Rev. 04 — 29 April 2010  
Product data sheet  
1. Product profile  
1.1 General description  
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial  
applications. The transistor is optimized for digital applications and can deliver 110 W  
average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The  
excellent ruggedness of this device makes it ideal for digital transmitter applications.  
Table 1.  
Application information  
RF performance at VDS = 50 V in a common source 860 MHz narrowband test circuit unless  
otherwise specified.  
Mode of operation  
f
PL(PEP) PL(AV) Gp  
D  
IMD3 IMDshldr  
(dBc) (dBc)  
(MHz)  
(W)  
500  
-
(W)  
250  
110  
(dB) (%)  
2-Tone, class AB  
DVB-T (8k OFDM)  
f1 = 860; f2 = 860.1  
858  
19  
19  
46  
31  
32  
-
-
31 [1]  
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features and benefits  
2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent  
drain current IDq = 1.3 A:  
Peak envelope power load power = 500 W  
Power gain = 19 dB  
Drain efficiency = 46 %  
Third order intermodulation distortion = 32 dBc  
DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent  
drain current IDq = 1.3 A:  
Average output power = 110 W  
Power gain = 19 dB  
Drain efficiency = 31 %  
Shoulder distance = 31 dBc (4.3 MHz from center frequency)  
Integrated ESD protection  
Advanced flange material for optimum thermal behavior and reliability  
BLF888  
NXP Semiconductors  
UHF power LDMOS transistor  
Excellent ruggedness  
High power gain  
High efficiency  
Designed for broadband operation (470 MHz to 860 MHz)  
Excellent reliability  
Internal input matching for high gain and optimum broadband operation  
Easy power control  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
Communication transmitter applications in the UHF band  
Industrial applications in the UHF band  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
drain1  
Simplified outline  
Graphic symbol  
1
2
1
2
drain2  
5
3
gate1  
3
5
4
4
gate2  
3
4
[1]  
5
source  
2
sym117  
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Type number Package  
Name Description  
flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A  
Ordering information  
Version  
BLF888  
-
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
-
Max  
104  
+11  
Unit  
V
drain-source voltage  
gate-source voltage  
storage temperature  
junction temperature  
VGS  
Tstg  
0.5  
65  
-
V
+150  
200  
C  
C  
Tj  
BLF888_4  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 29 April 2010  
2 of 17  
BLF888  
NXP Semiconductors  
UHF power LDMOS transistor  
5. Thermal characteristics  
Table 5.  
Symbol  
Rth(j-c)  
Thermal characteristics  
Parameter  
Conditions  
Tcase = 80 C; PL(AV) = 110 W  
Typ Unit  
[1]  
thermal resistance from junction to case  
0.24 K/W  
[1] Rth(j-c) is measured under RF conditions.  
6. Characteristics  
Table 6.  
DC characteristics  
Tj = 25 C unless otherwise specified.  
Symbol  
V(BR)DSS  
VGS(th)  
IDSS  
Parameter  
Conditions  
Min  
Typ  
-
Max Unit  
[1]  
[1]  
drain-source breakdown voltage  
gate-source threshold voltage  
drain leakage current  
VGS = 0 V; ID = 2.7 mA  
104  
-
V
VDS = 10 V; ID = 270 mA  
VGS = 0 V; VDS = 50 V  
1.4  
1.9  
-
2.4  
V
-
-
-
-
-
-
-
-
2.8  
A  
A
IDSX  
drain cut-off current  
VGS = VGS(th) + 3.75 V; VDS = 10 V  
VGS = 10 V; VDS = 0 V  
43  
-
-
IGSS  
gate leakage current  
280  
nA  
S
[1]  
[1]  
[2]  
[2]  
[2]  
gfs  
forward transconductance  
drain-source on-state resistance  
input capacitance  
VGS = 10 V; ID = 13.5 A  
17  
105  
205  
65  
2.2  
-
-
-
-
-
RDS(on)  
Ciss  
VGS = VGS(th) + 3.75 V; ID = 9.5 A  
VGS = 0 V; VDS = 50 V; f = 1 MHz  
VGS = 0 V; VDS = 50 V; f = 1 MHz  
VGS = 0 V; VDS = 50 V; f = 1 MHz  
m  
pF  
pF  
pF  
Coss  
output capacitance  
Crss  
reverse transfer capacitance  
[1] ID is the drain current.  
[2] Capacitance values without internal matching.  
Table 7.  
RF characteristics  
Th = 25 C unless otherwise specified.  
Symbol Parameter  
2-Tone, class AB  
Conditions  
Min  
Typ  
Max Unit  
VDS  
drain-source voltage  
-
50  
1.3  
-
-
V
IDq  
quiescent drain current  
peak envelope power load power  
average output power  
power gain  
total device  
-
-
A
PL(PEP)  
PL(AV)  
Gp  
500  
250  
18  
42  
-
-
W
W
dB  
%
-
-
19  
46  
32  
-
D  
drain efficiency  
-
IMD3  
third-order intermodulation distortion  
28  
dBc  
DVB-T (8k OFDM)  
VDS  
IDq  
drain-source voltage  
-
50  
1.3  
-
-
-
-
-
V
quiescent drain current  
average output power  
power gain  
total device  
-
A
PL(AV)  
Gp  
110  
18  
W
dB  
19  
BLF888_4  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 29 April 2010  
3 of 17  
BLF888  
NXP Semiconductors  
UHF power LDMOS transistor  
Table 7.  
RF characteristics …continued  
Th = 25 C unless otherwise specified.  
Symbol  
D  
Parameter  
Conditions  
Min  
Typ  
31  
Max Unit  
drain efficiency  
28  
-
-
%
[1]  
[2]  
IMDshldr  
PAR  
intermodulation distortion shoulder  
peak-to-average ratio  
31  
8.3  
28  
dBc  
dB  
-
-
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.  
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.  
001aaj274  
250  
C
oss  
(pF)  
200  
150  
100  
50  
0
20  
40  
60  
V
(V)  
DS  
VGS = 0 V; f = 1 MHz.  
Fig 1. Output capacitance as a function of drain-source voltage; typical values per  
section; capacitance value without internal matching  
6.1 Ruggedness in class-AB operation  
The BLF888 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1  
through all phases under the following conditions: VDS = 50 V; f = 860 MHz at rated  
power. Ruggedness is measured in the application circuit as described in Section 8.  
BLF888_4  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 29 April 2010  
4 of 17  
BLF888  
NXP Semiconductors  
UHF power LDMOS transistor  
7. Application information  
7.1 Narrowband RF figures  
7.1.1 2-Tone  
001aak641  
001aak642  
22  
60  
50  
40  
30  
20  
10  
0
22  
0
G
η
G
p
IMD3  
(dBc)  
p
D
(%)  
(dB)  
(dB)  
20  
20  
−10  
−20  
−30  
−40  
−50  
−60  
G
G
p
p
18  
16  
14  
12  
10  
18  
16  
14  
12  
10  
η
D
IMD3  
0
100  
200  
300  
400  
0
100  
200  
300  
400  
P
(W)  
P (W)  
L
L
VDS = 50 V; IDq = 1.3 A; measured in a common source  
narrowband 860 MHz test circuit.  
VDS = 50 V; IDq = 1.3 A; measured in a common source  
narrowband 860 MHz test circuit.  
Fig 2. 2-Tone power gain and drain efficiency as  
function of load power; typical values  
Fig 3. 2-Tone power gain and third order  
intermodulation distortion as function of  
load power; typical values  
BLF888_4  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 29 April 2010  
5 of 17  
BLF888  
NXP Semiconductors  
UHF power LDMOS transistor  
7.1.2 DVB-T  
001aak644  
001aak643  
12  
PAR  
(dB)  
10  
70  
22  
0
η
G
p
IMD  
shldr  
(dBc)  
D
(%)  
(dB)  
50  
20  
−10  
−20  
−30  
−40  
−50  
−60  
η
D
G
p
8
6
4
2
0
30  
18  
16  
14  
12  
10  
PAR  
10  
IMD  
shldr  
−10  
−30  
−50  
0
50  
100  
150  
200  
250  
300  
P
350  
(W)  
0
50  
100  
150  
200  
250  
300  
P
350  
(W)  
L
L
VDS = 50 V; IDq = 1.3 A; measured in a common source  
narrowband 860 MHz test circuit.  
VDS = 50 V; IDq = 1.3 A; measured in a common source  
narrowband 860 MHz test circuit.  
Fig 4. DVB-T power gain and intermodulation  
distortion shoulder as function of load power;  
typical values  
Fig 5. DVB-T peak-to-average ratio and drain  
efficiency as function of load power;  
typical values  
7.2 Broadband RF figures  
7.2.1 2-Tone  
001aak645  
001aak646  
24  
22  
20  
18  
16  
14  
12  
10  
8
60  
55  
50  
45  
40  
35  
30  
25  
20  
24  
−10  
−15  
−20  
−25  
−30  
−35  
−40  
−45  
−50  
G
(dB)  
η
G
p
(dB)  
IMD3  
(dBc)  
p
D
(%)  
22  
G
p
G
p
20  
18  
16  
14  
12  
10  
8
η
D
IMD3  
400  
500  
600  
700  
800  
900  
400  
500  
600  
700  
800  
900  
f (MHz)  
f (MHz)  
PL(AV) = 250 W; VDS = 50 V; IDq = 1.3 A; measured in a  
common source broadband test circuit as described in  
Section 8.  
PL(AV) = 250 W; VDS = 50 V; IDq = 1.3 A; measured in a  
common source broadband test circuit as described in  
Section 8.  
Fig 6. 2-Tone power gain and drain efficiency as  
function of frequency; typical values  
Fig 7. 2-Tone power gain and third order  
intermodulation distortion as function of  
frequency; typical values  
BLF888_4  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 29 April 2010  
6 of 17  
BLF888  
NXP Semiconductors  
UHF power LDMOS transistor  
7.2.2 DVB-T  
001aak647  
001aak648  
9.5  
50  
40  
30  
20  
10  
22  
−10  
G
p
PAR  
(dB)  
PAR  
8.5  
η
G
IMD  
shldr  
(dB)  
D
(%)  
p
(dB)  
18  
−20  
η
D
7.5  
6.5  
5.5  
14  
10  
6
−30  
IMD  
shldr  
−40  
−50  
400  
500  
600  
700  
800  
900  
400  
500  
600  
700  
800  
900  
f (MHz)  
f (MHz)  
PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a  
common source broadband test circuit as described in  
Section 8.  
PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a  
common source broadband test circuit as described in  
Section 8.  
Fig 8. DVB-T peak-to-average ratio and drain  
efficiency as function of frequency;  
typical values  
Fig 9. DVB-T power gain and intermodulation  
distortion shoulder as a function of frequency;  
typical values  
7.3 Impedance information  
Z
L
drain  
gate  
Z
i
001aai086  
Fig 10. Definition of transistor impedance  
Table 8.  
Typical push-pull impedance  
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(PEP) = 600 W (DVB-T).  
f
Zi  
ZL  
MHz  
300  
325  
350  
375  
400  
425  
450  
475  
500  
1.018 j1.350  
1.045 j1.022  
1.076 j0.722  
1.110 j0.444  
1.148 j0.183  
1.190 + j0.064  
1.238 + j0.299  
1.291 + j0.526  
1.351 + j0.746  
5.565 + j0.747  
5.435 + j0.752  
5.303 + j0.746  
5.167 + j0.730  
5.030 + j0.704  
4.892 + j0.668  
4.754 + j0.622  
4.617 + j0.567  
4.481 + j0.504  
BLF888_4  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 29 April 2010  
7 of 17  
BLF888  
NXP Semiconductors  
UHF power LDMOS transistor  
Table 8.  
Typical push-pull impedance …continued  
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(PEP) = 600 W (DVB-T).  
f
Zi  
ZL  
MHz  
525  
550  
575  
600  
625  
650  
675  
700  
725  
750  
775  
800  
825  
850  
875  
900  
925  
950  
975  
1000  
1.417 + j0.961  
1.492 + j1.171  
1.577 + j1.378  
1.672 + j1.582  
1.779 + j1.783  
1.901 + j1.983  
2.039 + j2.180  
2.196 + j2.373  
2.376 + j2.563  
2.581 + j2.745  
2.817 + j2.918  
3.087 + j3.076  
3.395 + j3.212  
3.746 + j3.317  
4.142 + j3.377  
4.583 + j3.374  
5.063 + j3.288  
5.566 + j3.094  
6.064 + j2.770  
6.514 + j2.299  
4.346 + j0.432  
4.214 + j0.353  
4.084 + j0.266  
3.958 + j0.173  
3.834 + j0.074  
3.713 j0.031  
3.596 j0.142  
3.482 j0.257  
3.372 j0.377  
3.266 j0.501  
3.163 j0.628  
3.064 j0.759  
2.968 j0.893  
2.876 j1.030  
2.787 j1.170  
2.701 j1.312  
2.619 j1.455  
2.540 j1.601  
2.464 j1.749  
2.391 j1.898  
BLF888_4  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 29 April 2010  
8 of 17  
BLF888  
NXP Semiconductors  
UHF power LDMOS transistor  
7.4 Reliability  
001aak649  
6
5
4
3
2
10  
Years  
(1)  
(2)  
(3)  
(4)  
(5)  
(6)  
10  
10  
10  
10  
(7)  
(8)  
(9)  
(10)  
(11)  
10  
1
0
4
8
12  
16  
20  
24  
I
(A)  
DS(DC)  
TTF (0.1 % failure fraction).  
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) 1 / .  
(1) Tj = 100 C  
(2) Tj = 110 C  
(3) Tj = 120 C  
(4) Tj = 130 C  
(5) Tj = 140 C  
(6) Tj = 150 C  
(7) Tj = 160 C  
(8) Tj = 170 C  
(9) Tj = 180 C  
(10) Tj = 190 C  
(11) Tj = 200 C  
Fig 11. BLF888 electromigration (IDS(DC), total device)  
8. Test information  
Table 9.  
List of components  
For test circuit, see Figure 12, Figure 13 and Figure 14.  
Component  
B1, B2  
Description  
Value  
Remarks  
semi rigid coax  
25 ; 49.5 mm  
12 pF  
EZ90-25-TP  
[1]  
[1]  
[2]  
[1]  
[2]  
[1]  
[2]  
C1  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
C2, C9, C10  
C3  
10 pF  
4.7 pF  
C4, C5, C6  
C7  
8.2 pF  
5.6 pF  
C8, C13, C14  
C11, C12  
100 pF  
2.0 pF  
BLF888_4  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 29 April 2010  
9 of 17  
BLF888  
NXP Semiconductors  
UHF power LDMOS transistor  
Table 9.  
List of components …continued  
For test circuit, see Figure 12, Figure 13 and Figure 14.  
Component  
Description  
Value  
Remarks  
C15, C16  
multilayer ceramic chip capacitor  
4.7 F, 50 V  
TDK C4532X7R1E475MT020U or  
capacitor of same quality.  
[2]  
C17, C18  
C19, C20  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
100 pF  
10 F, 50 V  
TDK C570X7R1H106KT000N or  
capacitor of same quality.  
C21, C22  
C30, C31  
C32  
electrolytic capacitor  
470 F; 63 V  
10 pF  
[3]  
[3]  
[3]  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
5.6 pF  
C33, C34, C35  
C36, C37  
100 pF  
4.7 F  
TDK C4532X7R1E475MT020U or  
capacitor of same quality.  
[4]  
[4]  
[4]  
[4]  
[4]  
[4]  
[4]  
[4]  
L1  
microstrip  
microstrip  
microstrip  
microstrip  
microstrip  
microstrip  
microstrip  
microstrip  
resistor  
-
(W L) 15 mm 13 mm  
(W L) 5 mm 26 mm  
(W L) 2 mm 49.5 mm  
(W L) 1.7 mm 3.5 mm  
(W L) 2 mm 9.5 mm  
(W L) 5 mm 13 mm  
(W L) 2 mm 11 mm  
(W L) 2 mm 3 mm  
L2  
-
L3, L32  
L4  
-
-
L5  
-
L30  
-
L31  
-
L33  
-
R1, R2  
R3, R4  
R5, R6  
R7, R8  
10   
5.6   
100   
1 k  
resistor  
resistor  
potentiometer  
[1] American technical ceramics type 180R or capacitor of same quality.  
[2] American technical ceramics type 100B or capacitor of same quality.  
[3] American technical ceramics type 100A or capacitor of same quality.  
[4] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.76 mm; Cu (top/bottom metallization);  
thickness copper plating = 35 m.  
BLF888_4  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 29 April 2010  
10 of 17  
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx  
xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x  
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx  
xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx  
+V  
G1(test)  
R7  
C19  
R1  
C17  
+V  
D1(test)  
R5  
R3  
C36  
L5  
C21  
L30  
C30  
C34  
C35  
C11  
C5  
C9  
C7  
C13  
C14  
C15  
C8  
L1  
L32  
B2  
L3  
B1  
L31  
50 Ω  
50 Ω  
C33  
C3  
C1  
L33  
L2  
L4  
C2  
C4  
C6  
C12  
C32 C31  
C16  
R4  
R6  
C10  
C22  
+V  
C37  
D2(test)  
R2  
C18  
C20  
R8  
001aak650  
+V  
G2(test)  
See Table 9 for a list of components.  
Fig 12. Class-AB common-source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages  
BLF888  
NXP Semiconductors  
UHF power LDMOS transistor  
L32  
L3  
L5  
L30  
L30  
L1  
L1  
L2  
L4  
L2  
50  
mm  
L31  
L31  
L33  
L5  
L32  
L3  
105 mm  
001aak651  
See Table 9 for a list of components.  
Fig 13. Printed-Circuit Board (PCB) for class-AB common source amplifier  
+V  
G1(test)  
+V  
D1(test)  
+
C17  
R1  
R7  
R5  
C36  
C21  
−
C19  
C11  
9 mm  
R3  
C15  
C13  
C14  
C9  
C7  
C1  
C3  
C5 C6  
C34  
C30  
C32  
C33  
50 Ω  
C8  
50  
Ω
C31  
C35  
C2  
C4  
19.5 mm  
C12  
C10  
C16  
C21  
2 mm  
R4  
31.5 mm  
C20  
C22  
−
C37  
R6  
R8  
R2  
C18  
+
6.5  
mm  
+V  
G2(test)  
+V  
D2(test)  
001aak652  
See Table 9 for a list of components.  
Fig 14. Component layout for class-AB common source amplifier  
BLF888_4  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 29 April 2010  
12 of 17  
BLF888  
NXP Semiconductors  
UHF power LDMOS transistor  
9. Package outline  
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads  
SOT979A  
D
A
F
D
U
1
1
1
B
C
q
H
c
w2  
w1  
C
A
B
1
2
p
U
2
H
E
E
1
5
L
3
4
A
b
w3  
Q
e
w
3
0.25  
0
5
10 mm  
scale  
0.010  
Dimensions  
(1)  
Unit  
A
b
c
D
D
E
E
e
F
H
H
1
L
p
Q
q
U
U
2
w
w
2
1
1
1
1
max 5.77 11.81 0.15 31.55 31.37 10.29 10.29  
mm nom  
1.969 17.50 25.53 3.86 3.30 3.02  
41.28 10.29  
13.72  
0.540  
35.56  
1.400  
0.25 0.51  
min 4.80 11.56 0.10 30.94 31.12 10.03 10.03  
1.689 17.25 25.27 3.35 3.05 2.77  
0.078 0.689 1.005 0.152 0.130 0.119  
41.02 10.03  
1.625 0.405  
max 0.227 0.465 0.006 1.242 1.235 0.405 0.405  
inches nom  
min 0.189 0.455 0.004 1.218 1.225 0.395 0.395  
0.010 0.020  
0.067 0.679 0.995 0.132 0.120 0.109  
1.615 0.395  
Note  
1. millimeter dimensions are derived from the original inch dimensions.  
sot979a_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
08-04-24  
08-09-04  
SOT979A  
Fig 15. Package outline SOT979A  
BLF888_4  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 29 April 2010  
13 of 17  
BLF888  
NXP Semiconductors  
UHF power LDMOS transistor  
10. Abbreviations  
Table 10. Abbreviations  
Acronym  
CCDF  
DVB  
Description  
Complementary Cumulative Distribution Function  
Digital Video Broadcast  
DVB-T  
LDMOS  
LDMOST  
OFDM  
PAR  
Digital Video Broadcast - Terrestrial  
Laterally Diffused Metal-Oxide Semiconductor  
Laterally Diffused Metal-Oxide Semiconductor Transistor  
Orthogonal Frequency Division Multiplexing  
Peak-to-Average power Ratio  
RF  
Radio Frequency  
TTF  
Time To Failure  
UHF  
Ultra High Frequency  
VSWR  
Voltage Standing-Wave Ratio  
11. Revision history  
Table 11. Revision history  
Document ID  
BLF888_4  
Release date  
20100429  
Data sheet status  
Change notice  
Supersedes  
Product data sheet  
-
BLF888_3  
Modifications:  
BLF888_3  
• Table 7 on page 3: a correction was made to the minimum value of PL(PEP)  
.
20100211  
20091022  
20081216  
Product data sheet  
Preliminary data sheet  
Objective data sheet  
-
-
-
BLF888_2  
BLF888_1  
-
BLF888_2  
BLF888_1  
BLF888_4  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 29 April 2010  
14 of 17  
BLF888  
NXP Semiconductors  
UHF power LDMOS transistor  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of an NXP Semiconductors product can reasonably be expected  
12.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on a weakness or default in the  
customer application/use or the application/use of customer’s third party  
customer(s) (hereinafter both referred to as “Application”). It is customer’s  
sole responsibility to check whether the NXP Semiconductors product is  
suitable and fit for the Application planned. Customer has to do all necessary  
testing for the Application in order to avoid a default of the Application and the  
product. NXP Semiconductors does not accept any liability in this respect.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
12.3 Disclaimers  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
non-automotive qualified products in automotive equipment or applications.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
BLF888_4  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 29 April 2010  
15 of 17  
BLF888  
NXP Semiconductors  
UHF power LDMOS transistor  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
12.4 Licenses  
ICs with DVB-T or DVB-T2 functionality  
Use of this product in any manner that complies with the DVB-T or the  
DVB-T2 standard may require licenses under applicable patents of the  
DVB-T respectively the DVB-T2 patent portfolio, which license is available  
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under  
applicable patents of other parties.  
12.5 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
13. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BLF888_4  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 29 April 2010  
16 of 17  
BLF888  
NXP Semiconductors  
UHF power LDMOS transistor  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Ruggedness in class-AB operation . . . . . . . . . 4  
3
4
5
6
6.1  
7
7.1  
Application information. . . . . . . . . . . . . . . . . . . 5  
Narrowband RF figures . . . . . . . . . . . . . . . . . . 5  
2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Broadband RF figures . . . . . . . . . . . . . . . . . . . 6  
2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Impedance information. . . . . . . . . . . . . . . . . . . 7  
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
7.1.1  
7.1.2  
7.2  
7.2.1  
7.2.2  
7.3  
7.4  
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14  
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
12.1  
12.2  
12.3  
12.4  
12.5  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . 16  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2010.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 29 April 2010  
Document identifier: BLF888_4  

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