BLF888BS,112 [ETC]
RF MOSFET LDMOS DUAL 50V SOT539B;
| 型号： | BLF888BS,112 |
| 厂家： | 
ETC |
| 描述： | RF MOSFET LDMOS DUAL 50V SOT539B 放大器 CD 晶体管 |
| 文件： | 总17页 (文件大小：1867K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF888B; BLF888BS
UHF power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1.
Application information
RF performance at VDS = 50 V unless otherwise specified.
Mode of operation
f
PL(AV) PL(M) Gp
D IMD3 IMDshldr PAR
(MHz)
(W) (W) (dB) (%) (dBc) (dBc)
(dB)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB
f1 = 860; f2 = 860.1 250
858 120
-
-
21
21
46 34
33
-
-
DVB-T (8k OFDM)
-
31[1]
8.2 [2]
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM) 858 120 20 32
32 [1]
-
-
8.0 [2]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Excellent ruggedness
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
BLF888B; BLF888BS
UHF power LDMOS transistor
2. Pinning information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLF888B (SOT539A)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
5
3
5
4
[1]
2
sym117
BLF888BS (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
5
3
5
4
[1]
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
BLF888B
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
SOT539A
BLF888BS
-
earless flanged balanced LDMOST ceramic
package; 4 leads
SOT539B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
-
Max
Unit
drain-source voltage
gate-source voltage
storage temperature
junction temperature
104
+11
V
VGS
Tstg
0.5
65
-
V
+150
200
C
C
Tj
BLF888B_BLF888BS#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 17
BLF888B; BLF888BS
UHF power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
[1]
Rth(j-c)
thermal resistance from junction to case Tcase = 80 C; PL(AV) = 125 W
0.15 K/W
[1] Rth(j-c) is measured under RF conditions.
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
[1]
[1]
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.4 mA
104 -
-
V
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 240 mA
VGS = 0 V; VDS = 50 V
1.4 1.9 2.4
-
-
-
2.8 A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
38
-
A
IGSS
gate leakage current
VGS = 10 V; VDS = 0 V
-
-
-
280 nA
[1]
[2]
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 8.5 A
120
-
-
-
m
pF
pF
pF
Ciss
Coss
Crss
input capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
-
-
210
67
output capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
reverse transfer capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
1.35 -
[1] ID is the drain current.
[2] Capacitance values without internal matching.
Table 7.
RF characteristics
RF characteristics in Ampleon production narrowband test circuit; Tcase = 25 C unless otherwise
specified.
Symbol Parameter
2-Tone, class-AB
Conditions
Min Typ Max Unit
VDS
IDq
drain-source voltage
-
50
1.3
-
-
-
-
V
[1]
quiescent drain current
average output power
-
A
PL(AV)
f1 = 860 MHz;
f2 = 860.1 MHz
250
W
Gp
power gain
f1 = 860 MHz;
f2 = 860.1 MHz
20
42
-
21
46
-
-
dB
%
D
drain efficiency
f1 = 860 MHz;
f2 = 860.1 MHz
IMD3
third-order intermodulation distortion
f1 = 860 MHz;
f2 = 860.1 MHz
34 30 dBc
BLF888B_BLF888BS#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 17
BLF888B; BLF888BS
UHF power LDMOS transistor
Table 7.
RF characteristics …continued
RF characteristics in Ampleon production narrowband test circuit; Tcase = 25 C unless otherwise
specified.
Symbol Parameter
Conditions
Min Typ Max Unit
DVB-T (8k OFDM), class-AB
VDS
IDq
drain-source voltage
quiescent drain current
average output power
power gain
-
50
1.3
-
-
-
-
-
-
V
[1]
-
A
PL(AV)
Gp
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
120
20
30
-
W
dB
%
21
33
D
drain efficiency
[2]
[3]
IMDshldr intermodulation distortion shoulder
PAR peak-to-average ratio
31 27 dBc
8.2 dB
-
-
[1] Idq for total device
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
001aao006
400
C
oss
(pF)
300
200
100
0
0
20
40
60
V
(V)
DS
VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance as a function of drain-source voltage; typical values per
section
BLF888B_BLF888BS#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 17
BLF888B; BLF888BS
UHF power LDMOS transistor
7. Application information
7.1 Narrowband RF figures
7.1.1 2-Tone
001aao018
001aao019
24
22
20
18
16
14
12
60
24
p
(dB)
22
0
G
η
D
G
IMD3
(dBc)
p
(dB)
(%)
50
-10
-20
-30
-40
-50
-60
G
G
p
p
40
30
20
10
0
20
18
16
14
12
η
D
IMD3
0
100
200
300
400
500
(W)
0
100
200
300
400
500
(W)
P
L(AV)
P
L(AV)
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 2. 2-Tone power gain and drain efficiency as
function of load power; typical values
Fig 3. 2-Tone power gain and third order
intermodulation distortion as load power;
typical values
BLF888B_BLF888BS#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 17
BLF888B; BLF888BS
UHF power LDMOS transistor
7.1.2 DVB-T
001aao020
001aao021
24
p
(dB)
22
0
12
PAR
(dB)
10
60
G
IMD
η
shldr
D
(dBc)
(%)
50
40
30
20
10
0
-10
-20
-30
-40
-50
-60
PAR
G
p
20
18
16
14
12
8
6
4
2
0
η
D
IMD
shldr
0
100
200
300
400
(W)
0
100
200
300
400
(W)
P
P
L(AV)
L(AV)
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 4. DVB-T power gain and intermodulation
distortion shoulder as function of load power;
typical values
Fig 5. DVB-T peak-to-average ratio and drain
efficiency as function of load power;
typical values
7.2 Broadband RF figures
7.2.1 DVB-T
001aao022
001aao023
24
-10
9.5
50
G
IMD
PAR
(dB)
η
D
(%)
p
shldr
(dB)
(dBc)
G
p
20
-20
-30
-40
-50
8.5
40
PAR
η
D
16
12
8
7.5
6.5
5.5
30
20
10
IMD
shldr
400
500
600
700
800
900
400
500
600
700
800
900
f (MHz)
f (MHz)
PL(AV =120 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
PL(AV =120 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
Fig 6. DVB-T power gain and intermodulation
distortion shoulder as function of frequency;
typical values
Fig 7. DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
BLF888B_BLF888BS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
6 of 17
BLF888B; BLF888BS
UHF power LDMOS transistor
7.3 Impedance information
drain 1
gate 1
Z
Z
L
i
gate 2
drain 2
001aan207
Fig 8. Definition of transistor impedance
Table 8.
Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(AV) = 120 W (DVB-T).
f
Zi
ZL
MHz
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
0.617 j1.715
0.635 j1.355
0.655 j1.026
0.677 j0.721
0.702 j0.435
0.731 j0.164
0.762 + j0.096
0.798 + j0.347
0.839 + j0.592
0.884 + j0.833
0.936 + j1.072
0.995 + j1.310
1.063 + j1.549
1.141 + j1.791
1.230 + j2.037
1.334 + j2.289
1.456 + j2.548
1.599 + j2.814
1.768 + j3.090
1.971 + j3.376
2.214 + j3.671
2.510 + j3.975
2.873 + j4.282
3.320 + j4.584
3.875 + j4.865
4.562 + j5.095
5.409 + j5.223
6.426 + j5.166
7.587 + j4.807
4.792 + j0.947
4.707 + j0.994
4.619 + j1.035
4.528 + j1.069
4.435 + j1.097
4.340 + j1.118
4.243 + j1.134
4.147 + j1.143
4.049 + j1.146
3.952 + j1.144
3.855 + j1.136
3.759 + j1.123
3.663 + j1.105
3.569 + j1.083
3.477 + j1.055
3.385 + j1.024
3.296 + j0.989
3.209 + j0.949
3.123 + j0.907
3.039 + j0.861
2.958 + j0.812
2.879 + j0.761
2.801 + j0.706
2.726 + j0.650
2.654 + j0.591
2.583 + j0.530
2.514 + j0.467
2.448 + j0.403
2.384 + j0.337
BLF888B_BLF888BS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
7 of 17
BLF888B; BLF888BS
UHF power LDMOS transistor
7.4 Reliability
001aao024
7
10
Years
6
10
(1)
(2)
(3)
(4)
(5)
(6)
5
10
4
10
3
10
(7)
(8)
2
10
(9)
(10)
(11)
10
1
0
2
4
6
8
10
12
14
16
18
20
(A)
I
DS(DC)
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) 1 / .
(1) Tj = 100 C
(2) Tj = 110 C
(3) Tj = 120 C
(4) Tj = 130 C
(5) Tj = 140 C
(6) Tj = 150 C
(7) Tj = 160 C
(8) Tj = 170 C
(9) Tj = 180 C
(10) Tj = 190 C
(11) Tj = 200 C
Fig 9. BLF888B; BLF888BS electromigration (IDS(DC), total device)
BLF888B_BLF888BS#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
8 of 17
BLF888B; BLF888BS
UHF power LDMOS transistor
8. Test information
Table 9.
List of components
For test circuit, see Figure 10, Figure 11 and Figure 12.
Component
B1, B2
C1
Description
Value
Remarks
semi rigid coax
25 ; 49.5 mm
12 pF
UT-090C-25 (EZ 90-25)
[1]
[1]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
C2, C3, C4, C5,
C6
8.2 pF
[2]
[2]
[2]
[3]
[2]
C7
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
6.8 pF
C8
2.7 pF
C9
2.2 pF
C10, C13, C14
C11, C12
C15, C16
100 pF
10 pF
4.7 F, 50 V
Kemet C1210X475K5RAC-TU or
capacitor of same quality.
[2]
C17, C18, C23,
C24
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
100 pF
C19, C20
10 F, 50 V
TDK C570X7R1H106KT000N or
capacitor of same quality.
C21, C22
C30
electrolytic capacitor
470 F; 63 V
10 pF
[4]
[4]
[4]
[4]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
C31
9.1 pF
C32
3.9 pF
C33, C34, C35
C36, C37
100 pF
4.7 F, 50 V
TDK C4532X7R1E475MT020U or
capacitor of same quality.
[5]
[5]
[5]
[5]
[5]
[5]
[5]
[5]
L1
microstrip
-
(W L) 15 mm 13 mm
(W L) 5 mm 26 mm
(W L) 2 mm 49.5 mm
(W L) 1.7 mm 3.5 mm
(W L) 2 mm 9.5 mm
(W L) 5 mm 13 mm
(W L) 2 mm 11 mm
(W L) 2 mm 3 mm
L2
microstrip
-
L3, L32
L4
microstrip
-
microstrip
-
L5
microstrip
-
L30
microstrip
-
L31
microstrip
-
L33
microstrip
-
R1, R2
R3, R4
R5, R6
R7, R8
wire resistor
SMD resistor
wire resistor
potentiometer
10
5.6
100
10 k
0805
[1] American technical ceramics type 800R or capacitor of same quality.
[2] American technical ceramics type 800B or capacitor of same quality.
[3] American technical ceramics type 180R or capacitor of same quality.
[4] American technical ceramics type 100A or capacitor of same quality.
[5] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.762 mm; Cu (top/bottom metallization);
thickness copper plating = 35 m.
BLF888B_BLF888BS#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
9 of 17
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+V
G1(test)
R7
C19
R1
C17
L5
R5
R3
+V
D1(test)
C36
C21
C23
C11
C13
C14
C15
C34
C35
L30
C30
L32
B2
L3
B1
L1
C3
L31
C32
L2
C1
C5
C4
C8
50 Ω
C33
C10
50 Ω
L33
L4
C31
C2
C6 C7
C9
C16
R4
R6
C12
C37
C22
C24
+V
D2(test)
001aao025
C18
R2
C20
R8
+V
G2(test)
See Table 9 for a list of components.
Fig 10. Class-AB common source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages
BLF888B; BLF888BS
UHF power LDMOS transistor
L3
L32
L5
L30
L1
L1
L2
L4
L2
L31
L31
50 mm
L33
L30
L5
L32
L3
105 mm
001aao026
See Table 9 for a list of components.
Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier
49.6 mm
44 mm
+V
G1(test)
+V
D1(test)
+
-
R1
C17
R5
C23
R7
C19
C36
C21
C11
R3
C15
C10
C13
C34
C35
C7 C9
C30
C31
C1
C3
C5
C32
C33
50 Ω
50 Ω
C2
C4
C6
C14
C8
C12
4 mm
C16
R4
C22
-
C24
C37
C20
R2
R6
R8
C18
+
+V
G2(test)
+V
D2(test)
6.3 mm
24.3 mm
27 mm
36.8 mm
001aao027
See Table 9 for a list of components.
Fig 12. Component layout for class-AB common source amplifier
BLF888B_BLF888BS#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
11 of 17
BLF888B; BLF888BS
UHF power LDMOS transistor
9. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D
1
U
1
B
q
C
w
H
1
M
M
C
2
c
1
2
4
E
p
E
H
U
1
2
5
w
M
M
M
B
A
1
L
3
A
w
b
M
3
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
e
E
E
F
H
H
L
p
Q
q
U
U
w
w
w
3
UNIT
1
1
1
1
2
1
2
11.81
11.56
3.30 2.26
3.05 2.01
4.7
4.2
31.55 31.52
30.94 30.96
9.50 9.53 1.75 17.12 25.53 3.48
9.30 9.27 1.50 16.10 25.27 2.97
41.28 10.29
41.02 10.03
0.18
0.10
35.56
1.400
0.25 0.51 0.25
0.010 0.020 0.010
mm
13.72
0.465
0.455
0.130 0.089
0.120 0.079
0.185
0.165
1.242 1.241
1.218 1.219
0.374 0.375 0.069 0.674 1.005 0.137
0.366 0.365 0.059 0.634 0.995 0.117
1.625 0.405
1.615 0.395
0.007
0.004
inches
Note
0.540
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
10-02-02
12-05-02
SOT539A
Fig 13. Package outline SOT539A
BLF888B_BLF888BS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
12 of 17
BLF888B; BLF888BS
UHF power LDMOS transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D
D
1
U
H
1
1
c
w
D
2
1
2
E
U
E
H
1
2
L
3
4
b
w
Q
3
e
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
E
E
e
F
H
H
1
L
Q
U
U
w
w
3
1
1
1
2
2
max 4.7 11.81 0.18 31.55 31.52 9.5
mm nom
min 4.2 11.56 0.10 30.94 30.96 9.3
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
inches nom
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
9.53
1.75 17.12 25.53 3.48 2.26 32.39 10.29
13.72
0.54
0.25 0.25
0.01 0.01
9.27
1.50 16.10 25.27 2.97 2.01 32.13 10.03
0.069 0.674 1.005 0.137 0.089 1.275 0.405
0.059 0.634 0.995 0.117 0.079 1.265 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
sot539b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
12-05-02
13-05-24
SOT539B
Fig 14. Package outline SOT539B
BLF888B_BLF888BS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
13 of 17
BLF888B; BLF888BS
UHF power LDMOS transistor
10. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
11. Abbreviations
Table 10. Abbreviations
Acronym
CCDF
DVB
Description
Complementary Cumulative Distribution Function
Digital Video Broadcast
DVB-T
LDMOS
LDMOST
OFDM
PAR
Digital Video Broadcast - Terrestrial
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Peak-to-Average power Ratio
Radio Frequency
RF
SMD
Surface Mounted Device
TTF
Time-To-Failure
UHF
Ultra High Frequency
VSWR
Voltage Standing-Wave Ratio
12. Revision history
Table 11. Revision history
Document ID
Release date
Data sheet status
Change notice Supersedes
- BLF888B_BLF888BS v.2
BLF888B_BLF888BS#3
Modifications:
20150901
Product data sheet
• The format of this document has been redesigned to comply with the new identity
guidelines of Ampleon.
• Legal texts have been adapted to the new company name where appropriate.
BLF888B_BLF888BS v.2
BLF888B_BLF888BS v.1
20130712
Product data sheet
-
BLF888B_BLF888BS v.1
20111017
Product data sheet
-
-
BLF888B_BLF888BS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
14 of 17
BLF888B; BLF888BS
UHF power LDMOS transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
Ampleon product can reasonably be expected to result in personal injury,
13.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF888B_BLF888BS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
15 of 17
BLF888B; BLF888BS
UHF power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
13.4 Licenses
ICs with DVB-T or DVB-T2 functionality
Use of this product in any manner that complies with the DVB-T or the
DVB-T2 standard may require licenses under applicable patents of the
DVB-T respectively the DVB-T2 patent portfolio, which license is available
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under
applicable patents of other parties.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
13.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
14. Contact information
For more information, please visit:
http://www.ampleon.com
For sales office addresses, please visit:
http://www.ampleon.com/sales
BLF888B_BLF888BS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
16 of 17
BLF888B; BLF888BS
UHF power LDMOS transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
7.1
7.1.1
7.1.2
7.2
7.2.1
7.3
Application information. . . . . . . . . . . . . . . . . . . 5
Narrowband RF figures . . . . . . . . . . . . . . . . . . 5
2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Broadband RF figures . . . . . . . . . . . . . . . . . . . 6
DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Impedance information . . . . . . . . . . . . . . . . . . . 7
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
7.4
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Handling information. . . . . . . . . . . . . . . . . . . . 14
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
13.1
13.2
13.3
13.4
13.5
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF888B_BLF888BS#3
相关型号：
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